CN1970623A - 液状环氧树脂组成物 - Google Patents
液状环氧树脂组成物 Download PDFInfo
- Publication number
- CN1970623A CN1970623A CNA200610140301XA CN200610140301A CN1970623A CN 1970623 A CN1970623 A CN 1970623A CN A200610140301X A CNA200610140301X A CN A200610140301XA CN 200610140301 A CN200610140301 A CN 200610140301A CN 1970623 A CN1970623 A CN 1970623A
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- China
- Prior art keywords
- epoxy resin
- liquid epoxy
- resin composition
- epoxy
- sulfur
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 239000004850 liquid epoxy resins (LERs) Substances 0.000 title claims abstract description 35
- -1 phenol compound Chemical class 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 150000001412 amines Chemical class 0.000 claims abstract description 22
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 17
- 239000011593 sulfur Substances 0.000 claims abstract description 17
- 239000011256 inorganic filler Substances 0.000 claims abstract description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 11
- 239000004593 Epoxy Substances 0.000 claims description 51
- 229920005989 resin Polymers 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 51
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 34
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- 150000004982 aromatic amines Chemical group 0.000 claims description 12
- 239000000470 constituent Substances 0.000 claims description 12
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 10
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
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- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
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- VOORKBJLBDXKGM-UHFFFAOYSA-N (2,3-diethylphenyl)-phenylmethanediamine Chemical compound CCC1=CC=CC(C(N)(N)C=2C=CC=CC=2)=C1CC VOORKBJLBDXKGM-UHFFFAOYSA-N 0.000 description 2
- FEXBEKLLSUWSIM-UHFFFAOYSA-N 2-Butyl-4-methylphenol Chemical group CCCCC1=CC(C)=CC=C1O FEXBEKLLSUWSIM-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
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- 125000005843 halogen group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
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- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- QSRJVOOOWGXUDY-UHFFFAOYSA-N 2-[2-[2-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propanoyloxy]ethoxy]ethoxy]ethyl 3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C)=CC(CCC(=O)OCCOCCOCCOC(=O)CCC=2C=C(C(O)=C(C)C=2)C(C)(C)C)=C1 QSRJVOOOWGXUDY-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical class [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- GAODDBNJCKQQDY-UHFFFAOYSA-N 2-methyl-4,6-bis(octylsulfanylmethyl)phenol Chemical compound CCCCCCCCSCC1=CC(C)=C(O)C(CSCCCCCCCC)=C1 GAODDBNJCKQQDY-UHFFFAOYSA-N 0.000 description 1
- MQWCQFCZUNBTCM-UHFFFAOYSA-N 2-tert-butyl-6-(3-tert-butyl-2-hydroxy-5-methylphenyl)sulfanyl-4-methylphenol Chemical compound CC(C)(C)C1=CC(C)=CC(SC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O MQWCQFCZUNBTCM-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- ZVVFVKJZNVSANF-UHFFFAOYSA-N 6-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]hexyl 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCCCCCCOC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 ZVVFVKJZNVSANF-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
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- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
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- 125000001246 bromo group Chemical class Br* 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5033—Amines aromatic
-
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Abstract
本发明提供一种胺系硬化剂的环氧树脂组成物,其保存性、焊料连接性优异且适用于倒装芯片型半导体装置的无流动制法。液状环氧树脂组成物,其特征在于包含:(A)液状环氧树脂;(B)胺系硬化剂;(C)含硫的苯酚化合物,相对于(A)成分及(B)成分的总量100重量份,含硫的苯酚化合物为1~20重量份;以及(D)无机填充剂,相对于(A)成分的环氧树脂100重量份,无机填充剂为50~900重量份。
Description
技术领域
本发明关于一种可靠性及操作性优异且可使半导体装置的制造步骤简化的半导体密封用液状环氧树脂组成物、以及一种用该环氧树脂组成物进行密封的半导体装置。
背景技术
近年来,随着半导体封装(package)的小型化、薄型化及轻量化,半导体芯片的高密度化较为显着,高密度半导体芯片的代表性封装法为,广泛进行倒装芯片(flip chip)封装。倒装芯片封装的代表性方法,可列举将半导体芯片的焊料电极与封装基板电路上的焊料凸点(solder bump)或焊盘(solder land)直接进行焊料接合的C4(Controlled Collapsed Chip Connect)工艺。其是接合后,为了保护连接部,而用环氧树脂密封半导体芯片与封装基板的缝隙者。
在利用C4工艺的倒装芯片封装中,先前利用毛细流动(capillary flow)法来进行树脂密封,但因为1)利用助焊剂(flux)进行焊料润湿性改善处理、2)焊料连接、3)助焊剂清洗、4)利用液状密封树脂的毛细管现象进行注入、5)树脂硬化等步骤较多,且树脂的注入也很费时间,所以存在生产性低的问题。并且,随着焊料电极的微细化、精细间距(fine-pitch)化,助焊剂的清洗除去性恶化,存在助焊剂残渣造成的密封树脂润湿性不良,或助焊剂残渣中的离子(ion)性杂质造成的半导体封装可靠性降低的问题,涉及助焊剂的技术性课题较多。
作为这些问题的对策,提出有如下无流动(noflow)法:直接在封装基板上涂布添加有助焊剂成分的密封树脂,将具备焊料电极的半导体芯片搭载在其上,通过回流焊(reflow)来同时进行焊料连接和树脂密封(专利文献1)。
对应于无流动(noflow)法,提出有兼具助焊剂性能的各种组成物,例如有使用具有助焊剂性能的硬化剂者、将酚树脂(phenol resin)作为硬化剂者(专利文献2)、将酚系羧酸(carboxylic acid)作为硬化剂者(专利文献3)、将酸酐(acid anhydride)作为硬化剂者(专利文献4、5)、将羧酸作为硬化剂者(专利文献6)、将芳香族酰肼(hydrazide)作为硬化剂者(专利文献7)。
另外,作为添加助焊剂成分者,已知有在酚系或者酸酐系硬化剂中添加羧酸(包含嵌段羧酸(block carboxylic acid))作为助焊剂成分者(例如专利文献8、9、10)。
专利文献1:美国专利5128746号公报
专利文献2:日本专利特开2002-232123号公报
专利文献3:日本专利特开2003-128874号公报
专利文献4:日本专利特开2001-329048号公报
专利文献5:日本专利特开2003-160639号公报
专利文献6:日本专利特开2002-293883号公报
专利文献7:日本专利特开2004-303874号公报
专利文献8:日本专利特开2002-190497号公报
专利文献9:日本专利特开2003-82064号公报
专利文献10:日本专利特开2001-223227号公报
发明内容
上述组成物的硬化剂大多是酚系或者酸酐系。但是,一般而言,使用胺系硬化剂的粘合剂对各种基材的粘着性高,几乎不会产生从基板或芯片的界面剥离,且提供可靠性高的封装。在上述专利文献6中研讨有胺加成物系硬化剂,但却得出无助焊剂性能的结果。因此,本发明的目的在于提供一种含有可在无流动法中使用的胺系硬化剂的粘合剂组成物。
本发明者们对上述课题进行积极研究,结果发现,通过将特定的含硫的苯酚化合物添加到使用有胺系硬化剂的环氧树脂组成物中,可获得可在无流动法中使用的半导体密封用环氧树脂组成物。
即,本发明是一种含有如下成分的液状环氧树脂组成物:
(A)液状环氧树脂;
(B)胺系硬化剂;
(C)含硫的苯酚化合物,相对于(A)成分及(B)成分的总量100重量份,含硫的苯酚化合物为1~20重量份;以及
(D)无机填充剂,相对于(A)液状环氧树脂100重量份,无机填充剂为50~900重量份。
进而,本发明是一种用于密封倒装芯片型半导体的上述液状环氧树脂组成物。另外,本发明提供一种含有上述液状环氧树脂组成物的硬化物的倒装芯片型半导体装置。
本发明的液状环氧树脂组成物不仅维持胺系硬化剂系的优异粘着性,而且利用特定的含硫的苯酚化合物所表现的助焊剂性能,可在利用无流动法的倒装芯片型半导体装置制造中适当使用。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1是表示本发明的倒装芯片型半导体装置的一例的剖面图。
1:有机基板 2:底部填充剂
3:焊垫 4:半导体芯片
5:凸点
具体实施方式
下面,对本发明的液状环氧树脂组成物的各成分加以说明。
[(A)液状环氧树脂]
环氧树脂是指,每一分子具有2个以上环氧基且在常温下为液状者。先前众所周知的环氧树脂都可以使用,其例如可列举,双酚A(bisphenol A)型环氧树脂、双酚AD型环氧树脂、双酚F型环氧树脂、萘(naphthalene)型环氧树脂、苯酚酚醛清漆(phenol novolac)型环氧树脂、联苯(biphenyl)型环氧树脂、缩水甘油胺(glycidyl amine)型环氧树脂、脂环式环氧树脂(cycloaliphatic epoxy resin)、二环戊二烯型环氧树脂等环氧树脂。尤其优选使用耐热性或耐湿性优异的双酚A型环氧树脂、双酚F型环氧树脂、双酚AD型环氧树脂、萘型环氧树脂作为环氧树脂。
另外,在环氧树脂中,含有少量来源于其合成过程中所使用的表氯醇(epichlorohydrin)的氯,环氧树脂中的总氯含量优选为小于等于1500ppm,特别优选为小于等于1000ppm。另外,在环氧树脂中添加等重量的离子交换水,在100℃、20小时的条件下进行萃取处理后水中氯浓度优选为小于等于10ppm。以上所述的环氧树脂可单独使用1种或者组合2种以上使用。
[(B)胺系硬化剂]
本发明中所使用的胺系硬化剂可列举芳香族胺、脂肪族胺(aliphaticamine)、聚酰胺胺(polyamidoamine)、咪唑(imidazole)类、胍(guanidine)类等,但从粘着性、耐环境试验中的可靠性观点来看,优选是使用芳香族胺。
本发明中所使用的芳香族胺系硬化剂,例如优选3,3′-二乙基-4,4′-二氨基二苯基甲烷(3,3′-diethyl-4,4′-diaminodiphenylmethane)、3,3′,5,5′-四甲基-4,4′-二氨基二苯基甲烷、3,3′,5,5′-四乙基-4,4′-二氨基二苯基甲烷、2,4-二氨基甲苯、1,4-苯二胺、1,3-苯二胺等芳香族胺。这些芳香族胺系硬化剂既可单独使用1种,也可以混合2种以上使用。
上述芳香族胺系硬化剂在常温下为固体的情况下,也可以固体状态直接添加,但如果以固体状态直接添加,则树脂粘度上升,操作性显着恶化,因此优选预先与环氧树脂或者液状芳香族胺熔融混合。在环氧树脂中进行熔融混合时,希望以后述指定的添加量,在70~150℃的温度范围内熔融混合1小时~2小时。如果混合温度不足70℃,则可能胺系硬化剂变得难以充分相熔,如果超过150℃的温度,则可能与环氧树脂反应而使粘度上升。另外,如果混合时间不足1小时,则可能胺系硬化剂不能充分相熔且导致粘度上升,如果混合时间超过2小时,则可能与环氧树脂反应而使粘度上升。与液状芳香族胺进行熔融混合的情况下,亦希望在70~150℃的温度范围内熔融混合1小时~2小时。
此外,本发明中所使用的胺系硬化剂的总添加量,优选使液状环氧树脂的环氧基量与胺系硬化剂的活性氢量的比,即[(A)液状环氧树脂的环氧基量/(B)胺系硬化剂的活性氢量]达到大于等于0.7、小于等于1.1,更优选为大于等于0.8、小于等于1.0。另外,在含有后述(E)硅酮改性(siliconemodification)环氧树脂时,(A)成分与(E)成分的环氧基总量、与(B)成分的活性氢量比,即[(A)成分的环氧基量+(E)成分的环氧基量]/[(B)成分的活性氢量]为0.7~1.1,优选为0.8~1.0。另外,代替硅酮改性环氧树脂而含有(E)硅酮改性酚树脂时,(A)成分的环氧基量、与(B)成分的活性氢量及(E)成分的酚量的总量比,即[(A)成分的环氧基量]/[(B)成分的活性氢量+(E)成分的酚性羟基量]为0.7~1.1,优选为0.8~1.0。上述的量比不足0.7时,可能残留有未反应的氨基或者酚性羟基,导致硬化物的玻璃转移温度(glass transition temperature)降低,另外对基盘的粘着强度降低。相反地,如果超过1.1,则可能硬化物会变得硬而脆,且在回流焊时产生龟裂(crack)。
[(C)含硫的苯酚化合物]
本发明的组成物,其特征在于含有含硫的苯酚化合物。该化合物提高助焊性的效果的机理并不明确,但一般认为是酚性羟基的还原能力(供氢能力)以外的硫的捕氧能力。优选使用在苯酚羟基的至少1个邻位上具有供电子取代基,例如烷基者;更优选使用具有叔丁基等大体积取代基者。一般认为供电子基可提高酚性羟基的还原能力,进一步由于位阻性,而阻止与环氧树脂的反应。
该含硫的苯酚化合物可列举:2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯]、2,4-双[(辛硫基)甲基]-邻甲酚、4,4-硫代双-(2-叔丁基-5-甲酚)、双(3,5-二-叔丁基-4-羟苯基)2,9-二甲基-4,7-二硫杂癸二酸酯、2,2-硫代双-(4-甲基-6-叔丁基苯酚)、以及这些化合物的混合物,其中优选2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯]、2,4-双[(辛硫基)甲基]-邻甲酚、4,4-硫代双-(2-叔丁基-5-甲酚)。这些化合物即使在实施例中使用的焊接温度260℃下,也可作为良好的助焊剂而发挥作用。
含硫的苯酚化合物的添加量相对于(A)环氧树脂及(B)胺系硬化剂的总量100重量份,为1~20重量份,优选为1~10重量份。添加量如果不足1重量份,则不能得到充分的助焊性能,添加量如果超过20重量份,则可能会导致玻璃转移温度降低及接着性粘着性降低。
在含硫的苯酚化合物于室温下为固体的情况下,进行粉碎处理后,也可直接以固体状态进行添加,但由于添加量而造成树脂粘度大为上升,操作性明显恶化,因此优选在预先含有液状环氧树脂或液状芳香族胺的情况下与该胺进行熔融混合。在熔融混合于环氧树脂或液状芳香族胺的情况下,希望在70~150℃的温度范围内熔融混合1小时~2小时。
[(D)无机填充剂]
为了减小膨胀系数,可在本发明的环氧树脂组成物中添加先前众所周知的各种无机填充材料,无机填充材料例如可列举熔融二氧化硅、结晶二氧化硅、氧化铝、氧化钛、二氧化硅二氧化钛、氮化硼、氮化铝、氮化硅、氧化镁、硅酸镁、铝等,这些填充材料可单独使用也可以组合2种以上使用。特别是,细球形(fine spherical)的熔融二氧化硅因为低粘度化,所以较为理想。
无机填充剂为了强化与树脂的结合强度,而优选添加以硅烷偶合剂、钛酸酯偶合剂等偶合剂预先进行表面处理者。此种偶合剂,优选使用:γ-缩水甘油氧基丙基三甲氧基硅烷、γ-缩水甘油氧基丙基甲基二乙氧基硅烷、β-(3,4-环氧基环己基)乙基三甲氧基硅烷等环氧基硅烷,N-β(氨基乙基)-γ-氨基丙基三甲氧基硅烷、γ-氨基丙基三乙氧基硅烷、N-苯基-γ-氨基丙基三甲氧基硅烷等氨基硅烷,γ-巯基硅烷等巯基硅烷(mercapto silane)等硅烷偶合剂。此处使用于表面处理的偶合剂的添加量以及表面处理方法为众所周知的量及方法即可。
该情况下的无机填充剂的添加量,优选相对于100重量份环氧树脂添加50~900重量份,更优选在100~500重量份的范围内进行添加。如果不足50重量份时,可能膨胀系数较大,在冷热试验中诱发产生龟裂。如果超过900重量份,则可能粘度变高且易于产生孔隙、或者无机填充剂导致焊料连接性降低。
本发明的环氧树脂组成物除上述成分以外,可在不损害本发明效果的范围内视情况添加下述成分。
[(E)硅酮改性环氧树脂]
在本发明的液状环氧树脂组成物中,可以添加使硬化物的应力降低的硅酮改性环氧树脂作为低应力化剂。低应力化剂,可列举:粉末状、胶状、油状等的硅酮树脂;热可塑性树脂,例如液状的聚丁二烯橡胶、丙烯酸核壳树脂等,但优选硅酮改性环氧树脂。特别优选添加如下获得的共聚物硅酮改性环氧树脂:将以下述通式(1)~(4)所表示的含有烯基之环氧树脂或者含有烯基之酚树脂的烯基与以下述平均组成式(5)所表示的1分子中硅原子数为10~400、SiH基数为1~5的有机聚硅氧烷的SiH基,进行加成反应。
(其中,R1为氢原子或者
另外,R2为氢原子或甲基,X为氢原子或碳数1~6的一价烃基,n为0~50的整数,优选为1~20的整数,m为1~5的整数,特别优选1)。
HaR3 bSiO(4-a-b)/2 (5)
(其中,式中R3为取代或者非取代的一价烃基,a为0.01~0.1,b为1.8~2.2,1.81≤a+b≤2.3)。
此外,R3的一价烃基,优选碳数为1~10者,特别优选1~8者,可列举:甲基、乙基、丙基、异丙基、丁基、异丁基、叔丁基、己基、辛基、癸基等烷基,乙烯基、烯丙基、丙烯基、丁烯基、己烯基等烯基,苯基、二甲苯基、甲苯基等芳基,苯甲基、苯乙基、苯丙基等芳烷基等,或者这些烃基的氢原子的一部分或全部以氯、氟、溴等卤素原子取代的氯甲基、溴乙基、三氟丙基等卤代一价烃基。通过将上述含有烯基之树脂与有机聚硅氧烷反应而获得共聚物的方法可采用众所周知的方法。
上述共聚物中优选下述结构(6)者。
(上述式中,R4为氢原子或碳数1~6的一价烃基,R5为-CH2CH2CH2-、-OCH2-CH(OH)-CH2-O-CH2CH2CH2-或-O-CH2CH2CH2-。L为8~398,优选18~198的整数,p为1~10的整数,q为1~10的整数。)
作为上述R4的碳数为1~6、优选为1~3的一价烃基,例如可列举:甲基、乙基、丙基、异丙基、丁基、叔丁基、戊基、己基等烷基;环戊基、环己基等环烷基;苯基等芳基;乙烯基、烯丙基等烯基,而在这些之中优选为甲基。上述R4可以分别相同,也可以不同。
上述p及q分别为1~10,优选分别为1~5的整数。如果p及/或q超过10,则可能硬化树脂过硬、耐龟裂性或粘着性恶化、树脂的可靠性大为受损,所以并不优选。
上述L为8~398,优选18~198的整数,如果L不足8,则缓和应力的聚硅氧烷部分的比例变小,无法充分获得低应力化的效果,所以并不优选,如果L超过398,则分散性降低易于分离,不仅树脂的质量不稳定,而且不能充分获得低应力化的效果,所以并不优选。
(E)硅酮改性树脂的添加量相对于100重量份(A)成分的液状环氧树脂,为0~20重量份,特别是2~15重量份。
[其他添加剂]
在本发明的液状环氧树脂组成物中,可在不损害本发明目的的范围内视情况添加硬化促进剂(hardening accelerator)、界面活性剂(interfacial activeagent)、消泡剂(antifoam)、均化剂(leveling agent)、离子捕捉剂(ion trappingagent)、碳黑(carbon black)等颜料、染料及其他添加剂。
本发明的液状环氧树脂组成物,可通过将(A)液状环氧树脂、(B)胺系硬化剂、(C)含硫的苯酚化合物、(D)无机填充剂、以及任意成分,同时或分别,视情况一边进行加热处理一边进行搅拌、溶解、混合、分散而获得。这些混合、搅拌、分散等装置并无特别限制,可以使用具备搅拌、加热装置的擂溃机、三辊研磨机(three roll mill)、球磨机(ball mill)、行星式混合机(planetary mixer)等。另外也可以将这些装置加以适当组合后使用。
此外,本发明的液状环氧树脂组成物的粘度在25℃下优选为小于等于1,000Pa·s,特别优选为小于等于500Pa·s。另外,该组成物的成形方法、成形条件优选最初在100~120℃下加热约0.5小时,然后在150~175℃下加热0.5小时~4小时左右,以进行热风处理(hot cure)。通过最初的加热,可以确实防止硬化后产生孔隙。另外,如果在150~175℃下的加热不足0.5小时,则存在无法获得充分的硬化物特性的情况。
于此,本发明中所使用的倒装芯片型半导体装置,例如如图1所示,通常为在有机基板1的布线图案面上经多个凸点5而搭载有半导体芯片4者,在上述有机基板1与半导体芯片4的缝隙以及凸点5间的缝隙中填充有底部填充剂2。本发明的组成物在用作底部填充剂的情况下特别有效。
在使用本发明的液状环氧树脂组成物作为底部填充剂的情况下,优选该硬化物的玻璃转移温度以下的膨胀系数为20~40ppm/℃。
以下,根据实施例、比较例,具体说明本发明,但本发明并不限于这些。另外,只要没有特别说明,则%、份就分别表示重量百分比(wt%)、重量份。
使用下列物质。
(A)液状环氧树脂
环氧树脂(a)双酚F型环氧树脂:RE303S-L(日本化药股份有限公司制造,环氧当量:170)
环氧树脂(b)以下述式(7)所表示的3官能型环氧树脂:Epikote 630H(日本环氧树脂股份有限公司制造,环氧当量:101)
(B)硬化剂
芳香族胺硬化剂:二乙基二氨基二苯基甲烷(日本化药股份有限公司制造,Kayahard A-A,胺当量:63.5)
(C)含硫的苯酚化合物
1)2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯](Irganox1035FF,Ciba Specialty Chemicals Co.,Ltd制造)
2)2,4-双[(辛硫基)甲基]-邻甲酚(Irganox1520,Ciba Specialty ChemicalsCo.,Ltd制造)
3)4,4-硫代双-(2-叔丁基-5-甲酚)(SumilizerWX-R,住友化学股份有限公司制造)
(D)无机填充剂
球状二氧化硅:平均粒径2μm、最大粒径10μm的球状二氧化硅(龙森股份有限公司制造)
(E)硅酮改性环氧树脂
硅酮改性环氧树脂:下述式(8)的化合物与下述式(9)的化合物的加成聚合物(重量平均分子量3800,环氧当量291)
其他添加剂
碳黑:Denka Black(电气化学工业股份有限公司制造)
硅烷偶合剂:γ-缩水甘油氧基丙基三甲氧基硅烷(信越化学工业股份有限公司制造,KBM403)
比较例及参考例中使用的化合物
松香酸(abietic acid)
2,6-二-叔丁基-4-甲酚(SumilizerBHT,住友化学股份有限公司制造)
三乙二醇-双[3-(3-叔丁基-4-羟基-5-甲基苯基)丙酸酯(Irganox245,CibaSpecialty Chemicals Co.,Ltd制造)
1,6-己二醇-双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯(Irganox259,CibaSpecialty Chemicals Co.,Ltd制造)
实施例1
将31.8重量份的环氧树脂(a)、31.8重量份的环氧树脂(b)、于33重量份的二乙基二氨基二苯基甲烷中溶解有2重量份的2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯的混合物、100重量份的球状二氧化硅、4重量份的硅酮改性环氧树脂、1重量份的硅烷偶合剂、以及1重量份的碳黑,以行星式混合机进行均匀混炼。然后,以三辊混炼机将固形原料充分进行混合分散,将得到的混合物进行真空脱泡处理后,获得液状环氧树脂组成物。
实施例2
除使用2,4-双[(辛硫基)甲基]-邻甲酚代替2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯以外,与实施例1同样进行操作,获得组成物。此外,2,4-双[(辛硫基)甲基]-邻甲酚在常温下为液体,所以直接与其他成分进行添加。
实施例3
除使用4,4-硫代双-(2-叔丁基-5-甲酚)代替2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯以外,与实施例1同样进行操作,获得组成物。
比较例1及2
在比较例1中,使用松香酸代替2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯,比较例2中不添加任何物质,除此以外,与实施例1同样进行操作,制备组成物。此处,松香酸在预先熔融添加到液状环氧树脂中后,与其他成分进行混合。
参考例1~3
在参考例1中使用2,6-二-叔丁基-4-甲酚,参考例2中使用三乙二醇-双[3-(3-叔丁基-4-羟基-5-甲基苯基)丙酸酯,参考例3中使用1,6-己二醇-双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯,来代替2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯,除此以外,与实施例1同样进行操作来制备组成物。
对于所获得的各液状环氧树脂组成物,使用以下方法进行特性评价。
(1)粘度
使用BH型旋转粘度计,以4rpm的旋转数来测定25℃时的粘度。
(2)保存性
在25℃/60%RH下将树脂组成物保存48小时,根据相对于初始粘度的粘度变化率,对适用期(可使用时间)进行如下评价。此外,粘度测定以上述条件实施。
A:相对于初始粘度的变化率不足30%,适用期良好。
B:相对于初始粘度的变化率为30~50%,适用期稍微存在问题。
C:相对于初始粘度的变化率超过100%,适用期短而不充分。
(3)粘着强度
在涂布有感光性聚酰亚胺的硅芯片上,使用模板形成上面直径为2mm、下面直径为5mm、高为3mm的圆锥体状树脂硬化物,以制成试验片。此外,试验片的成形条件为在120℃下硬化0.5小时,然后在165℃下硬化3小时。硬化后,一边以0.2mm/sec的速度挤压获得的树脂硬化物的侧面一边测定,作为初始值。然后,将硬化的试验片放入PCT(高压蒸煮试验(pressure cooker test):121℃/2.1atm)中336小时后,测定粘着力。在任一情况下,试验片的片数都以5片进行,将其平均值记作粘着力。
(4)焊料连接性
使用倒装芯片型半导体芯片以及基板(4区域(area)/1chip,凸点数576个/1区域(area),具备Sn-3.0 Ag-0.5 Cu焊料),以分配器装置在基板上涂布树脂组成物后,以倒装芯片接合机(flip chip bonder)装置搭载半导体芯片(焊料接合条件:260℃/3sec,荷重10N),在120℃下硬化0.5小时,然后在165℃下硬化3小时,制成倒装芯片型半导体试验片。对各树脂组成物,制成10片试验片(共计40区域(area)),数出确认导通的区域(area)数。
(5)孔隙
对上述焊料连接性评价中制成的倒装芯片型半导体试验片,使用超音波探伤装置,确认在树脂中产生孔隙的芯片数。
(6)剥离
对上述倒装芯片型半导体试验片中没有产生孔隙的10个,在30℃/65%RH/192小时放置后,以超音波探伤装置确认使其通过设定为最高温度265℃的IR回流焊炉5次后产生龟裂、剥离的芯片数。然后,放置在PCT(121℃/2.1atm)的环境下,确认336小时后产生龟裂、剥离的芯片数。
(7)温度循环试验
对上述倒装芯片型半导体试验片中没有产生孔隙的10个,在30℃/65%RH/192小时放置后,将-65℃/30分钟、150℃/30分钟作为1个周期,确认在250、500、750、1000周期后产生龟裂、剥离的芯片数。
将获得的结果示于表1。
[表1]
评价结果 | 实施例 | 比较例 | 参考例 | ||||||
1 | 2 | 3 | 1 | 2 | 1 | 2 | 3 | ||
粘度(Pa·s/25℃) | 57 | 48 | 55 | 58 | 50 | 53 | 55 | 56 | |
保存性 | A | A | A | C | A | A | A | A | |
粘着强度[MPa] | 初始 | 1470 | 1390 | 1440 | 1480 | 1450 | 1380 | 1420 | 1400 |
PCT336hr后 | 1270 | 1210 | 1230 | 1290 | 1300 | 1240 | 1280 | 1210 | |
焊料连接性 | 40/40 | 37/40 | 39/40 | 37/40 | 0/40 | 5/40 | 0/40 | 0/40 | |
孔隙 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | |
剥离 | IR炉5次后 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 |
PCT336hr后 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | |
温度循环 | 250周期 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 |
500周期 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | |
750周期 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | |
1000周期 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 | 0/10 |
如表1所示,各实施例的环氧树脂组成物的保存性、粘着性、焊料连接性优异,所获得的硬化物也没有孔隙,且提供可靠性高的半导体装置。另一方面,在使用羧酸作为助焊剂成分的比较例1的情况下,保存性较差。另外,在使用不含硫的苯酚化合物的参考例1~3的情况下,焊料连接性明显较差。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的结构及技术内容作出些许的更动或修饰为等同变化的等效实施例,但是凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (7)
1、一种液状环氧树脂组成物,其特征在于包含:
(A)液状环氧树脂;
(B)胺系硬化剂;
(C)含硫的苯酚化合物,相对于(A)成分及(B)成分的总量100重量份,含硫的苯酚化合物为1~20重量份;以及
(D)无机填充剂,相对于(A)成分的环氧树脂100重量份,无机填充剂为50~900重量份。
2、根据权利要求1所述的液状环氧树脂组成物,其特征在于:(C)含硫的苯酚化合物在酚性羟基的至少1个邻位上具有供电子取代基。
3、根据权利要求1或2所述的液状环氧树脂组成物,其特征在于:(C)含硫的苯酚化合物是选自2,2-硫代二乙撑双[3-(3,5-二-叔丁基-4-羟苯基)丙酸酯]、2,4-双[(辛硫基)甲基]-邻甲酚、及4,4-硫代双-(2-叔丁基-5-甲酚)中的至少1种。
4、根据权利要求1或2所述的液状环氧树脂组成物,其特征在于:(B)胺系硬化剂是芳香族胺。
5、根据权利要求1或2所述的液状环氧树脂组成物,其特征在于:相对于100重量份(A)成分的环氧树脂,进一步含有0~20重量份的(E)以下述结构(6)所表示的硅酮改性环氧树脂,
[化1]
(式中,R4为氢原子或碳数1~6的一价烃基;R5为-CH2CH2CH2-、-OCH2-CH(OH)-CH2-O-CH2CH2CH2-或-O-CH2CH2CH2-;L为8~398的整数;p为1~10的整数;q为1~10的整数)。
6、根据权利要求1或2所述的液状环氧树脂组成物,其特征在于:其是倒装芯片型半导体密封用组成物。
7、一种倒装芯片型半导体装置,其特征在于:其含有根据权利要求6所述的液状环氧树脂组成物的硬化物。
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CN106574039A (zh) * | 2014-07-31 | 2017-04-19 | 东丽株式会社 | 纤维强化复合材料用二液型环氧树脂组合物和纤维强化复合材料 |
CN113831872A (zh) * | 2020-06-23 | 2021-12-24 | 3M创新有限公司 | 环氧胶粘剂组合物、环氧胶粘剂、和制备环氧胶粘剂的方法 |
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JP5831122B2 (ja) * | 2010-10-18 | 2015-12-09 | 三菱化学株式会社 | 三次元集積回路用の層間充填材組成物、塗布液及び三次元集積回路の製造方法 |
US20170287838A1 (en) * | 2016-04-02 | 2017-10-05 | Intel Corporation | Electrical interconnect bridge |
JP7000698B2 (ja) * | 2017-03-31 | 2022-01-19 | 昭和電工マテリアルズ株式会社 | アンダーフィル用樹脂組成物、半導体装置の製造方法及び半導体装置 |
Family Cites Families (15)
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US5128746A (en) | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
US5863970A (en) * | 1995-12-06 | 1999-01-26 | Polyset Company, Inc. | Epoxy resin composition with cycloaliphatic epoxy-functional siloxane |
JP2001223227A (ja) | 2000-02-08 | 2001-08-17 | Nitto Denko Corp | 半導体封止用樹脂組成物および半導体装置 |
JP2001329048A (ja) | 2000-03-15 | 2001-11-27 | Harima Chem Inc | 封止充填剤用液状エポキシ樹脂組成物 |
JP2002190497A (ja) | 2000-12-21 | 2002-07-05 | Sony Corp | フリップチップ実装用の封止樹脂 |
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JP3606253B2 (ja) | 2001-11-27 | 2005-01-05 | 松下電工株式会社 | エポキシ樹脂組成物及び半導体装置 |
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JP2004303874A (ja) * | 2003-03-31 | 2004-10-28 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法及び半導体装置 |
JPWO2004108774A1 (ja) * | 2003-06-03 | 2006-07-20 | コニシ株式会社 | 硬化性樹脂、その製造方法及び該硬化性樹脂を含む組成物 |
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CN103814466B (zh) * | 2011-09-26 | 2017-03-15 | 瓦尔达微创新有限责任公司 | 电池组电极用的结构稳定的活性材料 |
CN106574039A (zh) * | 2014-07-31 | 2017-04-19 | 东丽株式会社 | 纤维强化复合材料用二液型环氧树脂组合物和纤维强化复合材料 |
CN113831872A (zh) * | 2020-06-23 | 2021-12-24 | 3M创新有限公司 | 环氧胶粘剂组合物、环氧胶粘剂、和制备环氧胶粘剂的方法 |
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