CN201635286U - 搪瓷太阳能建筑墙板 - Google Patents

搪瓷太阳能建筑墙板 Download PDF

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CN201635286U
CN201635286U CN2009202655248U CN200920265524U CN201635286U CN 201635286 U CN201635286 U CN 201635286U CN 2009202655248 U CN2009202655248 U CN 2009202655248U CN 200920265524 U CN200920265524 U CN 200920265524U CN 201635286 U CN201635286 U CN 201635286U
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enamel
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谢跃武
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SIHUI WEILI CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/26—Building materials integrated with PV modules, e.g. façade elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

一种搪瓷太阳能建筑墙板，本实用新型的结构由自上至下由减反射层1、上电极层2、透明导电层3、缓冲层4、吸收层5、底电极层6、基板7，粘胶层8和保温隔离层9构成。所述的缓冲层为n型CdS薄膜层，所述的吸收层为p型CIGS薄膜层，所述的基板为搪瓷板，本实用新型利用搪瓷板面作为太阳能电池的载体，具有钢板的强度，玻璃的化学稳定性，产品容易加工制造，成本低，方便安装，特别是产品整体可以直接按搪瓷面板的安装方式固定在建筑物的外墙面，既能接收太阳光发电，又具有很好的装饰效果，使太阳能发电技术在高大建筑物的外墙上应用成为现实，大大地扩大了太阳能发电的应用领域。

Description

搪瓷太阳能建筑墙板
技术领域
本实用新型涉及太阳能电池技术，特别是涉及一种可作为建筑外墙装饰板的太阳能电池。
背景技术
太阳能电池是一种将光能转化成电能的装置，目前比较成熟的工艺是将硅薄膜太阳能电池沉积在玻璃或陶瓷基片上，由于玻璃或陶瓷基体容易破碎，还存在对耐高温应变能力差的缺点，在玻璃或陶瓷基体上沉积制备硅薄膜难度大，成本高。同时这些以玻璃或陶瓷为基体的太阳能电池难以直接安装在墙面，影响其在建筑物外墙上的推广应用。
发明内容
本实用新型的目的是提出一种将太阳能电池技术与建筑装饰面板相结合，容易加工制造和安装应用的搪瓷太阳能建筑墙板。
实现上述目的的技术方案如下：所提出的搪瓷太阳能建筑墙板，包括减反射层、上电极层、透明导电层、底电极层和基板，减反射层是最上层，之下是上电极层和透明导电层，基底的上面是底电极层，其特征在于在透明导电层和底电极层之间具有缓冲层和吸收层，所述的缓冲层为n型CdS薄膜层，所述的吸收层为p型CIGS薄膜层，所述的基板为搪瓷板，该基板的下面通过粘胶层连接一层保温隔离层。
本实用新型的制造方法是，在搪瓷基板的上面，由下而上依次沉积底电极层、吸收层(p型CIGS薄膜层)、缓冲层(n型CdS薄膜层)、透明导电层、上电极层、减反射层，形成薄膜太阳能电池，再在搪瓷基板的底面通过粘胶层粘附一层保温隔离层即形成本实用新型产品。
所述的搪瓷板可为钢板搪瓷或铝搪瓷，其厚度以1.5～2.5mm为宜。
本实用新型进一步的技术方案是在所述的基板的底面四周设置安装连接件，使本搪瓷太阳能建筑墙板可以很方便地安装固定在建筑物的外墙上。
本实用新型所提供的搪瓷太阳能建筑墙板利用搪瓷板面作为太阳能电池的载体，具有钢板的强度，玻璃的化学稳定性，产品容易加工制造，成本低，方便安装，特别是产品整体可以直接按搪瓷面板的安装方式固定在建筑物的外墙面，既能接收太阳光发电，又具有很好的装饰效果，使太阳能发电技术在高大建筑物的外墙上应用成为现实，大大地扩大了太阳能发电的应用领域。
附图说明
图1是本实用新型的结构示意图；
图2是本实用新型的整体外观视图；
图3是图2的A-A向剖视图。
具体实施方式
以下结合附图对本实用新型的结构细节做进一步的详细说明。
实施例一
如图一所示，本搪瓷太阳能建筑墙板自上至下由减反射层1、上电极层2、透明导电层3、缓冲层4、吸收层5、底电极层6、基板7，粘胶层8和保温隔离层9构成。减反射层1为MgF2材料层，上电极层2为Ni/Al材料层，透明导电层3为Zn及Al材料层，缓冲层4为n型CdS薄膜层，吸收层5为p型CIGS薄膜层，底电极层6为Cu-Mo材料层，基板7为钢板搪瓷外墙板，由底釉层、面釉层和钢板基体构成，保温隔离层9通过粘胶层8粘附在基板7的底面。本搪瓷太阳能建筑墙板的整体外形如图2、图3所示，搪瓷太阳能建筑墙板呈矩形，其钢板搪瓷基板的厚度为1.5mm，在上面(面釉层上)由下而上依次沉积底电极层、吸收层(p型CIGS薄膜层)、缓冲层(n型CdS薄膜层)、透明导电层、上电极层、减反射层，形成薄膜太阳能电池T，在基板7的底面(即钢板搪瓷外墙板的底釉层面上)通过粘胶层粘附一层保温隔离层9，在该基板的底面四周设有8块安装连接件10，每块安装连接件上具有安装孔11，方便本搪瓷太阳能建筑墙板在建筑物外墙的安装使用。
实施例二
本搪瓷太阳能建筑墙板实施例采用2.5mm厚度的铝搪瓷作为基板7，所述的铝搪瓷由底釉层、铝板基体和面釉层构成，在其面釉层上由下而上依次沉积底电极层6、吸收层5(p型CIGS薄膜层)、缓冲层4(n型CdS薄膜层)、透明导电层3、上电极层2、减反射层1，形成薄膜太阳能电池，在所述的基板7的底面通过粘胶层8粘附一层保温隔离层9，其基本结构和制造方法与实施例一基本相同。

Claims (4)

1.一种搪瓷太阳能建筑墙板，包括减反射层(1)、上电极层(2)、透明导电层(3)、底电极层(6)和基板(7)，减反射层(1)是最上层，之下是上电极层(2)和透明导电层(3)，基底(7)的上面是底电极层(6)，其特征在于在透明导电层(3)和底电极层(6)之间具有缓冲层(4)和吸收层(5)，所述的缓冲层(4)为n型CdS薄膜层，所述的吸收层(5)为p型CIGS薄膜层，所述的基板(7)为搪瓷板，该基板(7)的下面通过粘胶层(8)连接一层保温隔离层(9)。
2.根据权利要求1所述的搪瓷太阳能建筑墙板，其特征在于所述的搪瓷板为钢板搪瓷或铝搪瓷。
3.根据权利要求1或2所述的搪瓷太阳能建筑墙板，其特征在于所述的搪瓷板的厚度为1.5～2.5mm。
4.根据权利要求1所述的搪瓷太阳能建筑墙板，其特征在于所述的基板(7)的底面四周设有安装连接件(10)。
CN2009202655248U 2009-12-24 2009-12-24 搪瓷太阳能建筑墙板 Expired - Lifetime CN201635286U (zh)

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CN102191830A (zh) * 2011-05-06 2011-09-21 杭州新峰恒富科技有限公司 光伏建筑一体化模块式太阳能发电墙板
CN109103270A (zh) * 2018-09-29 2018-12-28 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池及薄膜太阳能电池的制备方法
CN110416352A (zh) * 2018-04-28 2019-11-05 北京铂阳顶荣光伏科技有限公司 一种搪瓷钢基底薄膜太阳能电池的制备方法
CN110429150A (zh) * 2018-04-28 2019-11-08 北京铂阳顶荣光伏科技有限公司 一种搪瓷钢基薄膜太阳能电池
CN114319758A (zh) * 2021-12-01 2022-04-12 安徽中晖照明科技有限责任公司 一种太阳能led外墙板材

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CN110416352A (zh) * 2018-04-28 2019-11-05 北京铂阳顶荣光伏科技有限公司 一种搪瓷钢基底薄膜太阳能电池的制备方法
CN110429150A (zh) * 2018-04-28 2019-11-08 北京铂阳顶荣光伏科技有限公司 一种搪瓷钢基薄膜太阳能电池
CN109103270A (zh) * 2018-09-29 2018-12-28 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池及薄膜太阳能电池的制备方法
CN114319758A (zh) * 2021-12-01 2022-04-12 安徽中晖照明科技有限责任公司 一种太阳能led外墙板材

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