CN104617156B - 用于微电子器件的整流芯片 - Google Patents

用于微电子器件的整流芯片 Download PDF

Info

Publication number
CN104617156B
CN104617156B CN201510026086.XA CN201510026086A CN104617156B CN 104617156 B CN104617156 B CN 104617156B CN 201510026086 A CN201510026086 A CN 201510026086A CN 104617156 B CN104617156 B CN 104617156B
Authority
CN
China
Prior art keywords
lead bar
bending section
chip
connection sheet
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510026086.XA
Other languages
English (en)
Other versions
CN104617156A (zh
Inventor
张雄杰
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201710932500.2A priority Critical patent/CN108598179B/zh
Priority to CN201510026086.XA priority patent/CN104617156B/zh
Priority to CN201710932469.2A priority patent/CN108598177A/zh
Priority to CN201710932476.2A priority patent/CN108598178B/zh
Publication of CN104617156A publication Critical patent/CN104617156A/zh
Application granted granted Critical
Publication of CN104617156B publication Critical patent/CN104617156B/zh
Priority to PCT/CN2018/087756 priority patent/WO2019071954A1/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Led Device Packages (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Die Bonding (AREA)

Abstract

本发明一种用于微电子器件的整流芯片，包括：第一引线条、第二引线条、连接片和二极管芯片；所述连接片两端之间依次为条形区、梯形区和宽体区，所述宽体区的宽度至少为条形区的宽度的3倍，所述条形区末端具有向下的第一弯曲部，所述宽体区末端具有向下的第二弯曲部；所述第二弯曲部的长度大于第一弯曲部，从而使得第一焊接端高于第二焊接端，所述焊接区两侧边均设置有侧挡块，此第二引线条的焊接区末端设置有端挡块；所述焊料层由5 %锡、92.5 %铅、2.5 %银组成。本发明采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案，从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题。

Description

用于微电子器件的整流芯片
技术领域
本发明涉及一种整流芯片，尤其涉及一种用于微电子器件的整流芯片。
背景技术
整流器件广泛应用于家电、办公、通讯器材的充电器，电源等模块；小信号二极管产品芯片尺寸极小，仅0.4mm左右，难以实现连接片工艺批量生产。打线结构一般使用金线和银胶，成本较高，且打线工艺工序复杂，效率低下。目前小信号二极管产品通常为打线结构，存在工艺效率低下，成本较高等弊端。由于芯片尺寸极小，连接片结构工艺难度高，难以实现批量生产。
在设计开发连接片结构半导体产品时，为了最大限度的利用芯片面积，通常把连接片与芯片的连接点尺寸放大到与芯片焊接区面积相当。由此带来的问题是，对连接片与芯片的相对位置精准度要求很高。现有连接片限位结构通常只能在一个方向上限位，难以达到工艺要求。现有连接片结构半导体产品通常对连接片无限位或采用简单沟槽结构限位，其缺点为只能对连接片做一个方向的限位，限位的目的在于避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效。
发明内容
本发明目的是提供一种用于微电子器件的整流芯片，该整流芯片采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案，从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题。
为达到上述目的，本发明采用的技术方案是：一种用于微电子器件的整流芯片，包括：第一引线条、第二引线条、连接片和二极管芯片，该第一引线条一端是与二极管芯片连接的支撑区，所述二极管芯片一端通过焊料层与该支撑区电连接，第一引线条另一端是第一引脚区，该第一引线条的第一引脚区作为所述整流器的电流传输端；
所述第二引线条一端是焊接区，该第二引线条另一端为第二引脚区，该第二引线条的第二引脚区作为所述整流器的电流传输端，所述二极管芯片的尺寸为0.3~1mm；
所述连接片两端之间依次为条形区、梯形区和宽体区，所述宽体区的宽度至少为条形区的宽度的3倍，所述条形区末端具有向下的第一弯曲部，所述宽体区末端具有向下的第二弯曲部；
位于第一弯曲部末端的第一焊接端与二极管芯片另一端通过焊料层电连接，位于第二弯曲部末端的第二焊接端与第二引线条的焊接区之间通过焊料层电连接，所述第二弯曲部的长度大于第一弯曲部，从而使得第一焊接端高于第二焊接端，所述焊接区两侧边均设置有侧挡块，此第二引线条的焊接区末端设置有端挡块；所述焊料层5 %锡、92.5 %铅、2.5 %银组成。
上述技术方案中进一步改进的方案如下：
1. 上述方案中，所述宽体区的宽度为条形区的宽度的5~8倍。
2. 上述方案中，所述第一弯曲部与梯形区夹角为90°~110°，所述第二弯曲部与梯形区夹角为90°~110°。
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：
本发明用于微电子器件的整流芯片，其采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案，从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题；其次，其连接片与第二引线条通过特定的结构连接，实现了对连接片在X、Y两个方向限位同时对连接片转角做限位，达到了高精度限位的要求，实现最大限度的利用芯片面积和降低芯片成本的目的，避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效，从而大大提高了良率；再次，其焊料层由5 %锡、92.5 %铅、2.5 %银组成相对现有焊料成本比单一银低96%左右，材质为铜的连接片仅为材质为金的金线成本的3%以内，金线线径一般0.025mm左右，能承受的熔断电流约0.5A，铜连接片的厚度在0.1mm左右，平均宽度0.5mm左右，能承受2A以上的电流，也克服了金线线径细，塑封成型时容易发生金线弯曲现象造成短路不良。
附图说明
附图1为现有小信号二极管器件结构示意图；
附图2为附图2的仰视结构示意图；
附图3为本发明用于微电子器件的整流芯片结构示意图；
附图4为附图3的仰视结构示意图。
以上附图中：1、第一引线条；11、第一引脚区；12、支撑区；2、第二引线条；21、第二引脚区；22、焊接区；3、连接片；31、条形区；32、梯形区；33、宽体区；4、二极管芯片；5、第一弯曲部；51、第一焊接端；6、第二弯曲部；61、第二焊接端；7、侧挡块；8、端挡块；9、焊料层。
具体实施方式
下面结合附图及实施例对本发明作进一步描述：
实施例：一种用于微电子器件的整流芯片，包括：第一引线条1、第二引线条2、连接片3和二极管芯片4，该第一引线条1一端是与二极管芯片4连接的支撑区12，所述二极管芯片4一端通过焊料层9与该支撑区12电连接，第一引线条1另一端是第一引脚区11，该第一引线条1的第一引脚区11作为所述整流器的电流传输端；
所述第二引线条2一端是焊接区22，该第二引线条2另一端为第二引脚区21，该第二引线条2的第二引脚区21作为所述整流器的电流传输端，所述二极管芯片4的尺寸为0.3~1mm；
所述连接片3两端之间依次为条形区31、梯形区32和宽体区33，所述宽体区33的宽度至少为条形区31的宽度的3倍，所述条形区31末端具有向下的第一弯曲部5，所述宽体区33末端具有向下的第二弯曲部6；
位于第一弯曲部5末端的第一焊接端51与二极管芯片4另一端通过焊料层9电连接，位于第二弯曲部6末端的第二焊接端61与第二引线条2的焊接区22之间通过焊料层9电连接，所述第二弯曲部6的长度大于第一弯曲部5，从而使得第一焊接端51高于第二焊接端61，所述焊接区22两侧边均设置有侧挡块7，此第二引线条2的焊接区22末端设置有端挡块8；所述焊料层9由5 %锡、92.5 %铅、2.5 %银组成。
上述宽体区33的宽度为条形区31的宽度的6倍。
上述第一弯曲部5与梯形区32夹角为100°，所述第二弯曲部6与梯形区32夹角为100°。
采用上述用于微电子器件的整流芯片时，其采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案，从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题；其次，其连接片与第二引线条通过特定的结构连接，实现了对连接片在X、Y两个方向限位同时对连接片转角做限位，达到了高精度限位的要求，实现最大限度的利用芯片面积和降低芯片成本的目的，避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效，从而大大提高了良率；再次，其焊料层由5 %锡、92.5 %铅、2.5 %银组成相对现有焊料成本比单一银低96%左右，材质为铜的连接片仅为材质为金的金线成本的3%以内，金线线径一般0.025mm左右，能承受的熔断电流约0.5A，铜连接片的厚度在0.1mm左右，平均宽度0.5mm左右，能承受2A以上的电流，也克服了金线线径细，塑封成型时容易发生金线弯曲现象造成短路不良。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (1)

1.一种用于微电子器件的整流芯片，包括：第一引线条（1）、第二引线条（2）、连接片（3）和二极管芯片（4），该第一引线条（1）一端是与二极管芯片（4）连接的支撑区（12），所述二极管芯片（4）一端通过焊料层（9）与该支撑区（12）电连接，第一引线条（1）另一端是第一引脚区（11），该第一引线条（1）的第一引脚区（11）作为所述整流芯片的电流传输端；
所述第二引线条（2）一端是焊接区（22），该第二引线条（2）另一端为第二引脚区（21），该第二引线条（2）的第二引脚区（21）作为所述整流芯片的电流传输端，所述二极管芯片（4）的尺寸为0.3~1mm；其特征在于：
所述连接片（3）两端之间依次为条形区（31）、梯形区（32）和宽体区（33），所述宽体区（33）的宽度至少为条形区（31）的宽度的3倍，所述条形区（31）末端具有向下的第一弯曲部（5），所述宽体区（33）末端具有向下的第二弯曲部（6）；
位于第一弯曲部（5）末端的第一焊接端（51）与二极管芯片（4）另一端通过焊料层（9）电连接，位于第二弯曲部（6）末端的第二焊接端（61）与第二引线条（2）的焊接区（22）之间通过焊料层（9）电连接，所述第二弯曲部（6）的长度大于第一弯曲部（5），从而使得第一焊接端（51）高于第二焊接端（61），所述焊接区（22）两侧边均设置有侧挡块（7），此第二引线条（2）的焊接区（22）末端设置有端挡块（8）；所述焊料层（9）由5 %锡、92.5 %铅、2.5 %银组成。
CN201510026086.XA 2015-01-19 2015-01-19 用于微电子器件的整流芯片 Active CN104617156B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201710932500.2A CN108598179B (zh) 2015-01-19 2015-01-19 电子产品用大电流整流芯片
CN201510026086.XA CN104617156B (zh) 2015-01-19 2015-01-19 用于微电子器件的整流芯片
CN201710932469.2A CN108598177A (zh) 2015-01-19 2015-01-19 高精度高良率整流器件
CN201710932476.2A CN108598178B (zh) 2015-01-19 2015-01-19 微电子器件用整流芯片
PCT/CN2018/087756 WO2019071954A1 (zh) 2015-01-19 2018-05-22 高稳定性微电子器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510026086.XA CN104617156B (zh) 2015-01-19 2015-01-19 用于微电子器件的整流芯片

Related Child Applications (3)

Application Number Title Priority Date Filing Date
CN201710932500.2A Division CN108598179B (zh) 2015-01-19 2015-01-19 电子产品用大电流整流芯片
CN201710932469.2A Division CN108598177A (zh) 2015-01-19 2015-01-19 高精度高良率整流器件
CN201710932476.2A Division CN108598178B (zh) 2015-01-19 2015-01-19 微电子器件用整流芯片

Publications (2)

Publication Number Publication Date
CN104617156A CN104617156A (zh) 2015-05-13
CN104617156B true CN104617156B (zh) 2017-10-13

Family

ID=53151513

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201710932476.2A Active CN108598178B (zh) 2015-01-19 2015-01-19 微电子器件用整流芯片
CN201710932469.2A Pending CN108598177A (zh) 2015-01-19 2015-01-19 高精度高良率整流器件
CN201510026086.XA Active CN104617156B (zh) 2015-01-19 2015-01-19 用于微电子器件的整流芯片
CN201710932500.2A Active CN108598179B (zh) 2015-01-19 2015-01-19 电子产品用大电流整流芯片

