CN1930524B - 使具有面涂层的深紫外线光致抗蚀剂成像的方法及其材料 - Google Patents

使具有面涂层的深紫外线光致抗蚀剂成像的方法及其材料 Download PDF

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Publication number
CN1930524B
CN1930524B CN200580007583XA CN200580007583A CN1930524B CN 1930524 B CN1930524 B CN 1930524B CN 200580007583X A CN200580007583X A CN 200580007583XA CN 200580007583 A CN200580007583 A CN 200580007583A CN 1930524 B CN1930524 B CN 1930524B
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China
Prior art keywords
photoresist
barrier coating
polymer
group
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN200580007583XA
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English (en)
Chinese (zh)
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CN1930524A (zh
Inventor
F·M·霍利亨
R·R·达美尔
A·R·罗马诺
R·萨卡穆里
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Merck Patent GmbH
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AZ Electronic Materials USA Corp
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Publication date
Priority claimed from US11/044,305 external-priority patent/US7473512B2/en
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of CN1930524A publication Critical patent/CN1930524A/zh
Application granted granted Critical
Publication of CN1930524B publication Critical patent/CN1930524B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Paints Or Removers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN200580007583XA 2004-03-09 2005-03-08 使具有面涂层的深紫外线光致抗蚀剂成像的方法及其材料 Expired - Lifetime CN1930524B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US10/796,376 US20050202351A1 (en) 2004-03-09 2004-03-09 Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US10/796,376 2004-03-09
US10/875,596 US20050202347A1 (en) 2004-03-09 2004-06-24 Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US10/875,596 2004-06-24
US11/044,305 2005-01-27
US11/044,305 US7473512B2 (en) 2004-03-09 2005-01-27 Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
PCT/IB2005/000627 WO2005088397A2 (en) 2004-03-09 2005-03-08 A process of imaging a deep ultraviolet photoresist with a top coating and materials thereof

Publications (2)

Publication Number Publication Date
CN1930524A CN1930524A (zh) 2007-03-14
CN1930524B true CN1930524B (zh) 2012-07-18

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CN200580007583XA Expired - Lifetime CN1930524B (zh) 2004-03-09 2005-03-08 使具有面涂层的深紫外线光致抗蚀剂成像的方法及其材料

Country Status (4)

