MY145561A - A process for imaging a deep ultraviolet photoresist with a top coating and materials thereof - Google Patents
A process for imaging a deep ultraviolet photoresist with a top coating and materials thereofInfo
- Publication number
- MY145561A MY145561A MYPI20050922A MYPI20050922A MY145561A MY 145561 A MY145561 A MY 145561A MY PI20050922 A MYPI20050922 A MY PI20050922A MY PI20050922 A MYPI20050922 A MY PI20050922A MY 145561 A MY145561 A MY 145561A
- Authority
- MY
- Malaysia
- Prior art keywords
- imaging
- deep ultraviolet
- materials
- top coating
- photoresist
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 4
- 238000003384 imaging method Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
- 238000000671 immersion lithography Methods 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Paints Or Removers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/796,376 US20050202351A1 (en) | 2004-03-09 | 2004-03-09 | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US10/875,596 US20050202347A1 (en) | 2004-03-09 | 2004-06-24 | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US11/044,305 US7473512B2 (en) | 2004-03-09 | 2005-01-27 | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY145561A true MY145561A (en) | 2012-02-29 |
Family
ID=34919858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20050922A MY145561A (en) | 2004-03-09 | 2005-03-07 | A process for imaging a deep ultraviolet photoresist with a top coating and materials thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20050202351A1 (https=) |
| JP (2) | JP4839470B2 (https=) |
| CN (1) | CN1930524B (https=) |
| MY (1) | MY145561A (https=) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI297809B (https=) * | 2001-10-24 | 2008-06-11 | Toyo Boseki | |
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| JP2005099646A (ja) * | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法 |
| JP4265766B2 (ja) * | 2003-08-25 | 2009-05-20 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法 |
| KR101243527B1 (ko) * | 2004-01-15 | 2013-03-20 | 제이에스알 가부시끼가이샤 | 액침용 상층막 형성 조성물 및 포토레지스트 패턴 형성 방법 |
| JP4355944B2 (ja) * | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
| KR100887202B1 (ko) * | 2004-04-27 | 2009-03-06 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법 |
| KR100574490B1 (ko) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
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| KR100598176B1 (ko) * | 2004-07-06 | 2006-07-10 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
| JP4551704B2 (ja) * | 2004-07-08 | 2010-09-29 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
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| JP4368267B2 (ja) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| JP4368266B2 (ja) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| JP4621451B2 (ja) * | 2004-08-11 | 2011-01-26 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
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| EP2468780B1 (en) | 2004-09-30 | 2013-11-13 | JSR Corporation | Copolymer and top coating composition |
| JP2006113140A (ja) * | 2004-10-12 | 2006-04-27 | Tokyo Ohka Kogyo Co Ltd | 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法 |
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| JP4499544B2 (ja) * | 2004-12-10 | 2010-07-07 | パナソニック株式会社 | 液浸露光用化学増幅型ポジ型レジスト材料及びそれを用いたパターン形成方法 |
| US7491661B2 (en) * | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
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| JP5203575B2 (ja) * | 2005-05-04 | 2013-06-05 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | コーティング組成物 |
| US20060263724A1 (en) * | 2005-05-17 | 2006-11-23 | Joseph Chen | Method for forming material layer between liquid and photoresist layer |
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| US7358035B2 (en) * | 2005-06-23 | 2008-04-15 | International Business Machines Corporation | Topcoat compositions and methods of use thereof |
| US7927779B2 (en) * | 2005-06-30 | 2011-04-19 | Taiwan Semiconductor Manufacturing Companym, Ltd. | Water mark defect prevention for immersion lithography |
| US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
| TWI346837B (en) * | 2005-07-12 | 2011-08-11 | Tokyo Ohka Kogyo Co Ltd | Protective film-forming material and method of photoresist patterning with it |
| JP4611137B2 (ja) * | 2005-07-12 | 2011-01-12 | 東京応化工業株式会社 | 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法 |
| US8383322B2 (en) * | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
| KR100688569B1 (ko) * | 2005-08-30 | 2007-03-02 | 삼성전자주식회사 | 플루오르를 함유하는 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
| US7993808B2 (en) * | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
| US8158325B2 (en) | 2005-10-03 | 2012-04-17 | Rohm And Haas Electronic Materials Llc | Compositions and processes for photolithography |
| US20070087125A1 (en) * | 2005-10-14 | 2007-04-19 | Central Glass Company, Limited. | Process for producing top coat film used in lithography |
| US7629106B2 (en) * | 2005-11-16 | 2009-12-08 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
| TWI479266B (zh) * | 2005-12-27 | 2015-04-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| US8404427B2 (en) * | 2005-12-28 | 2013-03-26 | Fujifilm Corporation | Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition |
| JP4866605B2 (ja) * | 2005-12-28 | 2012-02-01 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
| US20070196773A1 (en) * | 2006-02-22 | 2007-08-23 | Weigel Scott J | Top coat for lithography processes |
| EP2005222A4 (en) * | 2006-04-03 | 2010-07-28 | COMPARED TO IMMERSION LIQUIDS SOLVOPHOBE INSERTION SURFACES AND OPTICAL WINDOWS | |
| US20080299487A1 (en) * | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| US7781157B2 (en) * | 2006-07-28 | 2010-08-24 | International Business Machines Corporation | Method for using compositions containing fluorocarbinols in lithographic processes |
| US8518628B2 (en) * | 2006-09-22 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface switchable photoresist |
| JP4813333B2 (ja) * | 2006-11-21 | 2011-11-09 | 東京エレクトロン株式会社 | 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体 |
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| TWI505046B (zh) * | 2008-01-24 | 2015-10-21 | Jsr股份有限公司 | 光阻圖型之形成方法及微細化光阻圖型之樹脂組成物 |
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| KR20110010095A (ko) * | 2008-05-19 | 2011-01-31 | 제이에스알 가부시끼가이샤 | 액침 노광용 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법 |
| JP2009283564A (ja) * | 2008-05-20 | 2009-12-03 | Panasonic Corp | バリア膜形成用材料及びそれを用いたパターン形成方法 |
| US7704674B1 (en) * | 2008-12-31 | 2010-04-27 | Gilles Amblard | Method for patterning a photo-resist in an immersion lithography process |
| JP5287552B2 (ja) * | 2009-07-02 | 2013-09-11 | 信越化学工業株式会社 | 光酸発生剤並びにレジスト材料及びパターン形成方法 |
| US9223209B2 (en) * | 2010-02-19 | 2015-12-29 | International Business Machines Corporation | Sulfonamide-containing photoresist compositions and methods of use |
| US9223217B2 (en) | 2010-02-19 | 2015-12-29 | International Business Machines Corporation | Sulfonamide-containing topcoat and photoresist additive compositions and methods of use |
| US8501389B2 (en) * | 2010-03-23 | 2013-08-06 | Jsr Corporation | Upper layer-forming composition and resist patterning method |
| US9529265B2 (en) | 2014-05-05 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of preparing and using photosensitive material |
| KR102775869B1 (ko) | 2017-01-03 | 2025-03-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
| KR102278608B1 (ko) | 2017-03-10 | 2021-07-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
| US11709422B2 (en) * | 2020-09-17 | 2023-07-25 | Meta Platforms Technologies, Llc | Gray-tone lithography for precise control of grating etch depth |
| CN116149135B (zh) * | 2021-11-23 | 2026-02-17 | 上海新阳半导体材料股份有限公司 | 一种厚膜光刻胶用氨污染抑制添加剂及其制备方法 |
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| EP0522990B1 (en) * | 1991-06-28 | 1996-09-25 | International Business Machines Corporation | Top antireflective coating films |
| JP3344063B2 (ja) * | 1994-02-24 | 2002-11-11 | ジェイエスアール株式会社 | 塩基遮断性反射防止膜およびレジストパターンの形成方法 |
| JP3402415B2 (ja) * | 1994-03-03 | 2003-05-06 | 沖電気工業株式会社 | レジストパターン形成方法 |
| WO2002091078A1 (en) * | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| US20040009425A1 (en) * | 2002-03-06 | 2004-01-15 | French Roger Harquail | Radiation durable organic compounds with high transparency at 157 nm, and method for preparing |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US6875555B1 (en) * | 2003-09-16 | 2005-04-05 | E.I. Du Pont De Nemours And Company | Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes) |
| US7432042B2 (en) * | 2003-12-03 | 2008-10-07 | United Microelectronics Corp. | Immersion lithography process and mask layer structure applied in the same |
| JP5301070B2 (ja) * | 2004-02-16 | 2013-09-25 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法 |
| JP4507891B2 (ja) * | 2004-02-20 | 2010-07-21 | ダイキン工業株式会社 | 液浸リソグラフィーに用いるレジスト積層体 |
| JP3954066B2 (ja) * | 2004-02-25 | 2007-08-08 | 松下電器産業株式会社 | バリア膜形成用材料及びそれを用いたパターン形成方法 |
-
2004
- 2004-03-09 US US10/796,376 patent/US20050202351A1/en not_active Abandoned
- 2004-06-24 US US10/875,596 patent/US20050202347A1/en not_active Abandoned
-
2005
- 2005-03-07 MY MYPI20050922A patent/MY145561A/en unknown
- 2005-03-08 JP JP2007502433A patent/JP4839470B2/ja not_active Expired - Fee Related
- 2005-03-08 CN CN200580007583XA patent/CN1930524B/zh not_active Expired - Lifetime
-
2011
- 2011-03-09 JP JP2011050965A patent/JP5114806B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20050202351A1 (en) | 2005-09-15 |
| JP2007528511A (ja) | 2007-10-11 |
| US20050202347A1 (en) | 2005-09-15 |
| JP5114806B2 (ja) | 2013-01-09 |
| JP2011145695A (ja) | 2011-07-28 |
| CN1930524A (zh) | 2007-03-14 |
| CN1930524B (zh) | 2012-07-18 |
| JP4839470B2 (ja) | 2011-12-21 |
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