CN104178813A - Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen - Google Patents
Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen Download PDFInfo
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- CN104178813A CN104178813A CN201410465267.8A CN201410465267A CN104178813A CN 104178813 A CN104178813 A CN 104178813A CN 201410465267 A CN201410465267 A CN 201410465267A CN 104178813 A CN104178813 A CN 104178813A
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Abstract
The invention relates to a Kyropoulos-process sapphire single-crystal growth furnace, particularly a Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen. The thermal-insulation side screen is arranged between a heater and a stainless steel housing, and comprises an inner-layer tungsten screen and an outer-layer zirconium dioxide fiber thermal-insulation brick layer. Due to the design of the thermal-insulation side screen, the system has the advantages of lighter weight, better thermal-insulation effect and smaller axial and radial temperature gradient in the crystal, reduces the thermal stress and dislocation density in the crystal, and achieves the effects of reducing the power consumption and improving the crystal quality.
Description
Technical field
The present invention relates to kyropoulos sapphire single crystal growth furnace, relate in particular to a kind of kyropoulos sapphire single crystal growth furnace insulation side screen.
background technology:
Kyropoulos method is by Kyropouls in nineteen twenty-six invention, and its growing principle and technical characterstic are: crystal raw material is put into resistant to elevated temperatures crucible heat fused, adjust temperature field in furnace, make the state of melt top in a little higher than fusing point; Make seed crystal on seed rod contact melting liquid level, after its surface is slightly molten, reduce surface temperature to fusing point, lift and rotate seed rod, make melt top in supercooled state and crystallization on seed crystal, in the process constantly lifting, grow cylinder crystal.
The principle of kyropoulos and Czochralski grown crystal is similar, but the sapphire crystal quality that kyropoulos grows is higher, from technique, Czochralski grown process comprises seeding, shouldering, isometrical and receive the stages such as shoulder, and the above-mentioned stage all needs constantly to have lifted; Crystal growth and the annealing process of kyropoulos are all carried out in crucible, and crystal is not carried draw-out crucible, and sapphire crystal similarly is to grow from melt; In kyropoulos growth technique, seed crystal lifting rotation in seeding, shouldering process, just carries out trace lifting according to practical situation and stop the rotation at isodiametric growth stage seed crystal; In fact the growth of kyropoulos crystal and annealing process are all carried out in crucible, and crystal is not carried draw-out crucible, and therefore temperature is easily controlled, and crystal quality is higher.
It is as substrate material that sapphire one of is mainly applied, and preparing the sapphire main method of substrate material is kyropoulos.
The fusing point of sapphire crystal is about 2050 ℃, and kyropoulos is one of growth method of at present main flow, and a key factor that affect kyropoulos growing sapphire monocrystalline quality is exactly the distribution of the interior thermal field of body of heater.So under 2050 ℃ of such hot conditionss, the selection of insulation side screen material and the design of structure are particularly important.
Constituting of the main still molybdenum multilayer of insulation side screen screen, tungsten metallic multilayer screen and two kinds of multilayer screens of tungsten metal of at present conventional kyropoulos growing large-size sapphire single-crystal.The main layer that leans on of this class insulation side screen reaches heat insulation effect with the vacuum effect of interlayer, but tungsten and molybdenum material itself is as metallic substance, its heat insulation effect is poor, thermal field skewness, and under high temperature, molybdenum shield can volatilize a lot of impurity, these factors will cause that crystal growth energy consumption is large, lattice defect is too much, and high cost.
Summary of the invention
The technical problem to be solved in the present invention is, provides a kind of and can improve crystal yield rate, reduces the kyropoulos sapphire single crystal growth furnace insulation side screen of single crystal average power consumption.
The technical scheme that the present invention solves described problem employing is:
A kind of kyropoulos sapphire single crystal growth furnace insulation side screen, is arranged between well heater and outer steel shell, and insulation side screen internal layer is tungsten screen, and skin is Zirconium oxide fibre insulating brick-layer.
Adopt the present invention of technique scheme, compared with prior art, the beneficial effect reaching is:
System has better heat insulation effect, has reduced the watt consumption of single crystal, and the axial and radial symmetry gradient in crystal reduces, and has reduced thermal stresses and the dislocation desity in crystal simultaneously.
As preferably, the present invention further technical scheme is:
Described tungsten screen is the double-deck tungsten cylinder being rolled into by the parallel tungsten sheet of bilayer.
The thickness of described tungsten sheet is 0.5-2.5mm, and the distance between two-layer tungsten sheet is 1-5mm.
Described Zirconium oxide fibre insulating brick-layer is the cylindrical shell by the brick one-tenth of double-deck Zirconium oxide fibre.
The thickness of described mono-layer oxidized zirconium fiber brick is 20-40mm.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention;
Fig. 2 is tungsten screen side-view in Fig. 1;
Fig. 3 is tungsten screen vertical view in Fig. 2;
Fig. 4 is Zirconium oxide fibre insulating brick-layer side-view in Fig. 1;
Fig. 5 is Zirconium oxide fibre insulating brick-layer vertical view in Fig. 1;
In figure: crucible 1, well heater 2, tungsten screen 3, Zirconium oxide fibre insulating brick-layer 4, outer steel shell 5, outer tungsten cylinder 31, internal layer tungsten cylinder 32, D2 tantalum nail 33, outer oxide zirconium fiber brick 41, internal layer Zirconium oxide fibre brick 42.
Embodiment
Below by accompanying drawing illustrated embodiment in detail the present invention is described in detail, the cited case is only for technical scheme of the present invention is more clearly described, and not limits the scope of the invention.
Referring to Fig. 1, kyropoulos sapphire single crystal growth furnace insulation side screen, is arranged between well heater 2 and outer steel shell 5, and insulation side screen internal layer is tungsten screen 3, and skin is Zirconium oxide fibre insulating brick-layer 4.
Referring to Fig. 2, Fig. 3, the tungsten screen 3 double-deck tungsten cylinders that formed by outer tungsten cylinder 31, internal layer tungsten cylinder 32, this bilayer tungsten cylinder is rolled into by the parallel tungsten sheet of bilayer, every layer of tungsten sheet couples together by monolithic tungsten sheet, monolithic tungsten sheet junction intersects for 40mm, forming rectangle, is highly 900mm, and the thickness of tungsten sheet is 1.5mm; Tungsten cylinder is used 33 riveted joints of D2 tantalum nail fixing, in the middle of two-layer tungsten cylinder, with 16 tungsten filament buckles, fixes, and between two buckles, is spaced apart 22.5 °, between two-layer tungsten cylinder (tungsten sheet), is spaced apart 5mm.
Referring to Fig. 4, Fig. 5, Zirconium oxide fibre insulating brick-layer 4 is the double-deck Zirconium oxide fibre brick cylindrical shells that are built into by outer oxide zirconium fiber brick 41, internal layer Zirconium oxide fibre brick 42, the thickness that mono-layer oxidized zirconium fiber turns is 30mm, and double-deck Zirconium oxide fibre brick cylindrical shell height is 860mm.
Insulation side screen structure described in the present embodiment is particularly useful for kyropoulos growing high-temp oxide crystal.
Claims (5)
1. a kyropoulos sapphire single crystal growth furnace insulation side screen, is arranged between well heater and stainless steel outer steel shell, it is characterized in that, insulation side screen internal layer is tungsten screen, and skin is Zirconium oxide fibre insulating brick-layer.
2. according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 1, it is characterized in that, described tungsten screen is the double-deck tungsten cylinder being rolled into by the parallel tungsten sheet of bilayer.
3. according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 2, it is characterized in that, the thickness of described tungsten sheet is 0.5-2.5mm, and the distance between two-layer tungsten sheet is 1-5mm.
4. according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 1, it is characterized in that, described Zirconium oxide fibre insulating brick-layer is the cylindrical shell by the brick one-tenth of double-deck Zirconium oxide fibre.
5. according to the kyropoulos sapphire single crystal growth furnace insulation side screen described in claim 4, it is characterized in that, the thickness of described mono-layer oxidized zirconium fiber brick is 20-40mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410465267.8A CN104178813A (en) | 2014-09-15 | 2014-09-15 | Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen |
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| CN201410465267.8A CN104178813A (en) | 2014-09-15 | 2014-09-15 | Kyropoulos-process sapphire single-crystal growth furnace thermal-insulation side screen |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603510A (en) * | 2016-02-03 | 2016-05-25 | 江苏浩瀚蓝宝石科技有限公司 | Single crystal growth furnace |
| CN107460548A (en) * | 2016-06-02 | 2017-12-12 | 济南瑰宝新材料有限公司 | A kind of composite metal coated insulation construction of Zirconium oxide fibre product |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
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| CN204138819U (en) * | 2014-09-15 | 2015-02-04 | 同方国芯电子股份有限公司 | Kyropoulos sapphire single crystal growth furnace insulation side screen |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603510A (en) * | 2016-02-03 | 2016-05-25 | 江苏浩瀚蓝宝石科技有限公司 | Single crystal growth furnace |
| CN107460548A (en) * | 2016-06-02 | 2017-12-12 | 济南瑰宝新材料有限公司 | A kind of composite metal coated insulation construction of Zirconium oxide fibre product |
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
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Application publication date: 20141203 |