CN204441276U - 用于小信号的二极管器件 - Google Patents

用于小信号的二极管器件 Download PDF

Info

Publication number
CN204441276U
CN204441276U CN201520032962.5U CN201520032962U CN204441276U CN 204441276 U CN204441276 U CN 204441276U CN 201520032962 U CN201520032962 U CN 201520032962U CN 204441276 U CN204441276 U CN 204441276U
Authority
CN
China
Prior art keywords
lead
bend
wire bar
brace
slab region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201520032962.5U
Other languages
English (en)
Inventor
张雄杰
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201520032962.5U priority Critical patent/CN204441276U/zh
Application granted granted Critical
Publication of CN204441276U publication Critical patent/CN204441276U/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005Shape
    • H01L2224/4009Loop shape
    • H01L2224/40091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本实用新型一种用于小信号的二极管器件,包括:第一引线条、第二引线条、连接片和二极管芯片;所述连接片两端之间依次为条形区、梯形区和宽体区,所述宽体区的宽度至少为条形区的宽度的3倍,所述条形区末端具有向下的第一弯曲部,所述宽体区末端具有向下的第二弯曲部;所述第二弯曲部的长度大于第一弯曲部,从而使得第一焊接端高于第二焊接端,所述焊接区两侧边均设置有侧挡块,此第二引线条的焊接区末端设置有端挡块。本实用新型采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案,从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题。

Description

用于小信号的二极管器件
技术领域
本实用新型涉及一种二极管器件,尤其涉及一种用于小信号的二极管器件。
背景技术
整流/稳压器件广泛应用于家电、办公、通讯器材的充电器,电源等模块;小信号二极管产品芯片尺寸极小,仅0.4mm左右,难以实现连接片工艺批量生产。打线结构一般使用金线和银胶,成本较高,且打线工艺工序复杂,效率低下。目前小信号二极管产品通常为打线结构,存在工艺效率低下,成本较高等弊端。由于芯片尺寸极小,连接片结构工艺难度高,难以实现批量生产。
在设计开发连接片结构半导体产品时,为了最大限度的利用芯片面积,通常把连接片与芯片的连接点尺寸放大到与芯片焊接区面积相当。由此带来的问题是,对连接片与芯片的相对位置精准度要求很高。现有连接片限位结构通常只能在一个方向上限位,难以达到工艺要求。现有连接片结构半导体产品通常对连接片无限位或采用简单沟槽结构限位,其缺点为只能对连接片做一个方向的限位,限位的目的在于避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效。
发明内容
本实用新型目的是提供一种用于小信号的二极管器件,该二极管器件其采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案,从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题。
为达到上述目的,本实用新型采用的技术方案是:一种用于小信号的二极管器件,包括:第一引线条、第二引线条、连接片和二极管芯片,该第一引线条一端是与二极管芯片连接的支撑区,所述二极管芯片一端通过焊锡膏与该支撑区电连接,第一引线条另一端是第一引脚区,该第一引线条的第一引脚区作为所述整流器的电流传输端;
所述第二引线条一端是焊接区,该第二引线条另一端为第二引脚区,该第二引线条的第二引脚区作为所述整流器的电流传输端,所述二极管芯片的尺寸为0.3~1mm;
所述连接片两端之间依次为条形区、梯形区和宽体区,所述宽体区的宽度至少为条形区的宽度的3倍,所述条形区末端具有向下的第一弯曲部,所述宽体区末端具有向下的第二弯曲部;
位于第一弯曲部末端的第一焊接端与二极管芯片另一端通过焊锡膏电连接,位于第二弯曲部末端的第二焊接端与第二引线条的焊接区之间通过焊锡膏电连接,所述第二弯曲部的长度大于第一弯曲部,从而使得第一焊接端高于第二焊接端,所述焊接区两侧边均设置有侧挡块,此第二引线条的焊接区末端设置有端挡块。
上述技术方案中进一步改进的方案如下:
1. 上述方案中,所述宽体区的宽度为条形区的宽度的5~8倍。
2. 上述方案中,所述第一弯曲部与梯形区夹角为90°~110°,所述第二弯曲部与梯形区夹角为90°~110°。
由于上述技术方案运用,本实用新型与现有技术相比具有下列优点和效果:
本实用新型用于小信号的二极管器件,其采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案,从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题;其次,其连接片与第二引线条通过特定的结构连接,实现了对连接片在X、Y两个方向限位同时对连接片转角做限位,达到了高精度限位的要求,实现最大限度的利用芯片面积和降低芯片成本的目的,避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效,从而大大提高了良率。
附图说明
附图1为现有小信号二极管器件结构示意图;
附图2为附图2的仰视结构示意图;
附图3为本实用新型用于小信号的二极管器件结构示意图;
附图4为附图3的仰视结构示意图。
以上附图中:1、第一引线条;11、第一引脚区;12、支撑区;2、第二引线条;21、第二引脚区;22、焊接区;3、连接片;31、条形区;32、梯形区;33、宽体区;4、二极管芯片;5、第一弯曲部;51、第一焊接端;6、第二弯曲部;61、第二焊接端;7、侧挡块;8、端挡块。
具体实施方式
下面结合附图及实施例对本实用新型作进一步描述:
实施例:一种用于小信号的二极管器件,包括:第一引线条1、第二引线条2、连接片3和二极管芯片4,该第一引线条1一端是与二极管芯片4连接的支撑区12,所述二极管芯片4一端通过焊锡膏与该支撑区12电连接,第一引线条1另一端是第一引脚区11,该第一引线条1的第一引脚区11作为所述整流器的电流传输端;
所述第二引线条2一端是焊接区22,该第二引线条2另一端为第二引脚区21,该第二引线条2的第二引脚区21作为所述整流器的电流传输端,所述二极管芯片4的尺寸为0.3~1mm;
所述连接片3两端之间依次为条形区31、梯形区32和宽体区33,所述宽体区33的宽度至少为条形区31的宽度的3倍,所述条形区31末端具有向下的第一弯曲部5,所述宽体区33末端具有向下的第二弯曲部6;
位于第一弯曲部5末端的第一焊接端51与二极管芯片4另一端通过焊锡膏电连接,位于第二弯曲部6末端的第二焊接端61与第二引线条2的焊接区22之间通过焊锡膏电连接,所述第二弯曲部6的长度大于第一弯曲部5,从而使得第一焊接端51高于第二焊接端61,所述焊接区22两侧边均设置有侧挡块7,此第二引线条2的焊接区22末端设置有端挡块8。
上述宽体区33的宽度为条形区31的宽度的6倍。
上述第一弯曲部5与梯形区32夹角为100°,所述第二弯曲部6与梯形区32夹角为100°。
采用上述用于小信号的二极管器件时,其采用特定的连接片代替了现有0.4mm尺寸以及以下的芯片通过金线和银胶的方案,从工艺设计上解决了由于焊料用量极小、焊料分配稳定性差和精度差的技术问题;其次,其连接片与第二引线条通过特定的结构连接,实现了对连接片在X、Y两个方向限位同时对连接片转角做限位,达到了高精度限位的要求,实现最大限度的利用芯片面积和降低芯片成本的目的,避免在入炉焊接过程中连接片偏位造成连接片上的连接点偏出芯片焊接区导致产品电性失效,从而大大提高了良率。
上述实施例只为说明本实用新型的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施,并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰,都应涵盖在本实用新型的保护范围之内。

Claims (3)

1. 一种用于小信号的二极管器件,包括:第一引线条(1)、第二引线条(2)、连接片(3)和二极管芯片(4),该第一引线条(1)一端是与二极管芯片(4)连接的支撑区(12),所述二极管芯片(4)一端通过焊锡膏与该支撑区(12)电连接,第一引线条(1)另一端是第一引脚区(11),该第一引线条(1)的第一引脚区(11)作为所述整流器的电流传输端;
所述第二引线条(2)一端是焊接区(22),该第二引线条(2)另一端为第二引脚区(21),该第二引线条(2)的第二引脚区(21)作为所述整流器的电流传输端,所述二极管芯片(4)的尺寸为0.3~1mm;其特征在于:
所述连接片(3)两端之间依次为条形区(31)、梯形区(32)和宽体区(33),所述宽体区(33)的宽度至少为条形区(31)的宽度的3倍,所述条形区(31)末端具有向下的第一弯曲部(5),所述宽体区(33)末端具有向下的第二弯曲部(6);
位于第一弯曲部(5)末端的第一焊接端(51)与二极管芯片(4)另一端通过焊锡膏电连接,位于第二弯曲部(6)末端的第二焊接端(61)与第二引线条(2)的焊接区(22)之间通过焊锡膏电连接,所述第二弯曲部(6)的长度大于第一弯曲部(5),从而使得第一焊接端(51)高于第二焊接端(61),所述焊接区(22)两侧边均设置有侧挡块(7),此第二引线条(2)的焊接区(22)末端设置有端挡块(8)。
2. 根据权利要求1所述的用于小信号的二极管器件,其特征在于:所述宽体区(33)的宽度为条形区(31)的宽度的5~8倍。
3. 根据权利要求1所述的用于小信号的二极管器件,其特征在于:所述第一弯曲部(5)与梯形区(32)夹角为90°~110°,所述第二弯曲部(6)与梯形区(32)夹角为90°~110°。
CN201520032962.5U 2015-01-19 2015-01-19 用于小信号的二极管器件 Active CN204441276U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520032962.5U CN204441276U (zh) 2015-01-19 2015-01-19 用于小信号的二极管器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520032962.5U CN204441276U (zh) 2015-01-19 2015-01-19 用于小信号的二极管器件

Publications (1)

Publication Number Publication Date
CN204441276U true CN204441276U (zh) 2015-07-01

Family

ID=53609109

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520032962.5U Active CN204441276U (zh) 2015-01-19 2015-01-19 用于小信号的二极管器件

Country Status (1)

Country Link
CN (1) CN204441276U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617073A (zh) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 用于小信号的二极管器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617073A (zh) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 用于小信号的二极管器件
CN107204319A (zh) * 2015-01-19 2017-09-26 苏州固锝电子股份有限公司 小信号用稳压半导体器件

Similar Documents

Publication Publication Date Title
WO2012109265A3 (en) Three-dimensional power supply module having reduced switch node ringing
CN104617073A (zh) 用于小信号的二极管器件
CN204441276U (zh) 用于小信号的二极管器件
CN201956345U (zh) Gpp高压二极管
CN101868123B (zh) 印刷电路板及设计方法
CN204441274U (zh) 具有新型连接片的二极管器件
CN203118997U (zh) 防偏位的二极管器件
CN104617156A (zh) 用于微电子器件的整流芯片
CN204464265U (zh) 高可靠性整流芯片的封装结构
CN203118937U (zh) 便于定位的半导体封装结构
CN204577425U (zh) 新型光伏旁路集成模块
CN104900620A (zh) 一种塑封式ipm的pcb板固定结构及其固定方法
CN204424264U (zh) 一种太阳能专用二极管
CN204230400U (zh) 一种用于增加微波器件匹配电路中的键合线电感连接模型
CN203733808U (zh) 整流二极管器件
CN204732398U (zh) 引线电极结构、框架及电子器件
CN203386741U (zh) 一种引脚框架
CN204706559U (zh) 一种引线框架
CN203118996U (zh) 具有防偏位功能的二极管结构
CN204204843U (zh) 晶片封装结构
CN203118934U (zh) 贴片式二极管器件
CN203038915U (zh) 一种to-252-3lb引线框架结构
CN203733806U (zh) 轴向型贴片二极管器件
CN203423168U (zh) 一种整流桥结构
CN209981205U (zh) 一种高散热插件二极管

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant