CN104073878A - Sapphire crystal growing furnace side screen and preparation method thereof - Google Patents
Sapphire crystal growing furnace side screen and preparation method thereof Download PDFInfo
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- CN104073878A CN104073878A CN201410350961.5A CN201410350961A CN104073878A CN 104073878 A CN104073878 A CN 104073878A CN 201410350961 A CN201410350961 A CN 201410350961A CN 104073878 A CN104073878 A CN 104073878A
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- zirconium oxide
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Abstract
The invention discloses a sapphire crystal growing furnace side screen. The drum-shaped growing furnace side screen comprises an inner screen and an outer screen connected with the inner screen, wherein the inner screen and the outer screen are both assembled by a plurality of zirconia fiberboards. The invention further discloses a preparation method for the sapphire crystal growing furnace side screen. The growing furnace side screen reduces electrical consumption, lowers the peak power of long crystal, saves energy by above 40%, and is favorable in stability; the zirconia fiberboards are free of volatilization in a high-temperature state, favorable in vacuum degree and stability of the temperature gradient of the thermal field, and assembled by the same arc-shaped zirconia fiberboards in a staggered joint manner; the zirconia fiberboards can be independently replaced when damaged, the entire heat-insulating side screen is not needed to be replaced, and the manufacturing cost of sapphire crystal is effectively lowered.
Description
Technical field
The invention belongs to crystal growing furnace insulation side screen field, relate in particular to a kind of sapphire crystal growing furnace side screen and preparation method thereof.
Background technology
Sapphire single-crystal is a kind of simple corrdination type oxide crystal, is anisotropy, belongs to hexagonal system, lattice parameter a=b=0.4758nm, c=1.2991nm, α=β=90 °, γ=120 °.The transparency range of sapphire single-crystal is 0.14～6.0 μ m, and covering vacuum ultraviolet, visible, near infrared be to middle-infrared band, and has very high optical transmittance at 3～5 mu m wavebands; There is mechanics and the thermal property of high rigidity (being only second to diamond), high strength, high heat conductance, high heat shock resistance quality factor; Can the varying environment between very low temperature to 1500 DEG C high temperature, keep in temperature range the stability of high strength, abrasion performance and height.There is the stable chemical property of the corrosion such as resistance to rainwater, sand and dust, salt fog; There is high surface smoothness, high resistivity and high dielectric property.Sapphire is best with its over-all properties, becomes most popular Oxide substrate materials.Sapphire crystal or the good window material of infrared military device, guided missile, submarine, satellite spatial technology, detection and high power strong laser etc. simultaneously, high-quality optical material, abrasion-resistant bearing materials etc. especially have irreplaceable effect in the military products such as guided missile dome, submarine window and atomic clock.
Sapphire monocrystal growth method can be divided into two large classes: large temperature gradient method and little temperature gradient method.Large temperature gradient method mainly comprises: crystal pulling method, guided mode method etc.; Little temperature gradient method mainly comprises: kyropoulos, heat-exchanging method, the terraced method of guiding temperature etc.
Wherein crystal pulling method claims again Czochralski method, Poladino in 1964 and Rotter first by the method for Sapphire Crystal Growth.At present, the crystal pulling method of acquisition sizable application is induction heating crucible crystal pulling method.Crystal pulling method is one of most important method of growing single-crystal in melt, and it utilizes, and seed crystal rotates in the alumina melt of iridium crucible, pulling growth sapphire single-crystal.The major advantage of crystal pulling method is: the growing state that can observe easily crystal in the process of growth; Crystal is grown at bath surface place, and does not contact with crucible, can reduce significantly like this stress of crystal, and prevent the parasitic nucleation of crucible wall; Can use easily oriented seed and " necking down " technique, its dislocation desity reduces greatly.Main drawback is: crystal and crucible rotate the natural convection that the forced convection that causes and action of gravity cause and interact, and cause the effect of complicated liquid stream, thereby easily in crystal, produce defect; Cost is higher simultaneously, and crystal diameter is also subject to certain limitation.
Kyropoulos is proposed by Kyropoulos early than nineteen twenty-six, utilize the process of kyropoulos growing sapphire monocrystalline as follows: the sapphire seed crystal 1) metal carrying pull bar bottom seed holder being accompanied, in immersion molybdenum crucible, temperature is up to melt (fused alumina) surface of 2340K; 2) strictly control melt temperature, make its surface temperature a little more than seed crystal fusing point, melt and remove a small amount of seed crystal, so that sapphire single-crystal can be grown in seed crystal face; 3) treat that seed crystal and melt fully infiltrate, reduce surface temperature to fusing point, make melt top in supercooled state, seed crystal slow pulling growth sapphire single-crystal upwards from melt; 4) strictly regulate heater power, make bath surface temperature equal seed crystal fusing point, progressively to realize necking down-expansion shoulder-isodiametric growth-ending whole process of Sapphire Crystal Growth.
The advantage of kyropoulos is: the advantage that 1) combines traditional crystal pulling method; 2) speed of growth very fast (being generally 0.1～25mm/h); 3) crystal does not contact with crucible in process of growth, can reduce the thermal stresses of crystal and avoid the pollution of crucible; 4) can growing large-size, high quality sapphire single-crystal.Main drawback is: for obtaining high-quality sapphire single-crystal, need to improve the envrionment temperature (being also the temperature in furnace chamber) of crucible outer wall in furnace chamber, affect and this temperature is subject to the form of heating unit and be added in the factors such as voltage and current on well heater, thereby improve temperature and will cause the severe attrition of growth apparatus.Kyropoulos be grow at present major diameter sapphire single-crystal effectively and more ripe method, prepared large-sized sapphire single-crystal.
Disclosed state in 2002 applies for a patent 02120954.9 provides a kind of ceramic fiber warming plate, it adopts alumina-silicate ceramic fibre, organic bond, inorganic bonding agent and additive composition, and the weight ratio of aluminum silicate fiber, organic bond, inorganic bonding agent and additive is: 40～60:20～30:0.5～1.5:20～30.Wherein organic bond is one or more the mixture in polyacrylamide, cationic starch or carboxymethyl cellulose, and inorganic bonding agent is one or more the mixture in cement, silicon sol, aluminium colloidal sol or water glass.Additive is one or more above mixtures in ground silica, expansion ground silica, expansion silicic acid rock dust or silicon powder.Although this material has heat insulation and heat insulation effect, be only applicable to low temperature field.Disclosed another China in 2010 applies for a patent 200810138342.4 provides a kind of mullite fiber brick.Adopting mullite crystal fiber is main raw material, and through comprising that batch mixing, moulding, dry, firing process make, the chemical composition of described mullite fiber brick is as follows: Al
2o
335～72%, SiO
227～64, Fe
2o
31～1.2%.Have the excellent properties of light-weight mullite brick and ceramic fiber material concurrently, and it is little to have volume density, specific heat capacity is little, good thermal shock, the advantage such as thermal conductivity is little.But mullite fusing point low (1870 DEG C), can not serve as the side screen material of sapphire crystal growing furnace.
Disclosed state in 2013 applies for a patent 201210553940.4 provides the raw stove insulation of a kind of sapphire growth bubble upper screen.In kyropoulos growing sapphire crystal process, seeding is the key that determines whole crystal growth success or failure, and current kyropoulos need to manually carry out seeding inoculation.Therefore in seeding process, need constantly to observe the situation that contacts of seed crystal and liquid level, judge that whether seeding warm spot is suitable, and control its speed of growth, observe seeding initial stage growth state of crystal and control necking down technique, patent is improved the observation groove of the upper screen of the raw stove insulation of existing bubble, easy to use.Described upper screen adopts the molybdenum sheet composition of multilayer parallel.Disclosed state in 2013 applies for a patent the 201310112446.9 stepped heat shieldings that a kind of sapphire crystal growing furnace is provided, described heat shielding comprises by coaxial superimposed the first tungsten sheet group forming of some tungsten sheets, tungsten sheet central authorities are provided with perforate, and affiliated opening diameter reduces from top to bottom successively.This structure has increased heat insulation effect, has reduced service rating, has saved cost, has improved crystal yield rate.But at present, also rarely have and mention about the design of sapphire crystal growing furnace side screen.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of sapphire crystal growing furnace side screen and preparation method thereof.
Technical scheme: for solving the problems of the technologies described above, a kind of sapphire crystal growing furnace side screen provided by the invention, described growth furnace side screen is barrel-shaped, comprises interior screen and the outer screen being connected with interior screen, and described interior screen and outer screen are all to be combined by some zirconium oxide fiber boards.
Further, described zirconium oxide fiber board is made up of following component by mass percentage:
Preferably, described Y
2o
3mass percentage content be 15.37 ± 1.59%.
Further, described zirconium oxide fiber board two ends are respectively equipped with an engagement part.
Further, described interior screen adopts fissure of displacement connecting method to form by 9 layers of zirconium oxide fiber board, every layer of zirconium oxide fiber board adopts fissure of displacement connecting method to form by 12 zirconium oxide fiber boards, adopting this fissure of displacement connecting method structure one is stabilized structure, the 2nd, reduce as far as possible the calorific loss that bring in space, increase heat insulation effect, be so more conducive to the growth of sapphire crystal.
Further, the zirconium oxide fiber board of described interior screen is of a size of thickness 30mm, height 100mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, external diameter 11 π mm.
Further, described outer screen adopts fissure of displacement connecting method to form by 8 layers of zirconium oxide fiber board, and every layer of zirconium oxide fiber board adopts fissure of displacement connecting method to form by 12 zirconium oxide fiber boards.
Further, the zirconium oxide fiber board of described outer screen is of a size of thickness 40mm, height 113mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.
Further, be provided with one deck zirconia brick layer in described interior screen, described zirconia brick is of a size of thickness 30mm, height 47mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.
The preparation method of above-mentioned sapphire crystal growing furnace side screen, the design requirements of shielding according to sapphire crystal growing furnace side is in specific mould, adopt vacuum forming to produce the wet base of the effigurate zirconium oxide fiber board of tool, after drying, sintering, obtain zirconium oxide fiber board blank, obtain having the zirconium oxide fiber board of specified shape and physicochemical property by surface finish, cutting machine processing.
Beneficial effect: the present invention in terms of existing technologies, possesses following advantage:
1) reduce current consumption; Can reduce long brilliant maximum power, energy-conservation more than 40%.
2) stability is good: zirconium oxide fiber board is non-volatile under the condition of high temperature, and vacuum tightness and temperature of thermal field gradient have good stability.
3) reduce crystal growth cycle, can save time 2 days to 4 days.
4) chamber structure can replace conventional tungsten molybdenum shield, does not need to add other lagging material again, reduces the volume of whole thermal field, reduces the pollution of whole thermal field simultaneously.
5) compared with the sapphire matter of growing with traditional side screen protection adiabator, the monocrystalline better quality growing.
6) the insulation side screen that the present invention makes adopts the identical arc zirconium oxide fiber board fissure of displacement to be spliced, and certain piece fiberboard can be changed separately after damaging, and without being incubated side screen integral replacing, effectively reduces the production cost of sapphire crystal.
Brief description of the drawings
Fig. 1 is a kind of size and shape schematic diagram of interior screen zirconium oxide fiber board.
Fig. 2 is the design diagram of 100 feather weight sapphire growth furnace side screen schemes one.
Fig. 3 is the design diagram of 100 feather weight sapphire growth furnace side screen schemes two.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Embodiment 1
The design requirements of shielding according to sapphire crystal growing furnace side is in specific mould, adopt vacuum forming to produce the wet base of the effigurate zirconium oxide fiber board of tool, after drying, sintering, obtain zirconium oxide fiber board blank, obtain having the zirconium oxide fiber board of specified shape and physicochemical property by the machining such as surface finish, cutting.
Prepared zirconium oxide fiber board is as shown in Figure 1 made up of following component by mass percentage:
As shown in Figure 2, the zirconium oxide fiber board of the interior screen 1 wherein designing according to scheme one is of a size of thickness 30mm, height 100mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, external diameter 11 π mm, the zirconium oxide fiber board of outer screen 2 is of a size of thickness 40mm, height 113mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.
100 feather weight sapphire crystal growing furnace side screen shape and sizes shown in scheme one, its camber 940mm, internal diameter R
1245mm, external diameter R
2320mm, interior screen thickness 30mm, outer screen thickness 40mm, innermost layer is tungsten bucket, and thickness is 3～7mm, and outermost layer is high-purity stainless steel urceolus, and gap between urceolus and external diameter is 5mm.Overall point of inside and outside two screens, interior screen is divided into 9 layers, and outer screen is divided into 8 layers, and wherein every layer is made up of 12 fiberboards, adopts fissure of displacement connecting method, and its main purpose is: the one, stabilized structure, the 2nd, reduce as far as possible the calorific loss that bring in space, increase heat insulation effect.So more be conducive to the growth of sapphire crystal.
Embodiment 2
According to the fiberboard making method of publication, according to the design requirements of sapphire crystal growing furnace side screen having in the mould of specified shape and size, adopt vacuum forming to produce the wet base of the effigurate zirconium oxide fiber board of tool, through 90～100 DEG C dry, more than 1600 DEG C after high temperature sintering, obtain zirconium oxide fiber board blank, obtain having the zirconium oxide fiber board of specified shape and physicochemical property by the machining such as surface finish, cutting.
Prepared zirconium oxide fiber board is made up of following component by mass percentage:
As shown in Figure 3, the zirconium oxide fiber board of the interior screen 1 wherein designing according to scheme two is of a size of thickness 30mm, height 100mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, external diameter 11 π mm.The zirconium oxide fiber board of outer screen 2 is of a size of thickness 40mm, height 113mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.
100 feather weight sapphire crystal growing furnace side screen shape and sizes shown in scheme two, its camber 940mm, internal diameter R
1245mm, external diameter R
2320mm, interior screen thickness 30mm, outer screen thickness 40mm, innermost layer is zirconia block layer 3, it is of a size of thickness 30mm, height 47mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.And outermost layer is high-purity stainless steel urceolus, and gap between urceolus and external diameter is 5mm.Overall point of inside and outside two screens of side screen, interior screen is divided into 9 layers, and outer screen is divided into 8 layers, and wherein every layer is made up of 12 fiberboards, adopts fissure of displacement connecting method.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a sapphire crystal growing furnace side screen, is characterized in that: described growth furnace side screen is barrel-shaped, comprises interior screen and the outer screen being connected with interior screen, and described interior screen and outer screen are all to be combined by some zirconium oxide fiber boards.
2. sapphire crystal growing furnace side screen according to claim 1, is characterized in that: described zirconium oxide fiber board is made up of following component by mass percentage:
3. sapphire crystal growing furnace side screen according to claim 2, is characterized in that: described Y
2o
3mass percentage content be 15.37 ± 1.59%.
4. sapphire crystal growing furnace side screen according to claim 2, is characterized in that: described zirconium oxide fiber board two ends are respectively equipped with an engagement part.
5. according to the sapphire crystal growing furnace side screen described in claim 1 or 2, it is characterized in that: described interior screen adopts fissure of displacement connecting method to form by 9 layers of zirconium oxide fiber board, every layer of zirconium oxide fiber board adopts fissure of displacement connecting method to form by 12 zirconium oxide fiber boards; The zirconium oxide fiber board of described interior screen is of a size of thickness 30mm, height 100mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, external diameter 11 π mm.
6. according to the sapphire crystal growing furnace side screen described in claim 1 or 2, it is characterized in that: described outer screen adopts fissure of displacement connecting method to form by 8 layers of zirconium oxide fiber board, every layer of zirconium oxide fiber board adopts fissure of displacement connecting method to form by 12 zirconium oxide fiber boards; The zirconium oxide fiber board of described outer screen is of a size of thickness 40mm, height 113mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.
7. according to the sapphire crystal growing furnace side screen described in claim 1 or 2, it is characterized in that: described outer screen is provided with a stainless steel outer drum layer outward, and gap between urceolus and external diameter is 5mm.
8. according to the sapphire crystal growing furnace side screen described in claim 1 or 2, it is characterized in that: in described interior screen, be provided with one deck zirconia brick layer, described zirconia brick is of a size of thickness 30mm, height 47mm, internal diameter 30mm, external diameter 60mm, inner circle arc length 5 π mm, cylindrical arc length 11 π mm.
9. according to the sapphire crystal growing furnace side screen described in claim 1 or 2, it is characterized in that: in described interior screen, be provided with one deck tungsten layer, thickness is 3～7mm.
10. the preparation method of a sapphire crystal growing furnace side screen according to claim 1, it is characterized in that: according to existing fiberboard making method, the design requirements of shielding according to sapphire crystal growing furnace side is in specific mould, adopt vacuum forming to produce the wet base of the effigurate zirconium oxide fiber board of tool, after drying, sintering, obtain zirconium oxide fiber board blank, obtain having the zirconium oxide fiber board of specified shape and physicochemical property by surface finish, cutting machine processing.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105948739A (en) * | 2016-04-28 | 2016-09-21 | 郑州方铭高温陶瓷新材料有限公司 | Yttria-zirconia sosoloid ceramics for temperature field of ultrahigh-temperature crystal growing furnace and preparation method for yttria-zirconia sosoloid ceramics |
| WO2019144804A1 (en) * | 2018-01-24 | 2019-08-01 | 中国科学院上海硅酸盐研究所 | Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal |
| CN111188091A (en) * | 2020-02-17 | 2020-05-22 | 山东大学 | Thermal field for resistance method aluminum nitride crystal growth furnace and assembling method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103422162A (en) * | 2013-09-03 | 2013-12-04 | 无锡鼎晶光电科技有限公司 | Single crystal furnace thermal field structure for square sapphire generation |
| CN103451724A (en) * | 2013-08-28 | 2013-12-18 | 苏州巍迩光电科技有限公司 | Thermal insulation structure with adjustable cold core for growth of sapphire single crystals by virtue of kyropoulos method |
| CN203462168U (en) * | 2013-05-20 | 2014-03-05 | 无锡鼎晶光电科技有限公司 | Energy-saving type kyropoulos-method sapphire crystal growth furnace thermal field structure |
| CN103643291A (en) * | 2013-11-23 | 2014-03-19 | 中山兆龙光电科技有限公司 | Single crystal furnace heat shield and preparation method thereof |
-
2014
- 2014-07-22 CN CN201410350961.5A patent/CN104073878A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203462168U (en) * | 2013-05-20 | 2014-03-05 | 无锡鼎晶光电科技有限公司 | Energy-saving type kyropoulos-method sapphire crystal growth furnace thermal field structure |
| CN103451724A (en) * | 2013-08-28 | 2013-12-18 | 苏州巍迩光电科技有限公司 | Thermal insulation structure with adjustable cold core for growth of sapphire single crystals by virtue of kyropoulos method |
| CN103422162A (en) * | 2013-09-03 | 2013-12-04 | 无锡鼎晶光电科技有限公司 | Single crystal furnace thermal field structure for square sapphire generation |
| CN103643291A (en) * | 2013-11-23 | 2014-03-19 | 中山兆龙光电科技有限公司 | Single crystal furnace heat shield and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105948739A (en) * | 2016-04-28 | 2016-09-21 | 郑州方铭高温陶瓷新材料有限公司 | Yttria-zirconia sosoloid ceramics for temperature field of ultrahigh-temperature crystal growing furnace and preparation method for yttria-zirconia sosoloid ceramics |
| CN105948739B (en) * | 2016-04-28 | 2019-06-21 | 郑州方铭高温陶瓷新材料有限公司 | High-purity yttrium zirconium solid solution ceramics and preparation method thereof for superhigh temperature crystal growing furnace thermal field |
| WO2019144804A1 (en) * | 2018-01-24 | 2019-08-01 | 中国科学院上海硅酸盐研究所 | Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal |
| US11384451B2 (en) | 2018-01-24 | 2022-07-12 | Anhui Weixin Changjiang Semiconductor Material Co., Ltd. | Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal |
| CN111188091A (en) * | 2020-02-17 | 2020-05-22 | 山东大学 | Thermal field for resistance method aluminum nitride crystal growth furnace and assembling method thereof |
| CN111188091B (en) * | 2020-02-17 | 2021-09-03 | 山东大学 | Thermal field for resistance method aluminum nitride crystal growth furnace and assembling method thereof |
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