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN201710932476.2A Active CN108598178B (zh) 2015-01-19 2015-01-19 微电子器件用整流芯片
CN201710932469.2A Pending CN108598177A (zh) 2015-01-19 2015-01-19 高精度高良率整流器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710932500.2A Active CN108598179B (zh) 2015-01-19 2015-01-19 电子产品用大电流整流芯片

Country Status (2)

Country Link
CN (4) CN108598178B (zh)
WO (1) WO2019071954A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209999A (ja) * 2004-01-26 2005-08-04 Ricoh Co Ltd 半導体装置及びリードフレーム、並びに半導体装置の製造方法
CN102842550A (zh) * 2012-08-23 2012-12-26 苏州固锝电子股份有限公司 功率mosfet芯片的dfn封装结构
CN203118997U (zh) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 防偏位的二极管器件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736792A (en) * 1995-08-30 1998-04-07 Texas Instruments Incorporated Method of protecting bond wires during molding and handling
KR20140041975A (ko) * 2012-09-25 2014-04-07 삼성전자주식회사 범프 구조체 및 이를 포함하는 전기적 연결 구조체
CN203118937U (zh) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 便于定位的半导体封装结构
US9059185B2 (en) * 2013-07-11 2015-06-16 Texas Instruments Incorporated Copper leadframe finish for copper wire bonding
CN103383932A (zh) * 2013-07-12 2013-11-06 苏州固锝电子股份有限公司 用于提高芯片电性能的封装结构
CN107221522A (zh) * 2015-01-19 2017-09-29 苏州固锝电子股份有限公司 高良率整流器件
CN104985351A (zh) * 2015-06-30 2015-10-21 苏州华日金菱机械有限公司 一种用于较厚板材的焊接焊料

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209999A (ja) * 2004-01-26 2005-08-04 Ricoh Co Ltd 半導体装置及びリードフレーム、並びに半導体装置の製造方法
CN102842550A (zh) * 2012-08-23 2012-12-26 苏州固锝电子股份有限公司 功率mosfet芯片的dfn封装结构
CN203118997U (zh) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 防偏位的二极管器件

Also Published As

Publication number Publication date
CN104617156A (zh) 2015-05-13
CN108598178B (zh) 2020-12-04
CN108598179B (zh) 2023-01-31
WO2019071954A1 (zh) 2019-04-18
CN108598178A (zh) 2018-09-28
CN108598177A (zh) 2018-09-28
CN108598179A (zh) 2018-09-28

Similar Documents

Publication Publication Date Title
CN106449538A (zh) 贴片式整流器件结构
CN104617073B (zh) 用于小信号的二极管器件
CN201413823Y (zh) 表面贴装双芯片二极管整流器件
CN101630676B (zh) 新型直接敷铜基板布局的绝缘栅双极性晶体管模块
CN201508835U (zh) 新型直接敷铜基板布局的绝缘栅双极性晶体管模块
CN104617156B (zh) 用于微电子器件的整流芯片
CN202549830U (zh) 半导体装置
CN208077970U (zh) 一种三相整流桥元器件封装结构
CN204441276U (zh) 用于小信号的二极管器件
CN104900620A (zh) 一种塑封式ipm的pcb板固定结构及其固定方法
CN204441274U (zh) 具有新型连接片的二极管器件
CN202523700U (zh) 一种aap功率模块
CN209029372U (zh) 一种用于大功率多管芯封装结构
CN209199876U (zh) 贴片电子元器件
CN203118997U (zh) 防偏位的二极管器件
CN204464265U (zh) 高可靠性整流芯片的封装结构
CN220569673U (zh) 一种键合片和引线框架一体设置的功率模块
CN103000724B (zh) 一种光伏电池保护模块
CN102637611A (zh) 一种aap功率模块的制造方法
CN204204843U (zh) 晶片封装结构
CN203038916U (zh) To220封装引线框架
CN212136440U (zh) 超薄微型桥堆半导体器件
CN202167479U (zh) 一种贴片式二极管改良结构
CN203218229U (zh) 芯片pad点之间的铜线键合结构
CN209981205U (zh) 一种高散热插件二极管

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant