CN202758893U - 一种晶体管版图结构及芯片版图结构 - Google Patents
一种晶体管版图结构及芯片版图结构 Download PDFInfo
- Publication number
- CN202758893U CN202758893U CN 201220383542 CN201220383542U CN202758893U CN 202758893 U CN202758893 U CN 202758893U CN 201220383542 CN201220383542 CN 201220383542 CN 201220383542 U CN201220383542 U CN 201220383542U CN 202758893 U CN202758893 U CN 202758893U
- Authority
- CN
- China
- Prior art keywords
- transistor
- contact hole
- gate regions
- domain structure
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220383542 CN202758893U (zh) | 2012-08-03 | 2012-08-03 | 一种晶体管版图结构及芯片版图结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220383542 CN202758893U (zh) | 2012-08-03 | 2012-08-03 | 一种晶体管版图结构及芯片版图结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202758893U true CN202758893U (zh) | 2013-02-27 |
Family
ID=47738058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201220383542 Expired - Lifetime CN202758893U (zh) | 2012-08-03 | 2012-08-03 | 一种晶体管版图结构及芯片版图结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202758893U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110060998A (zh) * | 2019-04-29 | 2019-07-26 | 厦门天马微电子有限公司 | 一种反相电路结构、栅极驱动电路及显示面板 |
CN110262144A (zh) * | 2015-01-13 | 2019-09-20 | 群创光电股份有限公司 | 显示面板 |
WO2020135378A1 (zh) * | 2018-12-25 | 2020-07-02 | 无锡华润上华科技有限公司 | 一种沟槽型vdmos的元胞版图结构 |
-
2012
- 2012-08-03 CN CN 201220383542 patent/CN202758893U/zh not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110262144A (zh) * | 2015-01-13 | 2019-09-20 | 群创光电股份有限公司 | 显示面板 |
WO2020135378A1 (zh) * | 2018-12-25 | 2020-07-02 | 无锡华润上华科技有限公司 | 一种沟槽型vdmos的元胞版图结构 |
CN110060998A (zh) * | 2019-04-29 | 2019-07-26 | 厦门天马微电子有限公司 | 一种反相电路结构、栅极驱动电路及显示面板 |
CN110060998B (zh) * | 2019-04-29 | 2022-05-17 | 厦门天马微电子有限公司 | 一种反相电路结构、栅极驱动电路及显示面板 |
US11508761B2 (en) | 2019-04-29 | 2022-11-22 | Xiamen Tianma Micro-Electronics Co., Ltd. | Inverter circuit structure, gate driving circuit and display panel |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9337099B1 (en) | Special constructs for continuous non-uniform active region FinFET standard cells | |
CN202758893U (zh) | 一种晶体管版图结构及芯片版图结构 | |
TW201405776A (zh) | 使用擴散接觸結構基於交叉耦合的設計 | |
CN104854701A (zh) | 半导体装置 | |
CN104409454B (zh) | 一种nldmos防静电保护管 | |
CN203134807U (zh) | 绝缘栅型双极晶体管 | |
CN104269440A (zh) | 堆栈式n型晶体管以及静电保护电路 | |
CN102918643A (zh) | 半导体集成电路装置 | |
CN102142462A (zh) | 一种非对称结构的功率mos晶体管及其阵列 | |
CN102339850A (zh) | 一种八边形网格状mosfet功率管版图结构 | |
CN103354237B (zh) | 半导体器件 | |
JP2013201191A (ja) | 半導体装置 | |
CN102637738A (zh) | 高压多栅极元件及其制造方法 | |
JP2015032733A (ja) | 半導体装置 | |
CN103050442B (zh) | 具有抗静电放电能力的功率半导体器件及制造方法 | |
CN103872109A (zh) | 一种绝缘栅双级晶体管 | |
CN202120258U (zh) | Igbt版图 | |
CN105097890B (zh) | 线型架构的功率半导体元件 | |
JP2009224811A (ja) | 半導体装置 | |
CN111446240A (zh) | 带静电自保护的mos管结构 | |
CN206388707U (zh) | 用于兼顾igbt短路能力与开关速度的版图结构 | |
CN208738245U (zh) | 半导体器件 | |
CN105470308B (zh) | 一种mos管 | |
CN102623496B (zh) | 矩阵型mos场效应晶体管 | |
CN216563140U (zh) | 一种半导体功率器件结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHENZHEN STATEMICRO ELECTRONICS CO., LTD. Free format text: FORMER OWNER: CHENGDU STATEMICRO ELECTRONICS CO., LTD. Effective date: 20150120 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 610000 TO: 518063 SHENZHEN, GUANGDONG PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150120 Address after: 518063 Guangdong city of Shenzhen province Nanshan District Gao Xin Road No. 015 building six layer A in micro research Patentee after: SHENZHEN STATE MICROELECTRONICS Co.,Ltd. Address before: 3 building, A1 building, A District, Tianfu Software Park, Chengdu hi tech Zone, Sichuan, 610000 Patentee before: CHENGDU STATE MICROELECTRONIC Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20130227 |