CN203415614U - Rectangular type high-light-flux LED packaging structure with red phosphor cured on green chip - Google Patents

Rectangular type high-light-flux LED packaging structure with red phosphor cured on green chip Download PDF

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Publication number
CN203415614U
CN203415614U CN201320370058.6U CN201320370058U CN203415614U CN 203415614 U CN203415614 U CN 203415614U CN 201320370058 U CN201320370058 U CN 201320370058U CN 203415614 U CN203415614 U CN 203415614U
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CN
China
Prior art keywords
cup
chip
green glow
electrode green
bipolar electrode
Prior art date
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Expired - Fee Related
Application number
CN201320370058.6U
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Chinese (zh)
Inventor
应园
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Association of Optoelectronics Polytron Technologies Inc
Original Assignee
NINGBO SHINING OPTOELECTRONICS Co Ltd
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Priority to CN201320370058.6U priority Critical patent/CN203415614U/en
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Publication of CN203415614U publication Critical patent/CN203415614U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a rectangular type high-light-flux LED packaging structure with red phosphor cured on a green chip. The structure comprises a support and the double-electrode green light chip. The support comprises a bowl cup and a cup wall. The bowl cup has a rectangular structure. The vertical section of the cup wall is triangular and located on the edge of the bowl cup. The cup opening of the cup wall is of a filleted rectangle shape. The upper surface of the bowl cup is provided with the double-electrode green light chip. The double-electrode green light chip is connected with electrodes on the bowl cup through two leads. A red phosphor colloid layer is cured on the outer side of the double-electrode green light chip. The structure can increase the illumination brightness and meanwhile lower the cost.

Description

Green chip adds the logical LED encapsulating structure of the high light of rectangle of red fluorescent material
Technical field
The utility model relates to LED encapsulation technology field, particularly relates to the logical LED encapsulating structure of the high light of rectangle that a kind of green chip adds red fluorescent material.
Background technology
What in existing LED encapsulation, luminescence chip adopted is AllnGaP chip, and because AllnGaP chip is generally single electrode, during encapsulation, positive-negative polarity cannot be flexible, AllnGaP is the emission wavelength of chip itself, its emission wavelength is non-adjustable, and AllnGaP chip material is more crisp, easily damages.Adopt the LED brightness of AllnGaP chip package lower, cost is higher simultaneously.
Utility model content
Technical problem to be solved in the utility model is to provide the logical LED encapsulating structure of the high light of rectangle that a kind of green chip adds red fluorescent material, can improve luminosity and reduce costs.
The utility model solves the technical scheme that its technical problem adopts: the logical LED encapsulating structure of the high light of rectangle that provides a kind of green chip to add red fluorescent material, comprise support and bipolar electrode green glow chip, and described support comprises bowl cup and a wall of cup; Described bowl cup is rectangle structure; The longitudinal section of described wall of cup is triangle, and is positioned at the edge of bowl cup, and the rim of a cup of described wall of cup is round rectangle; On described bowl cup, described bipolar electrode green glow chip is installed, described bipolar electrode green glow chip is connected with the electrode on bowl cup by two wires; Described bipolar electrode green glow chip outside is solidified with red fluorescence powder colloid layer.
Described bipolar electrode green glow chip is InGaN chip.
Described red fluorescence powder colloid layer is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.
Beneficial effect
Owing to having adopted above-mentioned technical scheme, the utility model compared with prior art, has following advantage and good effect: the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can regulate according to the concentration of red fluorescence powder, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected InGaN chip, and this chip material is harder, can improve product quality reliability.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structural representation of rim of a cup in the utility model;
Fig. 3 is the relative spectral figure of the utility model medium green optical chip;
Fig. 4 is the relative spectral figure of red fluorescence powder in the utility model;
Fig. 5 is the relative spectral figure of encapsulating structure of the present utility model.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment are only not used in restriction scope of the present utility model for the utility model is described.In addition should be understood that those skilled in the art can make various changes or modifications the utility model after having read the content of the utility model instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Execution mode of the present utility model relates to the logical LED encapsulating structure of the high light of rectangle that a kind of green chip adds red fluorescent material, as shown in Figure 1, comprises support 1 and bipolar electrode green glow chip 2, and described support 1 comprises bowl cup 11 and wall of cup 12; Described bowl cup 11 is rectangle structure; The longitudinal section of described wall of cup 12 is triangle, and is positioned at the edge of bowl cup 11, and the rim of a cup of described wall of cup 12 is round rectangle (see figure 2), and wherein, round rectangle is four angles of standard rectangular to be replaced with to the rectangle at symmetric, arc angle; The upper surface of described bowl cup 11 is provided with described bipolar electrode green glow chip 2, and described bipolar electrode green glow chip 2 is connected with the electrode on bowl cup 11 by two wires 3; Described bipolar electrode green glow chip 2 is solidified with red fluorescence powder colloid layer 4 around.Wherein, red fluorescence powder colloid layer 4 is stirred and is formed by red fluorescence powder and epoxy resin or silica gel.Because the longitudinal section of wall of cup is triangle, the rim of a cup of wall of cup is round rectangle, thereby can increase luminous flux.
Wherein, the height of described red fluorescence powder colloid layer 4 is identical with the height of described wall of cup 12.Described bipolar electrode green glow chip 2 is InGaN chip.The utility model utilizes nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that 515-535nm indium nitride sows the green glow chip of (InGaN), by regulating the concentration 5% to 70% of fluorescent material, thereby inspire the LED of any wavelength between 535nm-620nm.Table 1 is the product light kilsyth basalt obtaining after green glow chip and variable concentrations fluorescent powder packaging.
Green glow chip wavelength/nm Fluorescent material concentration Brightness/mcd
515 5% 4308
517.5 12.8% 4247
520 20.7% 4180
522.5 31.8% 4106
525 42.95% 4043
527.5 55.7% 3984
530 70% 3900
Fig. 3 is the relative spectral figure of medium green optical chip of the present invention, Fig. 4 is the relative spectral figure of red fluorescence powder in the present invention, Fig. 5 is the relative spectral figure of encapsulating structure of the present invention, as can be seen from Figure 5, by the wavelength that can send after green glow chip excitated red fluorescent powder, is 565nm green-yellow light.
Utilizing nitride red fluorescent powder (SrCa) AlSiN3:Eu/CaAlSin3:Eu to add that 515-535nm indium nitride sows more than the brightness of the LED encapsulating structure that the green glow chip of (InGaN) obtains can reach 3900mcd, is 2000mcd and only use the brightness of the LED encapsulating structure that AllnGaP chip obtains.
Manufacturing process of the present utility model is as follows:
Green chip adds a method for packing for the logical LED encapsulating structure of the high light of rectangle of red fluorescent material, comprises the following steps:
(1) bipolar electrode green glow chip is placed on to the upper surface of bowl cup, and by wire, bipolar electrode green glow chip is connected with the electrode on bowl cup.Wherein, bipolar electrode green glow chip can be InGaN chip.
(2) preparation red fluorescence powder colloid layer, its concrete sub-step is at room temperature stirring 2-5 minute by red fluorescence powder and epoxy resin or silica gel, and rotating speed during stirring is 2000-3000 rev/min.Wherein, red fluorescence powder is (SrCa) AlSiN3:Eu/CaAlSin3:Eu, accounts for the 5%-70% of oeverall quality.By the mode stirring, can make red fluorescence powder be uniformly distributed, thereby make the luminous more even of LED encapsulating structure.
(3) red fluorescence powder colloid layer is clicked and entered in the bowl cup of support, made red fluorescence powder colloid layer parcel green glow chip.
(4) solidify red fluorescence powder colloid layer and complete encapsulation.
Be not difficult to find, the utility model adopts bipolar electrode green glow chip, and when encapsulation, polarity can be carried out accommodation as required, and operability is stronger.Glow color of the present utility model can regulate according to the concentration of fluorescent material, and implementation is flexible and changeable.Bipolar electrode green glow chip in the utility model can be selected InGaN chip, and this chip material is harder, can improve product quality reliability.

Claims (2)

1. green chip adds the logical LED encapsulating structure of the high light of rectangle of red fluorescent material, comprises support (1) and bipolar electrode green glow chip (2), it is characterized in that, described support (1) comprises bowl cup (11) and wall of cup (12); Described bowl cup (11) is rectangle structure; The longitudinal section of described wall of cup (12) is triangle, and is positioned at the edge of bowl cup (11), and the rim of a cup of described wall of cup (12) is round rectangle; The upper surface of described bowl cup (11) is provided with described bipolar electrode green glow chip (2), and described bipolar electrode green glow chip (2) is connected with the electrode on bowl cup (11) by two wires (3); Described bipolar electrode green glow chip (2) is solidified with red fluorescence powder colloid layer (4) around.
2. the logical LED encapsulating structure of the high light of rectangle that green chip according to claim 1 adds red fluorescent material, is characterized in that, described bipolar electrode green glow chip (2) is InGaN chip.
CN201320370058.6U 2013-06-25 2013-06-25 Rectangular type high-light-flux LED packaging structure with red phosphor cured on green chip Expired - Fee Related CN203415614U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320370058.6U CN203415614U (en) 2013-06-25 2013-06-25 Rectangular type high-light-flux LED packaging structure with red phosphor cured on green chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320370058.6U CN203415614U (en) 2013-06-25 2013-06-25 Rectangular type high-light-flux LED packaging structure with red phosphor cured on green chip

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103354264A (en) * 2013-06-25 2013-10-16 宁波协源光电科技有限公司 Structure and method for packaging rectangular high-luminous-flux LED formed by green chip and red phosphor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103354264A (en) * 2013-06-25 2013-10-16 宁波协源光电科技有限公司 Structure and method for packaging rectangular high-luminous-flux LED formed by green chip and red phosphor

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ASS Succession or assignment of patent right

Owner name: NINGBO DONGLONG OPTOELECTRONIC TECHNOLOGY CO., LTD

Free format text: FORMER OWNER: NINGBO SHINING OPTOELECTRONICS CO., LTD.

Effective date: 20140311

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Effective date of registration: 20140311

Address after: 315327, Cixi, Zhejiang province Ningbo City, East Town, Yu Yu Road, No. 218

Patentee after: Ningbo Donglong Optoelectronic Technology Co., Ltd.

Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village

Patentee before: Ningbo Shining OptoElectronics Co., Ltd.

ASS Succession or assignment of patent right

Owner name: NINGBO SHINING OPTOELECTRONICS CO., LTD.

Free format text: FORMER OWNER: NINGBO DONGLONG OPTOELECTRONIC TECHNOLOGY CO., LTD.

Effective date: 20140902

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20140902

Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village

Patentee after: Ningbo Shining OptoElectronics Co., Ltd.

Address before: 315327, Cixi, Zhejiang province Ningbo City, East Town, Yu Yu Road, No. 218

Patentee before: Ningbo Donglong Optoelectronic Technology Co., Ltd.

C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village

Patentee after: Ningbo Association of Optoelectronics Polytron Technologies Inc

Address before: 315327, Ningbo, Zhejiang province Cixi City East Zhen Zhen Dong Village

Patentee before: Ningbo Shining OptoElectronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140129

Termination date: 20200625

CF01 Termination of patent right due to non-payment of annual fee