JP2007173514A - 大口径表面発光型半導体レーザ素子を用いた光情報処理装置 - Google Patents

大口径表面発光型半導体レーザ素子を用いた光情報処理装置 Download PDF

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Publication number
JP2007173514A
JP2007173514A JP2005369086A JP2005369086A JP2007173514A JP 2007173514 A JP2007173514 A JP 2007173514A JP 2005369086 A JP2005369086 A JP 2005369086A JP 2005369086 A JP2005369086 A JP 2005369086A JP 2007173514 A JP2007173514 A JP 2007173514A
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Japan
Prior art keywords
optical information
information processing
vcsel
processing apparatus
semiconductor laser
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Pending
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JP2005369086A
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English (en)
Japanese (ja)
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JP2007173514A5 (enExample
Inventor
Nobuaki Ueki
伸明 植木
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Fujifilm Business Innovation Corp
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Fuji Xerox Co Ltd
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Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP2005369086A priority Critical patent/JP2007173514A/ja
Priority to US11/506,296 priority patent/US20070147459A1/en
Priority to EP06254523A priority patent/EP1801940A1/en
Priority to CNA2006101422025A priority patent/CN1987674A/zh
Priority to KR1020060117740A priority patent/KR100866059B1/ko
Publication of JP2007173514A publication Critical patent/JP2007173514A/ja
Publication of JP2007173514A5 publication Critical patent/JP2007173514A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2005369086A 2005-12-22 2005-12-22 大口径表面発光型半導体レーザ素子を用いた光情報処理装置 Pending JP2007173514A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005369086A JP2007173514A (ja) 2005-12-22 2005-12-22 大口径表面発光型半導体レーザ素子を用いた光情報処理装置
US11/506,296 US20070147459A1 (en) 2005-12-22 2006-08-18 Optical data processing apparatus using vertical-cavity surface-emitting laser (VCSEL) device with large oxide-aperture
EP06254523A EP1801940A1 (en) 2005-12-22 2006-08-30 Optical data processing apparatus using vertical-cavity surface-emitting laser (VCSEL) device with large oxide-aperture
CNA2006101422025A CN1987674A (zh) 2005-12-22 2006-10-09 用大氧化孔径垂直腔面发射激光器件的光学数据处理装置
KR1020060117740A KR100866059B1 (ko) 2005-12-22 2006-11-27 대구경 표면 발광형 반도체 레이저 소자를 이용한 광정보처리 장치

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JP2005369086A JP2007173514A (ja) 2005-12-22 2005-12-22 大口径表面発光型半導体レーザ素子を用いた光情報処理装置

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JP2007173514A true JP2007173514A (ja) 2007-07-05
JP2007173514A5 JP2007173514A5 (enExample) 2009-02-12

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JP2005369086A Pending JP2007173514A (ja) 2005-12-22 2005-12-22 大口径表面発光型半導体レーザ素子を用いた光情報処理装置

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US (1) US20070147459A1 (enExample)
EP (1) EP1801940A1 (enExample)
JP (1) JP2007173514A (enExample)
KR (1) KR100866059B1 (enExample)
CN (1) CN1987674A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066031A (ja) * 2009-09-15 2011-03-31 Ricoh Co Ltd 光源装置、光走査装置及び画像形成装置
JP2012004227A (ja) * 2010-06-15 2012-01-05 Furukawa Electric Co Ltd:The レーザ装置

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
JP4548345B2 (ja) * 2006-01-12 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
KR101145219B1 (ko) 2007-09-17 2012-05-25 삼성전자주식회사 광출력장치 및 이를 채용한 광주사유니트
US7839913B2 (en) * 2007-11-22 2010-11-23 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
JP5106487B2 (ja) * 2008-07-31 2012-12-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器
JP2010192650A (ja) * 2009-02-18 2010-09-02 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および光情報処理装置
US8139277B2 (en) 2010-01-20 2012-03-20 Palo Alto Research Center. Incorporated Multiple-source multiple-beam polarized laser scanning system
US9041015B2 (en) 2013-03-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and methods of forming same
US8976833B2 (en) 2013-03-12 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Light coupling device and methods of forming same
US10796627B2 (en) * 2018-07-27 2020-10-06 Shaoher Pan Integrated laser arrays based devices
US11843221B2 (en) * 2020-03-30 2023-12-12 Namuga, Co., Ltd. Light source module for emitting high density beam and method for controlling the same
US11302352B2 (en) * 2020-06-22 2022-04-12 Western Digital Technologies, Inc. VCSEL array for HAMR

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JP2002026445A (ja) * 2000-07-11 2002-01-25 Ricoh Co Ltd 光源装置
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JP2004006592A (ja) * 2002-04-26 2004-01-08 Fuji Xerox Co Ltd 半導体レーザー装置及びその取付構造、並びに光源装置の取付構造
JP2004253408A (ja) * 2002-02-22 2004-09-09 Ricoh Co Ltd 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法

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JP2002026445A (ja) * 2000-07-11 2002-01-25 Ricoh Co Ltd 光源装置
JP2002359432A (ja) * 2001-03-27 2002-12-13 Fuji Xerox Co Ltd 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法
JP2002353562A (ja) * 2001-05-23 2002-12-06 Canon Inc 面発光レーザ装置およびその製造方法
JP2004253408A (ja) * 2002-02-22 2004-09-09 Ricoh Co Ltd 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP2004006592A (ja) * 2002-04-26 2004-01-08 Fuji Xerox Co Ltd 半導体レーザー装置及びその取付構造、並びに光源装置の取付構造
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066031A (ja) * 2009-09-15 2011-03-31 Ricoh Co Ltd 光源装置、光走査装置及び画像形成装置
JP2012004227A (ja) * 2010-06-15 2012-01-05 Furukawa Electric Co Ltd:The レーザ装置

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CN1987674A (zh) 2007-06-27
EP1801940A1 (en) 2007-06-27
KR100866059B1 (ko) 2008-10-31
KR20070066864A (ko) 2007-06-27
US20070147459A1 (en) 2007-06-28

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