CN203377254U - Strip high light flux LED package structure with green chip and red fluorescence powder - Google Patents

Strip high light flux LED package structure with green chip and red fluorescence powder Download PDF

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Publication number
CN203377254U
CN203377254U CN201320374084.6U CN201320374084U CN203377254U CN 203377254 U CN203377254 U CN 203377254U CN 201320374084 U CN201320374084 U CN 201320374084U CN 203377254 U CN203377254 U CN 203377254U
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CN
China
Prior art keywords
cup
chip
fluorescence powder
red fluorescence
green glow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201320374084.6U
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Chinese (zh)
Inventor
应园
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Association Of Optoelectronics Polytron Technologies Inc
Original Assignee
NINGBO SHINING OPTOELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority to CN201320374084.6U priority Critical patent/CN203377254U/en
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Publication of CN203377254U publication Critical patent/CN203377254U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Led Device Packages (AREA)

Abstract

The utility model relates to a strip high light flux LED package structure with a green chip and red fluorescence powder. The structure comprises a bracket and a two electrode green light chip. The bracket comprises a bowl cup and a cup wall. The bowl cup is in a strip cuboid structure. The longitudinal section of the cup wall is triangular, and the cup wall is located on the edge of the bowl cup. The cup mouth of the cup wall is arc rectangular. The two electrode green light chip is arranged on the bowl cup. The two electrode green light chip is connected with electrodes on the bowl cup through two wires. A red fluorescent powder colloid layer is solidified around the two electrode green light chip. According to the utility model, the brightness is improved and the cost is reduced.

Description

The high light of strip that a kind of green chip adds red fluorescent material leads to the LED encapsulating structure
Technical field
The utility model relates to LED encapsulation technology field, particularly relates to the logical LED encapsulating structure of the high light of strip that a kind of green chip adds red fluorescent material.
Background technology
What in existing LED encapsulation, luminescence chip adopted is the AllnGaP chip, and because the AllnGaP chip is generally single electrode, during encapsulation, positive-negative polarity can't be flexible, the emission wavelength that AllnGaP is chip itself, its emission wavelength is non-adjustable, and AllnGaP chip material is more crisp, easily damages.Adopt the LED brightness of AllnGaP chip package lower, cost is higher simultaneously.
The utility model content
Technical problem to be solved in the utility model is to provide the logical LED encapsulating structure of the high light of strip that a kind of green chip adds red fluorescent material, can improve luminosity and reduce costs.
The utility model solves the technical scheme that its technical problem adopts: the high light of strip that provides a kind of green chip to add red fluorescent material leads to the LED encapsulating structure, comprises support and bipolar electrode green glow chip, and described support comprises bowl cup and a wall of cup; Described bowl cup is the strip rectangular structure; The longitudinal section of described wall of cup is triangle, and is positioned at the edge of bowl cup, and the rim of a cup of described wall of cup is the circular arc rectangle; On described bowl cup, described bipolar electrode green glow chip is installed, described bipolar electrode green glow chip is connected with the electrode on the bowl cup by two wires; Be solidified with the red fluorescence powder colloid layer around described bipolar electrode green glow chip.
Described bipolar electrode green glow chip is the InGaN chip.
Described red fluorescence powder colloid layer is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.
Beneficial effect
Owing to having adopted above-mentioned technical scheme, the utility model compared with prior art, has following advantage and good effect: the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can be regulated according to the concentration of red fluorescence powder, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected the InGaN chip, and this chip material is harder, can improve the product quality reliability.
The accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structural representation of rim of a cup in the utility model;
Fig. 3 is the relative spectral figure of the utility model medium green optical chip;
Fig. 4 is the relative spectral figure of red fluorescence powder in the utility model;
Fig. 5 is the relative spectral figure of encapsulating structure of the present utility model.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment only are not used in restriction scope of the present utility model for the utility model is described.Should be understood that in addition those skilled in the art can make various changes or modifications the utility model after the content of having read the utility model instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Execution mode of the present utility model relates to the logical LED encapsulating structure of the high light of strip that a kind of green chip adds red fluorescent material, as shown in Figure 1, comprises support 1 and bipolar electrode green glow chip 2, and described support 1 comprises bowl cup 11 and wall of cup 12; Described bowl cup 11 is the strip rectangular structure, the longitudinal section of described wall of cup 12 is triangle, and is positioned at the edge of bowl cup 11, and the rim of a cup of described wall of cup 12 is circular arc rectangle (see figure 2), wherein, the circular arc rectangle is two broadsides of standard rectangular to be replaced with to the rectangle of symmetrical arc; On described bowl cup 11, described bipolar electrode green glow chip 2 is installed, described bipolar electrode green glow chip 2 is connected with the electrode on bowl cup 11 by two wires 3; Described bipolar electrode green glow chip 2 outsides are solidified with red fluorescence powder colloid layer 4.Wherein, red fluorescence powder colloid layer 4 is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.Because the longitudinal section of wall of cup is triangle, the rim of a cup of wall of cup is the circular arc rectangle, thereby can increase luminous flux.
Wherein, described bipolar electrode green glow chip 2 is the InGaN chip.The utility model utilizes nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that the 515-535nm indium nitride sows the green glow chip of (InGaN), by regulating the concentration 5% to 70% of fluorescent material, thereby inspire the LED of any wavelength between 535nm-620nm.Table 1 is the product light kilsyth basalt obtained after green glow chip and variable concentrations fluorescent powder packaging.
Green glow chip wavelength/nm Fluorescent material concentration Brightness/mcd
515 5% 4315
517.5 12.8% 4256
520 20.7% 4187
522.5 31.8% 4109
525 42.95% 4045
527.5 55.7% 3987
530 70% 3902
Fig. 3 is the relative spectral figure of medium green optical chip of the present invention, Fig. 4 is the relative spectral figure of red fluorescence powder in the present invention, Fig. 5 is the relative spectral figure of encapsulating structure of the present invention, as can be seen from Figure 5, by the wavelength that can send after green glow chip excitated red fluorescent powder, is the 565nm green-yellow light.
Utilize nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that the 515-535nm indium nitride sows more than the brightness of the LED encapsulating structure that the green glow chip of (InGaN) obtains can reach 3900mcd, and the brightness of the LED encapsulating structure that only uses the AllnGaP chip to obtain is 2000mcd.
Manufacturing process of the present utility model is as follows:
A kind of method for packing of above-mentioned Novel LED encapsulating structure comprises the following steps:
(1) bipolar electrode green glow chip is placed on to the bowl cup above, and by wire, bipolar electrode green glow chip is connected with the electrode on the bowl cup.Wherein, bipolar electrode green glow chip can be the InGaN chip.
(2) preparation red fluorescence powder colloid layer, its concrete sub-step is at room temperature stirring 2-5 minute by red fluorescence powder and epoxy resin or silica gel, and rotating speed during stirring is 2000-3000 rev/min.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, and concentration is 5%-70%.By the mode stirred, can make red fluorescence powder be uniformly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) the red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made red fluorescence powder colloid layer parcel green glow chip.
(4) solidify the red fluorescence powder colloid layer and complete encapsulation.
Be not difficult to find, the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can be regulated according to the concentration of fluorescent material, and implementation is flexible and changeable.
Bipolar electrode green glow chip in the utility model can be selected the InGaN chip, and this chip material is harder, can improve the product quality reliability.

Claims (3)

1. the logical LED encapsulating structure of the high light of strip that green chip adds red fluorescent material, comprise support (1) and bipolar electrode green glow chip (2), it is characterized in that, described support (1) comprises bowl cup (11) and wall of cup (12); Described bowl cup (11) is the strip rectangular structure, and the longitudinal section of described wall of cup (12) is triangle, and is positioned at the edge of bowl cup (11), and the rim of a cup of described wall of cup (12) is the circular arc rectangle; On described bowl cup (11), described bipolar electrode green glow chip (2) is installed, described bipolar electrode green glow chip (2) is connected with the electrode on bowl cup (11) by two wires (3); Described bipolar electrode green glow chip (2) is solidified with red fluorescence powder colloid layer (4) on every side.
2. the high light of strip that green chip according to claim 1 adds red fluorescent material leads to the LED encapsulating structure, it is characterized in that, described bipolar electrode green glow chip (2) is the InGaN chip.
3. the high light of strip that green chip according to claim 1 adds red fluorescent material leads to the LED encapsulating structure, it is characterized in that, described red fluorescence powder colloid layer (4) is stirred and formed by red fluorescence powder and epoxy resin or silica gel.
CN201320374084.6U 2013-06-25 2013-06-25 Strip high light flux LED package structure with green chip and red fluorescence powder Expired - Fee Related CN203377254U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320374084.6U CN203377254U (en) 2013-06-25 2013-06-25 Strip high light flux LED package structure with green chip and red fluorescence powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320374084.6U CN203377254U (en) 2013-06-25 2013-06-25 Strip high light flux LED package structure with green chip and red fluorescence powder

Publications (1)

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CN203377254U true CN203377254U (en) 2014-01-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103354262A (en) * 2013-06-25 2013-10-16 宁波协源光电科技有限公司 Structure and method for packaging strip-shaped high-luminous-flux LED formed by green chip and red phosphor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103354262A (en) * 2013-06-25 2013-10-16 宁波协源光电科技有限公司 Structure and method for packaging strip-shaped high-luminous-flux LED formed by green chip and red phosphor

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C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village

Patentee after: Ningbo Association of Optoelectronics Polytron Technologies Inc

Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village

Patentee before: Ningbo Shining OptoElectronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140101

Termination date: 20210625

CF01 Termination of patent right due to non-payment of annual fee