CN202585403U - Full-bridge single-tube IGBT packaging module - Google Patents
Full-bridge single-tube IGBT packaging module Download PDFInfo
- Publication number
- CN202585403U CN202585403U CN 201220078319 CN201220078319U CN202585403U CN 202585403 U CN202585403 U CN 202585403U CN 201220078319 CN201220078319 CN 201220078319 CN 201220078319 U CN201220078319 U CN 201220078319U CN 202585403 U CN202585403 U CN 202585403U
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- Prior art keywords
- igbt
- single tube
- tube igbt
- module
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The utility model relates to a full-bridge single-tube IGBT packaging module. The IGBT packaging module comprises an oxygen-free copper heat-conducting substrate, a heat-conducting ceramic chip, and a plurality of single-tube IGBTs, wherein the heat-conducting ceramic chip is fixed on the oxygen-free copper heat-conducting substrate by evenly smearing solder paste on the heat-conducting ceramic chip, and the plurality of single-tube IGBTs are respectively fixed on the heat-conducting ceramic chip by evenly smearing the solder paste on the plurality of single-tube IGBTs. The IGBT packaging module of the utility model is equipped with the heat-conducting ceramic chip, which can improve heat-radiation conditions in the working process of the IGBT module, effectively solves the problem that temperature rise is too high when the IGBT module works at large power, and improves the working efficiency and service life of the IGBT module; the IGBT packaging module is equipped with a dustproof cover, which can effectively prevent dusts and liquid drops from entering the IGBT packaging module and prevent happening of electric leakage events in the using process, and simultaneously optimizes the external structure of the IGBT packaging module and makes the appearance of the IGBT packaging module more concise; and according to the utility model, the production cost of the whole IGBT module product is decreased, and the damage rate of the IGBT module in the using process is also decreased.
Description
Technical field
The utility model relates to a kind of package module, is specifically related to a kind of single tube IGBT encapsulation full-bridge module.
Background technology
Insulated gate bipolar transistor, Insulated Gate Bipolar Transistor is called for short IGBT.
Employed IGBT full-bridge circuit form can be divided into following type in the inverter type welder field at present: 1, two half-bridge IGBT module groups become full-bridge; 2, special-purpose full-bridge encapsulates IGBT; 3, the IGBT single tube adds pcb board set group through the insulating heat-conductive film.
1, two half-bridge IGBT module groups become full-bridge and special-purpose full-bridge encapsulation IGBT: the employed conventional I GBT module of inverter type welder needs two half-bridge modules composition full-bridges to carry out work at present; The increase of module usage quantity has correspondingly improved production cost of products; Brilliant first bottom area of traditional I GBT module has determined the less area of dissipation of module itself, so that can not well dispel the heat.When using traditional I GBT module; Owing to do not have any antistatic protection measure at the wiring two ends of module; When the welding drive wire, be easy to take place to puncture and the damage module; So generally, the user in use also needs the strict anti-static precautions of carrying out, and is not punctured with protection module.
2, the IGBT single tube adds pcb board set group through insulation heat-conducting glue sheet: the employed IGBT single tube in welding machine field adds pcb board set group through insulation heat-conducting glue sheet at present; Need in the use bottom the IGBT pipe, to fill up and add one deck insulating heat-conductive silica gel sheet; Because the less conductive coefficient of insulating heat-conductive silica gel sheet; Be merely 0.8w/m*k--4.5w/m*k; Cause the IGBT pipe in use to exist certain heat conduction defective, thereby influence IGBT pipe radiating effect in the course of the work, and then influence its operating efficiency.The heat-conducting cream of smearing on the insulating heat-conductive silica gel sheet simultaneously dry and cracked situation can occur after using certain hour, thereby influences the normal heat radiation of IGBT pipe.
In view of the above problems, the utility model discloses a kind of single tube IGBT encapsulation full-bridge module.It has technical characterictic as mentioned below, to solve existing problem.
The utility model content
The purpose of the utility model provides a kind of only the pipe IGBT encapsulation full-bridge module, the radiating condition when it can improve the work of IGBT module, the operating efficiency and the useful life of improving the IGBT module.
The purpose of the utility model single tube IGBT encapsulation full-bridge module and method for packing thereof realizes through following technical scheme: a kind of single tube IGBT encapsulation full-bridge module comprises oxygen-free copper heat-conducting substrate, thermal conductive ceramic plate and a plurality of single tube IGBT; Described thermal conductive ceramic plate is fixed on the oxygen-free copper heat-conducting substrate through the solder(ing) paste of evenly smearing; Described a plurality of single tube IGBT is separately fixed on the thermal conductive ceramic plate through the solder(ing) paste of evenly smearing.
Above-mentioned single tube IGBT encapsulation full-bridge module, wherein, the solder(ing) paste thickness of evenly smearing on the described oxygen-free copper heat-conducting substrate is 0.3mm, the solder(ing) paste thickness of evenly smearing on the described thermal conductive ceramic plate is 0.3mm.
Above-mentioned single tube IGBT encapsulation full-bridge module wherein, also comprises a wiring board, and described wiring board is provided with centre bore, a plurality of installing hole, a plurality of pin hole and a plurality of resistance.
The position of described a plurality of installing holes is corresponding with the position of described a plurality of single tube IGBT respectively; Described a plurality of single tube IGBT is connected with described wiring board through described a plurality of installing holes respectively; And fix through scolding tin, make the top of a plurality of single tube IGBT be positioned at the below of wiring board.
Described centre bore is positioned at the central authorities of described a plurality of installing holes, and described a plurality of installing hole is all different with the distance of described centre bore; Described a plurality of pin hole is separately positioned on the two ends of wiring board, is used to connect the pin of described a plurality of single tube IGBT; Described a plurality of resistance is separately positioned on the edges at two ends of described wiring board, is positioned at the outside of described a plurality of pin hole, and described a plurality of resistance respectively with the adjacent corresponding connection of a plurality of single tube IGBT.
Above-mentioned single tube IGBT encapsulation full-bridge module, wherein, on described wiring board, the inboard of described a plurality of pin hole also identifies the identifier of " YELLOW ", " RED ".
Above-mentioned single tube IGBT encapsulation full-bridge module, wherein, the width of described wiring board is less than the width of oxygen-free copper heat-conducting substrate.
Above-mentioned single tube IGBT encapsulation full-bridge module; Wherein, Also comprise a dust cover, described dust cover and described oxygen-free copper heat-conducting substrate and wiring board are suitable, and the top of described dust cover is provided with a plurality of transistor positioning through hole and a plurality of pin connecting through hole; Described a plurality of pin connecting through hole is separately positioned on the both sides of transistor positioning through hole, is positioned at the two ends of said dust cover; The top of described a plurality of single tube IGBT is inserted in respectively in described a plurality of transistor positioning through hole, and the pin of described a plurality of single tube IGBT is inserted in respectively in described a plurality of pin connecting through hole.
The utility model single tube IGBT encapsulation full-bridge module and method for packing thereof make it compared with prior art owing to adopted such scheme, have following advantage and good effect:
1, the utility model single tube IGBT encapsulation full-bridge module and method for packing thereof are owing to be provided with high-performance thermal conductive ceramic plate 20W/m*k-30W/m*k; Radiating condition in the time of improving the work of IGBT module; Effectively reduce IGBT module too high problem of temperature rise under high power work, improve the operating efficiency and the useful life of IGBT module.
2, the utility model single tube IGBT encapsulation full-bridge module and method for packing thereof are owing to be provided with dust cover; Can in use effectively prevent the entering of dust, drop and the generation of electric leakage thing; Optimized the external structure of module simultaneously, made its outward appearance more succinct, generous.
3, the utility model single tube IGBT encapsulation full-bridge module and method for packing thereof can reduce the production cost of entire I GBT module product, and reduce the spoilage of IGBT module in the use.
Below; To do further explanation through concrete embodiment; Yet embodiment only is giving an example of the optional execution mode of the utility model, and its disclosed characteristic only is used to explain and set forth the technical scheme of the utility model, and is not used in the protection range that limits the utility model.
Description of drawings
In order better to understand the utility model, the accompanying drawing for your guidance that can quote with reference to this specification, in the accompanying drawing:
Fig. 1 is the structural representation of the oxygen-free copper heat-conducting substrate of the utility model single tube IGBT encapsulation full-bridge module.
Fig. 2 is the structural representation of the wiring board of the utility model single tube IGBT encapsulation full-bridge module.
Fig. 3 is the structural representation of the dust cover of the utility model single tube IGBT encapsulation full-bridge module.
Embodiment
According to the claim and the disclosed content of utility model content of the utility model, the technical scheme of the utility model is specific as follows said.
See also shown in the accompanying drawing 1; The utility model single tube IGBT encapsulation full-bridge module comprises oxygen-free copper heat-conducting substrate 1, thermal conductive ceramic plate (not shown) and a plurality of single tube IGBT2; Described thermal conductive ceramic plate is fixed on the oxygen-free copper heat-conducting substrate 1 through solder(ing) paste, and the solder(ing) paste thickness of evenly smearing on the described oxygen-free copper heat-conducting substrate 1 is approximately 0.3mm; Described a plurality of single tube IGBT2 is separately fixed on the thermal conductive ceramic plate through solder(ing) paste, and the solder(ing) paste thickness of evenly smearing on the described thermal conductive ceramic plate is approximately 0.3mm.
See also shown in the accompanying drawing 2, also comprise a wiring board 3, described wiring board 3 is provided with centre bore 31, a plurality of installing hole 32, a plurality of pin hole 33 and a plurality of resistance 34; The position of described a plurality of installing hole 32 is corresponding with the position of described a plurality of single tube IGBT2 respectively; Described a plurality of single tube IGBT 2 is connected with described wiring board 3 through described a plurality of installing holes 32 respectively; And fix through scolding tin, make the top of a plurality of single tube IGBT2 be positioned at the top of wiring board 3; Described centre bore 31 is positioned at the central authorities of described a plurality of installing hole 32, and described a plurality of installing hole 32 is all different with the distance of described centre bore 31, prevents in installation process, and module direction dress is anti-; Described a plurality of pin hole 33 is separately positioned on the two ends of wiring board 3, is used to connect the pin of described a plurality of single tube IGBT2; Described a plurality of resistance 34 is separately positioned on the edges at two ends of described wiring board 3; Be positioned at the outside of described a plurality of pin hole 33; And described a plurality of resistance 34 respectively with the adjacent corresponding connection of a plurality of single tube IGBT2; The use of resistance 34 prevents in the process of welding drive wire because misoperation with single tube IGBT2 puncture, causes artificial damage.
On described wiring board 3, the inboard of described a plurality of pin hole 33 also identifies the identifier of " YELLOW ", " RED ", the identification of drive wire color when being convenient to wiring.The width of wiring board 3 is less than the width of oxygen-free copper heat-conducting substrate 1.
See also shown in the accompanying drawing 3; Also comprise a dust cover 4; Described dust cover 4 is suitable with described oxygen-free copper heat-conducting substrate 1 and wiring board 3; And the top of described dust cover 4 is provided with a plurality of transistor positioning through hole 41 and a plurality of pin connecting through hole 42, and described a plurality of pin connecting through holes 42 are separately positioned on the both sides of transistor positioning through hole 41, is positioned at the two ends of described dust cover 4; The top of described a plurality of single tube IGBT2 is inserted in respectively in described a plurality of transistor positioning through hole 41, and the pin of described a plurality of single tube IGBT2 is inserted in respectively in described a plurality of pin connecting through hole 42.
In sum; The utility model single tube IGBT encapsulation full-bridge module is owing to be provided with thermal conductive ceramic plate; Radiating condition in the time of improving the work of IGBT module effectively reduces IGBT module too high problem of temperature rise under high power work, improves the operating efficiency and the useful life of IGBT module; The utility model can in use can effectively prevent the entering of dust, drop and the generation of electric leakage thing owing to be provided with dust cover, has optimized the external structure of module simultaneously, makes its outward appearance more succinct, generous; The utility model can reduce the production cost of entire I GBT module product, and reduces the spoilage of IGBT module in the use.
Foregoing is the enumerating of specific embodiment of the utility model single tube IGBT encapsulation full-bridge module, for the wherein not equipment of detailed description and structure, is to be understood that to taking existing common apparatus in this area and universal method to implement.
Claims (5)
1. a single tube IGBT encapsulation full-bridge module is characterized in that: comprise oxygen-free copper heat-conducting substrate, thermal conductive ceramic plate and a plurality of single tube IGBT; Described thermal conductive ceramic plate is fixed on the oxygen-free copper heat-conducting substrate through the solder(ing) paste of evenly smearing; Described a plurality of single tube IGBT is separately fixed on the thermal conductive ceramic plate through the solder(ing) paste of evenly smearing.
2. single tube IGBT encapsulation full-bridge module according to claim 1, it is characterized in that: the solder(ing) paste thickness of evenly smearing on the described oxygen-free copper heat-conducting substrate is 0.3mm, the solder(ing) paste thickness of evenly smearing on the described thermal conductive ceramic plate is 0.3mm.
3. single tube IGBT encapsulation full-bridge module according to claim 1, it is characterized in that: also comprise a wiring board, described wiring board is provided with centre bore, a plurality of installing hole, a plurality of pin hole and a plurality of resistance;
The position of described a plurality of installing holes is corresponding with the position of described a plurality of single tube IGBT respectively; Described a plurality of single tube IGBT is connected with described wiring board through described a plurality of installing holes respectively; And fix through scolding tin, make the top of a plurality of single tube IGBT be positioned at the below of wiring board;
Described centre bore is positioned at the central authorities of described a plurality of installing holes, and described a plurality of installing hole is all different with the distance of described centre bore; Described a plurality of pin hole is separately positioned on the two ends of wiring board, is used to connect the pin of described a plurality of single tube IGBT; Described a plurality of resistance is separately positioned on the edges at two ends of described wiring board, is positioned at the outside of described a plurality of pin hole, and described a plurality of resistance respectively with the adjacent corresponding connection of a plurality of single tube IGBT.
4. according to claim 1 or 3 described single tube IGBT encapsulation full-bridge modules, it is characterized in that: the width of described wiring board is less than the width of oxygen-free copper heat-conducting substrate.
5. according to claim 1 or 3 described single tube IGBT encapsulation full-bridge modules; It is characterized in that: also comprise a dust cover; Described dust cover and described oxygen-free copper heat-conducting substrate and wiring board are suitable; And the top of described dust cover is provided with a plurality of transistor positioning through hole and a plurality of pin connecting through hole, and described a plurality of pin connecting through holes are separately positioned on the both sides of transistor positioning through hole, is positioned at the two ends of said dust cover; The top of described a plurality of single tube IGBT is inserted in respectively in described a plurality of transistor positioning through hole, and the pin of described a plurality of single tube IGBT is inserted in respectively in described a plurality of pin connecting through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220078319 CN202585403U (en) | 2012-03-05 | 2012-03-05 | Full-bridge single-tube IGBT packaging module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220078319 CN202585403U (en) | 2012-03-05 | 2012-03-05 | Full-bridge single-tube IGBT packaging module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202585403U true CN202585403U (en) | 2012-12-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220078319 Withdrawn - After Issue CN202585403U (en) | 2012-03-05 | 2012-03-05 | Full-bridge single-tube IGBT packaging module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202585403U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035590A (en) * | 2012-12-25 | 2013-04-10 | 浙江大学 | Insulated gate bipolar translator (IGBT) power module |
| CN103295980A (en) * | 2012-03-05 | 2013-09-11 | 上海沪通企业集团有限公司 | Single tube IGBT encapsulation full-bridge module and encapsulation method thereof |
| CN115763396A (en) * | 2022-11-03 | 2023-03-07 | 江苏东海半导体股份有限公司 | Anti-static IGBT module |
-
2012
- 2012-03-05 CN CN 201220078319 patent/CN202585403U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295980A (en) * | 2012-03-05 | 2013-09-11 | 上海沪通企业集团有限公司 | Single tube IGBT encapsulation full-bridge module and encapsulation method thereof |
| CN103295980B (en) * | 2012-03-05 | 2016-01-13 | 上海沪通企业集团有限公司 | Single tube IGBT encapsulates full-bridge modules and method for packing thereof |
| CN103035590A (en) * | 2012-12-25 | 2013-04-10 | 浙江大学 | Insulated gate bipolar translator (IGBT) power module |
| CN115763396A (en) * | 2022-11-03 | 2023-03-07 | 江苏东海半导体股份有限公司 | Anti-static IGBT module |
| CN115763396B (en) * | 2022-11-03 | 2024-02-02 | 江苏东海半导体股份有限公司 | Antistatic IGBT module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121205 Effective date of abandoning: 20160113 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |