CN202658262U - Heating coil for drawing five-inch zone-melting single crystal silicon - Google Patents
Heating coil for drawing five-inch zone-melting single crystal silicon Download PDFInfo
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- CN202658262U CN202658262U CN 201220235934 CN201220235934U CN202658262U CN 202658262 U CN202658262 U CN 202658262U CN 201220235934 CN201220235934 CN 201220235934 CN 201220235934 U CN201220235934 U CN 201220235934U CN 202658262 U CN202658262 U CN 202658262U
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- heating coil
- panel body
- melting
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Abstract
The utility model relates to a heating coil for drawing five-inch zone-melting single crystal silicon. The heating coil comprises a coil panel body, wherein the coil panel body is connected with an external coil flange plate; and meanwhile, an annular coil water path is arranged at the periphery of the coil panel body in a surrounding manner, and the outer diameter of the coil panel body is 130 mm-250 mm. The heating coil for drawing the five-inch zone-melting single crystal silicon has the beneficial effects that the inner diameter of a single-turn heating coil of a product is small, and a melting zone in which the waist is thin and the distance is short can be formed, so that the product is more stable; a magnetic field stress is generated after the heating process in the production to form a non-dynamic balance condition together with an in-furnace growth condition, so that the circular production is benefitted; particularly for the large-diameter single crystal growth, the success rate can be improved, the loss of power dissipation is beneficially reduced, and the power use ratio is improved; the magnetic fields generated in the growth process can be changed by adopting different coils according to the raw materials with different diameters, and the changes to the shapes and the rotating angles of the raw materials are more ideal; and the phenomenon of silicon burr removing of a polycrystal raw material is benefitted, and the crystallization is more stable.
Description
Technical field
The utility model relates to silicon preparation technology, relates in particular to a kind of for drawing 5 cun study on floating zone silicon heater coils.
Background technology
Zone melting method is by the ring-band shape well heater with a polycrystalline silicon rod, to produce the local phenomenon of melting, control process of setting again and growing single-crystal is excellent, when growing single-crystal, make cylindrical silicon rod be fixed in the vertical direction rotation, heat in argon gas atmosphere with radio-frequency induction coil, make the bottom of rod and between the close co-axially fixed single crystal seed in its underpart, form molten drop, these two rods rotate in the opposite direction, the melting zone that then will only depend on surface tension to form between polycrystalline rod and seed crystal progressively moves up along rod is long, converts thereof into monocrystalline.But for present same device, much unreasonable limited because of loop construction and local size, make its power that grows into that is unfavorable for major diameter single crystal, particularly not obvious for the diameter of polycrystal raw material shape effects different and irregular movement, exist silicon thorn phenomenon, become brilliant unstable.Therefore, for above aspect, need to reasonably improve prior art.
The utility model content
For above defective, the utility model provides a kind of and is conducive to improve crystal forming rate, reduces power consumption penalty, can eliminate silicon thorn phenomenon, is beneficial to heat radiation, stable being used for of Cheng Jinggeng draws 5 cun study on floating zone silicon heater coils, with many deficiencies of solution prior art.
For achieving the above object, the utility model is by the following technical solutions:
A kind ofly comprise the coil disk body for drawing 5 cun study on floating zone silicon heater coils, this coil disk body and outer coil ring flange join, and simultaneously, described coil panel body periphery is around arranging the toroidal coil water route, and this coil panel body diameter is set to 130mm-250mm.
Beneficial effect for drawing 5 cun study on floating zone silicon heater coils described in the utility model is:
(1) product single turn heater coil internal diameter is little, can form the melting zone that waist is thin, distance is short, makes it more stable; Be not subjected to the restriction of internal coil diameter, be suitable for preparing major diameter FZ silicon single-crystal, produce aborning magnetic field stress after the heating, and growth conditions forms a non-dynamic equilibrium conditions in the stove, thereby be conducive to cyclic production;
(2) widened the coil waterway structure by optimization, the coil generation of heat produce to(for) monocrystalline is beneficial to heat radiation, is conducive to protect product, improves crystal forming rate, especially can improves success ratio for the large diameter single crystals growth;
(3) the coil legs and feet have increased the cross-sectional area of electrode, are beneficial to the loss that reduces power consumption, have improved power utilization;
(4) by setting up the coil step, the magnetic field that produces in the time of can adopting different coils to change growth according to the raw material of different diameter is beneficial to the growth of monocrystalline, and the monocrystalline success ratio uprises, but production technique cost relative reduce;
(5) change by the coil angle of inclination changes the direction in heating magnetic field, and is comparatively desirable for the Angulation changes of the shape of raw material material and rotation;
(6) by the accurate setting of coil diameter (external diameter) size, the diameter shape material different and irregular movement that is conducive to polycrystal raw material has good effect, is conducive to the phenomenon that polycrystal raw material is eliminated the silicon thorn, and Cheng Jinggeng is stable.
Description of drawings
The below is described in further detail the utility model with reference to the accompanying drawings.
Fig. 1 is that the utility model embodiment is described for drawing 5 cun study on floating zone silicon heater coil synoptic diagram.
Among the figure:
1, coil ring flange; 2, hub of a spool; 3, coil step; 4, coil water route; 5, coil disk body.
Embodiment
As shown in Figure 1, the utility model embodiment is described for drawing 5 cun study on floating zone silicon heater coils, comprise coil disk body 5, this coil disk body 5 joins with outer coil ring flange 1, hub of a spool 2 peripheries that are positioned at coil disk body 5 arrange coil step 3, simultaneously, described coil disk body 5 peripheries are around a turn coil water route 4 is set; In addition, also change for the seam of the coil in the working coil, the slanted angle of coil seam is between 40 ° to 70 °, and the altitude range of described coil step 3 is 1mm-3mm, and these coil disk body 5 external diameter scopes are 130mm-250mm.This product single turn heater coil internal diameter is little, can form the melting zone that waist is thin, distance is short, makes it more stable; Be not subjected to the restriction of internal coil diameter, be suitable for preparing major diameter FZ silicon single-crystal, produce aborning magnetic field stress after the heating, and growth conditions forms a non-dynamic equilibrium conditions in the stove, thereby be conducive to cyclic production; During coil uses, produce excess Temperature and be unfavorable for single crystal growing, optimization design has also been made in the water route for coil in this product.
Above embodiment is more preferably embodiment a kind of of the utility model, and the common variation that those skilled in the art carry out in the technical program scope and replacing should be included in the protection domain of the present utility model.
Claims (1)
1. one kind is used for drawing 5 cun study on floating zone silicon heater coils, comprise coil disk body (5), this coil disk body (5) joins with outer coil ring flange (1), it is characterized in that: described coil disk body (5) is peripheral around toroidal coil water route (4) is set, and this coil disk body (5) external diameter is set to 130mm-250mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220235934 CN202658262U (en) | 2012-05-24 | 2012-05-24 | Heating coil for drawing five-inch zone-melting single crystal silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220235934 CN202658262U (en) | 2012-05-24 | 2012-05-24 | Heating coil for drawing five-inch zone-melting single crystal silicon |
Publications (1)
Publication Number | Publication Date |
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CN202658262U true CN202658262U (en) | 2013-01-09 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 201220235934 Expired - Fee Related CN202658262U (en) | 2012-05-24 | 2012-05-24 | Heating coil for drawing five-inch zone-melting single crystal silicon |
Country Status (1)
Country | Link |
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CN (1) | CN202658262U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103966658A (en) * | 2013-02-01 | 2014-08-06 | 刘剑 | Double water circuit cooling zone melting induction coil |
CN106702474A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Technology for eliminating polycrystalline thorns in FZ silicon growth |
-
2012
- 2012-05-24 CN CN 201220235934 patent/CN202658262U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103966658A (en) * | 2013-02-01 | 2014-08-06 | 刘剑 | Double water circuit cooling zone melting induction coil |
CN106702474A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Technology for eliminating polycrystalline thorns in FZ silicon growth |
CN106702474B (en) * | 2015-07-20 | 2019-04-12 | 有研半导体材料有限公司 | The technique of polycrystalline thorn is eliminated in a kind of growth of zone-melted silicon single crystal |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130109 Termination date: 20170524 |