CN203367355U - Composite substrate packed LED based on AlSiC - Google Patents
Composite substrate packed LED based on AlSiC Download PDFInfo
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- CN203367355U CN203367355U CN2013204263473U CN201320426347U CN203367355U CN 203367355 U CN203367355 U CN 203367355U CN 2013204263473 U CN2013204263473 U CN 2013204263473U CN 201320426347 U CN201320426347 U CN 201320426347U CN 203367355 U CN203367355 U CN 203367355U
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- led chip
- alsic
- led
- insulating barrier
- alsic composite
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The utility model discloses a composite substrate packed LED based on AlSiC. The composite substrate packed LED comprises an AlSiC composite heat radiation substrate coated with an AlN insulating layer, two copper film electrodes, an LED chip and gold threads, wherein the LED chip is packaged in the AlSiC composite heat radiation substrate coated with the AlN insulating layer, and the two copper film electrodes are plated on the AlN insulating layer and respectively connected with the anode and the cathode of the LED chip. The composite substrate packed LED based on AlSiC is simple in structure, excellent in heat radiation performance and long in service lifetime.
Description
Technical field
The utility model relates to the LED encapsulated on a kind of plate, particularly a kind of LED based on the encapsulation of AlSiC composite base plate.
Background technology
Along with the develop rapidly of LED, the power of LED is increasing, and produces unnecessary heat energy when work, has directly affected the normal operation of LED.If can not derive heat by effective way, will affect the operating efficiency of LED, finally make LED lose efficacy.Therefore, people propose more and more harsher requirement to encapsulating material.
Traditional encapsulating material comprises silicon substrate, metal substrate and ceramic substrate etc.Silicon and ceramic substrate processing difficulties, cost is high, and thermal conductivity is low; The thermal coefficient of expansion of metal material and LED chip backing material do not mate, the LED duty cycle repeatedly after, easily produce thermal stress, cause between chip and substrate and produce minute crack, increase thermal resistance, finally cause coming off.Therefore, these traditional encapsulating materials are difficult to meet the harsh demand of base plate for packaging.
The heat-radiating substrate material of new research and development has metal-core printed circuit board (MCPCB), covers copper ceramic wafer (DBC) and Metal Substrate low-temperature sintered ceramics substrate (LTCC-M) both at home and abroad.Wherein, the metal-core printed circuit board thermal conductivity is subject to the restriction of insulating barrier, and thermal conductivity is low, and can not realize encapsulating on plate; Cover the copper ceramic wafer adopt the Direct Bonding mode by pottery together with metal bonding, improved thermal conductivity, make thermal coefficient of expansion be controlled at a suitable scope simultaneously, but metal and ceramic respond are low, and wetability is bad, makes the bonding difficulty high, interface bond strength is low, easily comes off; Metal Substrate low-temperature sintered ceramics substrate is high to the compact dimensions required precision, and there is bad, the caducous difficult problem of metal and ceramic wetability too in complex process.
The utility model content
For the above-mentioned shortcoming and deficiency that overcome prior art, the purpose of this utility model is to provide a kind of LED based on the encapsulation of AlSiC composite base plate, simple in structure, perfect heat-dissipating, long service life.
The purpose of this utility model is achieved through the following technical solutions:
A kind of LED based on the encapsulation of AlSiC composite base plate, comprise the AlSiC composite radiating substrate that is coated with the AlN insulating barrier, two copper film electrodes, LED chip and gold threads, and described LED chip is encapsulated on the AlSiC composite radiating substrate of the described AlN of being coated with insulating barrier; Two copper film electrodes are plated on the AlN insulating barrier, by gold thread, with the positive and negative electrode of LED chip, are connected respectively.
The thickness of described AlN insulating barrier is 2.5 μ m-3 μ m.
The LED chip that described LED chip is individual particle encapsulation or be the integrated light source module of many particles LED chip.
Described LED chip adopts the COB packaging technology to be encapsulated on the AlSiC composite radiating substrate of the described AlN of being coated with insulating barrier.
Described AlN insulating barrier is for adopting the AlN insulating barrier of magnetically controlled sputter method at the plated surface of AlSiC composite radiating substrate.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) the utility model adopts AlSiC composite radiating substrate, the AlSiC composite material is because the prices of raw and semifnished materials are cheap, energy near-net-shape complicated shape, and have that thermal conductivity is high, the coefficient of expansion is adjustable, specific stiffness is large, density is little, make encapsulating structure have that power density is high, the chip life-span is long, reliability is high and the characteristics such as quality is light, in the Electronic Packaging field, shown good application prospect.By regulating the thermal coefficient of expansion of AlSiC composite material, itself and LED chip material are complementary; Heat dissipation problem while adopting AlSiC composite radiating substrate not only effectively to solve LED chip work, heat-radiating substrate and the unmatched problem of chip material thermal expansion have been solved simultaneously, make the LED chip difficult drop-off encapsulated on plate, improve the useful life of LED, be applicable to the manufacture of low cost high power LED.
(2) the utility model is by plating the AllN insulating barrier at AlSiC composite radiating substrate, can prevent the short circuit phenomenon that copper film electrode on substrate and AlSiC composite material produce because of conducting.AlN is the material of high-termal conductivity and high-insulativity, plates the AlN insulating barrier and not only can play good insulation effect, also can not affect the heat-conducting effect of substrate simultaneously.
The accompanying drawing explanation
The LED schematic diagram based on the encapsulation of AlSiC composite base plate that Fig. 1 is embodiment 1 of the present utility model.
The LED schematic diagram based on the encapsulation of AlSiC composite base plate that Fig. 2 is embodiment 2 of the present utility model.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Embodiment 1
As described in Figure 1, the LED based on AlSiC composite base plate encapsulation of the present embodiment, comprise the AlSiC composite radiating substrate 1 that is coated with AlN insulating barrier 2, two copper film electrodes 3, LED chip 41, gold thread 5.
The encapsulation of described LED chip adopts COB(chip on board, is called for short COB) packaging technology is encapsulated on the AlSiC composite radiating substrate of the described AlN of being coated with insulating barrier; Two copper film electrodes are plated on the AlN insulating barrier, by gold thread, with the positive and negative electrode of LED chip, are connected respectively.The thickness of the AlN insulating barrier of the present embodiment is 2.5 μ m, the LED chip that LED chip is the individual particle encapsulation.
The preparation method of the LED based on the encapsulation of AlSiC composite base plate of the present embodiment is as follows:
(1) will be polished to minute surface without the AlSiC composite base plate of polished and cleaned, after polishing, use respectively the described AlSiC composite base plate of acetone and soaked in absolute ethyl alcohol, and put it in ultrasonic washing instrument and to clean 15 minutes, to remove the foreign material such as grease that adhere on substrate.
(2) the AlN insulating barrier that the method sputter thickness by magnetron sputtering is 2.5 μ m on the AlSiC composite base plate.The concrete technology parameter is known by the art personnel or is determined according to prior art.
(3) plate copper film on the AlN insulating barrier, and adopt wet-etching technology to erode away two predetermined copper film electrodes.
(4) between copper film according to traditional plate on method for packing, LED chip is encapsulated in to described AlSiC composite base plate.
(5) by gold thread, two copper film electrodes are connected with the positive and negative electrode of LED chip, draw both positive and negative polarity.
The LED based on the encapsulation of AlSiC composite base plate of the present embodiment as shown in Figure 2.
Outside the present embodiment following characteristics, all the other features and embodiment 1 are same: the thickness of AlN insulating barrier 2 is 3 μ m, the light source module 42 that LED chip is many particles integrated chip.
Above-described embodiment is preferably execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection range of the present utility model.
Claims (3)
1. the LED based on AlSiC composite base plate encapsulation, it is characterized in that, comprise the AlSiC composite radiating substrate that is coated with the AlN insulating barrier, two copper film electrodes, LED chip and gold threads, described LED chip is encapsulated on the AlSiC composite radiating substrate of the described AlN of being coated with insulating barrier; Two copper film electrodes are plated on the AlN insulating barrier, by gold thread, with the positive and negative electrode of LED chip, are connected respectively.
2. the LED based on the encapsulation of AlSiC composite base plate according to claim 1, is characterized in that, the thickness of described AlN insulating barrier is 2.5 μ m-3 μ m.
3. the LED based on AlSiC composite base plate encapsulation according to claim 1, is characterized in that, the LED chip that described LED chip is the individual particle encapsulation or be the integrated light source module of many particles LED chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013204263473U CN203367355U (en) | 2013-07-16 | 2013-07-16 | Composite substrate packed LED based on AlSiC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013204263473U CN203367355U (en) | 2013-07-16 | 2013-07-16 | Composite substrate packed LED based on AlSiC |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203367355U true CN203367355U (en) | 2013-12-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013204263473U Expired - Lifetime CN203367355U (en) | 2013-07-16 | 2013-07-16 | Composite substrate packed LED based on AlSiC |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203367355U (en) |
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2013
- 2013-07-16 CN CN2013204263473U patent/CN203367355U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131225 |