CN203118937U - 便于定位的半导体封装结构 - Google Patents
便于定位的半导体封装结构 Download PDFInfo
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Abstract
本实用新型一种便于定位的半导体封装结构,包括:第一引线条、第二引线条、连接片和二极管芯片,该第一引线条一端是与二极管芯片连接的支撑区;连接片第二焊接端与二极管芯片另一端通过焊锡膏电连接;第一引线条的支撑区与引脚区之间区域设有一第一折弯处,从而使得第一引线条的支撑区低于引脚区;第二引线条的焊接区为一凹槽,此凹槽两侧设有挡块,所述凹槽的深宽比为1∶5~50;连接片的第一焊接端为一第二折弯处,此第二折弯处嵌入所述凹槽内,此第二折弯处与第二焊接端夹角为钝角。本实用新型避免了封装注塑中产生气孔的问题和在炉焊接过程中连接片偏位,提高了产品电性和可靠性,可以用较小尺寸晶粒替代原有大尺寸晶粒,进一步降低制造成本。
Description
技术领域
本发明涉及一种半导体封装结构,尤其涉及一种便于定位的半导体封装结构。
背景技术
整流器是利用二极管的单向导电特性对交流电进行整流,故被广泛应用于交流电转换成直流电的电路中。
现有连接片结构半导体产品通常对连接片无限位或采用简单沟槽结构限位,其缺点为只能对连接片做一个方向的限位,限位的目的在于避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效。当器件设计要求需要对连接片做更高精度限位时,现有结构无法达到要求,限位的目的在于避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效。
其次,在设计开发连接片结构半导体产品时,为了提升大功率器件的导电性能同时保证较薄的产品厚度,通常把连接片设计为平板结构,当平板结构的面积大到一定程度时,产品内部形成大型薄壁结构。成型工艺过程中产品内部容易出现注塑气孔,这些气孔可导致产品电性或可靠性失效因此,如何研发一种便于定位的半导体封装结构,能解决上述问题,便成为本领域技术人员努力的方向。
发明内容
本实用新型目的是提供一种便于定位的半导体封装结构,该半导体封装结构避免了封装注塑中产生气孔的问题和在炉焊接过程中连接片偏位,提高了产品电性和可靠性,可以用较小尺寸晶粒替代原有大尺寸晶粒,进一步降低制造成本。
为达到上述目的,本实用新型采用的技术方案是:一种半导体封装结构,包括:第一引线条、第二引线条、连接片和二极管芯片,该第一引线条一端是与二极管芯片连接的支撑区,所述二极管芯片一端通过焊锡膏与该支撑区电连接,第一引线条另一端是引脚区,该第一引线条的引脚区作为所述整流器的电流传输端;
所述第二引线条一端是与所述连接片的第一焊接端连接的焊接区,该第二引线条另一端为引脚区,该第二引线条的引脚区作为所述整流器的电流传输端;
所述连接片第二焊接端与二极管芯片另一端通过焊锡膏电连接;
所述第一引线条的支撑区与引脚区之间区域设有一第一折弯处,从而使得第一引线条的支撑区低于引脚区;
所述第二引线条的焊接区为一凹槽,此凹槽两侧设有挡块,所述凹槽的深宽比为1:5~50;;
所述连接片的第一焊接端为一第二折弯处,此第二折弯处嵌入所述凹槽内,此第二折弯处与第二焊接端夹角为钝角。
上述技术方案中进一步改进的方案如下:
1. 上述方案中,所述第二折弯处与第二焊接端之间设置有若干个通孔。
2. 上述方案中,所述第二折弯处与第二焊接端夹角为125°~145°。
由于上述技术方案运用,本发明与现有技术相比具有下列优点和效果:
本实用新型便于定位的半导体封装结构,其避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效,大大提高了良率损失;且连接片限位精度的提升使得芯片的性能得以充分发挥,可以用较小尺寸晶粒替代原有大尺寸晶粒,进一步降低制造成本;其次,其第二引线条的焊接区为内表面为弧面的弧形凹槽,此弧形凹槽两侧设有挡块,有利于连接片与第二引线条焊接操作和精度;其次,其第二折弯处与焊接区之间设置有若干个通孔,避免了封装注塑中产生气孔的问题和在炉焊接过程中连接片偏位,从而提高了产品电性和可靠性。
附图说明
附图1为本实用新型便于定位的半导体封装结构示意图;
附图2为附图1中A-A剖面图。
以上附图中:1、第一引线条;2、第二引线条;3、连接片;31、第一焊接端;32、第二焊接端;4、二极管芯片;5、支撑区;61、引脚区;62、引脚区;7、焊接区;8、挡块;9、第一折弯处;10、凹槽;11、第二折弯处;12、通孔。
具体实施方式
下面结合附图及实施例对本发明作进一步描述:
实施例:一种便于定位的半导体封装结构,包括:第一引线条1、第二引线条2、连接片3和二极管芯片4,该第一引线条1一端是与二极管芯片4连接的支撑区5,所述二极管芯片4一端通过焊锡膏与该支撑区5电连接,第一引线条1另一端是引脚区61,该第一引线条1的引脚区61作为所述整流器的电流传输端;
所述第二引线条2一端是与所述连接片3的第一焊接端31连接的焊接区7,该第二引线条2另一端为引脚区62,该第二引线条2的引脚区62作为所述整流器的电流传输端;
所述连接片3第二焊接端32与二极管芯片4另一端通过焊锡膏电连接;
所述第一引线条1的支撑区5与引脚区61之间区域设有一第一折弯处9,从而使得第一引线条1的支撑区5低于引脚区61;
所述第二引线条2的焊接区7为一凹槽10,此凹槽10两侧设有挡块8,所述凹槽10的深宽比为1:5~50;;
所述连接片3的第一焊接端31为一第二折弯处11,此第二折弯处11嵌入所述凹槽10内;第二折弯处11与第二焊接端32之间设置有若干个通孔12。
上述第二折弯处11与第二焊接端32夹角为钝角;上述第二折弯处11与第二焊接端32夹角为130°或者140°。
采用上述便于定位的半导体封装结构时,其避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效,大大提高了良率损失;且连接片限位精度的提升使得芯片的性能得以充分发挥,可以用较小尺寸晶粒替代原有大尺寸晶粒,进一步降低制造成本。
上述实施例只为说明本实用新型的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施,并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰,都应涵盖在本实用新型的保护范围之内。
Claims (3)
1. 一种便于定位的半导体封装结构,包括:第一引线条(1)、第二引线条(2)、连接片(3)和二极管芯片(4),该第一引线条(1)一端是与二极管芯片(4)连接的支撑区(5),所述二极管芯片(4)一端通过焊锡膏与该支撑区(5)电连接,第一引线条(1)另一端是引脚区(61),该第一引线条(1)的引脚区(61)作为所述整流器的电流传输端;
所述第二引线条(2)一端是与所述连接片(3)的第一焊接端(31)连接的焊接区(7),该第二引线条(2)另一端为引脚区(62),该第二引线条(2)的引脚区(62)作为所述整流器的电流传输端;
所述连接片(3)第二焊接端(32)与二极管芯片(4)另一端通过焊锡膏电连接;其特征在于:
所述第一引线条(1)的支撑区(5)与引脚区(61)之间区域设有一第一折弯处(9),从而使得第一引线条(1)的支撑区(5)低于引脚区(61);
所述第二引线条(2)的焊接区(7)为一凹槽(10),此凹槽(10)两侧设有挡块(8),所述凹槽(10)的深宽比为1:5~50;
所述连接片(3)的第一焊接端(31)为一第二折弯处(11),此第二折弯处(11)嵌入所述凹槽(10)内,此第二折弯处(11)与第二焊接端(32)夹角为钝角。
2. 根据权利要求1所述的半导体封装结构,其特征在于:所述第二折弯处(11)与第二焊接端(32)之间设置有若干个通孔(12)。
3. 根据权利要求1所述的半导体封装结构,其特征在于:所述第二折弯处(11)与第二焊接端(32)夹角为125°~145°。
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CN107221522A (zh) * | 2015-01-19 | 2017-09-29 | 苏州固锝电子股份有限公司 | 高良率整流器件 |
CN108598177A (zh) * | 2015-01-19 | 2018-09-28 | 苏州固锝电子股份有限公司 | 高精度高良率整流器件 |
CN114664777A (zh) * | 2022-03-11 | 2022-06-24 | 江苏长电科技股份有限公司 | Qfn封装结构及其制造方法 |
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CN107221522A (zh) * | 2015-01-19 | 2017-09-29 | 苏州固锝电子股份有限公司 | 高良率整流器件 |
CN107293530A (zh) * | 2015-01-19 | 2017-10-24 | 苏州固锝电子股份有限公司 | 高精度高良率整流器件 |
CN108598177A (zh) * | 2015-01-19 | 2018-09-28 | 苏州固锝电子股份有限公司 | 高精度高良率整流器件 |
CN108598179A (zh) * | 2015-01-19 | 2018-09-28 | 苏州固锝电子股份有限公司 | 电子产品用大电流整流芯片 |
CN108598178A (zh) * | 2015-01-19 | 2018-09-28 | 苏州固锝电子股份有限公司 | 高稳定性微电子器件 |
CN107293530B (zh) * | 2015-01-19 | 2020-03-24 | 苏州固锝电子股份有限公司 | 高精度高良率整流器件 |
CN108598178B (zh) * | 2015-01-19 | 2020-12-04 | 苏州固锝电子股份有限公司 | 微电子器件用整流芯片 |
CN114664777A (zh) * | 2022-03-11 | 2022-06-24 | 江苏长电科技股份有限公司 | Qfn封装结构及其制造方法 |
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