CN205062235U - A double crucible that is used for heat exchange method growth jumbo size sapphire - Google Patents

A double crucible that is used for heat exchange method growth jumbo size sapphire Download PDF

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Publication number
CN205062235U
CN205062235U CN201520780115.7U CN201520780115U CN205062235U CN 205062235 U CN205062235 U CN 205062235U CN 201520780115 U CN201520780115 U CN 201520780115U CN 205062235 U CN205062235 U CN 205062235U
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Prior art keywords
crucible
interior
molybdenum
outer crucible
size sapphire
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CN201520780115.7U
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季泳
张龚磊
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Guiyang Jiayu Photoelectric Technology Consulting Center
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Guiyang Jiayu Photoelectric Technology Consulting Center
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Abstract

The utility model discloses a double crucible that is used for heat exchange method growth jumbo size sapphire, it includes outer crucible and interior crucible, interior crucible setting is in in the outer crucible, the bottom surface of interior crucible with the bottom internal surface of outer crucible contacts, the lateral wall of interior crucible with be equipped with a clearance between the lateral wall of outer crucible, be equipped with a strengthening rib support in the clearance, the strengthening rib support respectively with outer crucible and interior crucible detachable connections, wherein, outer crucible is the spinning molybdenum crucible, interior crucible adopts the molybdenum sheet welding to form. The utility model discloses only need destroy the thin interior crucible that forms by the molybdenum sheet welding of wall thickness can, outer crucible then can repeat repetitious usage, it has avoided the destruction to whole crucible, has reduced the use amount of molybdenum, and then has reduced manufacturing cost effectively.

Description

A kind of double crucible for heat-exchanging method growing large-size sapphire
Technical field
The utility model relates to technical field of crystal growth, particularly relates to a kind of double crucible for heat-exchanging method growing large-size sapphire.
Background technology
Sapphire (Sapphire) is the monocrystalline of a kind of aluminum oxide (α-Al2O3).There is excellent optical property, mechanical property and chemical stability, can work under the condition of high temperature.The crystalline network of its uniqueness makes sapphire crystal become the semi-conductor GaN/Al2O3 photodiode (LED) of practical application, the substrate material that large-scale integrated circuit SOI and SOS and superconducting nano structural membrane etc. are ideal.
The sapphire growth method of present main flow has kyropoulos, crystal pulling method and heat-exchanging method and reverse mould method.And heat-exchanging method mainly uses monoblock type molybdenum crucible, general thickness is at about 3.5mm-8mm, and use graphite insulation construction, good heat insulating, observable index kyropoulos is low nearly one times, and allows the size of growth larger than kyropoulos.But the final stage due to crystal growth pastes sidewall of crucible growth, so need to destroy crucible to take out crystal.The production cost of molybdenum crucible is higher, and at present the molybdenum in the whole world is mainly derived from South America, and the cost that molybdenum crucible accounts for crystal production reaches about 15%-30%, each destroy molybdenum crucible take out crystal cause production cost higher not under.
Utility model content
The utility model mainly to solve in prior art existing technical problem, thus provides a kind of reusable, double crucible for heat-exchanging method growing large-size sapphire of reducing costs.
Above-mentioned technical problem of the present utility model is mainly solved by following technical proposals:
The double crucible for heat-exchanging method growing large-size sapphire that the utility model provides, it comprises outer crucible and interior crucible, described interior crucible is arranged in described outer crucible, the bottom outer surface of described interior crucible contacts with the bottom interior surface of described outer crucible, a gap is provided with between the sidewall of described interior crucible and the sidewall of described outer crucible, a stiffening web support is provided with in described gap, described stiffening web support is respectively with described outer crucible with interior crucible is removable is connected, wherein, described outer crucible is spinning molybdenum crucible, and described interior crucible adopts molybdenum sheet to be welded.
Further, the contact surface of described stiffening web support and described interior crucible is also provided with multiple breach, multiple described breach equidistantly distributes along in the short transverse of described stiffening web support.
Further, the top of described stiffening web support is higher than the vertex of described outer crucible and interior crucible.
Further, be welded by molybdenum bar between the bottom of described interior crucible and sidewall.
Further, the diameter of described outer crucible is Φ 200-Φ 600mm, and the wall thickness of described outer crucible is 3.5-8mm, and the diameter 1-50mm less of outer crucible diameter of described interior crucible, the wall thickness of described interior crucible is 0.5-2mm.
The beneficial effects of the utility model are: carry out growing sapphire crystal by interior crucible, and outer crucible and stiffening web support are respectively used to resistance to deformation support and ensure structural strength, after sapphire crystal growth completes, only need destroy wall thickness thinner be welded by molybdenum sheet in crucible, outer crucible then can repeatedly use, which obviate the destruction to whole crucible, reduce the usage quantity of molybdenum, and then significantly reduce production cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the double crucible for heat-exchanging method growing large-size sapphire of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection domain of the present utility model.
Consult shown in Fig. 1, double crucible for heat-exchanging method growing large-size sapphire of the present utility model, it comprises outer crucible 1 and interior crucible 2, interior crucible 2 is arranged in outer crucible 1, the bottom outer surface of interior crucible 2 contacts with the bottom interior surface of outer crucible 1, a gap 3 is provided with between the sidewall of interior crucible 2 and the sidewall of outer crucible 1, a stiffening web support 4 is provided with in gap 3, stiffening web support 4 is respectively with outer crucible 1 with interior crucible 2 is removable is connected, wherein, outer crucible 1 is spinning molybdenum crucible, and interior crucible 2 adopts molybdenum sheet to be welded.The utility model carrys out growing sapphire crystal by interior crucible 2, and outer crucible 1 and stiffening web support 4 are respectively used to resistance to deformation support and ensure structural strength, after sapphire crystal growth completes, only need destroy wall thickness thinner be welded by molybdenum sheet in crucible 2, outer crucible 1 can repeatedly use, which obviate the destruction to whole crucible, reduce the usage quantity of molybdenum, and then significantly reduce production cost.
In the utility model, in order to reduce planarity requirements and the difficulty of processing of stiffening web support 4, stiffening web support 4 and the contact surface of interior crucible 2 are also provided with multiple breach 5, and multiple breach 5 equidistantly distributes along in the short transverse of stiffening web support 4.And conveniently first take out stiffening web support 4, then crucible 2 and sapphire crystal in taking out, the top of stiffening web support 4 is higher than the vertex of outer crucible 1 and interior crucible 2.
Concrete, the bottom of interior crucible 2 adopts circular molybdenum sheet impact briquetting, sidewall is the molybdenum sheet volume of barreled structure, because the use temperature of interior crucible 2 is more than 2100 degrees Celsius, so butt welded seam requires higher, special weldprocedure must be adopted, be welded by molybdenum bar between the bottom of interior crucible 2 and sidewall.In addition, interior crucible 2 adopts welding process to make and reduces difficulty than spinning mode, thus also reduce further its production cost.
Preferably, the diameter of outer crucible 1 is Φ 200-Φ 600mm, and the wall thickness of outer crucible 1 is 3.5-8mm, and the wall thickness that outer crucible 1 is larger makes it have stronger resistance type ability, can repeatedly use.The diameter 1-50mm less of outer crucible 1 diameter of interior crucible 2, the wall thickness of interior crucible 2 is 0.5-2mm, and the wall thickness that interior crucible 2 is thinner greatly reduces consumption and the production cost of molybdenum.
Above, be only embodiment of the present utility model, but protection domain of the present utility model is not limited thereto, any change of expecting without creative work or replacement, all should be encompassed within protection domain of the present utility model.Therefore, the protection domain that protection domain of the present utility model should limit with claims is as the criterion.

Claims (5)

1. the double crucible for heat-exchanging method growing large-size sapphire, it is characterized in that: comprise outer crucible (1) and interior crucible (2), described interior crucible (2) is arranged in described outer crucible (1), the bottom outer surface of described interior crucible (2) contacts with the bottom interior surface of described outer crucible (1), a gap (3) is provided with between the sidewall of described interior crucible (2) and the sidewall of described outer crucible (1), a stiffening web support (4) is provided with in described gap (3), described stiffening web support (4) is respectively with described outer crucible (1) with interior crucible (2) is removable is connected, wherein, described outer crucible (1) is spinning molybdenum crucible, described interior crucible (2) adopts molybdenum sheet to be welded.
2. as claimed in claim 1 for the double crucible of heat-exchanging method growing large-size sapphire, it is characterized in that: described stiffening web support (4) and the contact surface of described interior crucible (2) are also provided with multiple breach (5), and multiple described breach (5) equidistantly distributes along in the short transverse of described stiffening web support (4).
3. as claimed in claim 2 for the double crucible of heat-exchanging method growing large-size sapphire, it is characterized in that: the top of described stiffening web support (4) is higher than the vertex of described outer crucible (1) and interior crucible (2).
4., as claimed in claim 1 for the double crucible of heat-exchanging method growing large-size sapphire, it is characterized in that: be welded by molybdenum bar between the bottom of described interior crucible (2) and sidewall.
5. as claimed in claim 4 for the double crucible of heat-exchanging method growing large-size sapphire, it is characterized in that: the diameter of described outer crucible (1) is Φ 200-Φ 600mm, the wall thickness of described outer crucible (1) is 3.5-8mm, the diameter 1-50mm less of outer crucible (1) diameter of described interior crucible (2), the wall thickness of described interior crucible (2) is 0.5-2mm.
CN201520780115.7U 2015-10-10 2015-10-10 A double crucible that is used for heat exchange method growth jumbo size sapphire Active CN205062235U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111778557A (en) * 2020-06-19 2020-10-16 山东新升光电科技有限责任公司 Crucible for preparing sapphire single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111778557A (en) * 2020-06-19 2020-10-16 山东新升光电科技有限责任公司 Crucible for preparing sapphire single crystal

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