CN1987674A - 用大氧化孔径垂直腔面发射激光器件的光学数据处理装置 - Google Patents

用大氧化孔径垂直腔面发射激光器件的光学数据处理装置 Download PDF

Info

Publication number
CN1987674A
CN1987674A CNA2006101422025A CN200610142202A CN1987674A CN 1987674 A CN1987674 A CN 1987674A CN A2006101422025 A CNA2006101422025 A CN A2006101422025A CN 200610142202 A CN200610142202 A CN 200610142202A CN 1987674 A CN1987674 A CN 1987674A
Authority
CN
China
Prior art keywords
optical data
data processing
vcsel
light
emitting laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101422025A
Other languages
English (en)
Chinese (zh)
Inventor
植木伸明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Publication of CN1987674A publication Critical patent/CN1987674A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
CNA2006101422025A 2005-12-22 2006-10-09 用大氧化孔径垂直腔面发射激光器件的光学数据处理装置 Pending CN1987674A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005369086 2005-12-22
JP2005369086A JP2007173514A (ja) 2005-12-22 2005-12-22 大口径表面発光型半導体レーザ素子を用いた光情報処理装置

Publications (1)

Publication Number Publication Date
CN1987674A true CN1987674A (zh) 2007-06-27

Family

ID=37836990

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101422025A Pending CN1987674A (zh) 2005-12-22 2006-10-09 用大氧化孔径垂直腔面发射激光器件的光学数据处理装置

Country Status (5)

Country Link
US (1) US20070147459A1 (enExample)
EP (1) EP1801940A1 (enExample)
JP (1) JP2007173514A (enExample)
KR (1) KR100866059B1 (enExample)
CN (1) CN1987674A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101640375B (zh) * 2008-07-31 2011-05-18 佳能株式会社 制造面发射激光器及其阵列的方法和光学设备
CN115631773A (zh) * 2020-06-22 2023-01-20 西部数据技术公司 用于hamr的vcsel阵列

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4548345B2 (ja) * 2006-01-12 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
KR101145219B1 (ko) 2007-09-17 2012-05-25 삼성전자주식회사 광출력장치 및 이를 채용한 광주사유니트
US7839913B2 (en) * 2007-11-22 2010-11-23 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
JP2010192650A (ja) * 2009-02-18 2010-09-02 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および光情報処理装置
JP5403248B2 (ja) * 2009-09-15 2014-01-29 株式会社リコー 光源装置、光走査装置及び画像形成装置
US8139277B2 (en) * 2010-01-20 2012-03-20 Palo Alto Research Center. Incorporated Multiple-source multiple-beam polarized laser scanning system
JP5717989B2 (ja) * 2010-06-15 2015-05-13 古河電気工業株式会社 レーザ装置
US9041015B2 (en) 2013-03-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and methods of forming same
US8976833B2 (en) 2013-03-12 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Light coupling device and methods of forming same
US10796627B2 (en) * 2018-07-27 2020-10-06 Shaoher Pan Integrated laser arrays based devices
US11888289B2 (en) * 2020-03-30 2024-01-30 Namuga, Co., Ltd. Light source module allowing differential control according to distance to subject and method for controlling the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1295580C (en) * 1989-06-14 1992-02-11 Bernard Bergeron Apparatus for handling cargo
US5483511A (en) * 1993-02-17 1996-01-09 Vixel Corporation Multiple beam optical memory system with solid-state lasers
JP3192552B2 (ja) * 1994-05-23 2001-07-30 松下電器産業株式会社 走査光学系およびそれを用いた画像形成装置
US5727014A (en) * 1995-10-31 1998-03-10 Hewlett-Packard Company Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
JP3287319B2 (ja) * 1998-10-16 2002-06-04 富士ゼロックス株式会社 光学走査装置、走査レンズ、及び画像形成装置
JP2002026445A (ja) * 2000-07-11 2002-01-25 Ricoh Co Ltd 光源装置
TW529211B (en) * 2001-03-07 2003-04-21 Ying-Jay Yang Device structure and method for fabricating semiconductor lasers
JP4621393B2 (ja) * 2001-03-27 2011-01-26 富士ゼロックス株式会社 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法
JP2002289967A (ja) 2001-03-28 2002-10-04 Rohm Co Ltd 面発光型半導体レーザおよびその製法
JP2002353562A (ja) * 2001-05-23 2002-12-06 Canon Inc 面発光レーザ装置およびその製造方法
JP4537658B2 (ja) * 2002-02-22 2010-09-01 株式会社リコー 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP4363016B2 (ja) * 2002-04-26 2009-11-11 富士ゼロックス株式会社 半導体レーザー装置の取付構造
KR100484490B1 (ko) * 2002-11-11 2005-04-20 한국전자통신연구원 장파장 수직 공진 표면방출 레이저 및 그 제작방법
US7061945B2 (en) * 2003-05-13 2006-06-13 Finisar Corporation VCSEL mode-transforming phase filter with enhanced performance
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
US20050169336A1 (en) * 2004-02-04 2005-08-04 Fuji Xerox Co., Ltd. Vertical-cavity surface-emitting semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101640375B (zh) * 2008-07-31 2011-05-18 佳能株式会社 制造面发射激光器及其阵列的方法和光学设备
CN115631773A (zh) * 2020-06-22 2023-01-20 西部数据技术公司 用于hamr的vcsel阵列

Also Published As

Publication number Publication date
US20070147459A1 (en) 2007-06-28
KR20070066864A (ko) 2007-06-27
EP1801940A1 (en) 2007-06-27
KR100866059B1 (ko) 2008-10-31
JP2007173514A (ja) 2007-07-05

Similar Documents

Publication Publication Date Title
US10578819B2 (en) Surface light emitting semiconductor laser element
KR101121114B1 (ko) 면 발광형 반도체 레이저, 면 발광형 반도체 레이저의 제조방법, 모듈, 광원 장치, 정보 처리 장치, 광 송신 장치,광 공간 전송 장치 및 광 공간 전송 시스템
US8465993B2 (en) Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, optical transmission device, and information processing apparatus
CN101136538B (zh) Vcsel、其制造方法、模块、光发送装置、光空间传输装置、光发送系统以及光空间传输系统
US8059689B2 (en) Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, optical transmission device, and information processing apparatus
JP5593700B2 (ja) 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP5320991B2 (ja) 面発光レーザ、面発光レーザアレイ、光走査装置、画像形成装置、光伝送モジュール及び光伝送システム
JPH09172218A (ja) 一定の偏光方向を有する垂直共振型面発光レーザー
JP5092533B2 (ja) 面発光型半導体レーザ、光学装置、光照射装置、情報処理装置、光送信装置、光空間伝送装置および光伝送システム
JP5954469B1 (ja) 面発光型半導体レーザ、面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US20050169336A1 (en) Vertical-cavity surface-emitting semiconductor laser
KR100866059B1 (ko) 대구경 표면 발광형 반도체 레이저 소자를 이용한 광정보처리 장치
JP5978669B2 (ja) 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2009238815A (ja) 面発光型半導体レーザおよびその製造方法
JP2011155143A (ja) 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP5282673B2 (ja) 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2016213486A (ja) 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2009193979A (ja) 面発光型半導体レーザ、光学装置、光照射装置、情報処理装置、光送信装置、光空間伝送装置および光伝送システム
JP5435008B2 (ja) 面発光型半導体レーザ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication