CN202499930U - Heater for making silicon single crystal using Czochralski method - Google Patents
Heater for making silicon single crystal using Czochralski method Download PDFInfo
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- CN202499930U CN202499930U CN2011203828010U CN201120382801U CN202499930U CN 202499930 U CN202499930 U CN 202499930U CN 2011203828010 U CN2011203828010 U CN 2011203828010U CN 201120382801 U CN201120382801 U CN 201120382801U CN 202499930 U CN202499930 U CN 202499930U
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Abstract
The utility model relates to a heater for making silicon single crystals using Czochralski method, and is characterized in that the heater includes a plurality of first heating plates (1), a plurality of second heating plates (2) and a plurality of connection plates (3). The vertical directions of the first heating plates and the second heating plates are respectively provided with plugs (6) and slots (7). The upper and the lower end faces of the connection plate are respectively provided with a pair of plugs I (8). The heater also includes connection covers (4) and fixed elbows (5). According to the utility model, a conventional integrated-type heater is disassembled into a plurality of heating plates, which are then spliced and combined into the heater. The heater not only achieves the same function with the integrated heater, but also helps to make the raw material volume decrease greatly and reduce the difficulty of material selection.
Description
Technical field
The utility model relates to a kind of heater structure, relates in particular to the heater structure that a kind of vertical pulling method is made silicon single-crystal.
Background technology
At present monocrystalline thermal field institute uses the well heater major part as one, mainly is the outside electric current that feeds, and plays the effect of heat temperature raising, raw material is melted, and temperature in the constant single crystal growing furnace.Along with continuing to increase of monocrystalline thermal field, 18 cun-20 cun-22 cun, in addition bigger; It is big that well heater also becomes thereupon, so the size of required graphite raw material must be greater than the size that will process well heater, starting material just have significant limitation like this; And now because market clout import isostatic pressing formed graphite material is more and more nervous; Can provide the material quantity of processing well heater limited, cause the well heater price high, the process-cycle is than problems such as length.And in case a certain position of well heater occurs unusual (like fracture), whole well heater will be scrapped, and this has just caused very big waste.
Summary of the invention
The purpose of the utility model is to overcome above-mentioned deficiency, and the well heater of the assembly type vertical pulling method making silicon single-crystal of a kind of province material material-saving is provided, and reduces maintenance cost.
The purpose of the utility model is achieved in that a kind of well heater of vertical pulling method making silicon single-crystal; It comprises some first hot-plates, some second hot-plates and some web plates; On the vertical direction of said first hot-plate and second hot-plate, be respectively arranged with plug and slot; Oppositely be provided with about the plug on said first hot-plate and second hot-plate, slot; Said web plate is a circular arc wide plate, is respectively arranged with a pair of plug I at the upper and lower end face of said web plate, and a pair of plug I of said web plate upper surface matches with the slot of first hot-plate and second hot-plate respectively.
Said well heater also comprises adapter sleeve and fixing elbow; Said adapter sleeve be provided with first hot-plate and second hot-plate on the slot I that matches of plug; The vertical edge of said fixedly elbow is provided with the slot II that matches with the plug I of web plate lower surface, and the horizontal edge of said fixedly elbow is provided with fixed orifices.
Compared with prior art, the beneficial effect of the utility model is:
The utility model resolves into some hot-plates with traditional integral heater and is stitched together and is combined into well heater; Not only reach the function the same with integral heater; And make raw materials used volume significantly reduce, reduced the selection difficulty, simultaneously when well heater goes wrong; Only need to change certain contiguous block, reached the purpose that reduces cost.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Fig. 2 is the structural representation of first hot-plate of the utility model.
Fig. 3 is the structural representation of second hot-plate of the utility model.
Fig. 4 is the structural representation of the web plate of the utility model.
Fig. 5 is the structural representation of the adapter sleeve of the utility model.
Fig. 6 is the structural representation of the fixedly elbow of the utility model.
Wherein:
First hot-plate 1
Second hot-plate 2
Adapter sleeve 4
Fixedly elbow 5
Plug I 8
Slot I 9
Slot II 10
Fixed orifices 11.
Embodiment
Referring to Fig. 1-Fig. 6; The utility model relates to the well heater that a kind of vertical pulling method is made silicon single-crystal; Mainly form by six first hot-plates 1, six second hot-plates 2 and two web plates 3; On the vertical direction of said first hot-plate 1 and second hot-plate 2, be respectively arranged with plug 6 and slot 7, the plug 6 on said first hot-plate 1 and second hot-plate 2, slot about 7 oppositely are provided with, and said web plate 3 is a circular arc wide plate; Upper and lower end face at said web plate 3 is respectively arranged with a pair of plug I 8, and a pair of plug I 8 of said web plate 3 upper surfaces matches with the slot 7 of first hot-plate 1 and second hot-plate 2 respectively.
Said well heater also comprises adapter sleeve 4 and fixing elbow 5; Said adapter sleeve 4 be provided with first hot-plate 1 and second hot-plate 2 on the slot I 9 that matches of plug 6; The vertical edge of said fixedly elbow 5 is provided with the slot II 10 that matches with the plug I 8 of web plate 3 lower surfaces, and the horizontal edge of said fixedly elbow 5 is provided with fixed orifices 11.
Claims (1)
1. a vertical pulling method is made the well heater of silicon single-crystal; It is characterized in that it comprises some first hot-plates (1), some second hot-plates (2) and some web plates (3); On the vertical direction of said first hot-plate (1) and second hot-plate (2), be respectively arranged with plug (6) and slot (7); Oppositely be provided with about the plug (6) on said first hot-plate (1) and second hot-plate (2), slot (7); Upper and lower end face at said web plate (3) is respectively arranged with a pair of plug I (8); The a pair of plug I (8) of said web plate (3) upper surface matches with the slot (7) of first hot-plate (1) and second hot-plate (2) respectively; Said well heater also comprises adapter sleeve (4) and fixing elbow (5); Said adapter sleeve (4) be provided with first hot-plate (1) and second hot-plate (2) on the slot I (9) that matches of plug (6), the vertical edge of said fixedly elbow (5) is provided with the slot II (10) that matches with the plug I (8) of web plate (3) lower surface, the horizontal edge of said fixedly elbow (5) is provided with fixed orifices (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203828010U CN202499930U (en) | 2011-10-11 | 2011-10-11 | Heater for making silicon single crystal using Czochralski method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203828010U CN202499930U (en) | 2011-10-11 | 2011-10-11 | Heater for making silicon single crystal using Czochralski method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202499930U true CN202499930U (en) | 2012-10-24 |
Family
ID=47036550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203828010U Expired - Fee Related CN202499930U (en) | 2011-10-11 | 2011-10-11 | Heater for making silicon single crystal using Czochralski method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202499930U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103857074A (en) * | 2012-12-06 | 2014-06-11 | 新疆电力公司昌吉电业局 | Test instrument heating device |
| CN105140159A (en) * | 2015-09-30 | 2015-12-09 | 桂林斯壮微电子有限责任公司 | Heating block mother-son module unit of chip mounter |
| CN108848585A (en) * | 2018-08-14 | 2018-11-20 | 盐城市轩源加热设备科技有限公司 | A kind of cast copper heating plate being easy to splice installation |
| CN111847865A (en) * | 2020-07-13 | 2020-10-30 | 长飞光纤光缆股份有限公司 | Sleeve type graphite heater |
-
2011
- 2011-10-11 CN CN2011203828010U patent/CN202499930U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103857074A (en) * | 2012-12-06 | 2014-06-11 | 新疆电力公司昌吉电业局 | Test instrument heating device |
| CN105140159A (en) * | 2015-09-30 | 2015-12-09 | 桂林斯壮微电子有限责任公司 | Heating block mother-son module unit of chip mounter |
| CN108848585A (en) * | 2018-08-14 | 2018-11-20 | 盐城市轩源加热设备科技有限公司 | A kind of cast copper heating plate being easy to splice installation |
| CN111847865A (en) * | 2020-07-13 | 2020-10-30 | 长飞光纤光缆股份有限公司 | Sleeve type graphite heater |
| CN111847865B (en) * | 2020-07-13 | 2021-12-28 | 长飞光纤光缆股份有限公司 | Sleeve type graphite heater |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20180914 Granted publication date: 20121024 |
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| PD01 | Discharge of preservation of patent | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20210914 Granted publication date: 20121024 |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121024 Termination date: 20181011 |