CN1947258A - 半导体器件及其形成方法 - Google Patents

半导体器件及其形成方法 Download PDF

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Publication number
CN1947258A
CN1947258A CNA2005800134293A CN200580013429A CN1947258A CN 1947258 A CN1947258 A CN 1947258A CN A2005800134293 A CNA2005800134293 A CN A2005800134293A CN 200580013429 A CN200580013429 A CN 200580013429A CN 1947258 A CN1947258 A CN 1947258A
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CN
China
Prior art keywords
region
semiconductor device
anode
conductive
cathode
Prior art date
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Pending
Application number
CNA2005800134293A
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English (en)
Chinese (zh)
Inventor
祝荣华
阿米塔瓦·鲍斯
维什努·K·凯姆卡
维贾·帕塔萨拉蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
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Freescale Semiconductor Inc
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Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1947258A publication Critical patent/CN1947258A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNA2005800134293A 2004-04-30 2005-04-06 半导体器件及其形成方法 Pending CN1947258A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/836,170 2004-04-30
US10/836,170 US7095092B2 (en) 2004-04-30 2004-04-30 Semiconductor device and method of forming the same

Publications (1)

Publication Number Publication Date
CN1947258A true CN1947258A (zh) 2007-04-11

Family

ID=35187641

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800134293A Pending CN1947258A (zh) 2004-04-30 2005-04-06 半导体器件及其形成方法

Country Status (6)

Country Link
US (2) US7095092B2 (https=)
EP (1) EP1756949A4 (https=)
JP (1) JP5172330B2 (https=)
CN (1) CN1947258A (https=)
TW (1) TWI364057B (https=)
WO (1) WO2005111817A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137703A (zh) * 2011-11-28 2013-06-05 瑞萨电子株式会社 半导体器件
CN106653835A (zh) * 2015-11-04 2017-05-10 苏州同冠微电子有限公司 一种igbt结构及其背面制造方法

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US7525779B2 (en) * 2004-08-30 2009-04-28 Zi-Ping Chen Diode strings and electrostatic discharge protection circuits
TWI233688B (en) * 2004-08-30 2005-06-01 Ind Tech Res Inst Diode structure with low substrate leakage current and applications thereof
US7466006B2 (en) * 2005-05-19 2008-12-16 Freescale Semiconductor, Inc. Structure and method for RESURF diodes with a current diverter
US7439584B2 (en) * 2005-05-19 2008-10-21 Freescale Semiconductor, Inc. Structure and method for RESURF LDMOSFET with a current diverter
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
JP2009520349A (ja) * 2005-12-19 2009-05-21 エヌエックスピー ビー ヴィ 統合された高電圧ダイオード及びその製造方法
US20070200136A1 (en) * 2006-02-28 2007-08-30 Ronghua Zhu Isolated zener diodes
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
JP4459213B2 (ja) * 2006-11-07 2010-04-28 日本テキサス・インスツルメンツ株式会社 サイリスタの駆動方法
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
JP5534298B2 (ja) * 2009-06-16 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置
US8198703B2 (en) * 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
TWI405250B (zh) * 2010-04-13 2013-08-11 Richtek Technology Corp 半導體元件雜質濃度分布控制方法與相關半導體元件
US8278710B2 (en) 2010-07-23 2012-10-02 Freescale Semiconductor, Inc. Guard ring integrated LDMOS
JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
US8629513B2 (en) 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making
US9231120B2 (en) * 2012-06-29 2016-01-05 Freescale Semiconductor, Inc. Schottky diode with leakage current control structures
US9059008B2 (en) * 2012-10-19 2015-06-16 Freescale Semiconductor, Inc. Resurf high voltage diode
JP6120586B2 (ja) * 2013-01-25 2017-04-26 ローム株式会社 ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子
JP2014203851A (ja) * 2013-04-01 2014-10-27 株式会社東芝 半導体装置及びその製造方法
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
US9425266B2 (en) * 2014-10-13 2016-08-23 Semiconductor Components Industries, Llc Integrated floating diode structure and method therefor
US9748330B2 (en) 2016-01-11 2017-08-29 Semiconductor Component Industries, Llc Semiconductor device having self-isolating bulk substrate and method therefor
US10026728B1 (en) 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
US10224323B2 (en) 2017-08-04 2019-03-05 Semiconductor Components Industries, Llc Isolation structure for semiconductor device having self-biasing buried layer and method therefor
US20200194581A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same

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US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4345163A (en) * 1980-05-15 1982-08-17 Bell Telephone Laboratories, Incorporated Control circuitry for high voltage solid-state switches
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
EP0314399A3 (en) * 1987-10-30 1989-08-30 Precision Monolithics Inc. Buried zener diode and method of forming the same
US5414292A (en) * 1993-05-26 1995-05-09 Siliconix Incorporated Junction-isolated floating diode
EP0700089A1 (en) * 1994-08-19 1996-03-06 STMicroelectronics S.r.l. A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
TW417307B (en) * 1998-09-23 2001-01-01 Koninkl Philips Electronics Nv Semiconductor device
JP3275850B2 (ja) * 1998-10-09 2002-04-22 日本電気株式会社 高耐圧ダイオードとその製造方法
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
JP2002203956A (ja) * 2000-12-28 2002-07-19 Mitsubishi Electric Corp 半導体装置
JP4074074B2 (ja) * 2001-09-17 2008-04-09 株式会社東芝 半導体装置
JP4067346B2 (ja) * 2002-06-25 2008-03-26 三洋電機株式会社 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137703A (zh) * 2011-11-28 2013-06-05 瑞萨电子株式会社 半导体器件
CN106653835A (zh) * 2015-11-04 2017-05-10 苏州同冠微电子有限公司 一种igbt结构及其背面制造方法

Also Published As

Publication number Publication date
JP2007535812A (ja) 2007-12-06
WO2005111817A3 (en) 2006-04-20
WO2005111817A2 (en) 2005-11-24
EP1756949A4 (en) 2009-07-08
US7095092B2 (en) 2006-08-22
US20050245020A1 (en) 2005-11-03
JP5172330B2 (ja) 2013-03-27
EP1756949A2 (en) 2007-02-28
TWI364057B (en) 2012-05-11
US20060244081A1 (en) 2006-11-02
US7476593B2 (en) 2009-01-13
TW200609995A (en) 2006-03-16

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Open date: 20070411