CN103441746A - Integrated packaging structure of surface acoustic wave filter and packaging method thereof - Google Patents
Integrated packaging structure of surface acoustic wave filter and packaging method thereof Download PDFInfo
- Publication number
- CN103441746A CN103441746A CN2013103910428A CN201310391042A CN103441746A CN 103441746 A CN103441746 A CN 103441746A CN 2013103910428 A CN2013103910428 A CN 2013103910428A CN 201310391042 A CN201310391042 A CN 201310391042A CN 103441746 A CN103441746 A CN 103441746A
- Authority
- CN
- China
- Prior art keywords
- surface acoustic
- wave filter
- acoustic wave
- bonding
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses an integrated packaging structure of a surface acoustic wave filter and a packaging method thereof and belongs to the technical field of surface acoustic waves. The integrated packaging structure comprises a surface acoustic wave filter chip, a matching tuned circuit and a packaging shell. The packaging shell is composed of a packaging base, outer pins of the packaging base, and a sealing cap. The sealing cap covers the packaging base. The integrated packaging structure is characterized in that a tuned substrate is arranged, the matching tuned circuit is manufactured on the tuned substrate, the surface acoustic wave filter chip is adhered to the tuned substrate and is electrically connected with the matching tuned circuit through a bonding wire, and the tuned substrate is adhered to the packaging base and is electrically connected with the outer pins of the packaging base through bonding wires. According to the integrated packaging structure, the surface acoustic wave filter chip and the matching tuned circuit are integrated and packaged in the same packaging body, so that mutual connection structures between the surface acoustic wave filter chip and an application circuit, and between the matching tuned circuit and an application circuit are simplified. Consequently, the integrated packaging structure has the advantages of being compact in structure, small in consumption, strong in antijamming capability, and the like, and helps to improve the overall performance of an application system of a surface acoustic wave filter.
Description
Technical field
The present invention relates to a kind of electron package structure and method for packing, especially a kind of Surface Acoustic Wave Filter integrated encapsulation structure and method for packing thereof, belong to the surface acoustic wave techniques field.
Background technology
Surface Acoustic Wave Filter is in access during application circuit, usually need to its with front late-class circuit between tuning circuit is set, to realize the coupling of electrical parameter between device and its front late-class circuit, thereby bring into play the optimum performance of Surface Acoustic Wave Filter.Surface Acoustic Wave Filter of the prior art generally adopts the individual packages method, be that each filter chip is placed in separately a package casing, and the coupling tuning circuit is arranged on outside device package, the weak point of bringing thus is that the interconnecting construction between Surface Acoustic Wave Filter and outer coupling tuning circuit is comparatively complicated, loss is larger, poor anti jamming capability, and then the overall performance of Surface Acoustic Wave Filter application system is produced to the significant adverse impact.
Summary of the invention
The objective of the invention is for above-mentioned the deficiencies in the prior art, overcoming in prior art Surface Acoustic Wave Filter chip and coupling tuning circuit is placed in inside and outside packaging body, the interconnecting construction complexity, loss is large, poor anti jamming capability, and then the overall performance of Surface Acoustic Wave Filter application system is produced to the shortcoming of significant adverse impact, thereby provide a kind of Surface Acoustic Wave Filter integrated encapsulation structure and method for packing thereof.
The objective of the invention is to be achieved through the following technical solutions: the Surface Acoustic Wave Filter integrated encapsulation structure, comprise the Surface Acoustic Wave Filter chip, with coupling tuning circuit and the package casing of Surface Acoustic Wave Filter chip electrical connection, package casing consists of outer pin, the sealing cap of encapsulation base plate, encapsulation base plate, sealing cap covers on encapsulation base plate, it is characterized in that, be provided with tuning substrate, tuning substrate is arranged in described package casing, and described coupling tuning circuit is produced on tuning substrate; Described Surface Acoustic Wave Filter die bonding is on tuning substrate, and by bonding wire and coupling tuning circuit electrical connection; Described tuning substrate bonding is on encapsulation base plate, and by the outer pin electrical connection of bonding wire and encapsulation base plate.
Described tuning substrate is the high frequency two sided pcb, and its positive central region is the die bonding district, and its positive neighboring area arranges the coupling tuning circuit, and its back side is provided with large tracts of land grounded metal film; Described Surface Acoustic Wave Filter die bonding is in the die bonding district, the ground electrode of the ground electrode in described die bonding district and coupling tuning circuit is respectively by the via hole on tuning substrate and the electrical connection of grounded metal film, and the grounded metal film is by conductive silver glue and encapsulation base plate electrical connection.
Described bonding wire comprises signal bonding wire, ground connection bonding wire, and the signal bonding wire connects the signal electrode of Surface Acoustic Wave Filter chip and signal electrode and the signal electrode of coupling tuning circuit and the outer pin of encapsulation base plate of coupling tuning circuit successively; Described ground connection bonding wire connects the ground electrode of Surface Acoustic Wave Filter chip and the ground electrode in die bonding district.
The Surface Acoustic Wave Filter integrated encapsulation method, is characterized in that, comprises the following steps:
(1) make Surface Acoustic Wave Filter chip and tuning substrate, described tuning substrate is the high frequency two sided pcb, and its positive central region is the die bonding district, and its positive neighboring area arranges the coupling tuning circuit, and its back side is provided with large tracts of land grounded metal film;
(2) with bonding die red glue by the Surface Acoustic Wave Filter die bonding die bonding district at tuning substrate;
(3) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with the signal bonding wire, connect the signal electrode of Surface Acoustic Wave Filter chip and the signal electrode of coupling tuning circuit; Connect the ground electrode of Surface Acoustic Wave Filter chip and the ground electrode in die bonding district with the ground connection bonding wire; The ground electrode of the ground electrode in described die bonding district and coupling tuning circuit is respectively by the via hole on tuning substrate and the electrical connection of grounded metal film;
(4) with conductive silver glue by tuning substrate bonding on encapsulation base plate, and make grounded metal film on tuning substrate and encapsulation base plate electrical connection;
(5) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with the signal electrode of signal bonding wire matching connection tuning circuit and the outer pin of encapsulation base plate;
(6) adopt capacitance energy storage welding method that sealing cap is covered on encapsulation base plate, finally complete the Surface Acoustic Wave Filter integration packaging.
The present invention is by the Surface Acoustic Wave Filter chip and mate the tuning circuit integration packaging in same packaging body, simplified the interconnection structure between Surface Acoustic Wave Filter chip, coupling tuning circuit and application circuit, there is compact conformation, loss is little, the advantages such as antijamming capability is strong, contribute to improve the overall performance of Surface Acoustic Wave Filter application system, the processing technology compatibility of the manufacture method of related integrated encapsulation structure and conventional Surface Acoustic Wave Filter and application circuit thereof, be easy to synchronous realization.
The accompanying drawing explanation
Fig. 1 is general structure schematic diagram of the present invention;
Fig. 2 is the structural representation of tuning substrate in Fig. 1;
Fig. 3 is that the present invention is for encapsulating the structural representation of monophone surface wave filter chip;
Fig. 4 is that the present invention is for encapsulating the structural representation of the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet;
In figure: 1 Surface Acoustic Wave Filter chip, 11 monophone surface wave filter chips, the integrated Surface Acoustic Wave Filter core assembly of 12 monolithic sheet, 101 chip signal electrodes, 102 chip ground electrodes, 2 tuning substrates, 21 die bonding districts, 22 coupling tuning circuits, 23 via holes, 24 grounded metal films, 201 coupling tuning circuit signal electrodes, 202 coupling tuning circuit ground electrodes, 203 die bonding district ground electrodes, 3 bonding wires, 31 signal bonding wires, 32 ground connection bonding wires, 4 encapsulation base plates, the outer pin of 41 encapsulation base plates, 5 sealing caps.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described:
The Surface Acoustic Wave Filter integrated encapsulation structure, comprise Surface Acoustic Wave Filter chip 1, with coupling tuning circuit 22 and the package casing of Surface Acoustic Wave Filter chip electrical connection, package casing consists of outer pin 41, the sealing cap 5 of encapsulation base plate 4, encapsulation base plate, and sealing cap covers on encapsulation base plate.
