CN201956347U - High-power LED (light-emitting diode) - Google Patents
High-power LED (light-emitting diode) Download PDFInfo
- Publication number
- CN201956347U CN201956347U CN2010206319450U CN201020631945U CN201956347U CN 201956347 U CN201956347 U CN 201956347U CN 2010206319450 U CN2010206319450 U CN 2010206319450U CN 201020631945 U CN201020631945 U CN 201020631945U CN 201956347 U CN201956347 U CN 201956347U
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- hole
- silica gel
- led
- power led
- fin
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Abstract
The utility model relates to a high-power LED (light-emitting diode), which comprises a heat radiating fin, LED wafers, a welding disc and a ceramic baseplate. A penetrated stage through hole is arranged in the middle of the ceramic baseplate; the heat radiating fin is placed in a small-diameter hole of the stage through hole; a plurality of LED wafers are placed at the upper end of the heat radiating fin; the welding disc is placed on a stage surface and respectively connected with the LED wafers; fluorescent silica gel layers are arranged at upper ends of the LED wafers in a dot way; transparent silica gel is filled in a large-diameter hole of the stage through hole; and the LED wafers provided with the fluorescent silica gel in the dot way are encapsulated in the transparent silica gel. The high-power LED has the advantages of being simple in structure and convenient in manufacture, decreasing the manufacturing cost of products and prolonging the service life of the products.
Description
Technical field
The utility model relates to a kind of LED, particularly a kind of great power LED.
Background technology
The gluing process of existing great power LED product is the full whole bowl cup of fluorescent glue point that will prepare, and the product of working it out by this kind technology, client's light decay in use is bigger, and on average per 1000 hours, light decay 13%.Can't satisfy requirement of client.
Summary of the invention
The purpose of this utility model is exactly the weak point in the background technology, and a kind of great power LED is provided.
For achieving the above object, the utility model adopts following technical scheme: great power LED, comprise fin, LED wafer, pad and ceramic substrate, described ceramic substrate middle part is provided with the step through-hole that runs through, place fin in the path hole of step through-hole, some LED wafers are placed on the fin upper end, pad is placed on the step surface and connects with the LED wafer respectively, described LED wafer upper extreme point is provided with one deck fluorescence silica gel, be filled with transparent silica gel in the hole, big footpath of described step through-hole, described point is provided with the LED wafer package of fluorescence silica gel in transparent silica gel.
For a kind of optimization of the present utility model, described fin profile is cylindricality or rectangle.
For a kind of optimization of the present utility model, described ceramic substrate profile is cylindricality or rectangle.
The utility model is compared with background technology, has simple in structurely, easy to make, reduces the production cost, and has prolonged the useful life of product.
Description of drawings
Fig. 1 is the structural representation of great power LED.
Fig. 2 is the structural representation of ceramic substrate.
Embodiment
Embodiment 1: with reference to Fig. 1.Great power LED, comprise fin 4, LED wafer 6, pad 2 and ceramic substrate 1, described ceramic substrate 1 middle part is provided with the step through-hole that runs through, place fin 4 in the path hole 1b of step through-hole, some LED wafers 6 are placed on fin 4 upper ends, pad 2 is placed on the step surface and connects with LED wafer 6 respectively, described LED wafer 6 upper extreme points are provided with one deck fluorescence silica gel 5, be filled with transparent silica gel 3 in the big footpath hole 1a of described step through-hole, the LED wafer 6 that described point is provided with fluorescence silica gel 5 is encapsulated in the transparent silica gel 3.The profile of described fin 4 is cylindricality or rectangle.The profile of described ceramic substrate 1 is cylindricality or rectangle.
High-power LED encapsulation and baking process step are as follows:
A, according to white light finished product colour temperature, calculate the colour temperature of fluorescence silica gel, prepare corresponding fluorescence silica gel then.
B, on LED wafer 6 surface point one deck fluorescence silica gels 5 earlier, the glue amount is as the criterion to cover LED wafer 6, advances the baking box baking then, baking temperature is 120 ℃～130 ℃, stoving time is 25Min～35Min.
Put in bowl cup (hole, big footpath) behind c, the taking-up baking box again and annotate transparent silica gel 3, the glue amount is put down bowl cup (hole, footpath greatly) mouth along being as the criterion to put.
D, put into baking box baking again, baking temperature is 85 ℃～95 ℃, and stoving time is 25Min～35Min, finish baking for the first time after, baking temperature is adjusted to 140 ℃ ~ 160 ℃, continue baking 1.5～2.5 hours, treat out that take out roasting back is finished product.
What need understand is: though present embodiment is to the utility model detailed explanation of contrasting; but these explanations; just to simple declaration of the present utility model; rather than to restriction of the present utility model; any innovation and creation that do not exceed in the utility model connotation all fall in the protection range of the present utility model.
Claims (3)
1. great power LED, comprise fin, LED wafer, pad and ceramic substrate, described ceramic substrate middle part is provided with the step through-hole that runs through, place fin in the path hole of step through-hole, some LED wafers are placed on the fin upper end, pad is placed on the step surface and connects with the LED wafer respectively, it is characterized in that: described LED wafer upper extreme point is provided with one deck fluorescence silica gel, be filled with transparent silica gel in the hole, big footpath of described step through-hole, described point is provided with the LED wafer package of fluorescence silica gel in transparent silica gel.
2. great power LED according to claim 1 is characterized in that: described fin profile is cylindricality or rectangle.
3. great power LED according to claim 1 is characterized in that: described ceramic substrate profile is cylindricality or rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206319450U CN201956347U (en) | 2010-11-30 | 2010-11-30 | High-power LED (light-emitting diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206319450U CN201956347U (en) | 2010-11-30 | 2010-11-30 | High-power LED (light-emitting diode) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201956347U true CN201956347U (en) | 2011-08-31 |
Family
ID=44500449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206319450U Expired - Fee Related CN201956347U (en) | 2010-11-30 | 2010-11-30 | High-power LED (light-emitting diode) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201956347U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682036A (en) * | 2012-09-13 | 2014-03-26 | Lg伊诺特有限公司 | Light emitting device |
| CN113964253A (en) * | 2020-12-08 | 2022-01-21 | 江苏欧密格光电科技股份有限公司 | Mobile phone LED flash lamp structure and manufacturing process thereof |
-
2010
- 2010-11-30 CN CN2010206319450U patent/CN201956347U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682036A (en) * | 2012-09-13 | 2014-03-26 | Lg伊诺特有限公司 | Light emitting device |
| CN103682036B (en) * | 2012-09-13 | 2018-03-09 | Lg伊诺特有限公司 | Light-emitting device |
| CN113964253A (en) * | 2020-12-08 | 2022-01-21 | 江苏欧密格光电科技股份有限公司 | Mobile phone LED flash lamp structure and manufacturing process thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110831 Termination date: 20121130 |