CN202246850U - 等离子体反应器 - Google Patents

等离子体反应器 Download PDF

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Publication number
CN202246850U
CN202246850U CN2011201396629U CN201120139662U CN202246850U CN 202246850 U CN202246850 U CN 202246850U CN 2011201396629 U CN2011201396629 U CN 2011201396629U CN 201120139662 U CN201120139662 U CN 201120139662U CN 202246850 U CN202246850 U CN 202246850U
Authority
CN
China
Prior art keywords
substrate holder
relief outlet
plasma reactor
gas barrier
reactor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011201396629U
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English (en)
Chinese (zh)
Inventor
A.萨拉巴斯
A.A.H.塔哈
D.乔达里
M.克林德沃特
C.埃勒特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Solar AG
Original Assignee
Oerlikon Solar IP AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Solar IP AG filed Critical Oerlikon Solar IP AG
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Publication of CN202246850U publication Critical patent/CN202246850U/zh
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN2011201396629U 2010-05-06 2011-05-05 等离子体反应器 Expired - Fee Related CN202246850U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33188710P 2010-05-06 2010-05-06
US61/331887 2010-05-06

Publications (1)

Publication Number Publication Date
CN202246850U true CN202246850U (zh) 2012-05-30

Family

ID=44148910

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011201396629U Expired - Fee Related CN202246850U (zh) 2010-05-06 2011-05-05 等离子体反应器
CN2011101152544A Pending CN102237247A (zh) 2010-05-06 2011-05-05 等离子体反应器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2011101152544A Pending CN102237247A (zh) 2010-05-06 2011-05-05 等离子体反应器

Country Status (5)

Country Link
US (1) US20130052369A1 (https=)
EP (1) EP2567392A1 (https=)
JP (1) JP5927619B2 (https=)
CN (2) CN202246850U (https=)
WO (1) WO2011138239A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114093739A (zh) * 2020-08-24 2022-02-25 中微半导体设备(上海)股份有限公司 一种气体流量调节装置和调节方法及等离子体处理装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137521A (zh) * 2011-12-02 2013-06-05 中国科学院微电子研究所 一种进气装置
TWI480417B (zh) * 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
US20150087108A1 (en) * 2013-09-26 2015-03-26 Tel Solar Ag Process, Film, and Apparatus for Top Cell for a PV Device
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
KR20180074671A (ko) * 2015-08-31 2018-07-03 쥐-레이 스위츨란드 에스에이 모놀리식 cmos 통합된 픽셀 검출기가 구비된 광자 계측용 콘빔 ct 장치

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Publication number Priority date Publication date Assignee Title
FR2589168B1 (fr) 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
JPH0776781A (ja) * 1993-09-10 1995-03-20 Matsushita Electric Ind Co Ltd プラズマ気相成長装置
US6228438B1 (en) 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
KR101033123B1 (ko) * 2004-06-30 2011-05-11 엘지디스플레이 주식회사 액정표시장치의 제조를 위한 챔버형 장치
JP5027667B2 (ja) 2004-11-24 2012-09-19 エリコン・ソーラー・アクチェンゲゼルシャフト，トリュープバッハ 超大面積基板用真空処理チャンバ
JP2006303309A (ja) * 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
KR101204614B1 (ko) * 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
CN101798086B (zh) * 2009-01-20 2013-07-24 三菱综合材料株式会社 三氯硅烷制造装置以及三氯硅烷制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114093739A (zh) * 2020-08-24 2022-02-25 中微半导体设备(上海)股份有限公司 一种气体流量调节装置和调节方法及等离子体处理装置
CN114093739B (zh) * 2020-08-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种气体流量调节装置和调节方法及等离子体处理装置

Also Published As

Publication number Publication date
US20130052369A1 (en) 2013-02-28
EP2567392A1 (en) 2013-03-13
CN102237247A (zh) 2011-11-09
JP2013527610A (ja) 2013-06-27
JP5927619B2 (ja) 2016-06-01
WO2011138239A1 (en) 2011-11-10

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: OERLIKON SOLAR AG

Free format text: FORMER NAME: OERLIKON SOLAR AG (TRUBBACH)

CP01 Change in the name or title of a patent holder

Address after: Swiss Te Lui Bach

Patentee after: Oerlikon Solar AG, Truebbach

Address before: Swiss Te Lui Bach

Patentee before: Oerlikon Solar IP AG. Truebbach

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120530

Termination date: 20170505