CN103682036A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN103682036A
CN103682036A CN201310110435.7A CN201310110435A CN103682036A CN 103682036 A CN103682036 A CN 103682036A CN 201310110435 A CN201310110435 A CN 201310110435A CN 103682036 A CN103682036 A CN 103682036A
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CN
China
Prior art keywords
described
molding assembly
light
upper surface
luminescence chip
Prior art date
Application number
CN201310110435.7A
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Chinese (zh)
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CN103682036B (en
Inventor
尹汝赞
郑在桓
吴成株
金镇成
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Lg伊诺特有限公司
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Priority to KR10-2012-0101820 priority Critical
Priority to KR1020120101820A priority patent/KR101997243B1/en
Application filed by Lg伊诺特有限公司 filed Critical Lg伊诺特有限公司
Publication of CN103682036A publication Critical patent/CN103682036A/en
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Publication of CN103682036B publication Critical patent/CN103682036B/en

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02Combinations of only two kinds of elements
    • F21V13/04Combinations of only two kinds of elements the elements being reflectors and refractors
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02Combinations of only two kinds of elements
    • F21V13/08Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091Scattering means in or on the semiconductor body or semiconductor body package
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

Abstract

Disclosed are a light emitting device. The light emitting device includes a body having a cavity; a plurality of lead frames in the cavity; a light emitting chip; a first molding member having a first metal oxide material around the light emitting chip; and a second molding member having a second metal oxide material on the first molding member and the light emitting chip, wherein the light emitting chip includes a reflective electrode layer under a light emitting structure, wherein a top surface of the first molding member extends from a region between a top surface of the light emitting chip and a lateral side of the reflective electrode layer at a predetermined curvature, and wherein a bottom surface of the second molding member includes a curved surface which is convex toward the first molding member.

Description

Light-emitting device

The application requires the priority of No. 10-2012-0101820th, the korean patent application submitted on September 13rd, 2012, and its full content is incorporated herein by reference.

Background technology

The embodiment of the present invention relates to light-emitting device and comprises the illuminator of this light-emitting device.

Light-emitting device, light-emitting diode (LED) for example, is the semiconductor device that is light by electric energy conversion, and instead conventional fluorescent and glow lamp light source of future generation and be widely used.

Because LED is by being used semiconductor device to produce light, therefore with by heating, tungsten produces the glow lamp of light or by exciting the ultraviolet ray producing by electrion to compare with the fluorescent lamp that the collision of fluorophor material produces light, LED can show low-power consumption.

In addition, because LED is by using the electrical potential difference of semiconductor device to produce light, therefore, compare with conventional light source, LED has advantage aspect life-span, response characteristic and environmental requirement.

In this respect, the various researchs of conventional light source have been carried out replacing with LED.LED is used as the light source of lighting device, various lamps, liquid crystal display, electronic marker board and street lamp that this lighting device for example uses for indoor and outdoors progressively.

Summary of the invention

The embodiment of the present invention provides a kind of light-emitting device, wherein, around the upper surface of the first molding assembly luminescence chip, that have the first metal oxide materials, is positioned to the upper surface lower than this luminescence chip.

The embodiment of the present invention provides a kind of light-emitting device, it comprises around the first molding assembly of luminescence chip and is arranged in the second molding assembly on the first molding assembly, wherein, the lower surface of the second molding assembly comprises the curved surface protruding towards the direction of the first molding assembly.

The embodiment of the present invention provides a kind of light-emitting device, comprises the first molding assembly, and extend with predetermined curvature in its upper surface from luminescence chip and the region between reflection electrode layer.

The embodiment of the present invention provides a kind of light-emitting device, wherein, interface between the first molding assembly and the second molding assembly is present in the region between luminescence chip and the side in chamber, and interfacial minimum point is formed on from the horizontal line section of the upper surface of luminescence chip, corresponding to 30% or more depth of the thickness of luminescence chip.

The embodiment of the present invention provides a kind of light-emitting device, and it comprises: the first molding assembly, and it has the first metal oxide materials around luminescence chip; And second molding assembly, it has the second metal oxide materials on the first molding assembly and luminescence chip.

The embodiment of the present invention provides a kind of illuminator that comprises light-emitting device, and this light-emitting device has improved light extraction efficiency.

According to the light-emitting device of the embodiment of the present invention, comprise: main body, it has chamber; A plurality of lead frames, it is positioned at this chamber; Luminescence chip, it is positioned at least one lead frame; The first molding assembly, it is around luminescence chip, and wherein the first metal oxide materials is added to the first molding assembly; And second molding assembly, it is positioned on the first molding assembly and luminescence chip, and wherein the second metal oxide materials is added to the second molding assembly, and wherein, luminescence chip comprises: ray structure, it comprises a plurality of compound semiconductor layers; And reflection electrode layer, it is positioned under ray structure, wherein, the upper surface of the first molding assembly extends with predetermined curvature from the region between the upper surface of luminescence chip and the side of reflection electrode layer, and wherein the lower surface corresponding to the second molding assembly of the upper surface of the first molding assembly comprises curved surface, and this curved surface protrudes to the first molding assembly.

According to the light-emitting device of the embodiment of the present invention, comprise: main body, it has chamber; A plurality of lead frames, it is positioned at this chamber; Luminescence chip, it is positioned at least one lead frame; The first molding assembly, it is around luminescence chip, and wherein the first metal oxide materials is added to the first molding assembly; And second molding assembly, it is positioned on the first molding assembly and luminescence chip, and wherein the second metal oxide materials adds the second molding assembly to, and wherein, luminescence chip comprises: ray structure, it comprises a plurality of compound semiconductor layers; And reflection electrode layer, it is positioned under ray structure, wherein, the upper surface of the first molding assembly is configured lower than the upper surface of luminescence chip, and wherein, the minimum point of upper surface of the interval between the peak of the upper surface of the first molding assembly and the lower surface in chamber and the first molding assembly and the difference at the interval between the lower surface in chamber are in 30% to 70% scope of the thickness of luminescence chip.

Accompanying drawing explanation

Fig. 1 is according to the vertical view of the light-emitting device of the first embodiment;

Fig. 2 is the sectional view along the A-A line of Fig. 1;

Fig. 3 is the partial enlarged drawing of Fig. 2;

Fig. 4 is the sectional view along the B-B line of Fig. 1;

Fig. 5 is the side cross-sectional view illustrating according to the light-emitting device of the second embodiment;

Fig. 6 is the side cross-sectional view illustrating according to the light-emitting device of the 3rd embodiment;

Fig. 7 is the side cross-sectional view illustrating according to the light-emitting device of the 4th embodiment;

Fig. 8 is the side cross-sectional view illustrating according to the light-emitting device of the 5th embodiment;

Fig. 9 is the side cross-sectional view illustrating according to the light-emitting device of the 6th embodiment;

Figure 10 is the side cross-sectional view illustrating according to the light-emitting device of the 7th embodiment;

Figure 11 to Figure 13 is the side cross-sectional view illustrating according to the light-emitting device of the 8th embodiment;

Figure 14 is the figure illustrating according to the example of the luminescence chip of the light-emitting device of embodiment;

Figure 15 is that explanation is according to the luminous flux of the light-emitting device with molding assembly of embodiment and comparative example and the form of illumination;

Figure 16 is that diagram is according to the figure of the directional characteristic of the light-emitting device with molding assembly of embodiment and comparative example;

Figure 17 is that diagram is according to the curve chart of the deflection of the light-emitting device of embodiment;

Figure 18 illustrates the stereogram having according to the display device of the light-emitting device of embodiment;

Figure 19 is the sectional view illustrating according to the display device of embodiment; And

Figure 20 illustrates the exploded perspective view having according to the lighting device of the light-emitting device of embodiment.

Embodiment

In to the description of embodiment, be to be understood that, when substrate, framework, sheet, layer or pattern be called as another substrate, another framework, another sheet, another layer or another pattern " on " time, it can be that " directly " or " indirectly " is on another substrate that also can exist, another framework, another sheet, another layer or another pattern.By contrast, when a part be called as " directly " another part " on " time, there is not intermediate layer.The position of layer so is described in the accompanying drawings.For purposes of illustration, the size of the element shown in accompanying drawing may be exaggerated, and the size of element does not reflect real size utterly.

Hereinafter, with reference to accompanying drawing and the description to embodiment, those skilled in the art will be expressly understood embodiment.Object for convenience or clearly, the thickness of the every one deck shown in accompanying drawing and size may be exaggerated, be omitted or schematically be drawn.In addition, the size of not absolute reaction of the size reality of element.In institute's drawings attached, the element to identical is adopted to identical Reference numeral.

Hereinafter, the light-emitting device according to embodiment is described with reference to the accompanying drawings.

Fig. 1 illustrates according to the vertical view of the light-emitting device of the first embodiment, and Fig. 2 illustrates the sectional view obtaining along the A-A line of Fig. 1, and Fig. 3 is the sectional view that the B-B line along Fig. 1 obtains.

Referring to figs. 1 through Fig. 3, light-emitting device 10 comprises main body 11, a plurality of lead frame 13 and 14, the first molding assembly 15, the second molding assembly 17 and the luminescence chip 19 with chamber 11A.

Main body 11 comprises insulating material or electric conducting material.Main body 11 can comprise resin material (for example PPA(polyphthalamide)), Si, metal material, PSG(photosensitive glass), Al2O3 and PCB(printed circuit board (PCB)) at least one.For example, main body 11 can for example, be formed by resin material (PPA), epoxy resin or silicon.The first molding assembly 15 and the second molding assembly 17 can be formed by identical material, silicon for example, but the embodiment of the present invention is not limited to this.

When watching in vertical view, main body 11 can be formed polygon (for example triangle, rectangle or pentagon), circle or have the structure of the shape of curved edge.

Main body 11 can comprise a plurality of sides.For example, main body 11 can comprise four sides 1 to 4.At least one in side 1 to 4 can the vertical or inclination with respect to the lower surface of main body 11.As an example, first to fourth side 1 to 4 is described, wherein, the first side 1 and the second side 2 are opposite each other, and the 3rd side 3 and the 4th side 4 are adjoined with the first side 1 and the second side 2 and are opposite each other.The width of the first side 1 and the second side 2 or length can be equal in length or different from the width of the 3rd side 3 and the 4th side 4, but the embodiment of the present invention is not limited to this.

Main body 11 can comprise the top of opening and have the chamber 11A of cup-shape or concave shape.Lead frame 13 and 14 can expose by the bottom of chamber 11A, and chamber 11A can have medial surface 1A to 4A.The medial surface 1A to 4A of chamber 11A is corresponding with side 1 to 4 respectively.

At least one in the medial surface 1A to 4A of chamber 11A is can be with respect to the lead frame 13 of main body 11 vertical with 14 upper surface or tilt, but the embodiment of the present invention is not limited to this.

The first lead frame 13 extends to the below of the 3rd medial surface 3A from the central area of chamber 11A.The second lead frame 14 is corresponding with the first lead frame 13, and extends to the below of the 4th medial surface 4A in the 11A of chamber.

The first lead frame 13 and the second lead frame 14 can comprise groove and/or hole, and can have upper surface and the lower surface aliging on horizontal plane.For example, the upper surface of the first lead frame 13 and the second lead frame 14 can align in same level.

The first lead frame 13 can be disposed in the below of the 3rd side 3 of main body 11, or outwards outstanding from the 3rd side 3.The second lead frame 14 can be disposed in the below of the 4th side 4 of main body 11, or outwards outstanding from the 4th side 4.

The thickness of the first lead frame 13 and the second lead frame 14 can be in the scope of 0.15mm to 0.8mm, or preferably in the scope of 0.5mm to 0.4mm.For example, the first lead frame 13 and the second lead frame 14 can comprise at least one metal material in Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag and P, and can be formed single metal layer or a plurality of metal level.The thickness of the first lead frame 13 can be identical with the thickness of the second lead frame 14, but the embodiment of the present invention is not limited to this.

Luminescence chip 19 is disposed on the first lead frame 13 and is exposed in the 11A of chamber, utilizes bonded assemblies 18 to be adhered on the first lead frame 13.Bonded assemblies 18 comprises electric conducting material.Luminescence chip 19 is connected to the second lead frame 14 by wire 23.

Luminescence chip 19 can optionally be launched ultraviolet band to the light within the scope of visible waveband.For example, can select one of red LED chips, blue led chip, green LED chip and yellow green LED chip as luminescence chip 19.Luminescence chip 19 can comprise at least one in III-V compound semiconductor and II-VI compound semiconductor.Can in the 11A of chamber, arrange one or more luminescence chips 19, but the embodiment of the present invention is not limited to this.Luminescence chip can be rectilinear chip, and it comprises anode electrode and the cathode electrode of arranging in the vertical respectively; Flip-over type chip, it comprises anode electrode and the cathode electrode of arranging in one direction; Or transverse type chip, it comprises utmost point electrode and the cathode electrode adjoining each other.In addition, luminescence chip 19 can have within the scope of 0.5mm * 0.5mm to 1.5mm * 1.5mm, or preferably, the level within the scope of 0.5mm * 0.5mm to 1mm * 1mm and vertically length, but the embodiment of the present invention is not limited to this.The thickness of luminescence chip 19 can be in the scope of 100 μ m to 300 μ m.

In at least one that can be in lead frame 13 and 14, arrange protection chip, for example voltage stabilizing didoe, thyristor or TVS(transient voltage suppressing), but the embodiment of the present invention is not limited to this.

The first molding assembly 15 is disposed in around luminescence chip 19, contacts with all side S1 to S4 of luminescence chip 19.The first molding assembly 15 comprises the material by adding silicon materials to obtain the first metal oxide materials 5.The first metal oxide materials 5 is materials of high index of refraction, and comprises TiO 2.Add the amount of the first metal oxide materials 5 of the first molding assembly 15 can be in the scope of 5wt% to 15wt%, or preferably in the scope of 10wt% to 15wt%.As another example, the first metal oxide materials 5 adding can be in the scope of 10wt% to 12.5wt%.The refractive index of the silicon materials of the first molding assembly 15 is in 1.51 to 1.55 scope.Can use silicon materials lead frame 13 and main body 11 to good bond strength.The wide part producing from luminescence chip 19 is sent along upward direction, and the light producing from luminescence chip 19 40% or still less along side direction, send.Can reflect the light sending along the side direction of luminescence chip 19 with the first molding assembly 15, and according to light emission characteristics, the most light that luminescence chip 19 produces can send by upper surface.

The first molding assembly 15 is carried out the function in reflector, 70% or more light that it sends from luminescence chip 19 by the first metal oxide materials 5 reflections.Because the first molding assembly 15 is as reflector, therefore can effectively reflect the light sending along side direction from luminescence chip 19.Because the first molding assembly 15 is adhered to the side S1 to S4 of luminescence chip 19, therefore, when consider to send from luminescence chip 19 direction of light characteristic time, it is horizontal direction for the first axial X-X() on beam distribution and the second axial Y-Y(its be vertical direction) on beam distribution basic identical.

Referring to Fig. 2 and Fig. 3, the upper surface of the first molding assembly 15 comprises curved surface.This Surface forming is between the medial surface 1A of chamber 11A and the side S1 and the peak of S2 of 2A and luminescence chip 19.The peak of luminescence chip 19 is lower than the horizontally extending line of the upper surface from luminescence chip 19, and the minimum point of luminescence chip 19 is formed between the medial surface 1A of chamber 11A and the side S1 and S2 of 2A and luminescence chip 19.The curvature of curved surface can be in the scope of 0.05mm to 0.1mm.This curvature can for example, change with viscosity, impurity (metal oxide materials adding) and the side S1 of medial surface A1 and A2 and luminescence chip 19 of silicon materials and the interval between S2.

Interface between the first molding assembly 15 and the second molding assembly 17 has the curve form of depression.The minimum point of curved surface of depression can be lower than the upper surface of luminescence chip 19, and can form at the thickness place in 30% to 70% scope of the thickness T 1 of luminescence chip 19.

The first molding assembly 15 covers all sides of luminescence chip 19, so that the light that reflection is sent along the side surface direction of luminescence chip 19.Due to the curved surface of the depression of the first molding assembly 15, the contact area between the first molding assembly 15 and the second molding assembly 17 can be increased, and can reflect with any other direction from the surface of luminescence chip 19 light of incident again.Therefore, the curved surface due to depression, can improve light extraction efficiency.In addition, the curved surface of the depression of the first molding assembly 15 can be carried out the function on for example dam that receives the moisture that penetrates the second molding assembly 17.Therefore,, due to the degree of depth of the depression curved surface of the first molding assembly 15, can improve bonding strength, light extraction efficiency and moisture penetration restriction effect.

Because the upper surface of the first molding assembly 15 and the contact point of luminescence chip 19 are formed on the height identical with the upper surface of luminescence chip 19, therefore the first molding assembly 15, luminescence chip 19 and the second molding assembly 17 can be bonded to each other at the fringe region place of luminescence chip 19.Like this, can improve the bonding strength at the fringe region place of luminescence chip 19.

The degree of depth of the upper surface R2 of the first molding assembly 15, the minimum point of curved surface, spaced apart with the medial surface 4A of chamber 11A and the side of luminescence chip 19, and be formed on desired depth Y1 from the extended line of the upper surface of luminescence chip 19.For example, minimum point degree of depth Y1 can be formed on the position in 30% to 70% scope of thickness T 1 of luminescence chip 19, apart from the degree of depth 0.3T1≤X1≤0.7T1 of the upper surface of luminescence chip 19, preferably, 0.4T1≤X1≤0.6T1.The minimum thickness X1 of the first molding assembly 15 is the intervals between the minimum point of curved surface and the upper surface of lead frame 13, and for example, it can be formed in the scope of 0≤X1≤0.7T1, and wherein T1 is in the scope of 100 μ m to 300 μ m.The minimum thickness X1 of the first molding assembly 15 or the position of minimum point can be passed through the content of the first metal oxide materials 5 and the medial surface 1A of material and luminescence chip 19 and chamber 11A and the interval between 2A and determine, and when the position of the minimum point of the upper surface of the first molding assembly 15 is lower, because curvature or thickness X 1 exceed this scope, therefore may reduce light extraction efficiency or moisture penetration restriction effect and bonding strength effect.

The light that the first molding assembly 15 sends from luminescence chip 19 side direction in the offside reflection of luminescence chip 19, to can improve the light extraction efficiency on optical axis direction.

As shown in Figure 2 and Figure 4, the first molding assembly 15 is disposed in the second to the 4th region A2 to A4 except the first area A1 of luminescence chip 19.Second area A2 is present between two side S1 and S2 and the first medial surface 1A and the second medial surface 2A of luminescence chip 19.

Referring to Fig. 3 and Fig. 4, the 3rd region A3 and the 4th region A4 can be the regions between the side S3 of luminescence chip 19 and the 3rd medial surface 3A of S4 and chamber 11A and the 4th medial surface 4A.The upper surface R2 that is disposed in the first molding assembly 15 in the 4th region A4 can have the curvature different from the curvature of the upper surface in other region, but the embodiment of the present invention is not limited to this.

As shown in Figure 3, luminescence chip 19 comprises the reflection electrode layer 19A being positioned under the ray structure with a plurality of compound semiconductor layers.The upper surface R2 of the first molding assembly 15 can extend from the region between the upper surface of luminescence chip 19 and the side of reflection electrode layer 19A with predetermined curvature.For example, the upper surface R2 of the first molding assembly 15 can extend to the upper surface of luminescence chip 19 medial surface 1A and the 2A of chamber 11A.

The height of the contact point of the upper surface of the first molding assembly 15 and luminescence chip 19 (X1+Y1) can be equal to or greater than the height of the contact point of the upper surface of the first molding assembly and the medial surface 1A to 4A of chamber 11A.

Herein, the upper surface R2 of the first molding assembly 15 can have the curvature in 0.05mm to 1mm scope.The curvature of the lower surface that the upper surface R2 with the first molding assembly 15 of the second molding assembly 17 is corresponding can equal the curvature of the upper surface R2 of the first molding assembly 15.

Reflection electrode layer 19A is disposed in 15 μ m or less interval.Like this, the first molding assembly 15 light of reflection quilt reflection electrode layer 19A and active layer reflection effectively.Herein, for light extraction efficiency, the upper surface of the first molding assembly 15 is disposed in the top of reflection electrode layer 19A, to improve the extraction efficiency of the light of reflection electrode layer 19A reflection.

The second molding assembly 17 contacts with the upper surface R2 of the first molding assembly 15 with luminescence chip 19.Because the upper surface R2 of the first molding assembly 15 is formed curved surface, therefore can increases the contact area of the first molding assembly 15 and the second molding assembly 17, thereby can increase the bonding strength between the first molding assembly 15 and the second molding assembly 17.Interface between the first molding assembly 15 and the second molding assembly 17 forms with the curvature of curved surface R2, and interfacial minimum point is the minimum point of the upper surface of the first molding assembly 15.

The second molding assembly 17 can be formed by the material that has a good adhesive property with the first molding assembly 15.For example, the second molding assembly 17 can be formed by the material identical with the first molding assembly 15.The curvature that the upper surface of the second molding assembly 17 can be greater than the upper surface of the first molding assembly 15 with curvature formation and its curvature of depression.

The second molding assembly 17 contacts with the upper surface of luminescence chip 19 with the upper surface R2 of the first molding assembly 15.The second metal oxide materials 7 is added into the silicon materials of the second molding assembly 17.The first metal oxide materials 5 and the second metal oxide materials 7 can have different refraction coefficient mutually.For example, the refraction coefficient of the first metal oxide materials 5 can be greater than the refraction coefficient of the second metal oxide materials 7.

The second metal oxide materials 7 can be used as to be had the material of higher curvature and is added in the second molding assembly 17, and can comprise the material dissimilar with the first metal oxide materials 5 that adds the first molding assembly 15 to.For example, the second metal oxide materials 7 comprises SiO2.

As another example, the first metal oxide materials 5 can comprise that at least one reflection coefficient is 0.7 or less material, for example Al 2o 3or MgO.The second metal oxide materials 7 can comprise that at least one reflection coefficient is 2.0 or larger material, for example Ta 2o 5or ZrO 2.In addition, any other material can form the first metal oxide materials 5 and the second metal oxide materials 7, but the embodiment of the present invention is not limited to this.The first metal oxide materials 5 and the second metal material 7 are formed by the material based on metal oxide, comprise metal oxide material, metal oxide powder, metal oxide particle or metal oxide pigment.

The amount of adding the second metal oxide materials 7 of the second molding assembly 17 to can be in the scope of 5wt% to 15wt%, preferably, and in the scope of 10wt% to 15wt%.As another example, the amount of the second metal oxide materials 7 of interpolation can be in the scope of 10wt% to 12.5wt%.The second molding assembly 17 is by adding the second metal oxide materials 7 to resin bed that silicon materials obtain, and as diffusion layer.The second molding assembly 17 allows the light sending straight up from luminescence chip 19 by the first molding assembly 15 to be uniformly distributed diffusion.The content that adds the first metal oxide materials 5 of the first molding assembly 15 to can be greater than the content that adds the second metal oxide materials 7 in the second molding assembly 17 to.

The refractive index of the silicon materials of the first molding assembly 15 is in 1.51 to 1.55 scope.Can use have and the second molding assembly 17 and main body 11 between the material of good bonding strength as the material of the first molding assembly 15.When the first molding assembly 15 and the second molding assembly 17 are formed by identical material, can prevent occurring that bubble or interface go on the interface between the first molding assembly 15 and the second molding assembly 17 bonding.

The minimum thickness Z1 of the second molding assembly 17 equals the upper surface of luminescence chip 19 and the interval between the second molding assembly 17, and can be arranged in the scope of to three times of thickness T 1 of luminescence chip 19.For example, the minimum thickness Z1 of the second molding assembly 17 can be in the scope of 150 μ m to 260 μ m.Like this, the depth D 1 of chamber 11A can be in the scope of 300 μ m to 500 μ m, but the embodiment of the present invention is not limited to this.The minimum thickness Z1 of the second molding assembly 17 can be formed to be larger than the thickness T 1 of luminescence chip 19, to can improve the blend of colors of the light in the second molding assembly 17.For example, can improve from the blue and blueness of Yellow luminous chip and the mixing of sodium yellow to white light emitting device can be provided.

The thickness of the second molding assembly 17 can be set to larger than the minimum thickness X1 of the first molding assembly 15.

As another example, the first molding assembly 15 and the second molding assembly 17 can be formed by the silicon materials that differ from one another.For example, the refringence between the first molding assembly 15 and the material of the second molding assembly 17 can be in 0.070 to 0.090 scope.For example, the refractive index of the silicon materials of the second molding assembly 17 can be larger than the refractive index of the silicon materials of the first molding assembly 15, and it is in 1.32 to 1.48 scope.

In addition, the refractive index of the first metal oxide materials 5 can be larger than the refractive index of the second metal oxide materials 7.The second metal oxide materials 7 can by have 0.5 or the material of larger refractive index form.

Can add fluorophor 6 to the second molding assembly 17.Fluorophor 6 is materials of the light wavelength sent on luminescence chip 19 of a kind of conversion.For example, fluorophor 6 can be from selecting in following group: YAG, TAG, silicate, nitride and nitrogen oxide.Fluorophor 6 can comprise at least one in red-emitting phosphors, yellow fluorophor, green-emitting phosphor and blue emitting phophor, but the embodiment of the present invention is not limited to this.

The upper surface 17A of the second molding assembly 17 can form dish, concave shape or convex shape, but the embodiment of the present invention is not limited to this.The upper surface of the second molding assembly 17 can be light-emitting area.Can on the upper surface of the second molding assembly 17, arrange optical lens.Optical lens can comprise convex lens, concavees lens and have the convex lens of specular reflection surface, but the embodiment of the present invention is not limited to this.

Meanwhile, add the location that the maximal density of the second metal oxide materials 7 in the second molding assembly 17 can be between the side of luminescence chip 19 and the medial surface 1A to 4A of chamber 11A to.The density of the second metal oxide materials 7 in the interfacial region of adjoining between the first molding assembly 15 and the second molding assembly 17 can be greater than the density in any other region.

Fig. 5 illustrates according to the sectional view of the light-emitting device of second embodiment of the invention.Below in the description of the second embodiment, by the description of combination to the first embodiment by reference.

Referring to Fig. 5, light-emitting device 10A comprises main body 11, lead frame 13, the first molding assembly 15, the second molding assembly 27, luminescent coating 16 and the luminescence chip 19 with chamber 11A.

Luminescent coating 16 is disposed on luminescence chip 19.Can form luminescent coating 16 by adding above-mentioned fluorophor to transparent resin layer, and its thickness is within the scope of 40 μ m to 70 μ m.If the thickness of luminescent coating 16 is too small, reduce the secondary colour of light, thereby may send, there is blue white light.If the thickness of luminescent coating 16 is excessive, may reduce light extraction efficiency.

Peak as the curved surface of the upper surface of the first molding assembly 15 is positioned at the position lower than the lower surface of luminescent coating 16, and the minimum point of this curved surface is positioned at the position lower than the upper surface of luminescence chip 19.The curved surface of the first molding assembly 15 can be the interface between the first molding assembly 15 and the second molding assembly 27.

Upper surface and the contacts side surfaces of the second molding assembly 27 and the first molding assembly 15 and luminescent coating 16.The second molding assembly 27 not with the Surface Contact of luminescence chip 19, to can reduce the hot impact being produced by luminescence chip 19.Interfacial curvature between the first molding assembly 15 and the second molding assembly 27 and the degree of depth can with in the first embodiment, describe identical, therefore, with reference to the description in the first embodiment.

The second metal oxide materials 7 can add the second molding assembly 27 to, and can to the second molding assembly 27, not add any specific fluorescent body.The second molding assembly 27 is propagated the light of being propagated by luminescent coating 16 again, to can effectively propagate and utilizing emitted light.

The upper surface 27A of the second molding assembly 27 can be formed the upper surface lower than main body 11.Can on the second molding assembly 27, be provided for the optical lens that luminous flux is controlled, but the embodiment of the present invention is not limited to this.

Fig. 6 illustrates according to the side cross-sectional view of the light-emitting device of the 3rd embodiment.Below in the description of the 3rd embodiment, by by reference in conjunction with the description of the first embodiment.

Referring to Fig. 6, light-emitting device 10B comprises lead frame 13, main body 11, the first molding assembly 15, the second molding assembly 17, luminescent coating 16, protection chip 29 and luminescence chip 19.

Protection chip 29 can be disposed in the first molding assembly 15 belows.On the lead frame of protecting chip 29 and luminescence chip 19 can be disposed in same lead frame 13 or differing from one another.For example, protection chip 29 can be disposed on the first lead frame 13 or the second lead frame 14 in Fig. 1.Can use bonded assemblies 28 that protection chip 29 is adhered on the first lead frame 13, but can change this electrical connection scheme.

The first molding assembly 15 is arranged in luminescence chip 19 around as reflector, and as the barrier between luminescence chip 19 and protection chip 29.Like this, although luminescence chip 19 adjoins or away from protection chip 29, almost without any by the light loss that causes of protection chip 29.

Fig. 7 illustrates according to the side cross-sectional view of the light-emitting device of the 4th embodiment.Below in the description of the 4th embodiment, by by reference in conjunction with the description of the first embodiment.

Referring to Fig. 7, light-emitting device 30 comprises lead frame 33, the first molding assembly 31, the second molding assembly 37, luminescent coating 36 and luminescence chip 19.

The first molding assembly 31 is disposed on lead frame 33.Lead frame 33 forms chamber 31A and carries out the function of main body as shown in Figure 2.The first molding assembly 31 can be formed by the silicon materials that are added with the first metal oxide materials 5, and can be by injecting in mould and the fluent material that hardens forms.The amount of adding the first metal oxide materials 5 of the first molding assembly 31 to can be in the scope of 5wt% to 15wt%, preferably, and in the scope of 10wt% to 15wt%.The first molding assembly 31 is 70% or larger for the reflectivity of the peak wavelength of the light from the transmitting of reflection luminescence chip 19, and can be that upper surface with respect to lead frame 33 is vertical or tilt.

The inner side part 31C of the first molding assembly 31 is disposed in chamber 31A below.The Outboard Sections 31B of the first molding assembly 31 can have predetermined curvature and than the steeper inclined surface of inner side part 31C.The upper surface of the Outboard Sections 31B of the first molding assembly 31 has the height identical with the upper surface of the second molding assembly 17, but the embodiment of the present invention is not limited to this.

The first molding assembly 31 comprises the inner side part 31C around luminescence chip 19, and inner side part 31C is formed on the height lower than luminescence chip 19.The upper surface R3 of inner side part 31C comprises the curved surface of depression.The inner side part 31C of the first molding assembly 31 can be formed on the height lower than the lower surface of luminescent coating 36.

In the minimum point of upper surface of the first molding assembly 31 and the interval X4 between the upper surface of lead frame 13 can 30% to 70% the scopes at the thickness of luminescence chip 19.

In addition, the minimum point of the upper surface of the first molding assembly 31 (its degree of depth is Y4) can be positioned at the degree of depth of 30% to 70% scope of thickness from the horizontal extension line of the upper surface of luminescence chip 19 to luminescence chip 19.Herein, the curvature of the inner side part 31C of the upper surface of the first molding assembly 35 is greater than the curvature of Outboard Sections 31B, but the embodiment of the present invention is not limited to this.

Fig. 8 illustrates according to the side cross-sectional view of the light-emitting device of the 5th embodiment.Below in the description of the 5th embodiment, by by reference in conjunction with the description of the first embodiment.

Referring to Fig. 8, the first light-emitting device 40 comprises lead frame 13, main body 41, the first molding assembly 45, the second molding assembly 47, the 3rd molding assembly 44, luminescent coating 36 and luminescence chip 19.

The 3rd molding assembly 44 is disposed between the first molding assembly 45 and the second molding assembly 47, and can be by comprising that at least one the silicon in the first metal oxide materials 5 and the second metal oxide materials 7 forms.A part for the 3rd molding assembly 44 is disposed in the position higher than the upper surface of luminescence chip 19, and can add the second metal oxide materials 7 as diffusant.The second metal oxide materials 7 is with 10wt% or less interpolation, so that the second metal oxide materials 7 is used as diffusion layer and can reduces the 3rd impact of molding assembly 44 on luminous flux or illumination.

The 3rd molding assembly 41 on the upper surface of the first molding assembly 45 has predetermined curvature, and contacts with the upper surface of the first molding assembly 45.The upper surface of the 3rd molding assembly 44 can be disposed under the extended line of upper surface of luminescent coating 36.The thickness Y3 of the 3rd molding assembly 44 can be in the scope of 40 μ m to 70 μ m.

The second molding assembly 47 can be formed on the 3rd molding assembly 44 and luminescent coating 36, and not with the Surface Contact of luminescence chip 19.Like this, can reduce the expansion that the thermal conductance transmitted by luminescence chip 19 causes.

Fig. 9 is according to the side cross-sectional view of the light-emitting device of sixth embodiment of the invention.Below in the description of the 6th embodiment, by by reference in conjunction with the description of the first embodiment.

Referring to Fig. 9, light-emitting device 50 comprises lead frame 13, main body 51, the first molding assembly 55, the second molding assembly 57, luminescent coating 56 and luminescence chip 19.

Luminescent coating 56 extends to the upper surface of the first molding assembly 55 from the upper surface of luminescence chip 19.Luminescent coating 56 covers the upper surface of luminescence chip 19 and the upper surface R2 of the first molding assembly 55.

Luminescent coating 56 comprises inner side part 56A and Outboard Sections 56B.The Outboard Sections 56B of luminescent coating 56 can contact with the upper surface R2 of the first molding assembly 55, to can prevent the disengaging of the inner side part 56A of luminescent coating 56.

The upper surface R7 of the Outboard Sections 56B of luminescent coating 56 can have the curved surface of depression and can contact with the second molding assembly 57.

The first metal oxide materials 5 is added to the first molding assembly 55, so that the first molding assembly 55 is as reflector, and the second metal oxide materials 7 is added to the second molding assembly 57, so that the second molding assembly is as diffusion layer.

Figure 10 illustrates according to the side cross-sectional view of the light-emitting device of seventh embodiment of the invention.Below in the description of the 7th embodiment, by by reference in conjunction with the description of the first embodiment.

Referring to Figure 10, light-emitting device 60 comprises lead frame 13, main body 61, the first molding assembly 65, the second molding assembly 67, luminescent coating 66 and luminescence chip 19.

Luminescent coating comprises the top 66A on the upper surface that is arranged in luminescence chip 19 and is arranged in the side S1 of luminescence chip 19 and the sidepiece 66B on S2.Luminescent coating 66 is adhered to upper surface and side S1 and the S2 of luminescence chip 19, so that from luminescence chip 19 to side S1 with a part for the light of S2 transmitting can be carried out wavelength conversion by luminescent coating 66 and by the first molding assembly 65 reflections.The thickness of luminescent coating 66 can be in the scope of 40 μ m to 70 μ m, but the embodiment of the present invention is not limited to this.

The first metal oxide materials 5 is added to the first molding assembly 65 so that the first molding assembly 65 is used as reflector, and the second metal oxide materials 7 is added to the second molded element 67 so that the second molding assembly 57 is used as diffusion layer.

The upper surface of the first molding assembly 65 is crooked and contacts with the second molding assembly 67.The peak of the upper surface of the first molding assembly 65 can be positioned at for example, position lower than the extended line of the upper surface of luminescence chip 19 (compound semiconductor layer).Like this, the light that farthest induced luminescence chip 19 side direction are sent, so that luminescent coating 66 can be carried out wavelength conversion.

Figure 11 to Figure 13 illustrates according to the view of the light-emitting device of eighth embodiment of the invention.

With reference to figures 11 to Figure 13, light-emitting device comprises main body 81, a plurality of lead frame 83 and 84, the first molding assembly 85, luminescent coating 86, the second molding assembly 87 and the luminescence chip 89 with chamber 81A.

The chamber 81A of main body 81 has such structure: the width D 3 of the 3rd medial surface 3A of the 3rd side 3 of adjoining main body 81 is different from the width D 2 of the 4th medial surface 4A of the 4th side 4 of adjoining main body 81.For example, the width D 2 of the 4th medial surface 4A is greater than the width D 3 of the 3rd medial surface 3A.The width at the upper surface place that herein, the 3rd medial surface 3A of main body 81 and the width D 2 of the 4th medial surface 4A and D3 equal main body 81 and can be Breadth Maximum.

Contiguous the first side 1 of main body 81, and comprise: the first medial surface 1A, it extends from the 3rd medial surface 3A; The 5th medial surface 1B, it is connected between the first medial surface 1A and the 3rd medial surface 3A; The second medial surface 2A, it adjoins the second side 2 of main body and extends from the first medial surface 1A; And the 6th medial surface 3B, it is connected between the second medial surface 2A and the 3rd medial surface 3A.The first medial surface 1A and the second medial surface 2A can be formed parallel to each other, and the extended line of the 5th medial surface 1B and the 6th medial surface 3B intersects.Interior angle between this extended line can be obtuse angle, and is for example that 90 degree are above but be less than the angle of 180 degree.Chamber 81A has the unsymmetric structure about X-X axle, and X-X axle penetrates the first medial surface 1A respect to one another and the second medial surface 2A center and luminescence chip 89.

The width of the 5th medial surface 1B and the 6th medial surface 3B narrows down towards the 4th medial surface 4A, to can reduce the optical direction angle between the first axle X-X and the second axle Y-Y, wherein, the first axle X-X penetrates region between the 4th medial surface 3A and luminescence chip 89 and the region between the 3rd medial surface 3A and luminescence chip 89, and the second axle Y-Y is perpendicular to the first axle X-X.

In addition, the protection chip 98 for the protection of luminescence chip 89 is disposed in main body 11 to can reduce light loss.

Protection chip 98 is disposed in the perimeter on the second lead frame 84 in main body 81, rather than the first extension side 1B, and is connected to the first lead frame 83 by the coupling assembling such as wire 99 or pattern.Luminescence chip 89 is disposed on the first lead frame 83 and by wire 93 and is connected to the second lead frame 84.

In addition, as shown in figure 13, the first molding assembly 85 is arranged around luminescence chip 89, and can be formed and be usingd as reflector by the silicon with the first metal oxide materials 5.The second molding assembly 87 can be used as diffusion layer and is formed at the first molding assembly 85 and has on the luminescence chip 89 of silicon of the second metal oxide materials 87.The upper surface R2 of the first molding assembly 85 is curved surfaces of depression, and contacts with the lower surface of the second molding assembly 87.This have been described in detail in the first embodiment.

The first molding assembly 85 is arranged around luminescence chip 89 as reflector.The direction that is distributed in the first axle X-X and the second axle Y-Y at the optical direction angle of the light sending from light-emitting device 80 is almost equal, and the direction angular difference between the first axle X-X and the direction of the second axle Y-Y is 2 degree or less.

Figure 15 and Figure 16 are the explanation embodiment of the present invention and the luminous flux of comparative example and the form of illumination.Herein, silicon materials A has the refraction coefficient in 1.52 to 1.54 scopes, and silicon materials B has the refraction coefficient in 1.40 to 1.42 scopes, and the first molding assembly is formed by silicon materials A, and the second molding assembly compares silicon A and silicon B.

As shown in Figure 15, situation 1 and situation 5 are pure molding situation, wherein SiO 2and TiO 2be not added in the silicon materials A and B of the first molding assembly and the second molding assembly; Situation 2 to situation 4 is TiO 2do not add the silicon materials A of the first molding assembly to and SiO 2with 7.5%, 10.0% and 12.5% situation of adding the silicon materials A of the second molding assembly to.Situation 6 to situation 8 is TiO 2do not add the silicon materials B of the first molding assembly to and SiO 2with 7.5%, 10.0% and 12.5% situation of adding the silicon materials B of the second molding assembly to.

In situation 9 and situation 16, TiO 2be added in the silicon materials A of the first molding assembly.In situation 9 and situation 13, SiO 2be not added in the silicon materials A of the second molding assembly.In situation 10 to situation 12, SiO 2with 7.5%, 10.0% and 12.5%, be added in the silicon materials A of the second molding assembly.In situation 14 to situation 16, SiO 2with 7.5%, 10.0% and 12.5%, be added in the silicon materials B of the first molding assembly.In situation 9 to situation 16, TiO 2with 10wt% or be still less added in the silicon materials A of the first molding assembly.

As in situation 1 to the situation 10 in situation 16 to situation 12, when identical silicon materials are added in the first molding assembly and the second molding assembly, TiO 2and SiO 2be added in the second molding assembly, luminous flux (lm) and illumination (Lux) are higher than not adding luminous flux (lm) and the illumination (Lux) in the situation of any metal oxide materials to the first molding assembly and the second molding assembly.In addition, situation 11 illustrates than more excellent in all other cases luminous flux (lm) and illumination (Lux) characteristic.Like this, by the first molding assembly and the second molding assembly, the luminous flux of light-emitting device (lm) and illumination (Lux) are improved, and wherein, the first molding assembly reflection is around the light of luminescence chip, and the second molding assembly transmits the light on luminescence chip.In addition, bonding strength between the first molding assembly and the second molding assembly is improved by forming the first molding assembly and second molding assembly of same material, to can solve the problem causing due to the interfacial separation between the first molding assembly and the second molding assembly.

In addition, in the situation 14 to 16 in situation 1 to 16, when different silicon materials are added to the first molding assembly and the second molding assembly mutually, TiO 2be added to the first molding assembly, and SiO 2be added to the second molding assembly, luminous flux and illumination are higher than not adding luminous flux and the illumination in the situation of any metal oxide materials to the first molding assembly and the second molding assembly.Like this, by the first molding assembly and the second molding assembly, the luminous flux of light-emitting device (lm) and illumination (Lux) are improved, and wherein, the first molding assembly reflection is around the light of luminescence chip 89, and the second molding assembly transmits the light on luminescence chip 89.

Referring to the distribution of the deflection in Figure 16, in situation 10 to 12, the deflection on the first axial X-X and the second axial Y-Y is almost equal to each other.Like this, when the silicon materials of the first molding assembly and the second molding assembly are identical and metal oxide materials differs from one another, although deflection distributes, reduced in one direction, can obtain almost identical deflection and distribute.

Figure 17 illustrates the distribution of the deflection of situation 10 to 12.As shown in Figure 17, XX-YY deflection differs 2 degree or still less each other.In the deflection curve chart of Figure 17, although the cavity region of the light-emitting device of Figure 11 has unsymmetric structure, because the difference between the asymmetric XX-YY deflection causing can be by adding the first metal oxide materials and reducing to adding the second metal oxide materials in the second molding assembly in the first molding assembly.

With reference to Figure 14, describe according to the luminescence chip of the embodiment of the present invention.

Figure 14 is the view illustrating according to the luminescence chip of the embodiment of the present invention.

Referring to Figure 14, luminescence chip comprises ray structure 310, the contact layer 321 forming ray structure 310 times, the reflection electrode layer 324 under contact layer 321, the supporting component 325 under reflection electrode layer 324, around protective layer 323 and first electrode 316 of reflection electrode layer 324 and ray structure 310.

Ray structure 310 comprises the first conductive semiconductor layer 313, active layer 314 and the second conductive semiconductor layer 315.

The first conductive semiconductor layer 313 is by being used the III-V compound semiconductor of the first conductive dopant doping to realize.The first conductive semiconductor layer 313 can be formed by N-shaped semiconductor layer and the first conductive dopant, N-shaped semiconductor layer comprises at least one in GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP, the first conductive dopant is N-shaped alloy, comprises Si, Ge, Sn, Se and Te.

The first conductive cladding can form between the first conductive semiconductor layer 315 and active layer 314.The first conductive cladding can comprise GaN base semiconductor.The band gap of the band gap specific activity layer 314 of the first conductive cladding is large.The first conductive cladding can form and limiting carrier with the first conduction type.

Active layer 314 is formed at the first conductive semiconductor layer 313 times.Active layer 314 can optionally comprise single quantum well structures, multiple quantum well (MQW) structure, quantum wire structure or quantum-dot structure.Active layer 314 can the rhythmic well layer of tool and barrier layer.Well layer can comprise component prescription InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1), and barrier layer can comprise component prescription InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1).For example, well/barrier layer can be by being used the laminated structure of InGaN/GaN, AlGaN/GaN, InGaN/AlGaN, InGaN/InGaN, InAlGaN/AlGaN or InAlGaN/InAlGaN to repeat with one or more cycle.The semi-conducting material that barrier layer can be wider than this semi-conducting material by band gap forms.

Active layer 314 is formed at the second semiconductor layer 315 times.The second semiconductor layer 315 can comprise the semiconductor that uses the second conductive dopant doping.For example, the second conductive semiconductor layer 315 can be formed by GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP.The second conductive semiconductor layer 315 is p-type semiconductor layers, and the second conductive dopant can be p-type alloy, for example Mg, Zn, Ca, Sr or Ba.

The second conductive semiconductor layer 315 can comprise superlattice structure.This superlattice structure can comprise the superlattice structure of InGaN/GaN or AlGaN/GaN.The superlattice structure diffusion package of the second conductive semiconductor layer 315 is contained in the electric current in abnormal voltage, so that can prolection layer 314.

In addition, can arrange on the contrary ray structure 310 conduction types.For example, the first conductive semiconductor layer 313 can be prepared as p-type semiconductor layer, and the second conductive semiconductor layer 315 can be prepared as N-shaped semiconductor layer.In addition, can also in the second conductive semiconductor layer 315, arrange the first conductive semiconductor layer of polarity and the second conductivity type opposite.

Ray structure 310 can have one of the following: n-p junction structure, p-n junction structure, n-p-n junction structure, p-n-p junction structure, wherein, p represents p-type semiconductor layer, and n represents N-shaped semiconductor layer, and "-" represents the structure that p-type semiconductor layer and N-shaped semiconductor layer contact with each other directly or indirectly.Hereinafter, object for convenience, toply will be described to the second semiconductor layer 315.

The first electrode 316 is disposed in the first conductive semiconductor layer 313.The upper surface of the first conductive semiconductor layer 313 can comprise rough structure, but the embodiment of the present invention is not limited to this.

The bottom of contact layer 321 and ray structure 310 for example the second conductive semiconductor layer 315 carries out ohmic contact.The material of contact layer 321 can selection from following: metal oxide materials, metal nitride, insulation or electric conducting material.For example, the material that the material of contact layer 321 can be selected in the group from consisting of following material forms: ITO(indium tin oxide), IZO(indium-zinc oxide), IZTO(indium zinc tin oxide), IAZO(indium aluminium zinc oxide), IGZO(indium gallium zinc oxide), IGTO(indium gallium tin-oxide), AZO(aluminium zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and selectivity combination thereof.In addition, the material of contact layer 321 can form with multilayer form.For example, the material of contact layer 321 can be with stacking such as the structure of IZO/Ni, AZO/Ag, IZO/Ag/Ni or AZO/Ag/Ni.Can also in contact layer 321, be formed for blocking-up corresponding to the layer of the electric current of the first electrode 316.

Protective layer 323 can optionally be formed by the metal oxide materials from following selection or insulating material: ITO(indium tin oxide), IZO(indium-zinc oxide), IZTO(indium zinc tin oxide), IAZO(indium aluminium zinc oxide), IGZO(indium gallium zinc oxide), IGTO(indium gallium tin-oxide), AZO(aluminium zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), SiO 2, SiO x, SiO xn y, Si 3n 4, Al 2o 3or TiO 2.Protective layer 323 can be by using sputter scheme or deposition approach form, and the layer that can prevent ray structure 310 such as the metal of reflection electrode layer 324 is by short circuit.

For example, reflection electrode layer 324 can be by forming from the material of selecting in the following group forming: Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf and Selection and Constitute thereof.Reflection electrode layer 324 can form to be greater than the size of the width of ray structure 310, and can improve light reflection efficiency.Can also arrange the metal level for combination between reflection electrode layer 324 and supporting component 325 and for the metal level of thermal diffusion, but the embodiment of the present invention is not limited to this.

Supporting component 325 can be pedestal, and can for example, by for example Cu, Au, Ni, Mo or Cu-W or carrier wafer (Si, Ge, GaAs, ZnO, SiC), be formed.Can also form the binder course between supporting component 325 and reflection electrode layer 324, and can allow two-layer bonded to each other.Above-mentioned disclosed luminescence chip is an example, and is not limited to above-mentioned disclosed characteristic.Luminescence chip can be optionally applied in the embodiment of light-emitting device, but the embodiment of the present invention is not limited to this.

Illuminator

According to the light-emitting device of the embodiment of the present invention, be applicable to illuminator.Illuminator comprises the structure of a plurality of light-emitting device forming arrays.Illuminator comprises headlight and the electronic console of the lighting apparatus shown in the display device shown in Figure 18 and Figure 19, Figure 20, illuminating lamp, photoflash lamp, signal lamp, vehicle.

Figure 18 illustrates the exploded perspective view having according to the display device of the light-emitting device of the embodiment of the present invention.

Referring to Figure 18, according to the display device 1000 of the embodiment of the present invention, comprise light guide plate 1041, to light guide plate 1041, provide the light source module 1031 of light, reflection subassembly 1022 under light guide plate 1041, optical sheet 1051 in light guide plate 1041, display floater 1061 on optical sheet 1051 and for holding the bottom 1011 of light guide sheet 1041, light source module 1031 and reflection subassembly 1022, but the embodiment of the present invention is not limited to this.

Bottom 1011, reflector plate 1022, light guide plate 1041 and optical sheet 1051 can be defined as light unit 1050.

The light that light guide plate 1041 diffusions are provided by light source module 1031, to provide surperficial light.Light guide plate 1041 can comprise transparent material.For example, light guide plate 1041 can comprise one of the following: based on acrylic acid resin (such as PMMA(polymethyl methacrylate)), PET(PETG), PC(Merlon), COC(cyclic olefine copolymer) and PEN(Polyethylene Naphthalate) resin.

Light source module 1031 is disposed at least one side of light guide plate 1041, with at least one side to light guide plate 1041, provides light.Light source module 1031 is as the light source of display unit.

At least one light source module 1031 is arranged to directly or indirectly from a side of light guide plate 1041, provides light.Light source module 1031 can comprise substrate 1033 and according to the light-emitting device of the embodiment of the present invention or light-emitting device 1035.This light-emitting device or light-emitting device 1035 are arranged on substrate 1033, separate each other with predetermined space.

Substrate 1033 can comprise the printed circuit board (PCB) (PCB) that comprises circuit pattern (not shown).In addition, substrate 1033 can also comprise metal core PCB(MCPCB) or flexible PCB (FPCB) and typical PCB, but the embodiment of the present invention is not limited to this.If light-emitting device 1035 is arranged on the side or fin of bottom 1011, can omit substrate 1033.Heating panel partly contacts with the upper surface of bottom 1011.

In addition, the light output surface and the light guide plate 1041 that light-emitting device 1035 are arranged as to the light that makes to discharge light-emitting device 1035 are spaced apart on substrate 1033 with preset distance, but the embodiment of the present invention is not limited to this.Light-emitting device 1035 can directly or indirectly provide light to light-entering surface, and this light-entering surface is a side of light guide plate 1041, but the embodiment of the present invention is not limited to this.

Reflection subassembly 1022 is disposed in light guide plate 1041 times.Reflection subassembly 1022 reflects the light of the transmission downwards of the lower surface by light guide plate 1041 to display floater 1061, thus the brightness that improves light unit 1050.For example, reflection subassembly 1022 can comprise PET, PC or polyvinyl chloride resin, but the embodiment of the present invention is not limited to this.Reflection subassembly 1022 can be used as the upper surface of bottom 1011, but the embodiment of the present invention is not limited to this.

Bottom 1011 can hold light guide plate 1041, light source module 1031 and reflection subassembly 1022 within it.For this reason, bottom 1011 has holding portion 1012, and holding portion 1012 has the box-shape that upper surface is opened, but the embodiment of the present invention is not limited to this.Bottom 1011 can couple with top cover (not shown), but the embodiment of the present invention is not limited to this.

Bottom 1011 can be used metal material or resin material to produce by punching course or extrusion process.In addition, bottom 1011 can comprise metal or the nonmetallic materials with superpower thermal conductivity, but the embodiment of the present invention is not limited to this.

Display floater 1061 is for example LCD panel, and it comprises the first transparency carrier respect to one another and the second transparency carrier and the liquid crystal layer arranging between first substrate and second substrate.Polarising sheet can be attached at least one surface of display floater 1061, but the embodiment of the present invention is not limited to this.Display floater 1061 is by allowing light to pass through and demonstration information from it.Display unit 1000 can be applied to the monitor of various portable terminals, notebook computer, the monitor of laptop computer and television set.

Optical sheet 1051 is disposed between display floater 1061 and light guide plate 1041, and comprises at least one transmission sheet.For example, optical sheet 1051 comprises at least one from selecting in the following group forming: diffusion sheet, level and vertical prismatic lens and brightness enhancement sheet.Diffusion sheet diffusion into the light emitted, level and vertically prismatic lens focus on incident light on display floater 1061, and the light that brightness enhancement sheet is lost by recycling improves brightness.In addition, screening glass can be disposed on display floater 1061, but the embodiment of the present invention is not limited to this.

Light guide plate 1041 and optical sheet 1051 can be used as in the light path that optical module is arranged in light source module 1031, but the embodiment of the present invention is not limited to this.

Figure 19 illustrates according to the sectional view of the display device of the embodiment of the present invention.

Referring to Figure 19, display unit 1100 comprises bottom 1152, is furnished with the substrate 1120 of light-emitting device 1124, optical module 1154 and display floater 1155 thereon.

Substrate 120 and light-emitting device 1124 can form light source module 1160.In addition, bottom 1152, at least one light source module 1160 and optical module 1154 can form light unit.Bottom 1151 can dispose holding portion 1153, but the embodiment of the present invention is not limited to this.A plurality of light-emitting devices or light-emitting device 1124 that light source module 1160 comprises substrate 1120 and arranges on substrate 1120.

Optical module 1154 can comprise at least one from selecting in the following group forming: lens, light guide plate, diffusion sheet, level and vertical prismatic lens and brightness enhancement sheet.Light guide plate can comprise PC or PMMA(polymethyl methacrylate).Can omit light guide plate.Diffusion sheet diffusion into the light emitted, level and vertically prismatic lens focus on incident light on viewing area, and the light that brightness enhancement sheet is lost by recycling improves brightness.

Optical element 1154 is disposed in light source module 1160 tops, to will convert surface light to from the light of light source module 1160 transmittings.

Figure 20 is the exploded perspective view illustrating according to the lighting device with light-emitting device of the embodiment of the present invention.

Referring to Figure 20, according to the lighting device of the embodiment of the present invention, can comprise cover 2100, light source module 2200, thermal radiation assembly 2400, power pack 2600, inner casing 2700 and sleeve 2800.In addition, according to the light-emitting device of the embodiment of the present invention, can also comprise at least one in assembly 2300 and fixture 2500.Light source module 2200 can comprise according to the light-emitting device of the embodiment of the present invention or light emitting device package.

For example, lid 2100 has shape or the hemisphere of bulb.Lid 2100 can have hollow-core construction, and a part for lid 2100 can be opened.Lid 2100 can be connected to light source module 2200 by optics, and can couple with thermal radiation assembly 2400.Lid 2100 can have the sunk part coupling with thermal radiation assembly 2400.

The inner surface of lid 2100 can be coated the milky pigment as diffusant.Light from the light of light source module 2200 transmittings, can pass through to use this milky material and scattering or diffusion, so that can be released to outside.

Lid 2100 can comprise glass, plastics, PP, PE or PC.In this case, the light resistance of PC exhibits excellent, outstanding thermal endurance and outstanding intensity.Lid 2100 can be transparent, to can externally recognize light source module 2200.In addition, lid 2100 can be opaque.Lid 2100 can form by blowing scheme.

Light source module 2200 can be disposed in a surface of thermal radiation assembly 2400.Correspondingly, the heat of sending from light source module 2200 is transmitted to thermal radiation assembly 2400.Light source module 2200 can comprise light-emitting device 2210, brace 2230 and connector 2250.

Assembly 2300 is disposed on the upper surface of thermal radiation assembly 2400, and has guide groove 2310, and a plurality of light-emitting devices 2210 and connector 2250 are inserted in guide groove 2310.Guide groove 2310 is corresponding with substrate and the connector 2250 of light-emitting device 2210.

On the surface of assembly 2300, can apply or apply white pigments.Assembly 2300 is to the light of the internal surface reflection light echo source module 2200 of lid 2100 reflection tegmentums 2100.Correspondingly, can improve according to the light utilization efficiency of the lighting apparatus of the embodiment of the present invention.

Assembly 2300 can comprise insulating material.The brace 2230 of light source module 2200 can comprise electric conducting material.Correspondingly, thermal radiation assembly 2400 can be electrically connected to brace 2230.Assembly 2300 comprises that insulating material prevents the electrical short between brace 2230 and thermal radiation assembly 2400.Thermal radiation assembly 2400 receives from the heat of light source module 2200 and from the heat of power pack 2600, and radiant heat.

Fixture 2500 blocks the holding tank 2719 at the insulated part 2710 of inner casing 2700 interior layouts.Correspondingly, the power pack 2600 holding in the insulated part 2710 of inner casing 2700 is sealed.Fixture 2500 has guide projections part 2510.Guide projections part 2510 can comprise the hole that allows the jut 2610 of power pack 2600 to pass.

The signal of telecommunication receiving from outside is processed and changed to power pack 2600, and this signal of telecommunication is offered to light source module 2200.Power pack 2600 is accommodated in the holding tank 2719 of inner casing 2700, and the device 2500 that is fixed is enclosed in inner casing 2700.

Power pack 2600 can comprise jut 2610, leader 2630, base portion 2650 and extension 2670.

Leader 2630 is outstanding from a side direction of base portion 2650.Leader 2630 can insert in fixture 2500.On a surface of base portion 2650, can arrange a plurality of parts.For example, these parts comprise the driving chip of DC transducer, driving light source module 220, the ESD(static discharge of protection light source module 2200) protective device, but the embodiment of the present invention is not limited to this.

Extension 2670 is outwards outstanding from the opposite side of base portion 2650.The coupling part 2750 that inner casing 2700 is inserted in extension 2670, and receive from the outside signal of telecommunication.For example, extension 2670 can be equal to or less than the width of the coupling part 2750 of inner casing 2700.Extension 2670 can be electrically connected to sleeve 2800 by wire.

Molding portion and power pack 2600 can together be arranged in inner casing 2700.Molding portion forms by hardened forming liquid, so that power pack 2600 can be fixed into inner casing 2700.

The embodiment of the present invention can be improved the reliability of the light-emitting device with a plurality of molded structures.Although the chamber of light-emitting device is asymmetrical, can reduce poor between the light direction angle of mutually different axles.Can improve according to the light-emitting device of the embodiment of the present invention and the illuminator with this light-emitting device.

To the meaning of any one use of " embodiment ", " embodiment ", " example embodiment " etc., be in this manual: specific feature, structure or the characteristic in conjunction with this embodiment, described comprise at least one embodiment of the present invention.Each local such phrase occurring in specification might not refer to same embodiment entirely.In addition, when describing specific feature, structure or characteristic in conjunction with arbitrary embodiment, will be understood that, it is applied in the scope of these features, structure or characteristic in conjunction with other embodiment those skilled in the art.

Although the embodiment of the present invention is described with reference to many illustrative embodiment, should be appreciated that those skilled in the art can make many other modifications and enforcement, and these modifications and implementing within falling into the scope and spirit of principle of present disclosure.More specifically, it is possible in the scope of specification, accompanying drawing and appended claims, the setting of components and/or subject combination setting being carried out to various changes and modifications.Except the distortion at components and/or aspect arranging and modification, interchangeable application is also apparent for a person skilled in the art.

Claims (20)

1. a light-emitting device, comprising:
Main body, it has chamber;
A plurality of lead frames, it is positioned at described chamber;
Luminescence chip, it is positioned at described at least one on lead frame;
The first molding assembly, it is around described luminescence chip, and wherein the first metal oxide materials is added to described the first molding assembly; And
The second molding assembly, it is positioned on described the first molding assembly and described luminescence chip, and wherein the second metal oxide materials is added to described the second molding assembly;
Wherein, described luminescence chip comprises:
Ray structure, it comprises a plurality of compound semiconductor layers; With
Reflection electrode layer, it is positioned under described ray structure;
Wherein, the upper surface of described the first molding assembly extends from the region between the upper surface of described luminescence chip and the side of described reflection electrode layer with predetermined curvature; And,
Wherein, the lower surface of the described upper surface corresponding to described the first molding assembly of described the second molding assembly comprises the curved surface protruding to described the first molding assembly.
2. light-emitting device as claimed in claim 1, wherein, the described upper surface of described the first molding assembly is disposed between described luminescence chip and the medial surface in described chamber.
3. light-emitting device as claimed in claim 1 or 2, wherein, the described upper surface of described the first molding assembly extends from the described upper surface of described luminescence chip.
4. light-emitting device as claimed in claim 1 or 2, wherein, the described upper surface of described the first molding assembly extends to the medial surface in described chamber.
5. light-emitting device as claimed in claim 4, wherein, the height of the medial surface contacting with described upper surface described the first molding assembly described chamber equals the height of the described upper surface of described luminescence chip.
6. light-emitting device as claimed in claim 1 or 2, wherein, the described upper surface of described the first molding assembly is the curved surface to the lower surface depression of described the first molding assembly, and the horizontal line extending with respect to the described upper surface from described luminescence chip, the degree of depth of this curved surface is in 30% to 70% scope of the thickness of described luminescence chip.
7. light-emitting device as claimed in claim 1 or 2, wherein, the described upper surface of described the first molding assembly has the curvature in 0.05mm to 1mm scope.
8. light-emitting device as claimed in claim 7, wherein, the lower surface of the described upper surface corresponding to described the first molding assembly of described the second molding assembly has the curvature equating with the curvature of the described upper surface of described the first molding assembly.
9. light-emitting device as claimed in claim 7, wherein, the curvature of the upper surface of described the second molding assembly is greater than the curvature of the described upper surface of described the first molding assembly.
10. light-emitting device as claimed in claim 1 or 2, wherein, the refraction coefficient of described the first metal oxide materials is different from the refraction coefficient of described the second metal oxide materials, and the amount of adding described the first metal oxide materials in described the first molding assembly and described the second molding assembly and described the second metal oxide materials to is in the scope of 5wt% to 15wt%.
11. light-emitting devices as claimed in claim 10, are also included in the fluorophor in described the second molding assembly.
12. light-emitting devices as claimed in claim 10, wherein, described the first metal oxide materials comprises TiO 2, described the second metal oxide materials comprises SiO 2.
13. light-emitting devices as claimed in claim 1 or 2, wherein, described the first metal oxide materials has the material different from described the second metal oxide materials, and described the first molding assembly has the material identical with described the second molding assembly.
14. light-emitting devices as claimed in claim 1 or 2, wherein, described the first molding assembly consists of the silicon materials identical with described the second molding assembly.
15. light-emitting devices as claimed in claim 1 or 2, wherein, described main body comprises epoxide resin material or silicon materials.
16. light-emitting devices as claimed in claim 15, wherein, described main body consists of the material identical with described the second molding assembly with described the first molding assembly.
17. light-emitting devices as claimed in claim 1 or 2, are also included in the luminescent coating between described luminescence chip and described the second molding assembly.
18. light-emitting devices as claimed in claim 17, wherein, a part for described luminescent coating is disposed between described the first molding assembly and described the second molding assembly.
19. light-emitting devices as claimed in claim 1 or 2, wherein, the thickness of described the second molding assembly is greater than the maximum ga(u)ge of described the first molding assembly.
20. light-emitting devices as claimed in claim 1 or 2, wherein, the interval between the described upper surface of described luminescence chip and the upper surface of described the second molding assembly is in the scope of 1 to 3 times of the thickness of described luminescence chip.
CN201310110435.7A 2012-09-13 2013-04-01 Light-emitting device CN103682036B (en)

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US20140071689A1 (en) 2014-03-13
JP6283483B2 (en) 2018-02-21
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JP2014057061A (en) 2014-03-27
KR101997243B1 (en) 2019-07-08

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