CN101949057A - Thermal field of czochralski silicon - Google Patents
Thermal field of czochralski silicon Download PDFInfo
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- CN101949057A CN101949057A CN 201010288250 CN201010288250A CN101949057A CN 101949057 A CN101949057 A CN 101949057A CN 201010288250 CN201010288250 CN 201010288250 CN 201010288250 A CN201010288250 A CN 201010288250A CN 101949057 A CN101949057 A CN 101949057A
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- heater
- furnace body
- insulated tank
- quartz crucible
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Abstract
The invention discloses a thermal field of czochralski silicon. The thermal field comprises a furnace body, and a quartz crucible and a heater which are arranged in the furnace body, wherein a through hole is formed on the lower part of the side wall of the furnace body, and an argon inlet is formed on the top of the furnace body; a furnace base plate is arranged at the bottom of the furnace body, an insulating barrel is arranged above the furnace base plate, and a thermal insulation material is wrapped outside the insulating barrel; and the top of the insulating barrel is provided with an big annular cover, an inner ring of the big cover is fixedly provided with a guide cylinder which is positioned on the upper part of the quartz crucible, and the upper part of the insulating barrel is provided with an inward reducing pipe. The thermal field effectively reduces the energy loss of a thermal system and reduces the heating power of the heater so as to achieve the effect of energy conservation. The thermal field increases the flow velocity of argon to a certain extent, takes heat radiated by a crystal away in time, increases the cooling rate of a single crystal, and effectively increases the growth casting speed of the single crystal. The thermal field effectively reduces pollution of impurities in the atmosphere on the growing environment of the single crystal, so that crystal forming rate is improved.
Description
Technical field
The present invention relates to a kind of thermal field of silicon monocrystal growth, especially a kind of czochralski silicon monocrystal thermal field.
Background technology
Sun power be clean most future, the safe and reliable energy, developed country plans the development and use of sun power as the energy revolution main contents for a long time, photovoltaic industry is through the development of recent years, verified, monocrystaline silicon solar cell is one of human most important green energy resource from now on.The silicon single-crystal of high-quality parameter is a primary condition of manufacturing high efficiency solar cell.
Silicon single crystal adopts czochralski process production more: polycrystalline silicon raw material is put into quartz crucible, heat fused.Adjust the zero pour of temperature to silicon, seed crystal (seed of crystal growth) is contacted with molten silicon, controlled temperature and pulling rate (speed that seed crystal upwards lifts) make molten silicon grow up to aimed dia from seed crystal, improve pulling rate and make crystal keep the equal diameter growth.When the molten silicon in the crucible runs low, adjust temperature and pulling rate, crystal diameter is dwindled gradually, until becoming taper.Promote crystal at last and make it to break away from fusion silicon liquid level, finish crystal growing process one time.
The existing thermal field structure that is used for pulling of silicon single crystal comprises quartz crucible and the well heater that is provided with in body of heater, the body of heater; The sidewall of the furnace body bottom is provided with through hole, and this through hole is communicated with pump-line, and pump-line is connected with pump, the top of body of heater is connected with the argon gas e Foerderanlage, the bottom of body of heater is provided with furnace hearth plate, and insulated tank is installed above the furnace hearth plate, and the described insulated tank outside is enclosed with lagging material; Be provided with the big lid of annular at the top of insulated tank, on the interior ring of big lid, be connected with the guide shell that is positioned at quartz crucible top.The thermal field of this structure in use, argon gas enters thermal field from the top, under the suction of pump, argon gas passes through thermal field from top to down, discharges after entering pump-line and pump; The argon gas stream of thermal field of flowing through can be carried discharge with a large amount of volatile matters long-living in the monocrystalline silicon growing process.
The thermal field inside of this structure is to wait gauge structure up and down, well heater is very serious to the guide shell baking, influenced distributing of monocrystalline latent heat to a great extent, thereby the heat that causes monocrystalline to produce in process of growth can not be taken away timely, if metamorphism can occur when pulling rate is higher, the monocrystalline rib that breaks be may cause simultaneously, output, yield rate influenced.Though the technology that has pair thermal field structure to change in the existing technology, the thermal field structure as number of patent application 200820028427.2 just provides a kind of czochralski silicon monocrystal to grow also exists the problems referred to above.
Summary of the invention
The technical problem to be solved in the present invention provides the higher czochralski silicon monocrystal thermal field of a kind of pulling rate.
For solving the problems of the technologies described above, the technical solution used in the present invention is: it comprises quartz crucible and the well heater that is provided with in body of heater, the body of heater; The sidewall of the furnace body bottom is provided with through hole, and the top of body of heater has the argon gas import; The bottom of body of heater is provided with furnace hearth plate, and insulated tank is installed above the furnace hearth plate, and the described insulated tank outside is enclosed with lagging material; Be provided with the big lid of annular at the top of insulated tank, be installed with the guide shell that is positioned at quartz crucible top on the interior ring of big lid, the top of described insulated tank is provided with inside reducing.
Further, the reducing on the described insulated tank is positioned at the top of well heater, and leaves the space between reducing and the well heater.
Further, described guide shell is the reverse frustoconic tube, is provided with annular protrusion in the middle and lower part of reverse frustoconic drum outer wall.
Adopt the beneficial effect that technique scheme produced to be: the present invention reduces the influence of well heater to monocrystalline latent heat by the heat radiation screening of insulated tank reducing with well heater; Changed the glide path of argon gas, made argon gas no longer directly blow to well heater, effectively reduced the energy waste of hot system, the heating power of reduction well heater, thereby reach energy-conservation effect.
The present invention is by the insulated tank reducing, ar gas passage between insulated tank and guide shell and the well heater is diminished, increased the flow velocity of argon gas to a certain extent, the heat that crystal is distributed is pulled away timely, increase the speed of cooling of monocrystalline, effectively raised the single crystal growing pulling rate.
The present invention is by the insulated tank reducing, and argon gas passes through in less relatively thermal field space, and the more abundant volatile matter that produces in the single crystal growth process of taking away effectively reduces in the atmosphere impurity to the pollution of single crystal growing environment, thereby improves crystal forming rate.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the structural representation of prior art thermal field.
Embodiment
Shown in Figure 1, this czochralski silicon monocrystal thermal field comprises quartz crucible 12 and the well heater 11 that is provided with in body of heater 3, the body of heater 3.Quartz crucible 12 is three lobe crucibles, is positioned at the middle part of body of heater 3; Be fixedly connected with crucible bar 7 at the bottom of the crucible of quartz crucible 12, crucible bar 7 stretches out the furnace hearth plate 9 of bottom of furnace body downwards; On furnace hearth plate 9, be provided with the crucible bar sheath 8 that is used to protect crucible bar 7.Shown in Figure 1, this thermal field is provided with the electrode column 6 that connects power supply on furnace hearth plate 9, be coated with quartz sheath and the electrode sheath that is used for guard electrode post 6 in the outside of electrode column 6; The upper end of electrode column 6 is connected with the well heater 11 of tubular, and well heater 11 is trapped among quartz crucible 12 wherein, thereby can realize all sides of quartz crucible 12 and the heating of side lower part.
Shown in Figure 1, insulated tank 5 is installed above this thermal field furnace hearth plate 9, insulated tank 5 is trapped among quartz crucible 12, electrode column 6 and well heater 11 wherein, and leaves the space between insulated tank 5 and the well heater 11.Be provided with the lagging material 4 in the parcel insulated tank outside between insulated tank 5 and body of heater 3, be provided with the through hole 10 that runs through sidewall of the furnace body, lagging material 4 and insulated tank 5 in body of heater 3 lower sidewall, this through hole 10 is communicated with pump-line, and pump-line is connected with pump.
Shown in Figure 1, insulated tank 4 upper inside wall of this thermal field are provided with reducing 14, and the internal diameter at reducing 14 places is promptly compared with the insulated tank 4 of existing structure thermal field shown in Figure 2 less than the internal diameter of its underpart, has dwindled the internal diameter of insulated tank middle and upper part.Shown in Figure 1, this reducing 14 leaves the space between the top of well heater 11 and reducing and well heater; The internal diameter size at reducing 14 places is between well heater 11 internal diameters and quartz crucible external diameter.
Shown in Figure 1, this has the big lid 2 of annular to this thermal field on insulated tank 4, covers 2 interior ring greatly and puts on the shelf and be provided with guide shell 15.The described guide shell 15 of this thermal field is to improve to form on the basis of the guide shell 15 of prior art shown in Figure 2, and shown in Figure 2, the guide shell 15 of prior art is the reverse frustoconic tube, and its lower end extend in the quartz crucible 12.Shown in Figure 1, the guide shell 15 of this thermal field is the projection 13 that is provided with a loop in the middle and lower part of drum outer wall; The purpose that this projection 13 is set is in order to reduce space between guide shell 15 and the quartz crucible 12, thereby better shield the baking of monocrystalline in 11 pairs of quartz crucibles of well heater 12, can make and generate monocrystalline and cool off annealing rapidly, improve monocrystalline normal growth speed, shorten growth cycle, promote that resistivity is more even, promote the monocrystalline interior quality.Shown in Figure 1, be provided with argon gas import 1 at the body of heater top on guide shell 15 tops.
The working process of this thermal field is: the through hole of body of heater 3 lower sidewall is communicated with the pipeline of finding time, and the pipeline of finding time is connected with mechanical pump, and the argon gas import 1 at body of heater 3 tops is communicated with the argon gas e Foerderanlage.The raw material polysilicon is put into quartz crucible 12, and electrode column 6 is connected power supply; Well heater 11 sends heat energy and gives quartz crucible 12 heating, and the thermal field temperature inside constantly raises, and when temperature reached the fusing point of silicon, the unmelted polycrystalline silicon in the quartz crucible 12 became fused solution.Open the argon gas e Foerderanlage argon gas is sent into thermal field, open mechanical pump simultaneously, make argon gas successively by space between space, insulated tank reducing 14 and the well heater 11 between guide shell 15, quartz crucible 12, quartz crucible 12 and the guide shell 15 and the space between insulated tank 5 and the well heater 11, discharge from through hole 10 at last, enter find time pipeline and mechanical pump.
A among the glide path of the formation of argon gas in thermal field such as Fig. 1 in this thermal field
1Shown in; A among the glide path of the formation of argon gas in thermal field such as Fig. 2 in the prior art
2Shown in; By A
1And A
2As can be seen, the space of argon gas circulation obviously reduces, and makes argon gas can more fully take away the volatile matter that produces in the single crystal growth process, effectively reduces in the atmosphere impurity to the pollution of single crystal growing environment, thereby improves crystal forming rate.
Claims (3)
1. czochralski silicon monocrystal thermal field, it comprises quartz crucible and the well heater that is provided with in body of heater, the body of heater; The sidewall of the furnace body bottom is provided with through hole, and the top of body of heater has the argon gas import; The bottom of body of heater is provided with furnace hearth plate, and insulated tank is installed above the furnace hearth plate, and the described insulated tank outside is enclosed with lagging material; Be provided with the big lid of annular at the top of insulated tank, be installed with the guide shell that is positioned at quartz crucible top on the interior ring of big lid, it is characterized in that: the top of described insulated tank is provided with inside reducing.
2. czochralski silicon monocrystal thermal field according to claim 1 is characterized in that: the reducing on the described insulated tank is positioned at the top of well heater, and leaves the space between reducing and the well heater.
3. czochralski silicon monocrystal thermal field according to claim 1 and 2 is characterized in that: described guide shell is the reverse frustoconic tube, is provided with annular protrusion in the middle and lower part of reverse frustoconic drum outer wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010288250 CN101949057A (en) | 2010-09-20 | 2010-09-20 | Thermal field of czochralski silicon |
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| CN 201010288250 CN101949057A (en) | 2010-09-20 | 2010-09-20 | Thermal field of czochralski silicon |
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| CN101949057A true CN101949057A (en) | 2011-01-19 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630886A (en) * | 2015-02-09 | 2015-05-20 | 洛阳巨子新能源科技有限公司 | Crystalline silicon growth device |
| CN108425149A (en) * | 2018-04-13 | 2018-08-21 | 内蒙古中环光伏材料有限公司 | A kind of full nitrogen silicon single crystal crystal pulling device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH092892A (en) * | 1995-06-22 | 1997-01-07 | Komatsu Electron Metals Co Ltd | Pull up apparatus for semiconductor single crystal |
| US20070119365A1 (en) * | 2004-01-30 | 2007-05-31 | Sumco Corporation | Silicon single crystal pulling method |
| CN201162060Y (en) * | 2008-03-03 | 2008-12-10 | 西安隆基硅材料有限公司 | Thermal field structure for vertical pulling silicon monocrystal growth |
| CN101709505A (en) * | 2009-11-11 | 2010-05-19 | 西安隆基硅材料股份有限公司 | Energy-saving thermal field for growing silicon single crystal |
| CN101798704A (en) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field |
-
2010
- 2010-09-20 CN CN 201010288250 patent/CN101949057A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH092892A (en) * | 1995-06-22 | 1997-01-07 | Komatsu Electron Metals Co Ltd | Pull up apparatus for semiconductor single crystal |
| US20070119365A1 (en) * | 2004-01-30 | 2007-05-31 | Sumco Corporation | Silicon single crystal pulling method |
| CN201162060Y (en) * | 2008-03-03 | 2008-12-10 | 西安隆基硅材料有限公司 | Thermal field structure for vertical pulling silicon monocrystal growth |
| CN101709505A (en) * | 2009-11-11 | 2010-05-19 | 西安隆基硅材料股份有限公司 | Energy-saving thermal field for growing silicon single crystal |
| CN101798704A (en) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630886A (en) * | 2015-02-09 | 2015-05-20 | 洛阳巨子新能源科技有限公司 | Crystalline silicon growth device |
| CN108425149A (en) * | 2018-04-13 | 2018-08-21 | 内蒙古中环光伏材料有限公司 | A kind of full nitrogen silicon single crystal crystal pulling device |
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Application publication date: 20110119 |