CN204138819U - Kyropoulos sapphire single crystal growth furnace insulation side screen - Google Patents
Kyropoulos sapphire single crystal growth furnace insulation side screen Download PDFInfo
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- CN204138819U CN204138819U CN201420525502.1U CN201420525502U CN204138819U CN 204138819 U CN204138819 U CN 204138819U CN 201420525502 U CN201420525502 U CN 201420525502U CN 204138819 U CN204138819 U CN 204138819U
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- side screen
- insulation side
- single crystal
- crystal growth
- growth furnace
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Abstract
The utility model relates to kyropoulos sapphire single crystal growth furnace, particularly relates to a kind of kyropoulos sapphire single crystal growth furnace insulation side screen.This insulation side screen is arranged between well heater and stainless steel outer steel shell, and insulation side screen comprises internal layer tungsten screen and outer oxide zirconium fiber thermal insulation brick layer.The design of this insulation side screen, makes system have lighter quality, better heat insulation effect, and the axis in crystal and radial symmetry gradient reduce, and reduce the thermal stresses in crystal and dislocation desity simultaneously, reach reduction power consumption, improve the effect of crystal mass.
Description
Technical field
The utility model relates to kyropoulos sapphire single crystal growth furnace, particularly relates to a kind of kyropoulos sapphire single crystal growth furnace insulation side screen.
background technology:
Kyropoulos method is by Kyropouls in nineteen twenty-six utility model, and its growing principle and technical characterstic are: crystal raw material is put into resistant to elevated temperatures crucible heat fused, and adjustment temperature field in furnace, makes melt top be in the state of a little higher than fusing point; Make the seed crystal contact melting liquid level on seed rod, after its surface is slightly molten, reduces surface temperature to fusing point, lift and rotate seed rod, make melt top be in supercooled state and crystallization on seed crystal, in the process constantly lifted, grow cylinder crystal.
Kyropoulos is similar with the principle of Czochralski grown crystal, but the sapphire crystal quality that kyropoulos grows is higher, from technique, Czochralski grown process comprises seeding, shouldering, isometrical and receive the stage such as shoulder, and the above-mentioned stage all needs constantly to lift; The crystal growth of kyropoulos and annealing process are all carried out in crucible, and crystal does not carry draw-out crucible, and sapphire crystal similarly is grow from melt; Seed crystal lifting rotating in seeding, shouldering process in kyropoulos growth technique, and stop the rotation at isodiametric growth stage seed crystal and just carry out trace according to practical situation and promote; In fact kyropoulos crystal growth and annealing process are all carried out in crucible, and crystal does not carry draw-out crucible, and therefore warm field easily controls, and crystal quality is higher.
It is as substrate material that sapphire one of is mainly applied, and preparing the sapphire main method of substrate material is kyropoulos.
The fusing point of sapphire crystal is about 2050 DEG C, and kyropoulos is one of growth method of at present most main flow, and the key factor affecting kyropoulos growing sapphire monocrystalline quality is exactly the distribution of thermal field in body of heater.So under 2050 DEG C of such hot conditionss, the selection of insulation side screen material and the design of structure particularly important.
Main or molybdenum multilayer screen, tungsten metallic multilayer screen and tungsten metal two kinds of multilayer screens the combination of the insulation side screen of kyropoulos growing large-size sapphire single-crystal conventional is at present formed.This kind of insulation side main vacuum effect by layer and interlayer of screen reaches heat insulation effect, but tungsten and molybdenum material itself is as metallic substance, its heat insulation effect is poor, heterogeneity phantom is uneven, and molybdenum shield can volatilize a lot of impurity under high temperature, these factors will cause that crystal growth energy consumption is large, lattice defect is too much, and high cost.
Utility model content
The technical problems to be solved in the utility model is, the kyropoulos sapphire single crystal growth furnace insulation side screen provide a kind of and can improve crystal yield rate, reducing single crystal average power consumption.
The technical scheme that the utility model solves the employing of described problem is:
A kyropoulos sapphire single crystal growth furnace insulation side screen, is arranged between well heater and outer steel shell, and insulation side screen internal layer is tungsten screen, and skin is Zirconium oxide fibre insulating brick-layer.
Adopt the utility model of technique scheme, compared with prior art, the beneficial effect reached is:
System has better heat insulation effect, reduces the watt consumption of single crystal, and the axis in crystal and radial symmetry gradient reduce, and reduce the thermal stresses in crystal and dislocation desity simultaneously.
As preferably, the utility model further technical scheme is:
Described tungsten screen is the double-deck tungsten cylinder be rolled into by the leaf of dual-layer Parallel.
The thickness of described leaf is 0.5-2.5mm, and the distance between two-layer leaf is 1-5mm.
Described Zirconium oxide fibre insulating brick-layer is by the cylindrical shell of the brick one-tenth of double-deck Zirconium oxide fibre.
The thickness of described mono-layer oxidized zirconium fiber brick is 20-40mm.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment;
Fig. 2 is tungsten screen side-view in Fig. 1;
Fig. 3 is tungsten screen vertical view in Fig. 2;
Fig. 4 is Zirconium oxide fibre insulating brick-layer side-view in Fig. 1;
Fig. 5 is Zirconium oxide fibre insulating brick-layer vertical view in Fig. 1;
In figure: crucible 1, well heater 2, tungsten screen 3, Zirconium oxide fibre insulating brick-layer 4, outer steel shell 5, outer tungsten cylinder 31, internal layer tungsten cylinder 32, D2 tantalum nail 33, outer oxide zirconium fiber brick 41, internal layer Zirconium oxide fibre brick 42.
Embodiment
Below by way of accompanying drawing illustrated embodiment in detail the utility model is described in detail, the cited case is only for clearly illustrating the technical solution of the utility model, and and unrestricted protection domain of the present utility model.
See Fig. 1, kyropoulos sapphire single crystal growth furnace insulation side screen, is arranged between well heater 2 and outer steel shell 5, and insulation side screen internal layer is tungsten screen 3, and skin is Zirconium oxide fibre insulating brick-layer 4.
See Fig. 2, Fig. 3, the double-deck tungsten cylinder that tungsten screen 3 is made up of outer tungsten cylinder 31, internal layer tungsten cylinder 32, this double-deck tungsten cylinder is rolled into by the leaf of dual-layer Parallel, every layer of leaf couples together by monolithic leaf, monolithic leaf junction intersects for 40mm, composition rectangle, be highly 900mm, the thickness of leaf is 1.5mm; Tungsten cylinder uses D2 tantalum nail 33 riveted joint fixing, fixes in the middle of two-layer tungsten cylinder with 16 tungsten filament buckles, is spaced apart 22.5 ° between two buckles, is spaced apart 5mm between two-layer tungsten cylinder (leaf).
See Fig. 4, Fig. 5, Zirconium oxide fibre insulating brick-layer 4 is the double-deck Zirconium oxide fibre brick cylindrical shells be built into by outer oxide zirconium fiber brick 41, internal layer Zirconium oxide fibre brick 42, the thickness that mono-layer oxidized zirconium fiber turns is 30mm, and double-deck Zirconium oxide fibre brick cylindrical shell height is 860mm.
Insulation side screen structure described in the present embodiment is particularly useful for kyropoulos growing high-temp oxide crystal.
Claims (5)
1. a kyropoulos sapphire single crystal growth furnace insulation side screen, be arranged between well heater and stainless steel outer steel shell, it is characterized in that, insulation side screen internal layer is tungsten screen, and skin is Zirconium oxide fibre insulating brick-layer.
2., according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 1, it is characterized in that, described tungsten screen is the double-deck tungsten cylinder be rolled into by the leaf of dual-layer Parallel.
3., according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 2, it is characterized in that, the thickness of described leaf is 0.5-2.5mm, and the distance between two-layer leaf is 1-5mm.
4., according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 1, it is characterized in that, described Zirconium oxide fibre insulating brick-layer is by the cylindrical shell of the brick one-tenth of double-deck Zirconium oxide fibre.
5., according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 4, it is characterized in that, the thickness of described Zirconium oxide fibre brick is 20-40mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420525502.1U CN204138819U (en) | 2014-09-15 | 2014-09-15 | Kyropoulos sapphire single crystal growth furnace insulation side screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420525502.1U CN204138819U (en) | 2014-09-15 | 2014-09-15 | Kyropoulos sapphire single crystal growth furnace insulation side screen |
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| CN204138819U true CN204138819U (en) | 2015-02-04 |
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| CN201420525502.1U Expired - Fee Related CN204138819U (en) | 2014-09-15 | 2014-09-15 | Kyropoulos sapphire single crystal growth furnace insulation side screen |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178813A (en) * | 2014-09-15 | 2014-12-03 | 同方国芯电子股份有限公司 | Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen |
| CN106119962A (en) * | 2016-02-03 | 2016-11-16 | 江苏浩瀚蓝宝石科技有限公司 | The Performance comparision analysis of kyropoulos sapphire crystal furnace difference heat protection screen material |
| CN107460548A (en) * | 2016-06-02 | 2017-12-12 | 济南瑰宝新材料有限公司 | A kind of composite metal coated insulation construction of Zirconium oxide fibre product |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
-
2014
- 2014-09-15 CN CN201420525502.1U patent/CN204138819U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178813A (en) * | 2014-09-15 | 2014-12-03 | 同方国芯电子股份有限公司 | Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen |
| CN106119962A (en) * | 2016-02-03 | 2016-11-16 | 江苏浩瀚蓝宝石科技有限公司 | The Performance comparision analysis of kyropoulos sapphire crystal furnace difference heat protection screen material |
| CN107460548A (en) * | 2016-06-02 | 2017-12-12 | 济南瑰宝新材料有限公司 | A kind of composite metal coated insulation construction of Zirconium oxide fibre product |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170203 Address after: 064100 Yutian Hebei Xin Xing Industrial Park Patentee after: TANGSHAN GUOXIN JINGYUAN ELECTRONICS CO., LTD. Patentee after: Hebei University of Technology Address before: 064100 Yutian County, Hebei Province, no end of West Street, No. 3129, No. Patentee before: Tongfang Guoxin Electronics Co., Ltd. Patentee before: Hebei University of Technology |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150204 Termination date: 20170915 |