Country Link
US (2) US20050202351A1 (https=)
JP (2) JP4839470B2 (https=)
CN (1) CN1930524B (https=)
MY (1) MY145561A (https=)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI297809B (https=) * 2001-10-24 2008-06-11 Toyo Boseki
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP4265766B2 (ja) * 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
KR101243527B1 (ko) * 2004-01-15 2013-03-20 제이에스알 가부시끼가이샤 액침용 상층막 형성 조성물 및 포토레지스트 패턴 형성 방법
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
KR100887202B1 (ko) * 2004-04-27 2009-03-06 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
US7855048B1 (en) * 2004-05-04 2010-12-21 Advanced Micro Devices, Inc. Wafer assembly having a contrast enhancing top anti-reflecting coating and method of lithographic processing
JP4343022B2 (ja) * 2004-05-10 2009-10-14 東京エレクトロン株式会社 基板の処理方法及び基板の処理装置
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP2006004964A (ja) * 2004-06-15 2006-01-05 Nec Electronics Corp 露光装置および露光方法
JP4989047B2 (ja) * 2004-07-02 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 浸漬リソグラフィ用の組成物及びプロセス
KR100598176B1 (ko) * 2004-07-06 2006-07-10 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4264038B2 (ja) * 2004-07-13 2009-05-13 パナソニック株式会社 液浸露光用の液体及びパターン形成方法
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4368266B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4621451B2 (ja) * 2004-08-11 2011-01-26 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4520245B2 (ja) * 2004-08-17 2010-08-04 セントラル硝子株式会社 リソグラフィー用トップコート膜の製造方法
EP2468780B1 (en) 2004-09-30 2013-11-13 JSR Corporation Copolymer and top coating composition
JP2006113140A (ja) * 2004-10-12 2006-04-27 Tokyo Ohka Kogyo Co Ltd 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
US7531289B2 (en) * 2004-10-28 2009-05-12 Shin-Etsu Chemical Co., Ltd. Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process
JP4499544B2 (ja) * 2004-12-10 2010-07-07 パナソニック株式会社 液浸露光用化学増幅型ポジ型レジスト材料及びそれを用いたパターン形成方法
US7491661B2 (en) * 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7799883B2 (en) * 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
US7288362B2 (en) * 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance
JP4634822B2 (ja) * 2005-02-24 2011-02-16 株式会社東芝 レジストパターン形成方法および半導体装置の製造方法
JP4600112B2 (ja) * 2005-03-24 2010-12-15 Ｊｓｒ株式会社 液浸用上層膜形成組成物およびフォトレジストパターン形成方法
US7223527B2 (en) * 2005-04-21 2007-05-29 Winbond Electronics Corp. Immersion lithography process, and structure used for the same and patterning process
JP5203575B2 (ja) * 2005-05-04 2013-06-05 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US20060263724A1 (en) * 2005-05-17 2006-11-23 Joseph Chen Method for forming material layer between liquid and photoresist layer
US7807335B2 (en) * 2005-06-03 2010-10-05 International Business Machines Corporation Immersion lithography contamination gettering layer
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
US7927779B2 (en) * 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
TWI346837B (en) * 2005-07-12 2011-08-11 Tokyo Ohka Kogyo Co Ltd Protective film-forming material and method of photoresist patterning with it
JP4611137B2 (ja) * 2005-07-12 2011-01-12 東京応化工業株式会社 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法
US8383322B2 (en) * 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
KR100688569B1 (ko) * 2005-08-30 2007-03-02 삼성전자주식회사 플루오르를 함유하는 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
US7993808B2 (en) * 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
US8158325B2 (en) 2005-10-03 2012-04-17 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
US20070087125A1 (en) * 2005-10-14 2007-04-19 Central Glass Company, Limited. Process for producing top coat film used in lithography
US7629106B2 (en) * 2005-11-16 2009-12-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
TWI479266B (zh) * 2005-12-27 2015-04-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
US8404427B2 (en) * 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
JP4866605B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
US20070196773A1 (en) * 2006-02-22 2007-08-23 Weigel Scott J Top coat for lithography processes
EP2005222A4 (en) * 2006-04-03 2010-07-28 COMPARED TO IMMERSION LIQUIDS SOLVOPHOBE INSERTION SURFACES AND OPTICAL WINDOWS
US20080299487A1 (en) * 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
US7781157B2 (en) * 2006-07-28 2010-08-24 International Business Machines Corporation Method for using compositions containing fluorocarbinols in lithographic processes
US8518628B2 (en) * 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
JP4813333B2 (ja) * 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
US20080311530A1 (en) * 2007-06-15 2008-12-18 Allen Robert D Graded topcoat materials for immersion lithography
JP2009122325A (ja) * 2007-11-14 2009-06-04 Fujifilm Corp トップコート組成物、それを用いたアルカリ現像液可溶性トップコート膜及びそれを用いたパターン形成方法
TWI505046B (zh) * 2008-01-24 2015-10-21 Jsr股份有限公司 光阻圖型之形成方法及微細化光阻圖型之樹脂組成物
US8163468B2 (en) * 2008-03-10 2012-04-24 Micron Technology, Inc. Method of reducing photoresist defects during fabrication of a semiconductor device
KR20110010095A (ko) * 2008-05-19 2011-01-31 제이에스알 가부시끼가이샤 액침 노광용 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법
JP2009283564A (ja) * 2008-05-20 2009-12-03 Panasonic Corp バリア膜形成用材料及びそれを用いたパターン形成方法
US7704674B1 (en) * 2008-12-31 2010-04-27 Gilles Amblard Method for patterning a photo-resist in an immersion lithography process
JP5287552B2 (ja) * 2009-07-02 2013-09-11 信越化学工業株式会社 光酸発生剤並びにレジスト材料及びパターン形成方法
US9223209B2 (en) * 2010-02-19 2015-12-29 International Business Machines Corporation Sulfonamide-containing photoresist compositions and methods of use
US9223217B2 (en) 2010-02-19 2015-12-29 International Business Machines Corporation Sulfonamide-containing topcoat and photoresist additive compositions and methods of use
US8501389B2 (en) * 2010-03-23 2013-08-06 Jsr Corporation Upper layer-forming composition and resist patterning method
US9529265B2 (en) 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
KR102775869B1 (ko) 2017-01-03 2025-03-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102278608B1 (ko) 2017-03-10 2021-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US11709422B2 (en) * 2020-09-17 2023-07-25 Meta Platforms Technologies, Llc Gray-tone lithography for precise control of grating etch depth
CN116149135B (zh) * 2021-11-23 2026-02-17 上海新阳半导体材料股份有限公司 一种厚膜光刻胶用氨污染抑制添加剂及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0522990B1 (en) * 1991-06-28 1996-09-25 International Business Machines Corporation Top antireflective coating films
JP3344063B2 (ja) * 1994-02-24 2002-11-11 ジェイエスアール株式会社 塩基遮断性反射防止膜およびレジストパターンの形成方法
JP3402415B2 (ja) * 1994-03-03 2003-05-06 沖電気工業株式会社 レジストパターン形成方法
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US20040009425A1 (en) * 2002-03-06 2004-01-15 French Roger Harquail Radiation durable organic compounds with high transparency at 157 nm, and method for preparing
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US6875555B1 (en) * 2003-09-16 2005-04-05 E.I. Du Pont De Nemours And Company Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes)
US7432042B2 (en) * 2003-12-03 2008-10-07 United Microelectronics Corp. Immersion lithography process and mask layer structure applied in the same
JP5301070B2 (ja) * 2004-02-16 2013-09-25 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法
JP4507891B2 (ja) * 2004-02-20 2010-07-21 ダイキン工業株式会社 液浸リソグラフィーに用いるレジスト積層体
JP3954066B2 (ja) * 2004-02-25 2007-08-08 松下電器産業株式会社 バリア膜形成用材料及びそれを用いたパターン形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2000-305269A 2000.11.02

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Publication number Publication date
US20050202351A1 (en) 2005-09-15
JP2007528511A (ja) 2007-10-11
US20050202347A1 (en) 2005-09-15
JP5114806B2 (ja) 2013-01-09
JP2011145695A (ja) 2011-07-28
CN1930524A (zh) 2007-03-14
MY145561A (en) 2012-02-29
JP4839470B2 (ja) 2011-12-21

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