CN203741453U - Single crystal silicon thermal field - Google Patents
Single crystal silicon thermal field Download PDFInfo
- Publication number
- CN203741453U CN203741453U CN201420078861.7U CN201420078861U CN203741453U CN 203741453 U CN203741453 U CN 203741453U CN 201420078861 U CN201420078861 U CN 201420078861U CN 203741453 U CN203741453 U CN 203741453U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal silicon
- crucible
- thermal field
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a single crystal silicon thermal field which comprises a furnace body, a crucible, a heater and a guide cylinder, wherein the crucible is arranged in the furnace body; the heater is arranged between the furnace body and the crucible; the guide cylinder is fixed inside the furnace body and is positioned above the crucible; and the guide cylinder comprises an inner cylinder body (11) and an outer cylinder body (12) which is arranged outside the inner cylinder body (11) in a sleeving manner. According to the single crystal silicon thermal field disclosed by the utility model, due to the design of the guide cylinder of which the inner cylinder body and the outer cylinder body can be separated, insufficient reaction between argon gas and volatile matters, caused by an overlarge gap between the guide cylinder and the crucible, is avoided, and thus the pollution to the single crystal silicon growth environment is avoided, and the finished product rate and the production efficiency of single crystal silicon are increased.
Description
Technical field
The utility model relates to silicon single crystal manufacturing apparatus, relates in particular to a kind of single crystal silicon thermal field.
Background technology
Along with the development of electronics, semi-conductor, photovoltaic industry, various crystalline materials, the particularly high-tech added value material taking silicon single crystal as representative and the development of relevant hi-tech industry thereof, become the pillar of modern information technology industry, and make information industry become fastest-rising guiding industry in global economy development.Silicon single crystal has potential as one, and the high-tech resource urgently developing, is just causing increasing concern and attention.Meanwhile, in view of the finiteness of conventional energy resources supply and the increase of environmental protection pressure, many countries are just starting to develop the upsurge of sun power and become various countries' formulation strategy of sustainable development and are cutting important content in the world.Striding into after 21 century threshold, world's most countries participates in enthusiastically so that has started in the world " green energy resource heat " that solar energy development utilizes, one is utilized the epoch of sun power to arrive widely on a large scale, and solar level single crystal silicon product also will be therefore very powerful and exceedingly arrogant.Silicon single crystal is the vertical pulling method production technique that adopt in process of production more: polycrystalline silicon raw material is put into quartz crucible, heat fused.Adjust the zero pour of temperature to silicon, seed crystal (seed of crystal growth) is contacted with molten silicon, control temperature and pulling rate (speed that seed crystal upwards lifts), molten silicon is grown up to aimed dia from seed crystal, submit to pulling rate to make crystal keep equal diameter growth.When molten silicon in crucible runs low, adjust temperature and pulling rate, crystal diameter is dwindled gradually, until become taper.Finally promote crystal and make it to depart from fusion silicon liquid level, complete the process of a crystal growth.Along with the needs of producing, in thermal field, can adopt the crucible of different model and size, like this, just cause the gap between crucible inwall and guide shell outer wall to change, cause product quality disunity, the problems such as fraction defective height.
Utility model content
The purpose of this utility model is to provide a kind of single crystal silicon thermal field.
Single crystal silicon thermal field provided by the utility model, comprises body of heater, crucible, well heater and guide shell; Described crucible is located in described body of heater; Described well heater is located between described body of heater and described crucible; Described guide shell is fixed on described body of heater inside and is positioned at the top of described crucible; Described guide shell comprises inner barrel (11) and is set in the outside outer cylinder body (12) of described inner barrel (11).
Described single crystal silicon thermal field also comprises an annular lid (10), and described annular lid (10) is fixed on the inwall of described body of heater; Described inner barrel (11) and outer cylinder body (12) are all suspended on the inner ring of described annular lid (10).Described annular lid (10) is provided with first ring connected in star (101) near the position at inner ring edge, described outer cylinder body (12) is provided with the first ring edge (126), and the bottom of described the first ring edge (126) is provided with the first annular flange flange (124) matching with described first ring connected in star (101).The top of described the first ring edge (126) is provided with the second annular recesses (125), described inner barrel (11) is provided with the second ring edge (112), and the bottom of described the second ring edge (112) is provided with the second annular flange flange (113) coordinating with described the second annular recesses (125) shape.Described outer cylinder body (12) also comprises urceolus diapire (122) and outer tube side wall (121); Described inner barrel (11) also comprises inner core sidewall; Between described urceolus diapire (122), outer tube side wall (121) and inner core sidewall, form a triangular open space (130).The edge of described urceolus diapire (122) is provided with the 3rd annular flange flange (123); The lower edge of described content sidewall is provided with the 3rd annular recesses (111) matching with described the 3rd annular flange flange (123).
Single crystal silicon thermal field provided by the utility model, by the separable guide shell design of inside and outside cylinder, avoid because the excessive argon gas causing in the space between described guide shell and described crucible reacts insufficient with volatile matter, thereby avoid the pollution due to monocrystalline silicon growing environment, improve yield rate and the production efficiency of silicon single crystal.
Brief description of the drawings
Fig. 1 is the guide shell assembling schematic diagram of the single crystal silicon thermal field described in the utility model embodiment;
Fig. 2 is the guide shell structural representation of the single crystal silicon thermal field described in the utility model embodiment.
Embodiment
For making object, technical scheme and the advantage of the utility model embodiment clearer, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is the utility model part embodiment, instead of whole embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1 or 2, the single crystal silicon thermal field that the present embodiment provides, comprises body of heater, crucible, well heater and guide shell; Described crucible is located in described body of heater; Described well heater is located between described body of heater and described crucible; Described guide shell is fixed on described body of heater inside and is positioned at the top of described crucible; Described guide shell comprises inner barrel 11 and is set in the outer cylinder body 12 of described inner barrel 11 outsides.It will be understood by those skilled in the art that in the process of growth of silicon single crystal, in body of heater, can be filled with argon gas, argon gas forms air-flow in body of heater, and the volatile matter that silicon single crystal is produced in process of growth is taken out of outside body of heater.The shape and the size that it will be understood by those skilled in the art that described inner barrel 11 need be adjusted along with the size of single crystal silicon product, and the diameter of silicon single crystal is larger, need the internal diameter of described inner barrel 11 larger; The shape of described outer cylinder body 12 and size need be adjusted along with the size of crucible, the diameter of described crucible is larger, need the outer wall dimension of described outer cylinder body 12 larger, to avoid because the excessive argon gas causing in the space between described guide shell and described crucible reacts insufficient with volatile matter, thereby avoid the pollution due to monocrystalline silicon growing environment, improve yield rate and the production efficiency of silicon single crystal.Described guide shell is set to inner barrel 11 and the mutually sheathed structure of outer outer cylinder body 12, can combine as required the inside and outside cylindrical shell 12 of different model and size, and there is to coordinate the size of silicon single crystal and crucible on limit.
Described single crystal silicon thermal field also comprises an annular lid 10, and described annular lid 10 is fixed on the inwall of described body of heater; Described inner barrel 11 and outer cylinder body 12 are all suspended on the inner ring of described annular lid 10.Like this, can realize the top that described guide shell is fixed on to described body of heater inside and is positioned at described crucible.
Described annular lid 10 is provided with first ring connected in star 101 near the position at inner ring edge, described outer cylinder body 12 is provided with the first ring edge 126, and the bottom of described the first ring edge 126 is provided with the first annular flange flange 124 matching with described first ring connected in star 101.Like this, can realize more firm described outer cylinder body 12 being fixed on described annular lid 10.
The top of described the first ring edge 126 is provided with the second annular recesses 125, and described inner barrel 11 is provided with the second ring edge 112, and the bottom of described the second ring edge 112 is provided with the second annular flange flange 113 coordinating with described the second annular recesses 125 shapes.Like this, can realize more firm described inner barrel 11 mutually sheathed with described outer cylinder body 12.
Described outer cylinder body 12 also comprises urceolus diapire 122 and outer tube side wall 121; Described inner barrel 11 also comprises inner core sidewall; Between described urceolus diapire 122, outer tube side wall 121 and inner core sidewall, form a triangular open space 130, to reach the object that regulates guide shell shape and size.
The edge of described urceolus diapire 122 is provided with the 3rd annular flange flange 123; The lower edge of described content sidewall is provided with the 3rd annular recesses 111 matching with described the 3rd annular flange flange 123.What like this, can make that described outer cylinder body 12 and inner barrel 11 combine is more firm.
Finally it should be noted that: above embodiment only, in order to the technical solution of the utility model to be described, is not intended to limit; Although the utility model is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of the each embodiment technical scheme of the utility model.
Claims (6)
1. a single crystal silicon thermal field, comprises body of heater, crucible, well heater and guide shell; Described crucible is located in described body of heater; Described well heater is located between described body of heater and described crucible; Described guide shell is fixed on described body of heater inside and is positioned at the top of described crucible; It is characterized in that: described guide shell comprises inner barrel (11) and is set in the outside outer cylinder body (12) of described inner barrel (11).
2. single crystal silicon thermal field as claimed in claim 1, is characterized in that: described single crystal silicon thermal field also comprises an annular lid (10), and described annular lid (10) is fixed on the inwall of described body of heater; Described inner barrel (11) and outer cylinder body (12) are all suspended on the inner ring of described annular lid (10).
3. single crystal silicon thermal field as claimed in claim 2, it is characterized in that: described annular lid (10) is provided with first ring connected in star (101) near the position at inner ring edge, described outer cylinder body (12) is provided with the first ring edge (126), and the bottom of described the first ring edge (126) is provided with the first annular flange flange (124) matching with described first ring connected in star (101).
4. single crystal silicon thermal field as claimed in claim 3, it is characterized in that: the top of described the first ring edge (126) is provided with the second annular recesses (125), described inner barrel (11) is provided with the second ring edge (112), and the bottom of described the second ring edge (112) is provided with the second annular flange flange (113) coordinating with described the second annular recesses (125) shape.
5. single crystal silicon thermal field as claimed in claim 4, is characterized in that: described outer cylinder body (12) also comprises urceolus diapire (122) and outer tube side wall (121); Described inner barrel (11) also comprises inner core sidewall; Between described urceolus diapire (122), outer tube side wall (121) and inner core sidewall, form a triangular open space (130).
6. single crystal silicon thermal field as claimed in claim 5, is characterized in that: the edge of described urceolus diapire (122) is provided with the 3rd annular flange flange (123); The lower edge of described content sidewall is provided with the 3rd annular recesses (111) matching with described the 3rd annular flange flange (123).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420078861.7U CN203741453U (en) | 2014-02-24 | 2014-02-24 | Single crystal silicon thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420078861.7U CN203741453U (en) | 2014-02-24 | 2014-02-24 | Single crystal silicon thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203741453U true CN203741453U (en) | 2014-07-30 |
Family
ID=51341274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420078861.7U Expired - Fee Related CN203741453U (en) | 2014-02-24 | 2014-02-24 | Single crystal silicon thermal field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203741453U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521616A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Single crystal furnace quartz guide cylinder |
| CN107761162A (en) * | 2017-10-31 | 2018-03-06 | 扬中市惠丰包装有限公司 | One kind is used for czochralski crystal growing furnace electricity-saving type heat shield structure |
-
2014
- 2014-02-24 CN CN201420078861.7U patent/CN203741453U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521616A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Single crystal furnace quartz guide cylinder |
| CN107761162A (en) * | 2017-10-31 | 2018-03-06 | 扬中市惠丰包装有限公司 | One kind is used for czochralski crystal growing furnace electricity-saving type heat shield structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203741453U (en) | Single crystal silicon thermal field | |
| CN103074682B (en) | A kind of melt technique of manufacture order crystal silicon | |
| CN102732947B (en) | Ingot thermal field for growing pure quasi-monocrystalline | |
| CN210065531U (en) | Mold capable of enabling fused quartz crucible to have seeding function | |
| CN206486622U (en) | A kind of device that G7 polycrystal silicon ingots are cast for GT polycrystalline furnaces | |
| CN104790025A (en) | Preparation device and preparation technology for magnesium fluoride single crystal coating material | |
| CN202671707U (en) | Secondary feeding device for vertical pulling silicon monocrystal | |
| CN202658266U (en) | Heating coil for controlling 4-inch zone-melting monocrystalline silicon | |
| CN203715791U (en) | Monocrystal furnace capable of reducing oxygen content on head part of monocrystal silicon crystal bar | |
| CN202898592U (en) | Guide cylinder for single crystal furnaces | |
| CN102560625A (en) | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal | |
| CN202658263U (en) | Heating coil for controlling 6-inch zone-melting monocrystalline silicon | |
| CN202717873U (en) | Flow guide cylinder used for drawing large diameter semiconductor grade monocrystalline silicon rod | |
| CN205241851U (en) | Single crystal furnace heating system | |
| CN202658262U (en) | Heating coil for drawing five-inch zone-melting single crystal silicon | |
| CN202164374U (en) | Split type heat insulation cage used for cast ingot furnace | |
| CN202039155U (en) | Graphite crucible | |
| CN203360262U (en) | Continuous melting furnace for producing elliptical quartz tubes | |
| CN205917343U (en) | But split VGF growth of single crystal crucible zhonghuan | |
| CN204455351U (en) | A kind of czochralski crystal growing furnace | |
| CN203613301U (en) | Draft tube for drawing major-diameter N-shaped single crystal | |
| CN102719898B (en) | A kind of assembly type high-temperature crucible | |
| CN201924100U (en) | Silicon single crystal growth furnace with gas cold trap | |
| CN202297854U (en) | Graphite heat field deflecting hood of Czochralski single crystal furnace | |
| CN101949057A (en) | Thermal field of czochralski silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140730 Termination date: 20180224 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |