CN103354265A - Structure and method for packaging strip-shaped high-refractive-index LED formed by green chip and red phosphor - Google Patents
Structure and method for packaging strip-shaped high-refractive-index LED formed by green chip and red phosphor Download PDFInfo
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- CN103354265A CN103354265A CN2013102583768A CN201310258376A CN103354265A CN 103354265 A CN103354265 A CN 103354265A CN 2013102583768 A CN2013102583768 A CN 2013102583768A CN 201310258376 A CN201310258376 A CN 201310258376A CN 103354265 A CN103354265 A CN 103354265A
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Abstract
The present invention relates to a structure and a method for packaging a strip-shaped high-refractive-index LED formed by a green chip and red phosphor. The structure comprises a frame and a dual-electrode green chip. The frame includes a bowl cup and a cup wall. The bowl cup has a strip-shaped cuboid structure. The cup wall has an arc medial surface, and is positioned at the edge of the bowl cup. The cup wall has an arched-end rectangular shape at the rim of the cup. The dual-electrode green chip is mounted on the upper surface of the bowl cup and is connected with electrodes of the bowl cup by two wires. A red phosphor glue layer is solidified around the dual-electrode green chip. The method comprises: placing the dual-electrode green chip onto the bowl cup and connecting the wire; preparing the red phosphor glue layer; arranging the red phosphor glue layer in the bowl cup on the frame; and solidifying the red phosphor glue layer, and completing the packaging. By the structure and method provided by the invention, the luminance is improved and the cost is reduced.
Description
Technical field
The present invention relates to LED encapsulation technology field, particularly relate to strip high index of refraction LED encapsulating structure and method that a kind of green chip adds red fluorescent material.
Background technology
What luminescence chip adopted in the existing LED encapsulation is the AllnGaP chip, because the AllnGaP chip is generally single electrode, positive-negative polarity can't be flexible during encapsulation, AllnGaP is the emission wavelength of chip itself, its emission wavelength is non-adjustable, and AllnGaP chip material is more crisp, damages easily.Adopt simultaneously the LED brightness of AllnGaP chip package lower, cost is higher.
Summary of the invention
Technical problem to be solved by this invention provides strip high index of refraction LED encapsulating structure and the method that a kind of green chip adds red fluorescent material, can improve luminosity and reduce cost.
The technical solution adopted for the present invention to solve the technical problems is: the strip high index of refraction LED encapsulating structure that provides a kind of green chip to add red fluorescent material, comprise support and bipolar electrode green glow chip, and described support comprises bowl cup and wall of cup; Described bowl cup is the strip rectangular structure; The medial surface of described wall of cup is arc surface, and is positioned at the edge of bowl cup, and the rim of a cup of described wall of cup is the circular arc rectangle; The upper surface of described bowl cup is equipped with described bipolar electrode green glow chip, and described bipolar electrode green glow chip links to each other with electrode on the bowl cup by two wires; Be solidified with the red fluorescence powder colloid layer around the described bipolar electrode green glow chip.
The technical solution adopted for the present invention to solve the technical problems is: the method for packing of the strip high index of refraction LED encapsulating structure that a kind of above-mentioned green chip adds red fluorescent material also is provided, may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup;
(2) red fluorescence powder and epoxy resin or silica gel are stirred preparation red fluorescence powder colloid layer, wherein, the concentration of red fluorescence powder is 5%-70%;
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made red fluorescence powder colloid layer parcel green glow chip;
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
Described bipolar electrode green glow chip is the InGaN chip.
In the described step (2) red fluorescence powder and epoxy resin or silica gel were at room temperature stirred 2-5 minute, rotating speed is 2000-3000 rev/min.
The wavelength of described green glow chip is 515nm, and the concentration of red fluorescence powder is 5%.
The wavelength of described green glow chip is 517.5nm, and the concentration of red fluorescence powder is 12.8%.
The wavelength of described green glow chip is 520nm, and the concentration of red fluorescence powder is 20.7%.
The wavelength of described green glow chip is 522.5nm, and the concentration of red fluorescence powder is 31.8%.
The wavelength of described green glow chip is 525nm, and the concentration of red fluorescence powder is 42.95%.
The wavelength of described green glow chip is 527.5nm, and the concentration of red fluorescence powder is 55.7%.
The wavelength of described green glow chip is 530nm, and the concentration of red fluorescence powder is 70%.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the present invention compared with prior art has following advantage and good effect: the present invention adopts bipolar electrode green glow chip, and polarity can be carried out accommodation as required when encapsulation, and operability is stronger.Glow color of the present invention can be regulated according to the concentration of red fluorescence powder, and implementation is flexible and changeable.Bipolar electrode green glow chip among the present invention can be selected the InGaN chip, and this chip material is harder, can improve the product quality reliability.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of rim of a cup among the present invention;
Fig. 3 is the relative spectral figure of medium green optical chip of the present invention;
Fig. 4 is the relative spectral figure of red fluorescence powder among the present invention;
Fig. 5 is the relative spectral figure of encapsulating structure of the present invention.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiments of the present invention relate to the strip high index of refraction LED encapsulating structure that a kind of green chip adds red fluorescent material, as shown in Figure 1, comprise support 1 and bipolar electrode green glow chip 2, and described support 1 comprises bowl cup 11 and wall of cup 12; Described bowl cup 11 is the strip rectangular structure; The medial surface of described wall of cup 12 is arc surface, and is positioned at the edge of bowl cup 11, and the rim of a cup of described wall of cup 12 is circular arc rectangle (see figure 2), and wherein, the circular arc rectangle is the rectangle that two broadsides of standard rectangular is replaced with symmetrical arc; The upper surface of described bowl cup 11 is equipped with described bipolar electrode green glow chip 2, and described bipolar electrode green glow chip 2 links to each other with electrode on the bowl cup 11 by two wires 3; Be solidified with red fluorescence powder colloid layer 4 around the described bipolar electrode green glow chip 2.Wherein, red fluorescence powder colloid layer 4 is stirred by red fluorescence powder and epoxy resin or silica gel and forms.Because the medial surface of wall of cup is arc surface, the rim of a cup of wall of cup is the circular arc rectangle, thereby can increase optical index.
Wherein, the height of described red fluorescence powder colloid layer 4 is identical with the height of described wall of cup 12.Described bipolar electrode green glow chip 2 is the InGaN chip.The present invention utilizes nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that the 515-535nm indium nitride sows the green glow chip of (InGaN), by regulating the concentration 5% to 70% of fluorescent material, thereby inspire the LED of any wavelength between the 535nm-620nm.Table 1 is the product light kilsyth basalt that obtains behind green glow chip and the variable concentrations fluorescent powder packaging.
| Green glow chip wavelength/nm | Fluorescent material concentration | Brightness/mcd |
| 515 | 5% | 4335 |
| 517.5 | 12.8% | 4250 |
| 520 | 20.7% | 4180 |
| 522.5 | 31.8% | 4114 |
| 525 | 42.95% | 4040 |
| 527.5 | 55.7% | 3979 |
| 530 | 70% | 3906 |
Fig. 3 is the relative spectral figure of medium green optical chip of the present invention, Fig. 4 is the relative spectral figure of red fluorescence powder among the present invention, Fig. 5 is the relative spectral figure of encapsulating structure of the present invention, as can be seen from Figure 5, is the 565nm green-yellow light by the wavelength that can send behind the green glow chip excitated red fluorescent powder.
Utilize nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that the 515-535nm indium nitride sows the brightness of the LED encapsulating structure that the green glow chip of (InGaN) obtains and can reach more than the 3900mcd, and only use the brightness of the LED encapsulating structure that the AllnGaP chip obtains to be 2000mcd.
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 515nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 2 minutes, and the rotating speed during stirring is 2000 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 5%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 4335mcd, exceeds about 115% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 517.5nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 2.5 minutes, and the rotating speed during stirring is 2150 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 12.8%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 4250mcd, exceeds about 110% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
Embodiment 3
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 520nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 3 minutes, and the rotating speed during stirring is 2250 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 20.7%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 4180mcd, exceeds about 108% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
Embodiment 4
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 522.5nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 3.5 minutes, and the rotating speed during stirring is 2500 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 31.8%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 4114mcd, exceeds about 105% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
Embodiment 5
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 525nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 4 minutes, and the rotating speed during stirring is 2750 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 42.95%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 4040mcd, exceeds about 101% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
Embodiment 6
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 527.5nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 4.5 minutes, and the rotating speed during stirring is 2850 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 55.7%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 3979mcd, exceeds about 98% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
Embodiment 7
The method for packing of the logical LED encapsulating structure of the high light of strip that a kind of above-mentioned green chip adds red fluorescent material may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the upper surface of bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip, and the wavelength of InGaN chip is 530nm.
