CN105088332A - Improved structure of single crystal furnace for growing large-size sapphire - Google Patents
Improved structure of single crystal furnace for growing large-size sapphire Download PDFInfo
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- CN105088332A CN105088332A CN201510553932.3A CN201510553932A CN105088332A CN 105088332 A CN105088332 A CN 105088332A CN 201510553932 A CN201510553932 A CN 201510553932A CN 105088332 A CN105088332 A CN 105088332A
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Abstract
The invention provides an improved structure of a single crystal furnace for growing large-size sapphire. The improved structure comprises an upper thermal insulation structure, side thermal insulation structures and a bottom thermal insulation structure, wherein the upper thermal insulation structure and the bottom thermal insulation structure are identical to those in patents of the earlier stage; the difference resides in that the thicknesses of the thermal insulation layers are gradually reduced from top to bottom instead of identical thicknesses of upper and lower structures of the side thermal insulation structures, the diameter of a birdcage-like heating body is gradually reduced from top to bottom, and the heating body is in a shape of an inverted cone. The thermal field is uniform and reasonable, the crystal growth rate is stable, defects that crystals generates clouds, are glued on pots and the like can be effectively reduced, the dependence on a process control worker is low, and the crystal growth yield is high.
Description
(1) technical field
The present invention relates to a kind of single crystal growing furnace modified node method of growing large-size sapphire, be specifically related to a kind of single crystal growing furnace modified node method of kyropoulos growing large-size sapphire.
(2) background technology
Sapphire single-crystal has the excellent performance such as mechanics, calorifics, optics, and being widely used in the numerous areas of science and technology, national defence and civilian industry, semicon industry, is the preferred material of blue light GaN epitaxy substrate in current LED market.Along with the continuous progress of Sapphire Crystal Growth and processing technology, industry development reaches its maturity, sapphire product highlights increasingly in the comprehensive advantage of cost and aspect of performance, also therefore makes sapphire present good application prospect in consumer electronics and other consumer product.
Along with the continuous progress continually developed with crystal growth and processing technology of sapphire application market, have higher requirement to the quality of sapphire product and size in downstream, large size, high-quality, low cost are the inexorable trends of sapphire single-crystal industry development.
Sapphire growth method has a lot, and the main growth methods of high-quality sapphire single-crystal is kyropoulos on the market at present, adopts the sapphire single-crystal of the method growth to account for more than 70% of the total market size.Although kyropoulos level of automation is relatively low, equipment for growing sapphire single crystal and the technology of less than 45 kilograms are mature on the whole.But more the growth of large-size sapphire single-crystal is had higher requirement to equipment and technology, set up with maintenance rational temperature field difficulty larger.Especially for the crystal growth later stage, because melt temperature gradient is little, the speed of growth is wayward, and crystal stress is large, and growth yield rate is relatively low.
(3) summary of the invention
The object of the invention is to make warm field distribution in stove more even by one, growth interface keeps certain protrusion rate simultaneously.Avoid crystal growth early growth speed instability and cause because later stage crystalline growth velocity is too fast forming the defect such as bubble, cracking, improving the single crystal growing furnace modified node method of the growing large-size sapphire of large-size sapphire single-crystal crystal growth yield rate.
The object of the present invention is achieved like this: structure is divided into top, side and Bottom heat preservation structure and birdcage shape heating member 7, Thermal-insulation structure on upper part comprises molybdenum heat screen 1 and molybdenum crucible lid 2, side insulation construction comprises molybdenum cylinder thermoscreen 3 and ceramic insulating layer 4, Bottom heat preservation structure comprises lower molybdenum heat screen 5 and bottom ceramic insulating layer 6, side insulation construction from top to bottom ceramic insulating layer 4 thickness reduces gradually, molybdenum cylinder thermoscreen 3 is multilayer molybdenum cylinder, 2 ~ 6 layers of inner close heating member is non-full height molybdenum cylinder, outside is overall height molybdenum cylinder, non-full height molybdenum cylinder increases from the inside to the outside highly gradually, adjacent molybdenum cylinder difference of altitude reduces gradually, birdcage shape heating member 7 diameter from top to bottom reduces gradually, in back taper.
The present invention also has some features like this:
1, described ceramic insulating layer 4 is aluminum oxide or zirconia ceramics insulating brick or is incubated layers of balls composition;
2, described multilayer molybdenum cylinder between heating member and ceramic insulating layer, totally 10 ~ 18 layers, molybdenum sheet thickness 0.3 ~ 2mm.
Beneficial effect of the present invention has:
1. add non-full height molybdenum cylinder layer in the insulation construction of side, strengthen stove inside holding on the one hand, contribute to shortening the material time, increase melt bottom temp gradient; On the other hand, Thermal-insulation structure on upper part strengthens, and can reduce melt liquid level radiating rate, increases radial symmetry gradient, is conducive to the stable crystal speed of growth.
2. non-full height molybdenum cylinder layer height increases gradually, is conducive to forming uniform axial-temperature gradient, both can ensure the protrusion rate of crystal growth front, bubble is easily discharged, and later stage crystalline growth velocity can be avoided again too fast, occur a large amount of cloud and mist bottom crystal.
3. heating member is designed to inverted cone-shaped structure, can ensure, in stove, there is enough axial-temperature gradients, avoid crystalline growth velocity too fast, also can reduce radial growth speed to a certain extent in the crystal growth later stage simultaneously, keep certain interface protrusion rate, reduce the formation probability of bottom cloud and mist, reduce crystal internal stress.
4. the improvement of side insulation construction and heating member, makes thermal field more uniform and stable, reduces crystal growth and controls difficulty, and then decrease the dependency of personnel.
The present invention improves thermal field structure on the basis of granted patent ZL200920100239.0 in early stage, mainly overcome two aspect problems: one is that stove inner height is large, upper of furnace body heat radiation is little to bottom influences, in temperature field, axial temperature gradient distribution change greatly, melt upper temp gradient is larger, and bottom temp gradient is too small, this causes crystalline growth velocity, and especially the later stage is difficult to control; Two is that large-size sapphire single crystal growth furnace internal cause diameter is large, and top rapid heat dissipation, radial symmetry gradient is little, easily causes crystal Unstable Growth.The present invention carries out particular design by offside thermoscreen and heating member, and the two cooperatively interacts, and make warm field distribution in stove more even, growth interface keeps certain protrusion rate simultaneously.Avoid crystal growth early growth speed instability and cause because later stage crystalline growth velocity is too fast forming the defect such as bubble, cracking, improving the crystal growth yield rate of large-size sapphire single-crystal.
(4) accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
(5) embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.Fig. 1 is the sapphire single-crystal structural representation that the present embodiment improves, this one-piece construction single crystal growing furnace inside holding basic structure is constant, is still divided into top (upper molybdenum heat screen 1 and molybdenum crucible lid 2), side (molybdenum cylinder thermoscreen 3 and ceramic insulating layer 4) and Bottom heat preservation structure (lower molybdenum heat screen 5 and bottom ceramic insulating layer 6).Substantially identical in top and Bottom heat preservation structure and early stage patent, difference is that side insulation construction is reduced gradually by the identical insulation layer thickness from top to bottom that changes into of up-down structure, specifically as shown in the figure, before improving, the height of multilayer molybdenum cylinder side thermoscreen 3 is identical, after improving, 2 ~ 6 layers of the inner close heating member of multilayer molybdenum cylinder thermoscreen 3 is non-full height molybdenum cylinder, and outside is overall height molybdenum cylinder.Further, non-full height molybdenum cylinder increases from the inside to the outside highly gradually, and adjacent molybdenum cylinder difference of altitude reduces gradually.Birdcage shape heating member 7 diameter from top to bottom reduces, gradually in back taper.
Present invention sets forth the improvement side thermoscreen and heating member structure that are particularly suited for growing high length-diameter ratio sapphire single-crystal; on idea basis of the present invention; also can adjust according to the specification of concrete growing crystal; such as by designing ceramic thermal insulation layer thickness, the uniform object in warm field is made also to belong to protection scope of the present invention to reach.
Claims (3)
1. the single crystal growing furnace modified node method of a growing large-size sapphire, it comprises top, side and Bottom heat preservation structure and birdcage shape heating member, Thermal-insulation structure on upper part comprises molybdenum heat screen and molybdenum crucible lid, side insulation construction comprises molybdenum cylinder thermoscreen and ceramic insulating layer, Bottom heat preservation structure comprises lower molybdenum heat screen and bottom ceramic insulating layer, it is characterized in that described side insulation construction from top to bottom ceramic thermal insulation layer thickness reduce gradually, molybdenum cylinder thermoscreen is multilayer molybdenum cylinder, 2 ~ 6 layers of inner close heating member is non-full height molybdenum cylinder, outside is overall height molybdenum cylinder, non-full height molybdenum cylinder increases from the inside to the outside highly gradually, adjacent molybdenum cylinder difference of altitude reduces gradually, birdcage shape heating member diameter from top to bottom reduces gradually, in back taper.
2. the single crystal growing furnace modified node method of growing large-size sapphire according to claim 1, is characterized in that described ceramic insulating layer is aluminum oxide or zirconia ceramics insulating brick or is incubated layers of balls composition.
3. the single crystal growing furnace modified node method of growing large-size sapphire according to claim 1 and 2, is characterized in that described multilayer molybdenum cylinder is between heating member and ceramic insulating layer, totally 10 ~ 18 layers, molybdenum sheet thickness 0.3 ~ 2mm.
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| CN201510553932.3A CN105088332A (en) | 2015-09-02 | 2015-09-02 | Improved structure of single crystal furnace for growing large-size sapphire |
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| CN201510553932.3A CN105088332A (en) | 2015-09-02 | 2015-09-02 | Improved structure of single crystal furnace for growing large-size sapphire |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106381525A (en) * | 2016-10-25 | 2017-02-08 | 北京鼎泰芯源科技发展有限公司 | Device capable of reducing InP crystal twin based on VGF method |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
| CN111850688A (en) * | 2020-07-22 | 2020-10-30 | 哈尔滨秋硕半导体科技有限公司 | Cooling device for inhibiting shoulder shrinkage of sapphire single crystal by kyropoulos method |
| US20210355600A1 (en) * | 2020-05-18 | 2021-11-18 | Youngdo Global Co., Ltd. | Heat shield device for low oxygen single crystal growth of single crystal ingot growth device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106381525A (en) * | 2016-10-25 | 2017-02-08 | 北京鼎泰芯源科技发展有限公司 | Device capable of reducing InP crystal twin based on VGF method |
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| US20210355600A1 (en) * | 2020-05-18 | 2021-11-18 | Youngdo Global Co., Ltd. | Heat shield device for low oxygen single crystal growth of single crystal ingot growth device |
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Application publication date: 20151125 |