Be provided with tuning substrate 2, tuning substrate is arranged in described package casing, and tuning substrate is the high frequency two sided pcb, and its positive central region is die bonding district 21, its positive neighboring area arranges coupling tuning circuit 22, and its back side is provided with large tracts of land grounded metal film 24.
The ground connection bonding wire connects the ground electrode 102 of Surface Acoustic Wave Filter chip and the ground electrode 203 in die bonding district.The ground electrode 202 of the ground electrode 203 in die bonding district and coupling tuning circuit is respectively by the via hole 23 on tuning substrate and 24 electrical connections of grounded metal film, and the grounded metal film is by conductive silver glue and encapsulation base plate 4 electrical connections.
The Surface Acoustic Wave Filter integrated encapsulation method comprises the following steps:
(1) make Surface Acoustic Wave Filter chip 1 and tuning substrate 2, described tuning substrate is the high frequency two sided pcb, its positive central region is die bonding district 21, and its positive neighboring area arranges coupling tuning circuit 22, and its back side is provided with large tracts of land grounded metal film 24;
(2) with bonding die red glue by the Surface Acoustic Wave Filter die bonding die bonding district at tuning substrate;
(3) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with signal bonding wire 31, connect the signal electrode 101 of Surface Acoustic Wave Filter chip and the signal electrode 201 of coupling tuning circuit; Connect the ground electrode 102 of Surface Acoustic Wave Filter chip and the ground electrode 203 in die bonding district with ground connection bonding wire 32; The ground electrode of the ground electrode in described die bonding district and coupling tuning circuit is respectively by the via hole 23 on tuning substrate and 24 electrical connections of grounded metal film;
(4) with conductive silver glue by tuning substrate bonding on encapsulation base plate, and make grounded metal film on tuning substrate 24 and encapsulation base plate 4 electrical connections;
(5) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with the signal electrode 201 of signal bonding wire matching connection tuning circuit and the outer pin 41 of encapsulation base plate;
(6) adopt capacitance energy storage welding method that sealing cap 5 is covered on encapsulation base plate 4, finally complete the Surface Acoustic Wave Filter integration packaging.
The integration packaging that the present embodiment is monophone surface wave filter chip and single channel filter match tuning circuit.
The Surface Acoustic Wave Filter integrated encapsulation structure, comprise monophone surface wave filter chip 11, with single channel filter match tuning circuit 22 and the package casing of monophone surface wave filter chip electrical connection.Package casing consists of outer pin 41, the sealing cap 5 of encapsulation base plate 4, encapsulation base plate, and sealing cap covers on encapsulation base plate.
Be provided with tuning substrate 2, its positive central region is die bonding district 21, its positive neighboring area arranges single channel filter match tuning circuit 22, its back side is provided with large tracts of land grounded metal film 24, tuning substrate 2 is arranged in package casing, and single channel filter match tuning circuit 22 is arranged on tuning substrate.
Monophone surface wave filter chip 11 is bonded in tuning substrate 2 die bonding districts, middle part 21, and tuning substrate 2 is bonded on encapsulation base 4, coated with sealing cap 5.
As shown in Figure 2 and Figure 3, bonding wire 31 connects the outer pin 41 of chip signal electrode 101 and coupling tuning circuit signal electrode 201 and coupling tuning circuit signal electrode 201 and encapsulation base plate 4 successively, and bonding wire 32 connects chip ground electrode 102 and die bonding district ground electrode 203; Die bonding district ground electrode 203 is connected with tuning substrate back grounded metal film 24 by via hole 23 with coupling tuning circuit ground electrode 202, and tuning substrate back grounded metal film 24 is by conductive silver glue and encapsulation base plate 4 electrical connections.
In the present embodiment, the Surface Acoustic Wave Filter chip is for being produced on 128 ° of on-chip 144.45MHz Surface Acoustic Wave Filter of Y-X lithium niobate piezoelectric monocrystal, the high frequency FR4 epoxy glass fiber substrate that the material of tuning substrate is double-side copper-applying, die adhesive is the red glue of BS-6600K type bonding die, the substrate bonding agent is A6/HA6 type conductive silver glue, and encapsulation base and sealing cap are the full copper encapsulation of the SF-4 external member with 4 outer pins.
The implementation step of the present embodiment is:
(1) make monophone surface wave filter chip 11 and single channel filter tuner substrate 2; Tuning substrate is the high frequency two sided pcb, and its positive central region is die bonding district 21, and its positive neighboring area arranges coupling tuning circuit 22, and its back side is provided with large tracts of land grounded metal film 24;
(2) with the red glue of bonding die, monophone surface wave filter chip 11 is bonded on tuning substrate 2;
(3) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with signal bonding wire 31, connect the signal electrode 101 of Surface Acoustic Wave Filter chip and the signal electrode 201 of coupling tuning circuit; Connect the ground electrode 102 of Surface Acoustic Wave Filter chip and the ground electrode 203 in die bonding district with ground connection bonding wire 32; The ground electrode of the ground electrode in die bonding district and coupling tuning circuit is respectively by the via hole 23 on tuning substrate and 24 electrical connections of grounded metal film;
(4) with conductive silver glue, tuning substrate 2 is bonded on encapsulation base plate 4, and makes the grounded metal film 24 and encapsulation base plate 4 electrical connections on tuning substrate;
(5) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with the signal electrode 201 of signal bonding wire matching connection tuning circuit and the outer pin 41 of encapsulation base plate;
(6) adopt capacitance energy storage welding method that sealing cap 5 is covered on encapsulation base plate 4, finally complete the Surface Acoustic Wave Filter integration packaging.
The integration packaging that the present embodiment is monolithic integrated Surface Acoustic Wave Filter core assembly sheet and multi-channel filter coupling tuning circuit.
The Surface Acoustic Wave Filter integrated encapsulation structure, comprise the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet 12, with the multi-channel filter of Surface Acoustic Wave Filter chip electrical connection, mate tuning circuit 22 and package casing.Package casing consists of outer pin 41, the sealing cap 5 of encapsulation base plate 4, encapsulation base plate, and sealing cap covers on encapsulation base plate.
Be provided with tuning substrate 2, its positive central region is die bonding district 21, its positive neighboring area arranges multi-channel filter coupling tuning circuit 22, its back side is provided with large tracts of land grounded metal film 24, tuning substrate 2 is arranged in package casing, and multi-channel filter coupling tuning circuit 22 is arranged on tuning substrate.
As shown in Figure 1, the integrated Surface Acoustic Wave Filter core assembly of monolithic sheet 12 is bonded in tuning substrate 2 die bonding districts, middle part 21, and tuning substrate 2 is bonded on encapsulation base 4, finally coated with sealing cap 5.
As Fig. 2, shown in Fig. 4, bonding wire 31 connects signal electrode 101 and corresponding tuning circuit signal electrode 201 and each channel matched tuning circuit electrode 201 and corresponding each outer pin 41 of encapsulation base plate of respectively mating of each filter on chip successively, bonding wire 32 connect on chips each filter ground electrode 102 and and die bonding district ground electrode 203, die bonding district ground electrode 203 is connected with tuning substrate back grounded metal film 24 by via hole 23 with each coupling tuning circuit ground electrode 202, tuning substrate back grounded metal film 24 is by conductive silver glue and encapsulation base plate 4 electrical connections.
In the present embodiment, the Surface Acoustic Wave Filter chip is the integrated 4 channel Surface Acoustic Wave Filter groups of monolithic that are produced on ST quartz piezoelectric monocrystal chip, its centre frequency is respectively 201.00MHz, 201.25MHz, 201.50MHz and 201.75MHz, the high frequency FR4 epoxy glass fiber substrate that the material of tuning substrate is double-side copper-applying, die adhesive is the red glue of BS-6600K type bonding die, the substrate bonding agent is A6/HA6 type conductive silver glue, and encapsulation base and sealing cap are the full copper encapsulation of the SF-10 external member with 10 outer pins.
The implementation step of the present embodiment is:
(1) make Surface Acoustic Wave Filter core assembly sheet 12 and the tuning substrate 2 of multi-channel filter; Tuning substrate is the high frequency two sided pcb, and its positive central region is die bonding district 21, and its positive neighboring area arranges coupling tuning circuit 22, and its back side is provided with large tracts of land grounded metal film 24;
(2) with the red glue of bonding die, Surface Acoustic Wave Filter core assembly sheet 12 is bonded on tuning substrate 2;
(3) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with signal bonding wire 31, connect the signal electrode 101 of Surface Acoustic Wave Filter chip and the signal electrode 201 of coupling tuning circuit; Connect the ground electrode 102 of Surface Acoustic Wave Filter chip and the ground electrode 203 in die bonding district with ground connection bonding wire 32; The ground electrode of the ground electrode in described die bonding district and coupling tuning circuit is respectively by the via hole 23 on tuning substrate and 24 electrical connections of grounded metal film;
(4) with conductive silver glue, tuning substrate 2 is bonded on encapsulation base plate 4, and makes the grounded metal film 24 and encapsulation base plate 4 electrical connections on tuning substrate;
(5) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with the signal electrode 201 of signal bonding wire matching connection tuning circuit and the outer pin 41 of encapsulation base plate;
(6) adopt capacitance energy storage welding method that sealing cap 5 is covered on encapsulation base plate 4, finally complete the Surface Acoustic Wave Filter integration packaging.
Claims (4)
1. a Surface Acoustic Wave Filter integrated encapsulation structure, comprise Surface Acoustic Wave Filter chip (1), with coupling tuning circuit (22) and the package casing of Surface Acoustic Wave Filter chip electrical connection, package casing consists of outer pin (41), the sealing cap (5) of encapsulation base plate (4), encapsulation base plate, sealing cap covers on encapsulation base plate, it is characterized in that, be provided with tuning substrate (2), tuning substrate (2) is arranged in described package casing, and described coupling tuning circuit (22) is produced on tuning substrate; Described Surface Acoustic Wave Filter die bonding is on tuning substrate, and by bonding wire (3) and coupling tuning circuit electrical connection; Described tuning substrate bonding is on encapsulation base plate, and by the outer pin electrical connection of bonding wire and encapsulation base plate.
2. Surface Acoustic Wave Filter integrated encapsulation structure according to claim 1, it is characterized in that, described tuning substrate is the high frequency two sided pcb, its positive central region is die bonding district (21), its positive neighboring area arranges coupling tuning circuit (22), and its back side is provided with large tracts of land grounded metal film (24); Described Surface Acoustic Wave Filter die bonding is in the die bonding district, the ground electrode (202) of the ground electrode (203) in described die bonding district and coupling tuning circuit is respectively by the via hole (23) on tuning substrate and grounded metal film (24) electrical connection, and the grounded metal film is by conductive silver glue and encapsulation base plate (4) electrical connection.
3. Surface Acoustic Wave Filter integrated encapsulation structure according to claim 1 and 2, it is characterized in that, described bonding wire comprises signal bonding wire (31), ground connection bonding wire (32), and the signal bonding wire connects the signal electrode (101) of Surface Acoustic Wave Filter chip and signal electrode (201) and the signal electrode (201) of coupling tuning circuit and the outer pin (41) of encapsulation base plate of coupling tuning circuit successively; Described ground connection bonding wire connects the ground electrode (102) of Surface Acoustic Wave Filter chip and the ground electrode (203) in die bonding district.
4. a Surface Acoustic Wave Filter integrated encapsulation method, is characterized in that, comprises the following steps:
(1) make Surface Acoustic Wave Filter chip (1) and tuning substrate (2), described tuning substrate is the high frequency two sided pcb, its positive central region is die bonding district (21), its positive neighboring area arranges coupling tuning circuit (22), and its back side is provided with large tracts of land grounded metal film (24);
(2) with bonding die red glue by the Surface Acoustic Wave Filter die bonding die bonding district at tuning substrate;
(3) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with signal bonding wire (31), connect the signal electrode (101) of Surface Acoustic Wave Filter chip and the signal electrode (201) of coupling tuning circuit; Connect the ground electrode (102) of Surface Acoustic Wave Filter chip and the ground electrode (203) in die bonding district with ground connection bonding wire (32); The ground electrode of the ground electrode in described die bonding district and coupling tuning circuit is respectively by the via hole (23) on tuning substrate and grounded metal film (24) electrical connection;
(4) with conductive silver glue by tuning substrate bonding on encapsulation base plate, and make grounded metal film (24) on tuning substrate and encapsulation base plate (4) electrical connection;
(5) adopt ultrasonic bonding method aluminium silicon bonding wire lead-in wire, with the signal electrode (201) of signal bonding wire matching connection tuning circuit and the outer pin (41) of encapsulation base plate;
(6) adopt capacitance energy storage welding method that sealing cap (5) is covered to encapsulation base plate (4) upper, finally complete the Surface Acoustic Wave Filter integration packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310391042.8A CN103441746B (en) | 2013-09-02 | 2013-09-02 | SAW filter integrated encapsulation structure and its method for packing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310391042.8A CN103441746B (en) | 2013-09-02 | 2013-09-02 | SAW filter integrated encapsulation structure and its method for packing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103441746A true CN103441746A (en) | 2013-12-11 |
| CN103441746B CN103441746B (en) | 2017-03-15 |
Family
ID=49695425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310391042.8A Expired - Fee Related CN103441746B (en) | 2013-09-02 | 2013-09-02 | SAW filter integrated encapsulation structure and its method for packing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103441746B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105897215A (en) * | 2016-05-20 | 2016-08-24 | 爱普科斯科技（无锡）有限公司 | Packaging structure with bulk acoustic wave filter chip |
| CN107707216A (en) * | 2017-10-19 | 2018-02-16 | 成都旭思特科技有限公司 | Strengthen the wave filter integrating filtering method of antijamming capability |
| CN109060233A (en) * | 2018-07-27 | 2018-12-21 | 中国科学院声学研究所 | A kind of packaging system of surface acoustic wave sensor |
| CN114094978A (en) * | 2022-01-19 | 2022-02-25 | 深圳新声半导体有限公司 | Decoupling packaging structure of surface acoustic wave filter bank |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1368831A (en) * | 2001-02-09 | 2002-09-11 | 富士通株式会社 | Duplexer device |
| JP2003163570A (en) * | 2001-11-26 | 2003-06-06 | Fujitsu Media Device Kk | Branching filter and electronic equipment using the same |
| CN1551500A (en) * | 2003-04-30 | 2004-12-01 | 富士通媒体部品株式会社 | Duplexer using surface acoustic wave filters and electronic device equipped with the same |
| CN203482165U (en) * | 2013-09-02 | 2014-03-12 | 扬州大学 | Integrated packaging structure of surface acoustic wave filter |
-
2013
- 2013-09-02 CN CN201310391042.8A patent/CN103441746B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1368831A (en) * | 2001-02-09 | 2002-09-11 | 富士通株式会社 | Duplexer device |
| JP2003163570A (en) * | 2001-11-26 | 2003-06-06 | Fujitsu Media Device Kk | Branching filter and electronic equipment using the same |
| CN1551500A (en) * | 2003-04-30 | 2004-12-01 | 富士通媒体部品株式会社 | Duplexer using surface acoustic wave filters and electronic device equipped with the same |
| CN203482165U (en) * | 2013-09-02 | 2014-03-12 | 扬州大学 | Integrated packaging structure of surface acoustic wave filter |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105897215A (en) * | 2016-05-20 | 2016-08-24 | 爱普科斯科技（无锡）有限公司 | Packaging structure with bulk acoustic wave filter chip |
| CN105897215B (en) * | 2016-05-20 | 2018-08-28 | 全讯射频科技(无锡)有限公司 | A kind of encapsulating structure of bulk accoustic wave filter chip |
| CN107707216A (en) * | 2017-10-19 | 2018-02-16 | 成都旭思特科技有限公司 | Strengthen the wave filter integrating filtering method of antijamming capability |
| CN109060233A (en) * | 2018-07-27 | 2018-12-21 | 中国科学院声学研究所 | A kind of packaging system of surface acoustic wave sensor |
| CN114094978A (en) * | 2022-01-19 | 2022-02-25 | 深圳新声半导体有限公司 | Decoupling packaging structure of surface acoustic wave filter bank |
| CN114094978B (en) * | 2022-01-19 | 2022-04-15 | 深圳新声半导体有限公司 | Decoupling packaging structure of surface acoustic wave filter bank |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103441746B (en) | 2017-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101282594B (en) | Encapsulation structure for Micro-electromechanical microphone with two-sided mounting-pasted electrode | |
| CN105897218B (en) | Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method | |
| CN203482165U (en) | Integrated packaging structure of surface acoustic wave filter | |
| CN101018044A (en) | Filter module providing function related to multi band and method thereof | |
| US20050073040A1 (en) | Wafer level package for micro device and manufacturing method thereof | |
| CN103441746A (en) | Integrated packaging structure of surface acoustic wave filter and packaging method thereof | |
| CN104868872A (en) | Surface acoustic wave filter packaging structure | |
| CN202772854U (en) | Chip-scale packaged surface acoustic wave device | |
| CN203788459U (en) | Mems microphone | |
| CN112117982B (en) | Packaging structure and manufacturing method thereof | |
| CN205945672U (en) | Chip interconnection packaging structure of integrated surface acoustic wave filter subassembly | |
| CN206195735U (en) | Encapsulation structure of sound surface wave filter | |
| CN201226592Y (en) | Silicon microphone packaged by flexible circuit board | |
| JP2001094390A (en) | Surface acoustic wave device and its manufacturing method | |
| CN107758604A (en) | The fan-out package structure and method of MEMS hydrophone chips | |
| CN105742255B (en) | Round metal chip level groove buried via hole type surface sound filtering chip encapsulating structure and method | |
| CN203845811U (en) | Multifunctional sensor | |
| CN101155437B (en) | Back-placed microphone module group structure, microphone chip component and manufacturing method thereof | |
| CN105742195A (en) | Manufacturing method for etching buried hole-type surface sound filter chip packaging structure | |
| CN105810597B (en) | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure | |
| CN102387456A (en) | Midget microphone and manufacturing method thereof | |
| KR101953089B1 (en) | Lead frame-based chip carrier used in the fabrication of mems transducer packages | |
| CN203788460U (en) | Mems microphone | |
| CN103663352A (en) | MEMS microphone packaging structure and packaging method | |
| CN210273992U (en) | Whole wafer level packaging structure of miniature electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170315 Termination date: 20190902 |