CN202025711U - 喷头电极总成和用于喷头电极总成的垫圈 - Google Patents
喷头电极总成和用于喷头电极总成的垫圈 Download PDFInfo
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Abstract
本实用新型公开一种喷头电极总成的垫圈，其中喷头电极夹紧于衬板，所述垫圈包括导热导电材料组成的环形带和多个在其表面上的突出部，该环形带的外径小于该喷头电极的外径，各突出部的高度至少比该环形带厚度厚两倍。本实用新型还公开一种半导体基片处理中使用的等离子反应室的电极总成。该总成包括上部喷头电极，其通过一系列隔开的凸轮锁以机械方式贴附于衬板，并包括权利要求1所述的垫圈，被压缩在该喷头电极和该衬板之间、在距该喷头电极中心3到4英寸的位置。保护环围绕该衬板，并可移动到该保护环中开口与该衬板中开口对齐的位置，从而该凸轮锁可利用工具转动以释放从该电极上面延伸出的锁紧销。
Description
技术领域
本发明涉及等离子处理室的喷头电极总成，在该室中可制造半导体组件。
背景技术
反应性离子蚀刻系统通常由蚀刻室组成，该室中设有上部电极(或阳极)和下部电极(或阴极)。该阴极相对该阳极和该容器壁负偏置。该阴极相对该阳极和该容器壁负偏置。将化学反应气体(如CF4、CHF3、CClF3、HBr、Cl2和SF6及其混合物)与O2、N2、He或Ar一起被引入该蚀刻室，并保持在通常为毫托范围内的压强下。该上部电极设有一个或多个气孔，该孔允许气体通过该电极均匀地分散进该室。该阳极和该阴极之间建立的电场将分解该反应气体而形成等离子。该晶片的表面通过与该反应性离子的化学反应以及离子撞击该晶片表面的动量传递来蚀刻。该电极创建的电场将这些离子吸引到该阴极，使得离子在大体垂直的方向撞击该表面，从而该工艺产生轮廓分明的垂直蚀刻的侧壁。该蚀刻反应器电极往往通过将两个或多个不相似的构件利用机械相容和/或导热粘结剂粘合在一起来制造，从而可以有许多功能。
该上部电极是损耗部件，其必须定期更换。希望不使用粘结剂而将该上部电极贴附于该衬板以允许更换该上部电极。如果该上部电极以机械方式紧固于该衬板而不使用导热导电粘结剂，则希望凭借一个或多个垫圈而在该衬板和上部电极之间提供电气接触。具有 定位特征的垫圈的优点在于它们可不使用粘结剂安装在该上部电极上，以允许在清洁或者更换该上部电极过程中容易去除。
发明内容
本实用新型提供一种喷头电极总成的垫圈，其中喷头电极夹紧于衬板，所述垫圈包括导热导电材料组成的环形带和多个在其表面上的突出部，该环形带的外径小于该喷头电极的外径，各突出部的高度至少比该环形带厚度厚两倍。
其中该突出部包括两个圆柱形突出部，每个的直径是该环形带宽度的至少一半且厚度是该环形带厚度的至少四倍。该环形带是在多个硅酮橡胶层之间的铝箔层压板，该突出部粘性粘合于该环形带一侧。该多个突出部由两个隔开180°的圆柱形突出部组成。该环形带具有平的上部和下部表面，厚度为0.005至0.01英寸，该突出部是平的圆盘，厚度为0.02至0.04英寸，以及该突出部结合于该环形带一侧。该环形带外径为3至4英寸，内径为2至3英寸而宽度为0.2至0.4英寸。
本实用新型还提供一种喷头电极总成，包括：衬板，包括多个位于该衬板的外部部分的凸轮锁；喷头电极，直径超过12英寸，并包括由该喷头电极的上面和下面限定的中心部分和边缘部分，该上面包括延伸跨过该中心部分的平面，该下面由延伸跨过该中心部分的平的内部表面以及延伸跨过该边缘部分的阶梯状外部表面限定，该阶梯状外部表面包括限定该喷头电极的厚度增大的区域的环形平面；多个在该电极的中心部分中的气体出口，通过该出口工艺气体可传输至该喷头电极和下部电极之间的间隙，半导体基片支撑在该下部电极上，该上面的边缘部分中多个周向隔开的插口，该插口支撑与该衬板的凸轮锁啮合的向上延伸锁紧销，从而将该喷头电极 夹紧于该衬板；以及前述的垫圈，压缩在该喷头电极和该衬板之间，该喷头电极中凹处中的垫圈的突出部，该环形带防止该喷头电极的上面免于在该喷头电极的温度循环期间与该衬板的下面摩擦。
其中该突出部包括两个圆柱形突出部，每个的直径是该环形带宽度的至少一半，且厚度是该环形带厚度的至少四倍。该环形带是在多个硅酮橡胶层之间的铝箔层压板，该突出部粘性粘合于该环形带一侧。该多个突出部由两个隔开180°的圆柱形突出部组成。该环形带具有平的上部和下部表面，厚度为0.005至0.01英寸，该突出部是平的圆盘，厚度为0.02至0.04英寸，以及该突出部粘合于该环形带一侧。该环形带外径为3至4英寸，内径为2至3英寸而宽度为0.2至0.4英寸。该喷头电极总成，进一步包括该衬板和该喷头电极之间的气密层，该气密层位于气体通道的外侧，该喷头电极包括多晶硅和该衬板包括铝。
按照一个实施例，为喷头电极总成提供垫圈，在该总成中，单体阶梯状电极固定于衬板，该喷头电极总成包括电容耦合等离子处理室的上部电极。该阶梯状电极是圆板，该圆板的下面具有等离子暴露表面，上面有安装表面。该安装表面包括多个定位销凹处，构造为容纳设在衬板中的定位销孔匹配的图案排列的定位销，该板由凸轮锁保持为与其抵靠，且该板包括以与该衬板中的气体供应孔匹配的图案排列的工艺气体出口。该上面包括多个凹处，其容纳该垫圈上的定位特征。该安装表面的外部部分中多个周向隔开的腔室构造为将锁紧销容纳在其中，适于与凸轮锁配合以将该阶梯状电极卡紧于该衬板。
附图说明
图1示出形成具有保护环的上部电极的喷头电极总成的剖视图，该电极用于蚀刻基片的电容耦合等离子反应器。
图2A是用于在图1所示的反应器中固定阶梯状电极的示范性凸轮锁的三维表示。
图2B是图2A的示范性凸轮锁电极夹头的剖视图。
图3A-F示出图2A和2B的凸轮锁夹头中使用的示范性锁紧销的侧视图和装配图。
图4A-D示出图2A和2B的凸轮锁夹头中使用的示范性凸轮轴的侧视图和装配图。
图4E示出图4A-D的凸轮轴一部分的示范性切割路径(cutter-path)边缘的剖视图。
图5A示出具有阶梯状电极、衬板、热控板、保护环和顶板的喷头电极总成。
图5B示出修改的喷头电极的上面(upper face)的立体图，图5C示出修改的衬板的下面(lower face)的立体图。
图6A和6B是图5A的阶梯状电极的立体图。
图7是图5A的衬板的立体图。
图8是图5A没有该保护环的喷头电极总成的立体图。
图9是按照优选实施例的垫圈的仰视图。
图10是图9所示的垫圈的侧视图。
具体实施方式
集成电路芯片的制造通常开始于高纯度、单晶体半导体材料基片(如硅或锗)的薄的、抛光的片，称作“晶片”。每个晶片经受一系列物理和化学处理步骤，这些步骤在该晶片上形成各种不同的电路结构。在该制造工艺中，使用各种技术将多种不同的薄膜沉积在该晶片上，如使用热氧化以产生二氧化硅薄膜，使用化学气相沉积以产生硅、二氧化硅和氮化硅薄膜，以及使用溅射或其他技术以产生其他金属薄膜。
在将薄膜沉积在该半导体晶片上后，使用陈作掺杂的工艺将选取的杂质替代进该半导体晶格而产生半导体唯一的电气属性。该掺杂的硅晶片然后可均匀地涂覆光敏或辐照敏感材料薄层，称作“抗蚀剂(resist)”。在该电路中形成电子路径的小的几何图案然后可使用称作光刻的工艺转移到该抗蚀剂上。在该光刻工艺期间，该集成电路图案可绘制在称作“掩模”的玻璃板上，然后光学缩小、投影并转移到该光敏涂层上。
该光刻抗蚀剂图案然后通过称为蚀刻的工艺转移到下面的半导体材料的晶面(crystalline surface)。真空处理室通常用来在基片上蚀刻和化学气相沉积(CVD)材料，通过将蚀刻或沉积气体提供到该真空室并将射频(RF)场施加到该气体以将该气体激发为等离子态来进行。
反应性离子蚀刻系统通常由蚀刻室组成，该室中设有上部电极(或阳极)和下部电极(或阴极)。该阴极相对该阳极和该容器壁负偏置。该待蚀刻的晶片被合适的掩模覆盖并直接设在该阴极上。 将化学反应气体(如CF4、CHF3、CClF3、HBr、Cl2和SF6及其混合物)与O2、N2、He或Ar一起被引入该蚀刻室，并保持在通常为毫托范围内的压强下。该上部电极设有一个或多个气孔，该孔允许气体通过该电极均匀地分散进该室。该阳极和该阴极之间建立的电场将分解该反应气体而形成等离子。该晶片的表面通过与该反应性离子的化学反应以及离子撞击该晶片表面的动量传递来蚀刻。该电极创建的电场将这些离子吸引到该阴极，使得离子在大体垂直的方向撞击该表面，从而该工艺产生轮廓分明的垂直蚀刻的侧壁。该蚀刻反应器电极往往通过将两个或多个不相似的构件利用机械相容和/或导热粘结剂结合(bind)在一起来制造，从而可以有许多功能。
图1示出用于蚀刻基片的等离子处理系统的喷头电极总成100的一部分的剖视图。如图1所示，该喷头电极总成100包括阶梯状电极110、衬板140和保护环(或外部环)170。该喷头电极总成100还包括等离子限制总成(或晶片区域压力(WAP)总成)180，其围绕该上部电极110和该衬板140的外缘。
该总成100还包括热控板102和上(顶)板104，其中具有液体流动通道并形成该室的温度控制壁。该阶梯状电极110优选地是圆柱板并可由导电高纯度材料组成，如单晶硅、多晶硅、碳化硅或其他合适的材料(如铝或其合金、阳极氧化处理的铝、氧化钇涂覆的铝)。该衬板140利用下面描述的机械紧固件以机械方式固定于该电极110。该保护环170围绕该衬板140并提供到达下面所述的凸轮锁紧构件的入口。
如图1所示的该喷头电极总成100通常与集成平的下部电极的静电卡盘(未示)一起使用，晶片支撑在该下部电极上、在该上部电极110下方大约1至2cm的距离。这种等离子处理系统的示例是平行板类型反应器，如该 
电介质蚀刻系统，由Fremont，Calif 的Lam Research Corporation制造。这种卡紧布置通过提供背侧氦气(He)压强而提供对该晶片的温度控制，该压强控制该晶片和该卡盘之间的热传递速率。
该上部电极110是损耗部件，其必须定期更换。为了将工艺气体提供到该晶片和该上部电极之间的间隙，该上部电极110设有气体释放通道106，其大小和分布适于提供工艺气体，该气体被该电极激发并在该上部电极110下方的反应区域形成等离子。
该喷头电极总成100还包括等离子限制总成(或晶片区域等离子(WAP)总成)180，其围绕该上部电极110和该衬板140的外缘。该等离子限制总成180优选地由层叠或多个隔开的石英环190组成，其围绕该上部电极110和该衬板140的外缘。处理过程中，该等离子限制总成180在反应区域中产生压差并增加该反应室壁和该等离子之间的电阻，由此将该等离子限制在该上部电极110和该下部电极(未示)之间。
使用期间，该限制环190将该等离子限制在该室容积并控制该反应室内该等离子的压强。将该等离子限制与该反应室是许多因素的函数，包括该限制环190之间的间距、该反应室中该限制环外面以及该等离子内的压强、气体的种类和流率，以及RF功率水平和频率。如果该限制环190之间的间距非常小，则该等离子的限制更容易实现。通常，限制需要0.15英寸或更小的间距。然而，该限制环190的间距还确定该等离子的压强，并且希望可以调节该间距以获得最佳的工艺性能所需要的压强同时保持等离子。来自气体供应源的工艺气体通过该上板104中的一个或多个通道提供到电极110，该上板允许将工艺气体提供到该晶片上方的单个区域或多个区域。
该电极110优选地式平的圆盘或板，其从中心(未示)到厚度增加而在从外部边缘向内延伸的该等离子暴露表面上形成阶梯的区域范围厚度一致。该电极110直径优选地大于待处理晶片，例如，超过300mm。该上部电极110的直径可从大约15英寸至大约17英寸用以处理300mm晶片。该上部电极110优选地包括多个气体通道106，用以将工艺气体喷射进等离子反应室内、该上部电极110下方的空间中。
单晶硅和多晶硅是用于该电极110的等离子暴露表面的优选材料。高纯度、单晶或多晶硅最小化等离子处理期间基片的污染，因为其仅将最低量的不希望的元素引入该反应室，并且在等离子处理期间还平滑磨损，由此最小化颗粒。包括可用于该上部电极110的等离子-暴露表面的材料组合物的替代材料包括例如铝(这里所使用的“铝”指的是纯Al和其合金)、氧化钇涂覆的铝、SiC、SiN和AlN。
该衬板140优选地由这样的材料组成，其与用于在该等离子处理室中处理半导体基片的工艺气体化学相容，这种材料的热膨胀系数与该电极材料的热膨胀系数密切匹配，和/或该材料导热导电。可用来制作该衬板140的优选材料包括，但不限于，石墨、SiC、铝(Al)或其他合适材料。
该上部电极110以机械方式连接到该衬板140，而在该电极和衬板之间没有任何粘性粘合，即，导热导电弹性粘合材料不用来将该电极贴附于该衬板。
