CN202084575U - Large-power LED (Light-emitting Diode) packaging substrate - Google Patents
Large-power LED (Light-emitting Diode) packaging substrate Download PDFInfo
- Publication number
- CN202084575U CN202084575U CN2011201442203U CN201120144220U CN202084575U CN 202084575 U CN202084575 U CN 202084575U CN 2011201442203 U CN2011201442203 U CN 2011201442203U CN 201120144220 U CN201120144220 U CN 201120144220U CN 202084575 U CN202084575 U CN 202084575U
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- China
- Prior art keywords
- base material
- heat conducting
- crystal
- power led
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The utility model discloses a large-power LED (Light-emitting Diode) packaging substrate which comprises a heat conducting base material, and a single-side base material overlapped on the heat conducting base material. A grain crystal demising hole is arranged in the single-side base material; a crystal solidifying area for welding grain crystal on the crystal solidifying area is arranged at the position of the heat conducting base material corresponding to the grain crystal demising hole; and a silver plating layer is plated on the crystal solidifying area. The grain crystal can be tightened on a heat conducting substrate so as to greatly improve the reliability of the grain crystal; meanwhile, heat generated by an LED can be quickly conducted to the heat conducting base material so that the heat conducting base material has the characteristic of good heat conducting performance.
Description
Technical field
The utility model relates to the LED encapsulation field, relates to a kind of high-power LED encapsulation substrate in particular.
Background technology
Along with the high speed development of society, energy-saving and emission-reduction have become theme.LED as light emitting semiconductor device, it can allow the very little electric current that passes through almost all change into visible light, and have high light efficiency, high energy-conservation, photochromic many, safe, characteristic such as the life-span long, respond fast and operating cost is low, so LED is at present just by wide popularization and application.
At present, low-power LED device mainly is with the solid crystalline substance of silver slurry or Reflow Soldering the pin of crystal grain to be fixed on the printed circuit board, the substrate medium layer of this printed circuit board generally all is the ceramic powders that has added organic material, its thermal conductivity generally only is 2.3w/m.k, promptly has the low and high problem of thermal resistance coefficient of thermal conductivity, simultaneously because silver slurry non-refractory is aging, so it is heat sink also to exist heat energy effectively to pass to.
In view of this, the inventor has this case to produce at the above-mentioned defective further investigation of existing LED device when encapsulating then.
The utility model content
The purpose of this utility model is to provide a kind of high-power LED encapsulation substrate, with the problem that solves poor thermal conductivity in the prior art and cause poor reliability because of silver slurry non-refractory.
In order to reach above-mentioned purpose, solution of the present utility model is:
A kind of high-power LED encapsulation substrate, wherein, comprise heat conducting base material and the single face base material that is laminated on the heat conducting base material, has the crystal grain resigning hole on this single face base material, this heat conducting base material is formed with for crystal grain welding crystal bonding area territory thereon corresponding to crystal grain resigning hole place, electroplates on this crystal bonding area territory to be formed with silver coating.
Further, also be formed with on this single face base material for the pad that links to each other with crystal grain.
Further, this heat-conducting substrate adopts the red copper substrate.
Further, this single face base material adopts CCL or FCCL.
After adopting said structure, contact-making surface coating can be formed earlier on the bottom of this crystal grain, this contact-making surface coating specifically can adopt pure tin (Sn) or golden tin (Au-Sn) alloy, can adopt the mode of eutectic welding thus, when heat conducting base material is heated to suitable eutectic temperature by Reflow Soldering, silver element in this silver coating is penetrated into the gold-tin alloy layer in the crystal grain, then can make thus the alloy-layer composition change and play the effect that improves fusing point, make the eutectic layer solidify and LED securely be welded on the heat-conducting substrate.Thus, the utility model can allow crystal grain be fastened on the heat-conducting substrate, promptly has the effect of good reliability, also can improve the thermal conductivity of LED simultaneously greatly.
Description of drawings
The structural representation of Fig. 1 a kind of high-power LED encapsulation substrate for the utility model relates to;
The method for making theory diagram of Fig. 2 a kind of high-power LED encapsulation substrate for the utility model relates to.
Among the figure:
Base plate for packaging 100 heat conducting base material 1
Crystal bonding area territory 11 silver coatings 12
Single face base material 2 crystal grain resigning holes 21
Contact-making surface coating 220.
Embodiment
In order further to explain the technical solution of the utility model, the utility model is elaborated below by specific embodiment.
As shown in Figure 1, a kind of high-power LED encapsulation substrate 100 that it relates to for the utility model, comprise heat conducting base material 1 and single face base material 2, this single face base material 2 is laminated on the heat conducting base material 1, has crystal grain resigning hole 21 on this single face base material 2, this heat conducting base material 1 is formed with crystal bonding area territory 11, this crystal bonding area territory 11 is corresponding to crystal grain resigning hole 21, specifically be to be up and down over against shape, this crystal bonding area territory 11 specifically provides space that crystal grain 200 is provided with and by this crystal bonding area territory 11 and link to each other with heat conducting base material 1, the heat that thereby LED can be produced conducts by heat conducting base material 1, also electroplates on this crystal bonding area territory 11 to be formed with silver coating 12.
Particularly, also be formed with pad 22 on this single face base material 2, can easily realize being electrically connected between crystal grain 200 and the single face base material 2, and then reach the effect of control LED work by this pad 22 and nation's alignment 210.This heat conducting base material 1 specifically can be selected the red copper substrate for use, and 2 of this single face base materials can adopt CCL or FCCL.
In addition, in order to realize the purpose of this utility model, the structure of this crystal grain 200 also needs to do corresponding adjustment, and the bottom of this crystal grain 200 needs to form earlier contact-making surface coating 220, and this contact-making surface coating 220 specifically can adopt pure tin (Sn) or golden tin (Au-Sn) alloy.
Thus, the utility model can adopt the mode of eutectic welding, when heat conducting base material 1 is heated to suitable eutectic temperature by Reflow Soldering, silver element in this silver coating 12 can be penetrated into the gold-tin alloy layer in the crystal grain 200, because the infiltration of silver element, make the composition of gold-tin alloy layer change to some extent,, and then make the eutectic layer solidify and LED securely is welded on the heat-conducting substrate because the change of composition can improve the fusing point of whole alloy.Thus, the utility model can allow crystal grain 200 be fastened on the heat-conducting substrate, promptly has the effect of good reliability, also can improve the thermal conductivity of LED simultaneously greatly.
As shown in Figure 2, in order to allow the LED base plate for packaging 100 of said structure can be realized that the utility model also discloses the method for making of this base plate for packaging 100 by the public, this method for making comprises the steps:
1., heat-conducting substrate is carried out preliminary treatment: heat-conducting substrate is carried out figure transfer, electrosilvering and stripping successively, thereby mold the heat-conducting substrate that satisfies the utility model requirement;
2., single face base material 2 is carried out preliminary treatment: single face base material 2 is carried out figure transfer and plating successively, and after pasting gum, machine-shaping goes out crystal grain resigning hole 21, and concrete the plating is the electronickelling gold, and 21 of this crystal grain resigning holes specifically are the mode moulding of adopting punching press;
3., will be through pretreated heat-conducting substrate and single face base material 2 combination laminations, and mold LED base plate for packaging 100 through silk-screen white oil and cutting successively.Preferably, step 3. in, after cutting, also comprise plasma treatment gold face and cut the operation of profile once more.
Preferably, the electrosilvering operation of this step in 1. only electroplated the crystal bonding area territory 11 of heat conducting base material 1, thereby satisfying under the condition of primary demand, also plays the effect of economical with materials.
Thus, adopt said method, can mold complete satisfactory LED base plate for packaging 100.
The foregoing description and graphic and non-limiting product form of the present utility model and style, any person of an ordinary skill in the technical field all should be considered as not breaking away from patent category of the present utility model to its suitable variation or modification of doing.
Claims (4)
1. high-power LED encapsulation substrate, it is characterized in that, comprise heat conducting base material and the single face base material that is laminated on the heat conducting base material, has the crystal grain resigning hole on this single face base material, this heat conducting base material is formed with for crystal grain welding crystal bonding area territory thereon corresponding to crystal grain resigning hole place, electroplates on this crystal bonding area territory to be formed with silver coating.
2. a kind of high-power LED encapsulation substrate as claimed in claim 1 is characterized in that, also is formed with on this single face base material for the pad that links to each other with crystal grain.
3. a kind of high-power LED encapsulation substrate as claimed in claim 1 is characterized in that, this heat-conducting substrate adopts the red copper substrate.
4. a kind of high-power LED encapsulation substrate as claimed in claim 1 is characterized in that, this single face base material adopts CCL or FCCL.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201442203U CN202084575U (en) | 2011-05-09 | 2011-05-09 | Large-power LED (Light-emitting Diode) packaging substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201442203U CN202084575U (en) | 2011-05-09 | 2011-05-09 | Large-power LED (Light-emitting Diode) packaging substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202084575U true CN202084575U (en) | 2011-12-21 |
Family
ID=45345196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201442203U Expired - Fee Related CN202084575U (en) | 2011-05-09 | 2011-05-09 | Large-power LED (Light-emitting Diode) packaging substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202084575U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214777A (en) * | 2011-05-09 | 2011-10-12 | 厦门市英诺尔电子科技有限公司 | High-power LED (light-emitting diode) packaging substrate and manufacturing method thereof |
| CN103322542A (en) * | 2013-07-11 | 2013-09-25 | 哈尔滨固泰电子有限责任公司 | Device for strengthening LED heat dissipation through welding and welding method |
-
2011
- 2011-05-09 CN CN2011201442203U patent/CN202084575U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214777A (en) * | 2011-05-09 | 2011-10-12 | 厦门市英诺尔电子科技有限公司 | High-power LED (light-emitting diode) packaging substrate and manufacturing method thereof |
| CN103322542A (en) * | 2013-07-11 | 2013-09-25 | 哈尔滨固泰电子有限责任公司 | Device for strengthening LED heat dissipation through welding and welding method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: XIAMEN INNOV ELECTRONICS TECH. CO., LTD. Free format text: FORMER NAME: XIAMEN CITY INNOV ELECTRONICS TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 361000, No. 101, No. 1 Xiang Xiang Road, torch hi tech Zone (Xiangan), Fujian, Xiamen Province Patentee after: Xiamen Innov Electronic Technology Co., Ltd. Address before: 361000 No. 1 Xiang Xiang Road, Torch Industrial Zone, Xiamen, Fujian, Xiangan Patentee before: Xiamen City Innov Electronics Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111221 Termination date: 20170509 |