CN204039545U - A kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen - Google Patents
A kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen Download PDFInfo
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- CN204039545U CN204039545U CN201420407297.9U CN201420407297U CN204039545U CN 204039545 U CN204039545 U CN 204039545U CN 201420407297 U CN201420407297 U CN 201420407297U CN 204039545 U CN204039545 U CN 204039545U
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- sapphire crystal
- growth furnace
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Abstract
The utility model discloses a kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen, described insulation side screen is in barrel-shaped, and described insulation side screen is all be spliced by the some pieces of identical arc Zirconium oxide fibre Slab element fissure of displacement.The insulation side screen that the utility model provides adopts the identical arc zirconium oxide fiber board fissure of displacement to be spliced, and thermal stresses is easy to release, and the thermal stresses that fiberboard bears reduces greatly; Every block fiberboard is all fixed on stainless steel outer barrel wall, adds insulation side screen stability, decreases the stress from top fiberboard of below suffered by fiberboard simultaneously, considerably increase the work-ing life of insulation side screen.
Description
Technical field
The utility model belongs to crystal growing furnace insulation screen field, side, particularly relates to a kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen.
Background technology
Sapphire crystal has uniqueness, excellent physical and chemical performance, its fusing point high (2054 DEG C), hardness is high, electrical insulating property good, good corrosion resistance, particularly in 0.2 ~ 5.0um wave band, there is good light transmission, therefore as important technology crystalline material, be widely used in a series of high-tech technical fields such as national defence, military affairs, scientific research, also widely apply in civilian industry, as LED illumination industry etc. simultaneously.
The growth method of sapphire crystal mainly contains three kinds: crystal pulling method, kyropoulos and temperature gradient method, and in these three kinds of methods, kyropoulos has the advantage of following three aspects: one is crystal diameter, and kyropoulos can grow large diameter crystal; Two is crystallographic directions, and kyropoulos has great advantage in the directive sapphire growth of large size; Three is crystal mass, and kyropoulos growing system has the optimum temperature gradation of applicable sapphire crystal growth.Crystal in process of growth or at the end of crystal do not contact with crucible, greatly reduce thermal stresses, high-quality macrocrystal can be obtained.Because kyropoulos contains above-mentioned advantage, so kyropoulos occupies most of share in sapphire production market.
The very important condition of of the sapphire crystal of growing high-quality is exactly to have an applicable temperature field, and the thermograde quality on crystal of the temperature distribution in growing system in other words in crystal, in melt and in solid-liquid interface has conclusive impact.In sapphire crystal growth process, the distribution in temperature field determines primarily of the factor such as flow of position in heating element of the structure of thermal insulation layer, crucible and heat-eliminating medium.Wherein change the position of crucible and the regulating effect of the flow of heat-eliminating medium to warm field is limited.And although the setting changing thermal insulation layer can reach ideal regulating effect, it is higher that it realizes difficulty.Heat needed for crystal growth is produced by heating element and is applied to vitellarium by the mode of radiation, therefore directly can produce thermograde by heating element, thus in growth furnace, form many warm areas.
High-temperature zone, middle warm area and three, cold zone warm area is there is in many warm areas, because the impact of three different warm areas, insulation side screen is heated uneven, thus produce more thermal stresses, therefore present insulation side screen will slight crack after using several, even break so that cannot re-use, having a strong impact on growth efficiency and the growth cost of sapphire crystal.
Utility model content
Utility model object: in order to overcome the deficiencies in the prior art, the utility model provides a kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen.
Technical scheme: for solving the problems of the technologies described above, a kind of sapphire crystal kyropoulos growth furnace that the utility model provides many warm area insulations side screen, described insulation side screen is in barrel-shaped, and described insulation side screen is all be spliced by the some pieces of identical arc Zirconium oxide fibre Slab element fissure of displacement.
Further, described arc zirconium oxide fiber board is provided with fixed orifices, and be fixed on stainless steel outer barrel wall by screw by fiberboard, fixed orifices diameter is determined by screw used.
Further, described insulation side screen is outer is provided with a stainless steel outer barrel wall.
Further, described zirconium oxide fiber board two ends are respectively equipped with an engagement part.
Further, described arc zirconium oxide fiber board internal diameter is 248mm, and thickness is 50mm, is highly 89mm.
Further, in order to fixing heating unit, top and the bottom of described insulation side screen are evenly provided with U-lag and lower U-lag on one group respectively, and described upper U-lag height is 93.5mm, and width is 32mm, and described lower U-lag height is 188.5mm, and width is 32mm.
Further, described insulation side screen is highly 712.5mm, and internal diameter is 248mm, and external diameter is 298mm.
Further, described insulation side screen is made up of 8 layers of zirconium oxide fiber board, and every layer of zirconium oxide fiber board is spliced by 12 pieces of Zirconium oxide fibre Slab element fissure of displacement.
Beneficial effect: the utility model in terms of existing technologies, possesses following advantage:
1) the insulation side screen that the utility model obtains adopts the identical arc zirconium oxide fiber board fissure of displacement to be spliced, and thermal stresses is easy to release, and the thermal stresses that fiberboard bears reduces greatly; Every block fiberboard is all fixed on stainless steel outer barrel wall, adds insulation side screen stability, decreases the stress from top fiberboard of below suffered by fiberboard simultaneously, considerably increase the work-ing life of insulation side screen.
2) the insulation side screen that the utility model obtains adopts the identical arc zirconium oxide fiber board fissure of displacement to be spliced, and certain block fiberboard can be changed separately after damaging, and without the need to being incubated side screen integral replacing, effectively reduces the production cost of sapphire crystal.
3) the insulation side screen that the utility model obtains adopts the identical arc zirconium oxide fiber board fissure of displacement to be spliced, and can replace conventional tungsten molybdenum shield, not need to add other lagging material again, reduce the volume of whole thermal field, reduce the pollution of whole thermal field simultaneously.
Accompanying drawing explanation
Fig. 1 is the utility model structural representation.
Fig. 2 is the utility model structure another side schematic diagram.
Fig. 3 is the utility model fiberboard modular construction schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1 to Figure 3, a kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen, be arranged between the stainless steel outer barrel of sapphire growth furnace and inside holding bucket, described insulation side screen is in barrel-shaped, and described insulation side screen 1 is all be spliced by the some pieces of identical arc Zirconium oxide fibre Slab element fissure of displacement.Described arc zirconium oxide fiber board is provided with fixed orifices 3, by screw, fiberboard is fixed on stainless steel outer barrel wall, described zirconium oxide fiber board two ends are respectively equipped with an engagement part 2, described arc zirconium oxide fiber board internal diameter is 248mm, thickness is 50mm, be highly 89mm, top and the bottom of described insulation side screen 1 are evenly provided with U-lag 4 and lower U-lag 5 on one group respectively, described upper U-lag 4 is highly 93.5mm, width is 32mm, described lower U-lag 5 is highly 188.5mm, width is 32mm, described insulation side screen 1 is highly 712.5mm, internal diameter is 248mm, external diameter is 298mm, described insulation side screen is made up of 8 layers of zirconium oxide fiber board, every layer of zirconium oxide fiber board is spliced by 12 pieces of Zirconium oxide fibre Slab element fissure of displacement.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.
Claims (10)
1. sapphire crystal kyropoulos growth furnace many warm area insulations side screen, is characterized in that: described insulation side screen is in barrel-shaped, and described insulation side screen is all be spliced by the some pieces of identical arc Zirconium oxide fibre Slab element fissure of displacement.
2. sapphire crystal kyropoulos growth furnace according to claim 1 many warm area insulations side screen, is characterized in that: described arc zirconium oxide fiber board is provided with fixed orifices.
3. sapphire crystal kyropoulos growth furnace according to claim 1 many warm area insulations side screen, is characterized in that: described insulation side screen is outer is provided with a stainless steel outer barrel wall.
4. sapphire crystal kyropoulos growth furnace according to claim 2 many warm area insulations side screen, is characterized in that: described zirconium oxide fiber board two ends are respectively equipped with an engagement part.
5. sapphire crystal kyropoulos growth furnace according to claim 2 many warm area insulations side screen, is characterized in that: described arc zirconium oxide fiber board internal diameter is 248mm, and thickness is 50mm, is highly 89mm.
6. sapphire crystal kyropoulos growth furnace according to claim 2 many warm area insulations side screen, is characterized in that: top and the bottom of described insulation side screen are evenly provided with U-lag and lower U-lag on one group respectively.
7. sapphire crystal kyropoulos growth furnace according to claim 6 many warm area insulations side screen, it is characterized in that: described upper U-lag height is 93.5mm, and width is 32mm, described lower U-lag height is 188.5mm, and width is 32mm.
8. sapphire crystal kyropoulos growth furnace according to claim 6 many warm area insulations side screen, is characterized in that: described insulation side screen is highly 712.5mm, and internal diameter is 248mm, and external diameter is 298mm.
9. sapphire crystal kyropoulos growth furnace according to claim 1 many warm area insulations side screen, is characterized in that: described insulation side screen is made up of 8 layers of zirconium oxide fiber board, and every layer of zirconium oxide fiber board is spliced by 12 pieces of Zirconium oxide fibre Slab element fissure of displacement.
10. sapphire crystal kyropoulos growth furnace according to claim 1 many warm area insulations side screen, is characterized in that: be provided with moisturizing bucket in the screen of described insulation side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420407297.9U CN204039545U (en) | 2014-07-22 | 2014-07-22 | A kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420407297.9U CN204039545U (en) | 2014-07-22 | 2014-07-22 | A kind of sapphire crystal kyropoulos growth furnace many warm area insulations side screen |
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| CN204039545U true CN204039545U (en) | 2014-12-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019144804A1 (en) * | 2018-01-24 | 2019-08-01 | 中国科学院上海硅酸盐研究所 | Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal |
-
2014
- 2014-07-22 CN CN201420407297.9U patent/CN204039545U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019144804A1 (en) * | 2018-01-24 | 2019-08-01 | 中国科学院上海硅酸盐研究所 | Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal |
| US11384451B2 (en) | 2018-01-24 | 2022-07-12 | Anhui Weixin Changjiang Semiconductor Material Co., Ltd. | Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 211100, No. 15, Jingang Road, Dong Ping Town Industrial Park, Lishui District, Jiangsu, Nanjing Patentee after: Nanjing Polytechnic Yulong new materials Polytron Technologies Inc Address before: 211100, No. 15, Jingang Road, Dong Ping Town Industrial Park, Lishui District, Jiangsu, Nanjing Patentee before: NUST YULONG NEW MATERIALS SCIENCE & TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |