CN203118997U - 防偏位的二极管器件 - Google Patents

防偏位的二极管器件 Download PDF

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CN203118997U
CN203118997U CN2013200573381U CN201320057338U CN203118997U CN 203118997 U CN203118997 U CN 203118997U CN 2013200573381 U CN2013200573381 U CN 2013200573381U CN 201320057338 U CN201320057338 U CN 201320057338U CN 203118997 U CN203118997 U CN 203118997U
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张雄杰
何洪运
程琳
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Suzhou Good Ark Electronics Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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Abstract

本实用新型一种防偏位的二极管器件，包括：第一引线条、第二引线条、连接片和二极管芯片，该第一引线条一端是与二极管芯片连接的支撑区；所述第一引线条的支撑区与引脚区之间区域设有一第一折弯处，从而使得第一引线条的支撑区低于引脚区；所述第二引线条的焊接区与引脚区之间区域设有一第二折弯处，从而使得第二引线条的焊接区低于引脚区；所述第二引线条的焊接区两侧设有挡块；所述连接片的第一焊接端和第二焊接端之间设有第三折弯处，从而使得第一焊接端低于第二焊接端。本实用新型避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效，大大提高了良率。

Description

防偏位的二极管器件
技术领域
本发明涉及一种二极管器件结构，尤其涉及一种防偏位的二极管器件。
背景技术
整流器是利用二极管的单向导电特性对交流电进行整流，故被广泛应用于交流电转换成直流电的电路中。
现有连接片结构半导体产品通常对连接片无限位或采用简单沟槽结构限位，其缺点为只能对连接片做一个方向的限位，限位的目的在于避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效。当器件设计要求需要对连接片做更高精度限位时，现有结构无法达到要求，限位的目的在于避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效。
因此，如何研发一种防偏位的二极管器件，能解决上述问题，便成为本领域技术人员努力的方向。
发明内容
本实用新型目的是提供一种防偏位的二极管器件，该二极管器件避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效，大大提高了良率损失；且连接片限位精度的提升使得芯片的性能得以充分发挥，可以用较小尺寸晶粒替代原有大尺寸晶粒，进一步降低制造成本。
为达到上述目的，本实用新型采用的技术方案是：一种防偏位的二极管器件，包括：第一引线条、第二引线条、连接片和二极管芯片，该第一引线条一端是与二极管芯片连接的支撑区，所述二极管芯片一端通过焊锡膏与该支撑区电连接，第一引线条另一端是引脚区，该第一引线条的引脚区作为所述整流器的电流传输端；
所述第二引线条一端是与所述连接片的第一焊接端连接的焊接区，该第二引线条另一端为引脚区，该第二引线条的引脚区作为所述整流器的电流传输端；
所述连接片第二焊接端与二极管芯片另一端通过焊锡膏电连接；
所述第一引线条的支撑区与引脚区之间区域设有一第一折弯处，从而使得第一引线条的支撑区低于引脚区；
所述第二引线条的焊接区与引脚区之间区域设有一第二折弯处，从而使得第二引线条的焊接区低于引脚区；
所述第二引线条的焊接区两侧设有挡块；
所述连接片的第一焊接端和第二焊接端之间设有第三折弯处，从而使得第一焊接端低于第二焊接端。
上述技术方案中进一步改进的方案如下：
上述方案中，所述第二引线条的焊接区的面积大于所述第一焊接端的面积。
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：
本实用新型防偏位的二极管器件，其避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效，大大提高了良率损失；且连接片限位精度的提升使得芯片的性能得以充分发挥，可以用较小尺寸晶粒替代原有大尺寸晶粒，进一步降低制造成本。
附图说明
附图1为本实用新型防偏位的二极管器件结构示意图；
附图2为附图1的仰视结构示意图。
以上附图中：1、第一引线条；2、第二引线条；3、连接片；31、第一焊接端；32、第二焊接端；4、二极管芯片；5、支撑区；61、引脚区；62、引脚区；7、焊接区；8、挡块；9、第一折弯处；10、第二折弯处；11、第三折弯处。
具体实施方式
下面结合附图及实施例对本发明作进一步描述：
实施例：一种防偏位的二极管器件，包括：第一引线条1、第二引线条2、连接片3和二极管芯片4，该第一引线条1一端是与二极管芯片4连接的支撑区5，所述二极管芯片4一端通过焊锡膏与该支撑区5电连接，第一引线条1另一端是引脚区61，该第一引线条1的引脚区61作为所述整流器的电流传输端；
所述第二引线条2一端是与所述连接片3的第一焊接端31连接的焊接区7，该第二引线条2另一端为引脚区62，该第二引线条2的引脚区62作为所述整流器的电流传输端；
所述连接片3第二焊接端32与二极管芯片4另一端通过焊锡膏电连接；
所述第一引线条1的支撑区5与引脚区61之间区域设有一第一折弯处9，从而使得第一引线条1的支撑区5低于引脚区61；
所述第二引线条2的焊接区7与引脚区6之间区域设有一第二折弯处10，从而使得第二引线条2的焊接区7低于引脚区62；
所述第二引线条2的焊接区7两侧设有挡块8；
所述连接片3的第一焊接端31和第二焊接端32之间设有第三折弯处11，从而使得第一焊接端低于第二焊接端。
上述第二引线条2的焊接区7的面积大于所述第一焊接端31的面积。
采用上述防偏位的二极管器件时，其避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效，大大提高了良率损失；且连接片限位精度的提升使得芯片的性能得以充分发挥，可以用较小尺寸晶粒替代原有大尺寸晶粒，进一步降低制造成本。
上述实施例只为说明本实用新型的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施，并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰，都应涵盖在本实用新型的保护范围之内。

Claims (2)

1.一种防偏位的二极管器件，包括：第一引线条（1）、第二引线条（2）、连接片（3）和二极管芯片（4），该第一引线条（1）一端是与二极管芯片（4）连接的支撑区（5），所述二极管芯片（4）一端通过焊锡膏与该支撑区（5）电连接，第一引线条（1）另一端是引脚区（61），该第一引线条（1）的引脚区（61）作为所述整流器的电流传输端；
所述第二引线条（2）一端是与所述连接片（3）的第一焊接端（31）连接的焊接区（7），该第二引线条（2）另一端为引脚区（62），该第二引线条（2）的引脚区（62）作为所述整流器的电流传输端；
所述连接片（3）第二焊接端（32）与二极管芯片（4）另一端通过焊锡膏电连接；其特征在于：
所述第一引线条（1）的支撑区（5）与引脚区（61）之间区域设有一第一折弯处（9），从而使得第一引线条（1）的支撑区（5）低于引脚区（61）；
所述第二引线条（2）的焊接区（7）与引脚区（62）之间区域设有一第二折弯处（10），从而使得第二引线条（2）的焊接区（7）低于引脚区（62）；
所述第二引线条（2）的焊接区（7）两侧设有挡块（8）；
所述连接片（3）的第一焊接端（31）和第二焊接端（32）之间设有第三折弯处（11），从而使得第一焊接端低于第二焊接端。
2.根据权利要求1所述的二极管器件，其特征在于：所述第二引线条（2）的焊接区（7）的面积大于所述第一焊接端（31）的面积。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617156A (zh) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 用于微电子器件的整流芯片
CN104617073A (zh) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 用于小信号的二极管器件

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617156A (zh) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 用于微电子器件的整流芯片
CN104617073A (zh) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 用于小信号的二极管器件
CN104617156B (zh) * 2015-01-19 2017-10-13 苏州固锝电子股份有限公司 用于微电子器件的整流芯片
CN108598178A (zh) * 2015-01-19 2018-09-28 苏州固锝电子股份有限公司 高稳定性微电子器件
CN108598178B (zh) * 2015-01-19 2020-12-04 苏州固锝电子股份有限公司 微电子器件用整流芯片

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