CN203007477U - Structure of single-crystal furnace thermal field for growth of sapphire crystal - Google Patents
Structure of single-crystal furnace thermal field for growth of sapphire crystal Download PDFInfo
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- CN203007477U CN203007477U CN 201220688752 CN201220688752U CN203007477U CN 203007477 U CN203007477 U CN 203007477U CN 201220688752 CN201220688752 CN 201220688752 CN 201220688752 U CN201220688752 U CN 201220688752U CN 203007477 U CN203007477 U CN 203007477U
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Abstract
The utility model relates to a structure of a single-crystal furnace thermal field for the growth of a sapphire crystal. The structure comprises a stainless-steel barrel; the inner side of the stainless-steel barrel is provided with an outer heat-preservation layer; the inner side of the outer heat-preservation layer is provided with an inner heat-preservation barrel; a birdcage-type heater is arranged in the hollow cavity of the inner heat-preservation barrel; a lower heat insulation screen is arranged below the birdcage-type heater; a crucible is arranged in the hollow cavity of the birdcage-type heater and supported by a crucible support structure which is arranged at the bottom of the crucible; the upper end of the crucible is provided with a crucible cover; and an upper heat insulation screen is arranged on the crucible cover. The structure is characterized in that the inner heat-preservation barrel comprises an upper molybdenum section, a middle tungsten section and a lower molybdenum section, the crucible support structure comprises a crucible tray and a tungsten pipe, the crucible tray is arranged on the tungsten pipe and contacts the bottom of the crucible, and the contact part of the crucible tray and the crucible is provided with a zirconium-oxide coating. The structure of the single-crystal furnace thermal field has the advantages of uniform and stable distribution of a thermal field and small temperature gradient and solves the problem of adhesion of the crucible and the crucible tray.
Description
Technical field
The utility model relates to a kind of thermal field structure of single crystal furnace for sapphire crystal growth, especially a kind of thermal field structure of single crystal furnace for the kyropoulos growing large-size sapphire.
Background technology
Sapphire crystal (being commonly called as corundum) from vacuum ultraviolet (VUV), visible, near infrared until infraredly all have a high optical transmittance, also has high mechanical strength, extremely low uptake factor, the high temperature refractoriness, good chemical stability, it is good laser host material, it is the window material of various optical elements and infrared military installation, satellite spatial technology, high intensity laser beam, be to use the most general blue-light semiconductor diode (LED) and the substrate material of diode (LED), almost spread all over all substrate Application Areass.At present, sapphire growth method mainly contains crystal pulling method, reverse mould method, kyropoulos, heat-exchanging method etc.Wherein the kyropoulos growing system has the optimum temperature gradation that is fit to sapphire crystal growth.In the process of growth or when finishing, crystal does not contact with crucible, has greatly reduced its stress, can obtain high-quality macrocrystal, is the main stream approach of present sapphire crystal growth.At present, the kyropoulos growing sapphire generally adopts the birdcage heating element, and insulated tank adopts tungsten or molybdenum to make.The cost of tungsten material is very high, and Mo is because fusing point is relatively low, and volatile ratio is more serious, causes the temperature distribution of sapphire stove unstable, greatly affects the stability of technique.Sapphire production belongs to high energy-consuming industry, the insulation construction of pure tungsten Mo, and heat runs off more serious.Crucible directly is placed on uncoated pallet, all can occur between each production process crucible and pallet intensity very large adhesion.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of thermal field structure of single crystal furnace for sapphire crystal growth is provided, and warm field distribution is uniform and stable, axial and radial symmetry gradient is little, has solved the adhesion problems between crucible and pallet.
The technical scheme that provides according to the utility model, described thermal field structure of single crystal furnace for sapphire crystal growth, comprise stainless steel cask, in the stainless steel cask inboard, external thermal insulation is set, in the external thermal insulation inboard, interior insulated tank is set, the birdcage heating element is set in the inner chamber of interior insulated tank, lower thermoscreen is set below the birdcage heating element, in the inner chamber of birdcage heating element, crucible is set, this crucible is by the crucible supporting support structure of bottom; In described crucible upper end, crucible cover is set, is placing thermoscreen on crucible cover; It is characterized in that: described interior insulated tank is formed by connecting by the molybdenum section on top, the tungsten section at middle part and the molybdenum section of bottom.
The thickness of described interior insulated tank is 1 ~ 2mm.Described crucible supporting structure comprises crucible pallet and tungsten pipe, and the crucible pallet is placed on the tungsten pipe, and the crucible pallet contacts with the bottom of crucible, in the contact part of crucible pallet and crucible, zirconia coating is set.The internal diameter of described tungsten pipe is 50mm, and external diameter is 80mm.Fill filler between described stainless steel cask and external thermal insulation.Described filler is zirconium white.Described outer insulated tank is multilayered structure, and the thickness of every layer is 0.5mm, and the distance between every layer is 5mm.The tungsten sheet that described crucible cover is 1mm by multi-layered thickness forms.The molybdenum sheet that described upper thermoscreen is 1mm by 5 ~ 8 thickness forms, and the tungsten sheet that described lower thermoscreen is 1mm by 8 ~ 10 thickness forms.The molybdenum section on described top and the molybdenum section of bottom are made by Mo, and the tungsten section at middle part is made by the tungsten material.
Thermal field structure of single crystal furnace for sapphire crystal growth described in the utility model adopts birdcage heating element and thermoscreen up and down and crucible supporting structure reasonable in design, produces the thermograde that is suitable for sapphire growth; Adopt the insulation construction of tungsten and molybdenum material combination, make the body of heater thermal field stablize and reduce costs; Adopt zirconium white as filler, reduce energy consumption; Adopt the crucible pallet of coating, solve the adhesion problems between crucible and pallet.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with concrete accompanying drawing.
As shown in Figure 1: described thermal field structure of single crystal furnace for sapphire crystal growth comprises birdcage heating element 1, crucible cover 2, upper thermoscreen 3, crucible pallet 4, lower thermoscreen 5, interior insulated tank 6, external thermal insulation 7, stainless steel cask 8, filler 9, crucible 10, tungsten pipe 11, zirconia coating 12 etc.
As shown in Figure 1, the utility model comprises stainless steel cask 8, in stainless steel cask 8 inboards, external thermal insulation 7 is set, in external thermal insulation 7 inboards, interior insulated tank 6 is set, birdcage heating element 1 is set in the inner chamber of interior insulated tank 6, the tungsten bar that this birdcage heating element 1 is 5mm by diameter is made, and crucible 10 is set in the inner chamber of birdcage heating element 1, and this crucible 10 is by the crucible supporting support structure of bottom; In described crucible 10 upper ends, crucible cover 2 is set, the tungsten sheet that crucible cover 2 is 1mm by 5 layer thicknesses is made, and is placing thermoscreen 3 on crucible cover 2, and the molybdenum sheet that upper thermoscreen 3 is 1mm by 5 ~ 8 thickness is made; Lower thermoscreen 5 is set below described birdcage heating element 1, and the tungsten sheet that lower thermoscreen 5 is 1mm by 8 ~ 10 thickness is made;
Described crucible supporting structure comprises crucible pallet 4 and tungsten pipe 11, and crucible pallet 4 is placed on tungsten pipe 11, and crucible pallet 4 contacts with the bottom of crucible 10, in the contact part of crucible pallet 4 and crucible 10, zirconia coating 12 is set; The internal diameter of described tungsten pipe 11 is 50mm, and external diameter is 80mm;
Fill filler 9 between described stainless steel cask 8 and external thermal insulation 7, filler 9 is zirconium white;
Described interior insulated tank 6 is formed by three sections riveted joints of upper, middle and lower, and the stage casing is made by the tungsten material, and two sections are made by Mo; The thickness of described interior insulated tank 6 is 1 ~ 2mm;
Described outer insulated tank 7 is multilayered structure, and every layer of Mo by thickness 0.5mm made, and the distance between every layer is 5mm;
The stainless steel plate that described stainless steel cask 8 is 1mm by thickness is made, and the distance between stainless steel cask 8 inwalls and external thermal insulation 7 outer walls is 10 ~ 20mm.
The utlity model has following effect: (1) the utility model adopts birdcage heating element and thermoscreen up and down and crucible supporting structure reasonable in design, generation is suitable for the thermograde of sapphire growth, meets the kyropoulos growing sapphire to the requirement of temperature distribution; (2) interior insulated tank of the present utility model 6 adopts the upper, middle and lower three-stage structures, uses the tungsten material in the high-temperature zone, and because the fusing point of tungsten material is 3410 degrees centigrade, far above sapphire fusing point, so under high temperature, evaporation rate is little, is beneficial to thermal field stable; Relatively low district uses Mo in temperature, is beneficial to reduce costs; (3) the utility model uses zirconium white as packing material, has effectively reduced energy consumption; (4) the utility model uses the crucible pallet with zirconia coating, has effectively solved the adhesion problems between crucible and pallet, is conducive to operate and improve the work-ing life of thermal field.
Claims (10)
1. thermal field structure of single crystal furnace that is used for sapphire crystal growth, comprise stainless steel cask (8), in stainless steel cask (8) inboard, external thermal insulation (7) is set, in external thermal insulation (7) inboard, interior insulated tank (6) is set, birdcage heating element (1) is set in the inner chamber of interior insulated tank (6), in the below of birdcage heating element (1), lower thermoscreen (5) is set, crucible (10) is set in the inner chamber of birdcage heating element (1), and this crucible (10) is by the crucible supporting support structure of bottom; In described crucible (10) upper end, crucible cover (2) is set, places upper thermoscreen (3) on crucible cover (2); It is characterized in that: described interior insulated tank (6) is formed by connecting by the molybdenum section on top, the tungsten section at middle part and the molybdenum section of bottom.
2. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, it is characterized in that: the thickness of described interior insulated tank (6) is 1 ~ 2mm.
3. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, it is characterized in that: described crucible supporting structure comprises crucible pallet (4) and tungsten pipe (11), crucible pallet (4) is placed on tungsten pipe (11), crucible pallet (4) contacts with the bottom of crucible (10), in the contact part of crucible pallet (4) and crucible (10), zirconia coating (12) is set.
4. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 3, it is characterized in that: the internal diameter of described tungsten pipe (11) is 50mm, external diameter is 80mm.
5. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, is characterized in that: fill filler (9) between described stainless steel cask (8) and external thermal insulation (7).
6. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 5, it is characterized in that: described filler (9) is zirconium white.
7. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, it is characterized in that: described outer insulated tank (7) is multilayered structure, and the thickness of every layer is 0.5mm, and the distance between every layer is 5mm.
8. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, it is characterized in that: the tungsten sheet that described crucible cover (2) is 1mm by multi-layered thickness forms.
9. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, it is characterized in that: the molybdenum sheet that described upper thermoscreen (3) is 1mm by 5 ~ 8 thickness forms, and the tungsten sheet that described lower thermoscreen (5) is 1mm by 8 ~ 10 thickness forms.
10. the thermal field structure of single crystal furnace for sapphire crystal growth as claimed in claim 1, it is characterized in that: the molybdenum section on described top and the molybdenum section of bottom are made by Mo, and the tungsten section at middle part is made by the tungsten material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220688752 CN203007477U (en) | 2012-12-13 | 2012-12-13 | Structure of single-crystal furnace thermal field for growth of sapphire crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220688752 CN203007477U (en) | 2012-12-13 | 2012-12-13 | Structure of single-crystal furnace thermal field for growth of sapphire crystal |
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| CN203007477U true CN203007477U (en) | 2013-06-19 |
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| CN 201220688752 Expired - Fee Related CN203007477U (en) | 2012-12-13 | 2012-12-13 | Structure of single-crystal furnace thermal field for growth of sapphire crystal |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103352247A (en) * | 2013-07-17 | 2013-10-16 | 苏州巍迩光电科技有限公司 | Axial temperature gradient-adjustable insulation structure applied to growth of sapphire single crystals by Kyropoulos method |
| CN103422162A (en) * | 2013-09-03 | 2013-12-04 | 无锡鼎晶光电科技有限公司 | Single crystal furnace thermal field structure for square sapphire generation |
| CN105603510A (en) * | 2016-02-03 | 2016-05-25 | 江苏浩瀚蓝宝石科技有限公司 | Single crystal growth furnace |
| CN105887197A (en) * | 2016-05-05 | 2016-08-24 | 中国科学院合肥物质科学研究院 | Crystal growing device of rare earth sesquioxide by Czochralski method |
| CN105980614A (en) * | 2013-12-03 | 2016-09-28 | Lg矽得荣株式会社 | An apparatus for growing a single crystal |
| CN106435717A (en) * | 2016-08-24 | 2017-02-22 | 天通银厦新材料有限公司 | Growth equipment and growth technology for 200-kg sapphire crystals |
| CN108609864A (en) * | 2016-12-12 | 2018-10-02 | 银川隆基硅材料有限公司 | A kind of plated film heat insulation reflecting quartz heat shielding and preparation method thereof |
| CN114959879A (en) * | 2022-04-28 | 2022-08-30 | 深圳技术大学 | Anti-sintering single crystal furnace and single crystal preparation method |
-
2012
- 2012-12-13 CN CN 201220688752 patent/CN203007477U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103352247A (en) * | 2013-07-17 | 2013-10-16 | 苏州巍迩光电科技有限公司 | Axial temperature gradient-adjustable insulation structure applied to growth of sapphire single crystals by Kyropoulos method |
| CN103352247B (en) * | 2013-07-17 | 2016-06-29 | 江苏国晶光电科技有限公司 | A kind of adjustable insulation construction of axial-temperature gradient being applied to kyropoulos Sapphire Crystal Growth |
| CN103422162A (en) * | 2013-09-03 | 2013-12-04 | 无锡鼎晶光电科技有限公司 | Single crystal furnace thermal field structure for square sapphire generation |
| CN105980614A (en) * | 2013-12-03 | 2016-09-28 | Lg矽得荣株式会社 | An apparatus for growing a single crystal |
| CN105980614B (en) * | 2013-12-03 | 2018-08-14 | Lg矽得荣株式会社 | Single-crystal growing apparatus |
| US10066315B2 (en) | 2013-12-03 | 2018-09-04 | Sk Siltron Co., Ltd. | Single crystal growing apparatus |
| CN105603510A (en) * | 2016-02-03 | 2016-05-25 | 江苏浩瀚蓝宝石科技有限公司 | Single crystal growth furnace |
| CN105887197A (en) * | 2016-05-05 | 2016-08-24 | 中国科学院合肥物质科学研究院 | Crystal growing device of rare earth sesquioxide by Czochralski method |
| CN106435717A (en) * | 2016-08-24 | 2017-02-22 | 天通银厦新材料有限公司 | Growth equipment and growth technology for 200-kg sapphire crystals |
| CN108609864A (en) * | 2016-12-12 | 2018-10-02 | 银川隆基硅材料有限公司 | A kind of plated film heat insulation reflecting quartz heat shielding and preparation method thereof |
| CN114959879A (en) * | 2022-04-28 | 2022-08-30 | 深圳技术大学 | Anti-sintering single crystal furnace and single crystal preparation method |
| CN114959879B (en) * | 2022-04-28 | 2023-11-03 | 深圳技术大学 | Anti-sintering single crystal furnace and single crystal preparation method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130619 Termination date: 20151213 |
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| EXPY | Termination of patent right or utility model |