CN203415613U - Square type high-refractive-index LED packaging structure with red phosphor cured on green chip - Google Patents
Square type high-refractive-index LED packaging structure with red phosphor cured on green chip Download PDFInfo
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- CN203415613U CN203415613U CN201320370045.9U CN201320370045U CN203415613U CN 203415613 U CN203415613 U CN 203415613U CN 201320370045 U CN201320370045 U CN 201320370045U CN 203415613 U CN203415613 U CN 203415613U
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- cup
- chip
- green glow
- electrode green
- bipolar electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The utility model relates to a square type high-refractive-index LED packaging structure with red phosphor cured on a green chip. The structure comprises a support and the double-electrode green light chip. The support comprises a bowl cup and a cup wall. The bowl cup has a flat type square structure. The inner side surface of the cup wall is an arc surface and located on the edge of the bowl cup. The cup opening of the cup wall is of a filleted square shape. The upper surface of the bowl cup is provided with the double-electrode green light chip. The double-electrode green light chip is connected with electrodes on the bowl cup through two leads. A red phosphor colloid layer is cured on the periphery of the double-electrode green light chip. The structure can increase the illumination brightness and meanwhile lower the cost.
Description
Technical field
The utility model relates to LED encapsulation technology field, particularly relates to the square high index of refraction LED encapsulating structure that a kind of green chip adds red fluorescent material.
Background technology
What in existing LED encapsulation, luminescence chip adopted is AllnGaP chip, and because AllnGaP chip is generally single electrode, during encapsulation, positive-negative polarity cannot be flexible, AllnGaP is the emission wavelength of chip itself, its emission wavelength is non-adjustable, and AllnGaP chip material is more crisp, easily damages.Adopt the LED brightness of AllnGaP chip package lower, cost is higher simultaneously.
Utility model content
Technical problem to be solved in the utility model is to provide the square high index of refraction LED encapsulating structure that a kind of green chip adds red fluorescent material, can improve luminosity and reduce costs.
The utility model solves the technical scheme that its technical problem adopts: the square high index of refraction LED encapsulating structure that provides a kind of green chip to add red fluorescent material, comprise support and bipolar electrode green glow chip, and described support comprises bowl cup and a wall of cup; Described bowl cup is flat square structure; The medial surface of described wall of cup is arc surface, and is positioned at the edge of bowl cup, and the rim of a cup of described wall of cup is fillet square; The upper surface of described bowl cup is provided with described bipolar electrode green glow chip, and described bipolar electrode green glow chip is connected with the electrode on bowl cup by two wires; Described bipolar electrode green glow chip is solidified with red fluorescence powder colloid layer around.
Described bipolar electrode green glow chip is InGaN chip.
Described red fluorescence powder colloid layer is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.
Beneficial effect
Owing to having adopted above-mentioned technical scheme, the utility model compared with prior art, has following advantage and good effect: the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can regulate according to the concentration of red fluorescence powder, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected InGaN chip, and this chip material is harder, can improve product quality reliability.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structural representation of rim of a cup in the utility model;
Fig. 3 is the relative spectral figure of the utility model medium green optical chip;
Fig. 4 is the relative spectral figure of red fluorescence powder in the utility model;
Fig. 5 is the relative spectral figure of encapsulating structure of the present utility model.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment are only not used in restriction scope of the present utility model for the utility model is described.In addition should be understood that those skilled in the art can make various changes or modifications the utility model after having read the content of the utility model instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Execution mode of the present utility model relates to the square high index of refraction LED encapsulating structure that a kind of green chip adds red fluorescent material, comprises support 1 and bipolar electrode green glow chip 2, and described support 1 comprises bowl cup 11 and wall of cup 12; Described bowl cup 11 is the positive square structure of flat; The medial surface of described wall of cup 12 is arc surface, and is positioned at the edge of bowl cup 11, and the rim of a cup of described wall of cup 12 is fillet square (see figure 2), and wherein, fillet square is four angles of standard square to be replaced with to the square at symmetric, arc angle; The upper surface of described bowl cup 11 is provided with described bipolar electrode green glow chip 2, and described bipolar electrode green glow chip 2 is connected with the electrode on bowl cup 11 by two wires 3; Described bipolar electrode green glow chip 2 is solidified with red fluorescence powder colloid layer 4 around.Wherein, red fluorescence powder colloid layer 4 is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.Because the medial surface of wall of cup is arc surface, the rim of a cup of wall of cup is fillet square, thereby can increase optical index and applicable module fritter type products.
Wherein, described bipolar electrode green glow chip 2 is InGaN chip.The utility model utilizes nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that 515-535nm indium nitride sows the green glow chip of (InGaN), by regulating the concentration 5% to 70% of fluorescent material, thereby inspire the LED of any wavelength between 535nm-620nm.Table 1 is the product light kilsyth basalt obtaining after green glow chip and variable concentrations fluorescent powder packaging.
| Green glow chip wavelength/nm | Fluorescent material concentration | Brightness/mcd |
| 515 | 5% | 4328 |
| 517.5 | 12.8% | 4267 |
| 520 | 20.7% | 4193 |
| 522.5 | 31.8% | 4119 |
| 525 | 42.95% | 4054 |
| 527.5 | 55.7% | 3994 |
| 530 | 70% | 3916 |
Fig. 3 is the relative spectral figure of medium green optical chip of the present invention, Fig. 4 is the relative spectral figure of red fluorescence powder in the present invention, Fig. 5 is the relative spectral figure of encapsulating structure of the present invention, as can be seen from Figure 5, by the wavelength that can send after green glow chip excitated red fluorescent powder, is 565nm green-yellow light.
Utilizing nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that 515-535nm indium nitride sows more than the brightness of the LED encapsulating structure that the green glow chip of (InGaN) obtains can reach 3900mcd, is 2000mcd and only use the brightness of the LED encapsulating structure that AllnGaP chip obtains.
Manufacturing process of the present utility model is as follows:
Green chip adds a method for packing for the square high index of refraction LED encapsulating structure of red fluorescent material, comprises the following steps:
(1) bipolar electrode green glow chip is placed on to bowl cup above, and by wire, bipolar electrode green glow chip is connected with the electrode on bowl cup.Wherein, bipolar electrode green glow chip can be InGaN chip.
(2) preparation red fluorescence powder colloid layer, its concrete sub-step is at room temperature stirring 2-5 minute by red fluorescence powder and epoxy resin or silica gel, and rotating speed during stirring is 2000-3000 rev/min.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, accounts for the 5%-70% of oeverall quality.By the mode stirring, can make red fluorescence powder be uniformly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made red fluorescence powder colloid layer parcel green glow chip.
(4) solidify red fluorescence powder colloid layer and complete encapsulation.
Be not difficult to find, the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can regulate according to the concentration of fluorescent material, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected InGaN chip, and this chip material is harder, can improve product quality reliability.
Claims (2)
1. green chip adds a square high index of refraction LED encapsulating structure for red fluorescent material, comprises support (1) and bipolar electrode green glow chip (2), it is characterized in that, described support (1) comprises bowl cup (11) and wall of cup (12); Described bowl cup (11) is the positive square structure of flat; The medial surface of described wall of cup (12) is arc surface, and is positioned at the edge of bowl cup (11), and the rim of a cup of described wall of cup (12) is fillet square; The upper surface of described bowl cup (11) is provided with described bipolar electrode green glow chip (2), and described bipolar electrode green glow chip (2) is connected with the electrode on bowl cup (11) by two wires (3); Described bipolar electrode green glow chip (2) is solidified with red fluorescence powder colloid layer (4) around.
2. green chip according to claim 1 adds the square high index of refraction LED encapsulating structure of red fluorescent material, it is characterized in that, described bipolar electrode green glow chip (2) is InGaN chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320370045.9U CN203415613U (en) | 2013-06-25 | 2013-06-25 | Square type high-refractive-index LED packaging structure with red phosphor cured on green chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320370045.9U CN203415613U (en) | 2013-06-25 | 2013-06-25 | Square type high-refractive-index LED packaging structure with red phosphor cured on green chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203415613U true CN203415613U (en) | 2014-01-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320370045.9U Expired - Fee Related CN203415613U (en) | 2013-06-25 | 2013-06-25 | Square type high-refractive-index LED packaging structure with red phosphor cured on green chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203415613U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354263A (en) * | 2013-06-25 | 2013-10-16 | 宁波协源光电科技有限公司 | Structure and method for packaging square high-refractive-index LED formed by green chip and red phosphor |
-
2013
- 2013-06-25 CN CN201320370045.9U patent/CN203415613U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354263A (en) * | 2013-06-25 | 2013-10-16 | 宁波协源光电科技有限公司 | Structure and method for packaging square high-refractive-index LED formed by green chip and red phosphor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: NINGBO DONGLONG OPTOELECTRONIC TECHNOLOGY CO., LTD Free format text: FORMER OWNER: NINGBO SHINING OPTOELECTRONICS CO., LTD. Effective date: 20140310 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140310 Address after: 315327, Cixi, Zhejiang province Ningbo City, East Town, Yu Yu Road, No. 218 Patentee after: Ningbo Donglong Optoelectronic Technology Co., Ltd. Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee before: Ningbo Shining OptoElectronics Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: NINGBO SHINING OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: NINGBO DONGLONG OPTOELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20140902 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140902 Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee after: Ningbo Shining OptoElectronics Co., Ltd. Address before: 315327, Cixi, Zhejiang province Ningbo City, East Town, Yu Yu Road, No. 218 Patentee before: Ningbo Donglong Optoelectronic Technology Co., Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee after: Ningbo Association of Optoelectronics Polytron Technologies Inc Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee before: Ningbo Shining OptoElectronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140129 Termination date: 20200625 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |