CN203434184U - Green chip and red fluorescence powder small module high refractive index LED package structure - Google Patents
Green chip and red fluorescence powder small module high refractive index LED package structure Download PDFInfo
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- CN203434184U CN203434184U CN201320370038.9U CN201320370038U CN203434184U CN 203434184 U CN203434184 U CN 203434184U CN 201320370038 U CN201320370038 U CN 201320370038U CN 203434184 U CN203434184 U CN 203434184U
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- cup
- chip
- green glow
- bowl cup
- bipolar electrode
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Abstract
The utility model relates to a green chip and red fluorescence powder small module high refractive index LED package structure. The structure comprises a bracket and a two-electrode green light chip. The bracket comprises a bowl cup and a cup wall. The bowl cup is of a flat square structure. The inner side of the cup wall is an arc face, and is located on the edge of the bowl cup. The cup mouth of the cup wall is round. The two-electrode green light chip is arranged on the upper surface of the bowl cup. The two-electrode green light chip is connected with the electrode on the bowl cup through two wires. A red fluorescent powder colloid layer is solidified around the two-electrode green light chip. According to the utility model, the illumination brightness is improved, and the cost is reduced.
Description
Technical field
The utility model relates to LED encapsulation technology field, particularly relates to a kind of green chip and adds the little module high index of refraction of red fluorescent material LED encapsulating structure.
Background technology
What in existing LED encapsulation, luminescence chip adopted is AllnGaP chip, and because AllnGaP chip is generally single electrode, during encapsulation, positive-negative polarity cannot be flexible, AllnGaP is the emission wavelength of chip itself, its emission wavelength is non-adjustable, and AllnGaP chip material is more crisp, easily damages.Adopt the LED brightness of AllnGaP chip package lower, cost is higher simultaneously.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of green chip and adds the little module high index of refraction of red fluorescent material LED encapsulating structure, can improve luminosity and reduce costs.
The utility model solves the technical scheme that its technical problem adopts: provide a kind of green chip to add the little module high index of refraction of red fluorescent material LED encapsulating structure, comprise support and bipolar electrode green glow chip, described support comprises bowl cup and a wall of cup; Described bowl cup is the positive square structure of flat; The medial surface of described wall of cup is arc surface, and is positioned at the edge of bowl cup, and the rim of a cup of described wall of cup is rounded; The upper surface of described bowl cup is provided with described bipolar electrode green glow chip, and described bipolar electrode green glow chip is connected with the electrode on bowl cup by two wires; Described bipolar electrode green glow chip is solidified with red fluorescence powder colloid layer around.
Described bipolar electrode green glow chip is InGaN chip.
Described red fluorescence powder colloid layer is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.
Beneficial effect
Owing to having adopted above-mentioned technical scheme, the utility model compared with prior art, has following advantage and good effect: the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can regulate according to the concentration of red fluorescence powder, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected InGaN chip, and this chip material is harder, can improve product quality reliability.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structural representation of rim of a cup in the utility model;
Fig. 3 is the relative spectral figure of the utility model medium green optical chip;
Fig. 4 is the relative spectral figure of red fluorescence powder in the utility model;
Fig. 5 is the relative spectral figure of encapsulating structure of the present utility model.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment are only not used in restriction scope of the present utility model for the utility model is described.In addition should be understood that those skilled in the art can make various changes or modifications the utility model after having read the content of the utility model instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Execution mode of the present utility model relates to a kind of green chip and adds the little module high index of refraction of red fluorescent material LED encapsulating structure, as shown in Figure 1, comprises support 1 and bipolar electrode green glow chip 2, and described support 1 comprises bowl cup 11 and wall of cup 12; Described bowl cup 11 is the positive square structure of flat; The medial surface of described wall of cup 12 is arc surface, and is positioned at the edge of bowl cup 11, the rounded (see figure 2) of rim of a cup of described wall of cup 12; The upper surface of described bowl cup 11 is provided with described bipolar electrode green glow chip 2, and described bipolar electrode green glow chip 2 is connected with the electrode on bowl cup 11 by two wires 3; Described bipolar electrode green glow chip 2 is solidified with red fluorescence powder colloid layer 4 around.Wherein, red fluorescence powder colloid layer 4 is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.Because the medial surface of wall of cup is arc surface, the rim of a cup of wall of cup is rounded, thereby can increase optical index and applicable module fritter type products.
Wherein, described bipolar electrode green glow chip 2 is InGaN chip.The utility model utilizes nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that 515-535nm indium nitride sows the green glow chip of (InGaN), by regulating the concentration 5% to 70% of fluorescent material, thereby inspire the LED of any wavelength between 535nm-620nm.Table 1 is the product light kilsyth basalt obtaining after green glow chip and variable concentrations fluorescent powder packaging.
| Green glow chip wavelength/nm | Fluorescent material concentration | Brightness/mcd |
| 515 | 5% | 4321 |
| 517.5 | 12.8% | 4263 |
| 520 | 20.7% | 4194 |
| 522.5 | 31.8% | 4102 |
| 525 | 42.95% | 4039 |
| 527.5 | 55.7% | 3976 |
| 530 | 70% | 3907 |
Fig. 3 is the relative spectral figure of medium green optical chip of the present invention, Fig. 4 is the relative spectral figure of red fluorescence powder in the present invention, Fig. 5 is the relative spectral figure of encapsulating structure of the present invention, as can be seen from Figure 5, by the wavelength that can send after green glow chip excitated red fluorescent powder, is 565nm green-yellow light.
Utilizing nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that 515-535nm indium nitride sows more than the brightness of the LED encapsulating structure that the green glow chip of (InGaN) obtains can reach 3900mcd, is 2000mcd and only use the brightness of the LED encapsulating structure that AllnGaP chip obtains.
Manufacturing process of the present utility model is as follows:
A method for packing for above-mentioned Novel LED encapsulating structure, comprises the following steps:
(1) bipolar electrode green glow chip is placed on to the upper surface of bowl cup, and by wire, bipolar electrode green glow chip is connected with the electrode on bowl cup.Wherein, bipolar electrode green glow chip can be InGaN chip.
(2) preparation red fluorescence powder colloid layer, its concrete sub-step is at room temperature stirring 2-5 minute by red fluorescence powder and epoxy resin or silica gel, and rotating speed during stirring is 2000-3000 rev/min.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, accounts for the 5%-70% of oeverall quality.By the mode stirring, can make red fluorescence powder be uniformly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made red fluorescence powder colloid layer parcel green glow chip.
(4) solidify red fluorescence powder colloid layer and complete encapsulation.
Be not difficult to find, the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can regulate according to the concentration of fluorescent material, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected InGaN chip, and this chip material is harder, can improve product quality reliability.
Claims (2)
1. green chip adds the little module high index of refraction of a red fluorescent material LED encapsulating structure, comprises support (1) and bipolar electrode green glow chip (2), it is characterized in that, described support (1) comprises bowl cup (11) and wall of cup (12); Described bowl cup (11) is the positive square structure of flat; The medial surface of described wall of cup (12) is arc surface, and is positioned at the edge of bowl cup (11), and the rim of a cup of described wall of cup (12) is rounded; The upper surface of described bowl cup (11) is provided with described bipolar electrode green glow chip (2), and described bipolar electrode green glow chip (2) is connected with the electrode on bowl cup (11) by two wires (3); Described bipolar electrode green glow chip (2) is solidified with red fluorescence powder colloid layer (4) around.
2. green chip according to claim 1 adds the little module high index of refraction of red fluorescent material LED encapsulating structure, it is characterized in that, described bipolar electrode green glow chip (2) is InGaN chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320370038.9U CN203434184U (en) | 2013-06-25 | 2013-06-25 | Green chip and red fluorescence powder small module high refractive index LED package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320370038.9U CN203434184U (en) | 2013-06-25 | 2013-06-25 | Green chip and red fluorescence powder small module high refractive index LED package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203434184U true CN203434184U (en) | 2014-02-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320370038.9U Expired - Fee Related CN203434184U (en) | 2013-06-25 | 2013-06-25 | Green chip and red fluorescence powder small module high refractive index LED package structure |
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| Country | Link |
|---|---|
| CN (1) | CN203434184U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354259A (en) * | 2013-06-25 | 2013-10-16 | 宁波协源光电科技有限公司 | Structure and method for packaging small-module high-refractive-index LED formed by green chip and red phosphor |
-
2013
- 2013-06-25 CN CN201320370038.9U patent/CN203434184U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354259A (en) * | 2013-06-25 | 2013-10-16 | 宁波协源光电科技有限公司 | Structure and method for packaging small-module high-refractive-index LED formed by green chip and red phosphor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: NINGBO DONGLONG OPTOELECTRONIC TECHNOLOGY CO., LTD Free format text: FORMER OWNER: NINGBO SHINING OPTOELECTRONICS CO., LTD. Effective date: 20140310 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140310 Address after: 315327, Cixi, Zhejiang province Ningbo City, East Town, Yu Yu Road, No. 218 Patentee after: Ningbo Donglong Optoelectronic Technology Co., Ltd. Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee before: Ningbo Shining OptoElectronics Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: NINGBO SHINING OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: NINGBO DONGLONG OPTOELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20140902 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140902 Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee after: Ningbo Shining OptoElectronics Co., Ltd. Address before: 315327, Cixi, Zhejiang province Ningbo City, East Town, Yu Yu Road, No. 218 Patentee before: Ningbo Donglong Optoelectronic Technology Co., Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee after: Ningbo Association of Optoelectronics Polytron Technologies Inc Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village Patentee before: Ningbo Shining OptoElectronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140212 Termination date: 20200625 |
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| CF01 | Termination of patent right due to non-payment of annual fee |