该衬板140优选地利用合适的机械紧固件连接到该热控板102，该紧固件可以是螺栓、螺钉等。例如，螺栓(未示)可插入该热控板102中的孔中并旋进该衬板140中的螺纹开口。该热控板102包括挠曲部分184，并优选地由机械加工的金属材料制成，如铝、铝合 金等。该上部温控板104优选地由铝或铝合金制成。该等离子限制总成(或晶片区域等离子总成(WAP))180设在该喷头电极总成100外面。包括多个垂直可调节等离子限制环190的合适的等离子限制总成180在共有美国专利No.5,534,751中描述，其通过引用整体结合在这里。
该上部电极可通过凸轮锁机构以机械方式连接到该衬板，如在共有美国专利申请No.61/036,862中所描述的，其递交于2008年3月14日，特此通过引用结合其公开内容。参照图2A，包括电极201和衬板203一部分的示范性凸轮锁电极夹头的三维视图。该电极夹头能够快速、干净和准确的在大量与工厂相关的工具中将可消耗的电极201贴附于衬板，如图1所示的该等离子蚀刻室。
该电极夹头包括安装在插口213中的立柱(锁紧销)205。该立柱可被碟簧层叠215围绕，例如，不锈钢Belleville垫片。该立柱205和碟簧层叠215然后可压合(press-fit)或通过使用粘结剂或机械紧固件以其他方式固定在该插口213中。该立柱205和该碟簧层叠215在该插口213中布置为使得该电极201和该衬板203之间能进行有限量的横向移动。限制该横向移动的量允许该电极201和该衬板203之间的紧配合，因此确保良好的热接触，同时仍提供一些移动，因为两个部件之间的热膨胀的差。该有限横向移动特征的更多细节在下面更详细的讨论。
在具体的示范性实施例中，该插口213由轴承级别(bearing grade)的 制造。或者，该插口213可由具备特定机械特性的其他材料制造，如良好的强度和耐冲击性、耐蠕变性、尺寸稳定性、耐辐射性和化学耐性。多种材料，如聚酰胺、聚酰亚胺、乙缩醛和超高分子量聚乙烯材料都是合适的。高温比塑料和其他相关材料对 于形成该插口213是不需要的，因为230℃通常是在如蚀刻室的应用中遇到的最高温度。通常，一般的运行温度接近130℃。
该电极夹头的其他部分由凸轮轴207组成，其每端被一对凸轮轴轴承209围绕。该凸轮轴207和凸轮轴轴承总成安装在该衬板203中机械加工出来的衬板孔211中。在设计用于300mm半导体晶片的蚀刻室的通常应用中，八个或多个该电极夹头可围绕该电极201/衬板203组合的边缘隔开。
该凸轮轴轴承209可由多种材料机械加工而成，包括 
或其他材料，如含氟聚合物、乙缩醛、聚酰胺、聚酰亚胺、聚四氟乙烯和聚醚醚酮(PEEK)，他们具有低摩擦系数和低颗粒脱落性。该立柱205和凸轮轴207可由不锈钢(例如，316，316L，17-7等)或任何其他提供良好强度和耐腐蚀性的材料机械加工制得。
现在参考图2B，该电极凸轮夹头的剖视图，进一步举例说明该凸轮夹头如何通过将该电极201拉到靠近该衬板203而运转。该立柱205/碟簧层叠215/插口213总成安装在该电极201中。如所示，该总成可通过该插口213上的外螺纹旋进该电极201中的纹螺插口。然而，该插口可通过粘结剂或其他类型的机械紧固件安装。
图3A-F中，具有增大的头部、碟簧层叠215和插口213的立柱205的侧视图和装配图300提供该凸轮锁电极夹头的示范性设计的更多细节。在具体的示范性实施例中，立柱/碟簧总成301压入该插口213。该插口213具有外螺纹以及六角形顶部构件，能够利用较小的扭矩(例如，在具体的示范性实施例中，大约20英寸-磅)轻易插进该电极201(见图2A和2B)。如上面所指明的，该插口213可由多种类型 的塑料机械加工得到。使用塑料最小化颗粒生成并可以没有擦伤地将该插口213安装进该电极201上的配对插口。
该立柱/插口总成303说明该插口213的上部部分的内径大于该立柱205的中段部分的外径。该两部分之间的直径差允许组装的电极夹头中有如上面所讨论的有限的横向运动。该立柱/碟簧总成301在该插口213的底部保持与该插口213刚性接触，而直径差允许一些横向运动(还见图2B)。
参照图4A-D，该凸轮轴207和凸轮轴轴承209的分解图400还标示出键销401。该凸轮轴207具有该键销401的末端首先插入该衬板孔211(见图2B)。在该衬板孔211的远端的一对小配对孔(未示)提供该凸轮轴207与该衬板孔211的正确对齐。该凸轮轴207的侧视图420清楚地标示出该凸轮轴207一端的六角开口403和相对一端的该键销401的可能的位置。
例如，继续参照图4A-D和2B，该电极凸轮夹头通过将该凸轮轴207插入该衬板孔211组装。该键销401通过与该对小配对孔之一干涉而限制该凸轮轴207在该衬板孔211中的转动。该凸轮轴可首先通过使用该六角开口403在一个方向转动，例如逆时针，以便允许该立柱205进入该凸轮轴207，然后顺时针转动以完全啮合和锁紧该立柱205。将该电极201夹持于该衬板203所需的夹紧力通过将该碟簧层叠215压缩超出其自由层叠高度而提供。该凸轮轴207具有内部偏心内部切断，其啮合该轴205的增大的头部。随着该碟簧层叠215压缩，该夹紧力从该碟簧层叠215中独立的弹簧传递到该插口213并通过该电极201传递到该衬板203。
在示范性的运转模式中，一旦该凸轮轴轴承贴附于该凸轮轴207并插入该衬板孔211，该凸轮轴207逆时针转动至其完全转动位 置。该立柱/插口总成303(图3A-F)然后轻轻扭进该电极201。该立柱205的头部然后插进水平延伸的衬板孔211下方垂直延伸的通孔。该电极201保持为抵靠(against)该衬板203，以及该凸轮轴207顺时针直到键销进入该两个小配对孔(未示)的第二个，或听到可以听到的咔嗒声(下面将更详细讨论)。该示范性运转模式可反过来以将该电极201从该衬板203卸下。然而，在该凸轮锁装置中，如可以听到的咔嗒声这样的特征是可选的。
参照图4E，图4A-D的该凸轮轴207的侧视图420的剖视图A-A标示出切割路径边缘440，该立柱205的头部通过其完全固定。在具体的示范性实施例中，两个半径R1和R2选择为该立柱205的头部发出如上所述的可选的可以听到的咔嗒声，以表明该立柱205何时完全固定。
图5A说明用于电容耦合等离子室的上部电极总成500包括下列特征：(a)凸轮锁紧的非粘合电极502；(b)衬板506；和(c)保护环508，其允许进入将该电极夹持于该衬板506的凸轮锁。
该电极总成500包括热控板510，其从该室的外面用螺栓固定于该室的温度控制顶壁512。该电极502可拆卸地从该室里面通过之前参照图2-4描述的凸轮锁机构514贴附于该衬板。
在一个优选实施例中，该电极总成500的电极502可通过如下步骤拆卸：(a)转动该保护环508至第一位置，将该保护环中的四个孔与位于该衬板的外部部分中的间隔位置的四个凸轮锁514对齐；(b)将工具(如内六角扳手)插入穿过该保护环中的每个孔并转动每个凸轮锁以释放各个凸轮锁的垂直延伸的锁紧销；(c)转动该保护环90°至第二位置，将该保护环中的四个孔与另外四个凸轮锁对齐；和(d)将工具(如内六角扳手)插入通过该保护环中的每个 孔并转动各个凸轮锁以释放各个凸轮锁的锁紧销；借此该电极502可降下并从该等离子室去除。
图5A还示出该凸轮锁装置之一的剖视图，其中可转动凸轮锁514位于该衬板506的外部部分中的水平延伸孔560中。该圆柱形凸轮锁514可通过工具(如内六角扳手)转动至：(a)锁紧位置，在该位置锁紧销562的增大的一端由该凸轮锁514的凸轮表面啮合，其升起该锁紧销的该增大的头部或(b)释放位置，在该位置该锁紧销562不被该凸轮锁514啮合。该衬板包括在其下面(lower face)的垂直延伸孔，该锁紧销经过该孔插入以啮合该凸轮锁。
在图5A所示实施例中，该衬板506中的外部台阶与该喷头电极502的上面的环形凹入安装表面配对。在可选布置中，该台阶和凹处可省去，从而该衬板的下面和该喷头电极的上面是平面。图5B示出修改的喷头电极502A的剖面，具有平的上部表面522A、五个定位销孔520A、八个插口550A、气孔528A和两个凹处520B，用以配对该第三和第四行气孔之间的垫圈的突出部。图5C示出修改的衬板506A，具有平的下部表面522B、五个定位销孔520C、八个凸轮锁514B和环形垫圈接收表面G1和G2。
图6A-B示出该电极502的细节。该电极502优选地是高纯度(小于10ppm杂质)、低电阻率(0.005至0.02ohm-cm)单晶硅板，其上面(安装表面)522具有用于容纳定位销524的定位销孔520。气孔528从该上面延伸到该下面(等离子暴露表面)530，并可布置为任何合适的图案。在所示实施例中，该气孔布置成13个周向延伸的行，其中3个气孔在距该电极中心大约0.5英寸的第一行，13个气孔在位于距该中心大约1.4英寸的第二行，23个气孔在位于距该中心大约2.5英寸的第三行，25个气孔在位于距该中心大约3.9英寸的第四行，29个气孔在该位于距该中心大约4.6英寸的第五行，34个气孔在该位 于距该中心大约5.4英寸的第六行，39个气孔在该位于距该中心大约6英寸的第七行，50个气孔在该位于距该中心大约7.5英寸的第八行，52个气孔在该位于距该中心大约8.2英寸的第九行，53个气孔在该位于距该中心大约9英寸的第十行，57个气孔在该位于距该中心大约10.3英寸的第十一行，59个气孔在该位于距该中心大约10.9英寸的第十二行以及63个孔在该位于距该中心大约11.4英寸的第十三行。
在替代布置中，562个气孔可布置为4个孔在该位于0.25英寸距该中心的第一行，10个孔在位于距该中心大约0.72英寸的第二行，20个孔在距该中心大约1.25英寸的第三行，26个孔在距该中心大约1.93英寸的第四行，30个孔在距该中心大约2.3英寸的第五行，36个孔在距该中心大约2.67英寸的第六行，40个孔在距该中心大约3.0英寸的第七行，52个孔在距该中心大约3.73英寸的第八行，58个孔在距该中心大约4.1英寸的第九行，62个孔在距该中心大约4.48英寸的第十行，70个孔在距该中心大约5.17英寸的第十一行，74个孔在距该中心大约5.44英寸的第十二行和80个孔在距该中心大约5.71英寸的第十三行。
在图5中A所示实施例中，该电极的上面包括9个定位销孔，其中3个销孔靠近中心、3个销孔在该环形凹处之内和3个销孔在靠近该电极外部边缘的该环形凹处中。该3个中心销孔径向对齐，并包括该内部电极中心的一个销孔和该三和第四行气孔之间的2个销孔。该靠近该环形凹处的中间销孔包括一个与该中心销孔对齐的销孔和两个隔开120°的销孔。该外部3个销孔在邻近的插口之间的位置处隔开120°。
图6A是示出该电极502的该等离子暴露表面530的正面立体图，具有13行气孔。图6B示出该上面的立体图，具有13行气孔。
该电极502包括：外部台阶(突出部分)536，其支撑该保护环508；该上面(安装表面)522，其啮合该衬板506的下部表面；该下面(等离子暴露表面)530，其包括内部锥形表面544、水平表面546和外部锥形表面548；以及上面540中的8个插口550，其中安装该锁紧销。
图7是衬板506的立体图。该衬板包括13行气体通道584，其与该喷头电极502中的通道528对齐。该衬板的上面586包括三个环形区域588a、588b、588c，其接触该热控板510的环形突出部。该热控板可通过紧固件连接到该等离子室的顶壁，该紧固件延伸穿过该顶壁进入该热控板，如共同受让美国专利申请No.2005/0133160、2007/0068629、2007/0187038、2008/0087641和2008/0090417所示，特此整体结合其公开内容。螺纹开口590位于该上面586和该环形区域588a、588b、588c的外缘以容纳延伸通过该顶板512和热控板510中开口的紧固件，从而将该衬板506保持为与该热控板510接触。见，例如，共同受让美国专利申请No.2008/0087641，以描述可承受热循环的紧固件。该上面586中的凹槽592容纳O形环，该O形环提供该衬板506和该热控板510之间的气密层。该上面586中的定位销孔594容纳定位销，其安装在该热控板中的定位销孔中。在孔560之间位置处的水平延伸螺纹开口561容纳介电紧固件，其用来保护该保护环不会转动，以及在该喷头电极装配后塞住保护环中的进入孔。
图8是该喷头电极总成500去除该保护环的立体图。如之前所解释的，该保护环可转动至一个或多个组装位置，在该位置，该凸轮锁可啮合并转动至锁紧位置，在锁紧位置，介电紧固件可插入开口561以将该保护环保持为不与该衬板的外缘接触并因此允许该衬板热膨胀。该热控板包括带有开口596的凸缘595，驱动器通过该开口支撑该等离子限制环。等离子限制环总成安装装置的细节可在共同 受让美国专利申请No.2006/0207502和2006/0283552中找到，其特此结合其所公开的全部内容。
该电极的安装表面522由于该衬板中8个凸轮锁夹持的该8个锁紧销所施加的夹紧力而毗连该衬板506的相对表面。该保护环508覆盖该衬板506中的安装孔，该保护环中的进入开口填充可去除的插入物，其由耐等离子聚合材料制成，如 
或其他材料，如含氟聚合物、乙缩醛、聚酰胺、聚酰亚胺、聚四氟乙烯和聚醚醚酮(PEEK)，他们具有低摩擦系数和低颗粒脱落性。
参照图5A，该衬板506和电极502之间的电接触由一个或多个垫圈556提供，如合适的材料的环形段，如“Q-PADII”，可从该Bergquist公司获得。这种垫圈位于该电极的外缘以及在该中心定位销和该外部垫圈之间的一个或多个位置。例如，可使用直径大约4和12英寸的环形垫圈。共同拥有的美国申请No.11/896,375，递交于2007年8月31日，包括Q-PAD材料制作的垫圈的细节，特此通过引用结合其公开内容。为了提供不同的工艺气体混合物和/或流率，一个或多个可选的气体分隔密封件可设在该中心定位销和该外部垫圈之间。例如，单个O形环可设在该电极502和该衬板506之间、在该内部和外部垫圈之间的位置以将内部气体分配区域与外部气体分配区域隔开。位于该电极502和该衬板506之间、沿该外部垫圈的内缘的O形环558可提供该电极和衬板之间的气体和颗粒密封。
图9示出优选的垫圈900的仰视图，在其下部表面904上具有多个突出部902形式的定位特征。该电极502A包括多个凹处(图5B中的520B)，大小设为容纳该垫圈900上的突出部。在所示实施例中，两个突出部902设为隔开180°，该突出部具有完全相同的圆柱形状，其安装在该电极502A中、位于该第三和第四周向气体通道528A行 之间的圆形凹处520B内。该突出部优选地大小为部分啮合在该电极502A中的该凹处520B中。尽管图9示出圆柱形突出部直径大于该垫圈宽度的一般，但是如果需要，该突出部可具有任何需要的形状和大小，以及突出部的数量可以是3、4、5、6、7、8或更多。例如，该垫圈可以是0.01英寸均匀厚度的平环，该突出部至少是该平环厚度的2，3，4或5倍。尽管该突出部可通过注模整体的突出部或将该平环的部分变形为突出部而形成，但是优选的由厚度大于该平环的不同材料形成该突出部，利用粘结剂将该突出部贴附于该平环，该粘结剂与等离子处理室的真空环境相容。
该垫圈优选地导电导热，并由优选地在高真空环境下不漏气的材料制成，例如，大约10至200mTorr，该材料具有低颗粒生成新能；适于在接触点承受剪切；不含金属部件，这是半导体基片中的寿命杀手，如Ag、Ni、Cu等。该垫圈可以是硅胶-铝箔夹层垫圈结构或弹性体-不锈钢夹层垫圈结构。优选地，该垫圈是铝片，上、下侧涂覆有导热导电橡胶，其与用于半导体制造的高真空环境相容，在该制造中执行多个步骤，如等离子蚀刻。该垫圈优选地是相容的，从而其可在该电极和衬板机械夹紧在一起时压缩，但是防止该电极和衬板的相对的表面在该喷头电极的温度循环期间彼此摩擦。
图9所示的垫圈900优选地是导热导电材料的层压板(如“Q-PAD”箔材料，可从Bergquist公司获得的)。图5C中G1位置的垫圈900优选地内径大约2.93英寸、外径大约3.43英寸以及厚度大约0.006英寸。这个垫圈具有两个突出部902，其包括片材(如硅酮橡胶)形成的圆柱形片，直径大约0.185英寸和高度大约0.026至0.034英寸。该突出部902优选地通过合适的粘结剂粘性粘合于该垫圈900的一侧，如硅胶弹性体粘结剂，例如可从Dow Corning获得的RTV3140硅胶粘结剂。该垫圈可通过从垫圈材料片切割或冲压出环 而制造。类似地，该突出部可由相同或不同材料切割或冲压得到，如弹性材料，可以导热导电或者可以不导热导电。例如，该突出部橡胶状材料组成，如黑硅酮橡胶，其弹性变形和部分啮合该喷头电极中的凹处。该垫圈900可因此不使用粘结剂而安装在该喷头电极上，以便在该喷头电极的清洁和替换过程中容易去除该垫圈。
尽管本发明已经参照其具体实施例来描述，但是对于本领域技术人员来说，显然可进行各种改变和修改，移进应用等同方式，而不背离所附权利要求的范围。
Claims (13)
1.一种喷头电极总成的垫圈，其中喷头电极夹紧于衬板，所述垫圈包括导热导电材料组成的环形带和多个在其表面上的突出部，该环形带的外径小于该喷头电极的外径，各突出部的高度至少比该环形带厚度厚两倍。
2.根据权利要求1所述的垫圈，其中该突出部包括两个圆柱形突出部，每个的直径是该环形带宽度的至少一半且厚度是该环形带厚度的至少四倍。
3.根据权利要求1所述的垫圈，其中该环形带是在多个硅酮橡胶层之间的铝箔层压板，该突出部粘性粘合于该环形带一侧。
4.根据权利要求1所述的垫圈，其中该多个突出部由两个隔开180°的圆柱形突出部组成。
5.根据权利要求1所述的垫圈，其中该环形带具有平的上部和下部表面，厚度为0.005至0.01英寸，该突出部是平的圆盘，厚度为0.02至0.04英寸，以及该突出部结合于该环形带一侧。
6.根据权利要求1所述的垫圈，其中该环形带外径为3至4英寸，内径为2至3英寸而宽度为0.2至0.4英寸。
7.一种喷头电极总成，包括：
衬板，包括多个位于该衬板的外部部分的凸轮锁；
喷头电极，直径超过12英寸，并包括由该喷头电极的上面和下面限定的中心部分和边缘部分，该上面包括延伸跨过该中心部分的平面，该下面由延伸跨过该中心部分的平的内部表 面以及延伸跨过该边缘部分的阶梯状外部表面限定，该阶梯状外部表面包括限定该喷头电极的厚度增大的区域的环形平面；多个在该电极的中心部分中的气体出口，通过该出口工艺气体可传输至该喷头电极和下部电极之间的间隙，半导体基片支撑在该下部电极上，该上面的边缘部分中多个周向隔开的插口，该插口支撑与该衬板的凸轮锁啮合的向上延伸锁紧销，从而将该喷头电极夹紧于该衬板；以及
权利要求1所述的垫圈，压缩在该喷头电极和该衬板之间，该喷头电极中凹处中的垫圈的突出部，该环形带防止该喷头电极的上面免于在该喷头电极的温度循环期间与该衬板的下面摩擦。
8.根据权利要求7所述的喷头电极总成，其中该突出部包括两个圆柱形突出部，每个的直径是该环形带宽度的至少一半，且厚度是该环形带厚度的至少四倍。
9.根据权利要求7所述的喷头电极总成，其中该环形带是在多个硅酮橡胶层之间的铝箔层压板，该突出部粘性粘合于该环形带一侧。
10.根据权利要求7所述的喷头电极总成，其中该多个突出部由两个隔开180°的圆柱形突出部组成。
11.根据权利要求7所述的喷头电极总成，其中该环形带具有平的上部和下部表面，厚度为0.005至0.01英寸，该突出部是平的圆盘，厚度为0.02至0.04英寸，以及该突出部粘合于该环形带一侧。
12.根据权利要求7所述的喷头电极总成，其中该环形带外径为3至4英寸，内径为2至3英寸而宽度为0.2至0.4英寸。
13.根据权利要求7所述的喷头电极总成，进一步包括该衬板和该喷头电极之间的气密层，该气密层位于气体通道的外侧。
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Also Published As
| Publication number | Publication date |
|---|---|
| DE202010004773U1 (de) | 2010-08-12 |
| JP2010251752A (ja) | 2010-11-04 |
| US20100261354A1 (en) | 2010-10-14 |
| KR200464038Y1 (ko) | 2013-02-19 |
| JP3172461U (ja) | 2011-12-22 |
| US8536071B2 (en) | 2013-09-17 |
| US20130034967A1 (en) | 2013-02-07 |
| TWM396482U (en) | 2011-01-11 |
| KR20100010304U (ko) | 2010-10-20 |
| US8272346B2 (en) | 2012-09-25 |
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