CN101855707A - 等离子处理装置 - Google Patents
等离子处理装置 Download PDFInfo
- Publication number
- CN101855707A CN101855707A CN200880115393A CN200880115393A CN101855707A CN 101855707 A CN101855707 A CN 101855707A CN 200880115393 A CN200880115393 A CN 200880115393A CN 200880115393 A CN200880115393 A CN 200880115393A CN 101855707 A CN101855707 A CN 101855707A
- Authority
- CN
- China
- Prior art keywords
- plasma
- antenna
- plasma treatment
- treatment appts
- vacuum tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-296118 | 2007-11-14 | ||
JP2007296118A JP5329796B2 (ja) | 2007-11-14 | 2007-11-14 | プラズマ処理装置 |
PCT/JP2008/003288 WO2009063629A1 (ja) | 2007-11-14 | 2008-11-12 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101855707A true CN101855707A (zh) | 2010-10-06 |
CN101855707B CN101855707B (zh) | 2013-09-25 |
Family
ID=40638485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801153933A Active CN101855707B (zh) | 2007-11-14 | 2008-11-12 | 等离子处理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8931433B2 (zh) |
EP (1) | EP2216804A4 (zh) |
JP (1) | JP5329796B2 (zh) |
CN (1) | CN101855707B (zh) |
TW (1) | TWI463923B (zh) |
WO (1) | WO2009063629A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103702504A (zh) * | 2014-01-15 | 2014-04-02 | 北京吉兆源科技有限公司 | 一种平面等离子发生器 |
CN104716424A (zh) * | 2013-12-11 | 2015-06-17 | 斯伊恩股份有限公司 | 天线罩及使用该天线罩的等离子产生装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011059750A2 (en) * | 2009-10-28 | 2011-05-19 | Applied Materials, Inc. | Chamber for pecvd |
JP6999368B2 (ja) * | 2017-11-01 | 2022-01-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0160528U (zh) * | 1987-10-12 | 1989-04-17 | ||
JPH0239422A (ja) * | 1988-07-28 | 1990-02-08 | Toshiba Corp | Cvd反応容器における膜脱落防止装置 |
US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
JP3049932B2 (ja) * | 1992-03-31 | 2000-06-05 | 株式会社島津製作所 | プラズマcvd装置 |
JPH0633246A (ja) * | 1992-07-21 | 1994-02-08 | Canon Inc | 堆積膜形成方法および堆積膜形成装置 |
JP2641390B2 (ja) * | 1994-05-12 | 1997-08-13 | 日本電気株式会社 | プラズマ処理装置 |
US6155199A (en) * | 1998-03-31 | 2000-12-05 | Lam Research Corporation | Parallel-antenna transformer-coupled plasma generation system |
JP3836636B2 (ja) | 1999-07-27 | 2006-10-25 | 独立行政法人科学技術振興機構 | プラズマ発生装置 |
KR100732148B1 (ko) * | 1999-09-09 | 2007-06-25 | 이시카와지마-하리마 주고교 가부시키가이샤 | 내부 전극 방식의 플라즈마 처리 장치 및 플라즈마 처리방법 |
JP2001297899A (ja) * | 2000-04-13 | 2001-10-26 | Tohoku Techno Arch Co Ltd | プラズマ処理装置 |
US6755150B2 (en) * | 2001-04-20 | 2004-06-29 | Applied Materials Inc. | Multi-core transformer plasma source |
US7481904B2 (en) * | 2002-03-18 | 2009-01-27 | Tokyo Electron Limited | Plasma device |
JP2004006537A (ja) * | 2002-05-31 | 2004-01-08 | Ishikawajima Harima Heavy Ind Co Ltd | 薄膜形成方法及び装置並びに太陽電池の製造方法並びに太陽電池 |
JP3970815B2 (ja) * | 2002-11-12 | 2007-09-05 | シャープ株式会社 | 半導体素子製造装置 |
JP5309426B2 (ja) * | 2006-03-29 | 2013-10-09 | 株式会社Ihi | 微結晶シリコン膜形成方法及び太陽電池 |
-
2007
- 2007-11-14 JP JP2007296118A patent/JP5329796B2/ja active Active
-
2008
- 2008-11-12 CN CN2008801153933A patent/CN101855707B/zh active Active
- 2008-11-12 EP EP08848700.4A patent/EP2216804A4/en not_active Withdrawn
- 2008-11-12 US US12/742,604 patent/US8931433B2/en active Active
- 2008-11-12 WO PCT/JP2008/003288 patent/WO2009063629A1/ja active Application Filing
- 2008-11-13 TW TW097143834A patent/TWI463923B/zh active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716424A (zh) * | 2013-12-11 | 2015-06-17 | 斯伊恩股份有限公司 | 天线罩及使用该天线罩的等离子产生装置 |
CN103702504A (zh) * | 2014-01-15 | 2014-04-02 | 北京吉兆源科技有限公司 | 一种平面等离子发生器 |
CN103702504B (zh) * | 2014-01-15 | 2016-08-24 | 北京吉兆源科技有限公司 | 一种平面等离子发生器 |
Also Published As
Publication number | Publication date |
---|---|
US8931433B2 (en) | 2015-01-13 |
EP2216804A1 (en) | 2010-08-11 |
TW200939903A (en) | 2009-09-16 |
TWI463923B (zh) | 2014-12-01 |
CN101855707B (zh) | 2013-09-25 |
JP2009123906A (ja) | 2009-06-04 |
EP2216804A4 (en) | 2016-01-20 |
WO2009063629A1 (ja) | 2009-05-22 |
US20100263797A1 (en) | 2010-10-21 |
JP5329796B2 (ja) | 2013-10-30 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: EVATECH CO., LTD. Effective date: 20120611 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120611 Address after: Kyoto Japan Applicant after: Emd Corporation Address before: Kyoto Japan Applicant before: Emd Corporation Co-applicant before: Evatech Co., Ltd. |
|
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Shiga Applicant after: Emd Corporation Address before: Kyoto Japan Applicant before: Emd Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |