CN1967777A - 使导体露出的刻蚀方法 - Google Patents

使导体露出的刻蚀方法 Download PDF

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Publication number
CN1967777A
CN1967777A CNA2006101542027A CN200610154202A CN1967777A CN 1967777 A CN1967777 A CN 1967777A CN A2006101542027 A CNA2006101542027 A CN A2006101542027A CN 200610154202 A CN200610154202 A CN 200610154202A CN 1967777 A CN1967777 A CN 1967777A
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CN
China
Prior art keywords
etching
layer
mhz
sccm
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101542027A
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English (en)
Chinese (zh)
Inventor
J·J·梅扎佩莱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN1967777A publication Critical patent/CN1967777A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNA2006101542027A 2005-11-01 2006-09-13 使导体露出的刻蚀方法 Pending CN1967777A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/163,836 US7276450B2 (en) 2005-11-01 2005-11-01 Etching processes using C4F8 for silicon dioxide and CF4 for titanium nitride
US11/163,836 2005-11-01

Publications (1)

Publication Number Publication Date
CN1967777A true CN1967777A (zh) 2007-05-23

Family

ID=37994900

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101542027A Pending CN1967777A (zh) 2005-11-01 2006-09-13 使导体露出的刻蚀方法

Country Status (3)

Country Link
US (1) US7276450B2 (https=)
JP (1) JP2007129219A (https=)
CN (1) CN1967777A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882408A (zh) * 2015-05-20 2015-09-02 中国航天科技集团公司第九研究院第七七一研究所 一种降低集成电路多层金属间孔链电阻的通孔刻蚀方法
CN105977149A (zh) * 2016-05-11 2016-09-28 上海华虹宏力半导体制造有限公司 钝化层刻蚀方法及焊盘、半导体器件的制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5309601B2 (ja) 2008-02-22 2013-10-09 富士通セミコンダクター株式会社 半導体装置の製造方法
RU2392689C1 (ru) * 2009-05-26 2010-06-20 Государственное образовательное учреждение высшего профессионального образования Московский государственный институт электронной техники (технический университет) Способ реактивного ионного травления слоя нитрида титана селективно к алюминию и двуокиси кремния
US20110174774A1 (en) * 2010-01-21 2011-07-21 Ying-Chih Lin Method of descumming patterned photoresist
US20120289043A1 (en) * 2011-05-12 2012-11-15 United Microelectronics Corp. Method for forming damascene trench structure and applications thereof
US8772558B2 (en) 2011-07-26 2014-07-08 Uop Llc Methods and apparatuses for producing aromatic hydrocarbon-containing effluent
US9059250B2 (en) 2012-02-17 2015-06-16 International Business Machines Corporation Lateral-dimension-reducing metallic hard mask etch
US8999184B2 (en) * 2012-08-03 2015-04-07 Lam Research Corporation Method for providing vias
US9269678B2 (en) * 2012-10-25 2016-02-23 United Microelectronics Corp. Bond pad structure and method of manufacturing the same
US9287109B2 (en) * 2013-03-13 2016-03-15 Globalfoundries Inc. Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processes
RU2533740C1 (ru) * 2013-07-04 2014-11-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) Способ реактивного ионного травления слоя нитрида титана селективно к двуокиси кремния, поликремнию и вольфраму

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5419805A (en) * 1992-03-18 1995-05-30 Northern Telecom Limited Selective etching of refractory metal nitrides
US5930664A (en) * 1997-07-24 1999-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Process for preventing corrosion of aluminum bonding pads after passivation/ARC layer etching
US6297167B1 (en) * 1997-09-05 2001-10-02 Advanced Micro Devices, Inc. In-situ etch of multiple layers during formation of local interconnects
US20020076935A1 (en) * 1997-10-22 2002-06-20 Karen Maex Anisotropic etching of organic-containing insulating layers
US6214742B1 (en) * 1998-12-07 2001-04-10 Advanced Micro Devices, Inc. Post-via tin removal for via resistance improvement
US6096579A (en) * 1999-03-25 2000-08-01 Vanguard International Semiconductor Corporation Method for controlling the thickness of a passivation layer on a semiconductor device
US6383945B1 (en) * 1999-10-29 2002-05-07 Advanced Micro Devices, Inc. High selectivity pad etch for thick topside stacks
US6284657B1 (en) * 2000-02-25 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Non-metallic barrier formation for copper damascene type interconnects
US6479411B1 (en) * 2000-03-21 2002-11-12 Angela T. Hui Method for forming high quality multiple thickness oxide using high temperature descum
US6890863B1 (en) * 2000-04-27 2005-05-10 Micron Technology, Inc. Etchant and method of use
US6350700B1 (en) * 2000-06-28 2002-02-26 Lsi Logic Corporation Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6713402B2 (en) * 2002-05-31 2004-03-30 Texas Instruments Incorporated Methods for polymer removal following etch-stop layer etch
KR100540475B1 (ko) * 2003-04-04 2006-01-10 주식회사 하이닉스반도체 미세 패턴 형성이 가능한 반도체 장치 제조 방법
JP2006024811A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882408A (zh) * 2015-05-20 2015-09-02 中国航天科技集团公司第九研究院第七七一研究所 一种降低集成电路多层金属间孔链电阻的通孔刻蚀方法
CN105977149A (zh) * 2016-05-11 2016-09-28 上海华虹宏力半导体制造有限公司 钝化层刻蚀方法及焊盘、半导体器件的制造方法

Also Published As

Publication number Publication date
US20070095787A1 (en) 2007-05-03
US7276450B2 (en) 2007-10-02
JP2007129219A (ja) 2007-05-24

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WD01 Invention patent application deemed withdrawn after publication