(2) preparation red fluorescence powder colloid layer, its concrete substep is at room temperature stirring red fluorescence powder and epoxy resin or silica gel 5 minutes, and the rotating speed during stirring is 3000 rev/mins.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 70%.By the mode that stirs red fluorescence powder is evenly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made around the red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
The brightness that the green chip that finally obtains adds the logical LED encapsulating structure of the high light of strip of red fluorescent material is 3906mcd, exceeds about 95% than the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain.
Be not difficult to find that the present invention adopts bipolar electrode green glow chip, polarity can be carried out accommodation as required when encapsulation, and operability is stronger.Glow color of the present invention can be regulated according to the concentration of fluorescent material, and implementation is flexible and changeable.Bipolar electrode green glow chip among the present invention can be selected the InGaN chip, and this chip material is harder, can improve the product quality reliability.
Claims (10)
1. a green chip adds the strip high index of refraction LED encapsulating structure of red fluorescent material, comprises support (1) and bipolar electrode green glow chip (2), it is characterized in that, described support (1) comprises bowl cup (11) and a wall of cup (12); Described bowl cup (11) is the strip rectangular structure, and the medial surface of described wall of cup (12) is arc surface, and is positioned at the edge of bowl cup (11), and the rim of a cup of described wall of cup (12) is the circular arc rectangle; The upper surface of described bowl cup (11) is equipped with described bipolar electrode green glow chip (2), and described bipolar electrode green glow chip (2) links to each other with electrode on the bowl glass (11) by two wires (3); Described bipolar electrode green glow chip (2) is solidified with red fluorescence powder colloid layer (4) on every side.
One kind as claimed in claim 1 green chip add the method for packing of the strip high index of refraction LED encapsulating structure of red fluorescent material, it is characterized in that, may further comprise the steps:
(1) bipolar electrode green glow chip is placed on the bowl cup, and by wire bipolar electrode green glow chip is linked to each other with electrode on the bowl cup;
(2) red fluorescence powder and epoxy resin or silica gel are stirred preparation red fluorescence powder colloid layer, wherein, the concentration of red fluorescence powder is 5%-70%;
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made red fluorescence powder colloid layer parcel green glow chip;
(4) solidify the red fluorescence powder colloid layer and finish encapsulation.
3. method for packing according to claim 2 is characterized in that, described bipolar electrode green glow chip is the InGaN chip.
4. method for packing according to claim 2 is characterized in that, in the described step (2) red fluorescence powder and epoxy resin or silica gel is at room temperature stirred 2-5 minute, and rotating speed is 2000-3000 rev/min.
5. method for packing according to claim 2 is characterized in that, the wavelength of described green glow chip is 515nm, and red fluorescence powder concentration is 5%.
6. method for packing according to claim 2 is characterized in that, the wavelength of described green glow chip is 517.5nm, and red fluorescence powder concentration is 12.8%.
7. method for packing according to claim 2 is characterized in that, the wavelength of described green glow chip is 520nm, and red fluorescence powder concentration is 20.7%.
8. method for packing according to claim 2 is characterized in that, the wavelength of described green glow chip is 525nm, and red fluorescence powder concentration is 42.95%.
9. method for packing according to claim 2 is characterized in that, the wavelength of described green glow chip is 527.5nm, and red fluorescence powder concentration is 55.7%.
10. method for packing according to claim 2 is characterized in that, the wavelength of described green glow chip is 530nm, and red fluorescence powder concentration is 70%.
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| CN2013102583768A CN103354265A (en) | 2013-06-25 | 2013-06-25 | Structure and method for packaging strip-shaped high-refractive-index LED formed by green chip and red phosphor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834235A (en) * | 2009-03-10 | 2010-09-15 | 亿光电子工业股份有限公司 | Light-emitting diode packaging structure and manufacture method thereof |
| CN102543986A (en) * | 2012-01-04 | 2012-07-04 | 歌尔声学股份有限公司 | Light-emitting diode device |
| CN203415612U (en) * | 2013-06-25 | 2014-01-29 | 宁波协源光电科技有限公司 | Bar type high-refractive-index LED packaging structure with red phosphor cured on green chip |
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- 2013-06-25 CN CN2013102583768A patent/CN103354265A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834235A (en) * | 2009-03-10 | 2010-09-15 | 亿光电子工业股份有限公司 | Light-emitting diode packaging structure and manufacture method thereof |
| CN102543986A (en) * | 2012-01-04 | 2012-07-04 | 歌尔声学股份有限公司 | Light-emitting diode device |
| CN203415612U (en) * | 2013-06-25 | 2014-01-29 | 宁波协源光电科技有限公司 | Bar type high-refractive-index LED packaging structure with red phosphor cured on green chip |
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