CN1922728B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1922728B
CN1922728B CN2005800052715A CN200580005271A CN1922728B CN 1922728 B CN1922728 B CN 1922728B CN 2005800052715 A CN2005800052715 A CN 2005800052715A CN 200580005271 A CN200580005271 A CN 200580005271A CN 1922728 B CN1922728 B CN 1922728B
Authority
CN
China
Prior art keywords
semiconductor device
outer electrode
impedance
circuit
rewiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800052715A
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English (en)
Chinese (zh)
Other versions
CN1922728A (zh
Inventor
岩田悠贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN1922728A publication Critical patent/CN1922728A/zh
Application granted granted Critical
Publication of CN1922728B publication Critical patent/CN1922728B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2005800052715A 2004-12-03 2005-11-25 半导体装置 Expired - Fee Related CN1922728B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP350882/2004 2004-12-03
JP2004350882 2004-12-03
PCT/JP2005/021686 WO2006059547A1 (ja) 2004-12-03 2005-11-25 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010101293355A Division CN101814458B (zh) 2004-12-03 2005-11-25 半导体装置

Publications (2)

Publication Number Publication Date
CN1922728A CN1922728A (zh) 2007-02-28
CN1922728B true CN1922728B (zh) 2010-05-05

Family

ID=36564981

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2010101293355A Expired - Fee Related CN101814458B (zh) 2004-12-03 2005-11-25 半导体装置
CN2005800052715A Expired - Fee Related CN1922728B (zh) 2004-12-03 2005-11-25 半导体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2010101293355A Expired - Fee Related CN101814458B (zh) 2004-12-03 2005-11-25 半导体装置

Country Status (6)

Country Link
US (1) US20090166856A1 (enExample)
JP (1) JP5039384B2 (enExample)
KR (1) KR20070088266A (enExample)
CN (2) CN101814458B (enExample)
TW (1) TW200620574A (enExample)
WO (1) WO2006059547A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102244021B (zh) * 2011-07-18 2013-05-01 江阴长电先进封装有限公司 Low-k芯片封装方法
JP2013026481A (ja) * 2011-07-22 2013-02-04 Teramikros Inc 半導体装置及び半導体装置の実装構造
US9343418B2 (en) * 2013-11-05 2016-05-17 Xilinx, Inc. Solder bump arrangements for large area analog circuitry
US10115706B2 (en) * 2015-10-02 2018-10-30 Samsung Electronics Co., Ltd. Semiconductor chip including a plurality of pads
CN105575935A (zh) * 2016-02-25 2016-05-11 中国电子科技集团公司第十三研究所 Cmos驱动器晶圆级封装及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321299A (en) * 1990-05-30 1994-06-14 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
CN1250227A (zh) * 1998-09-18 2000-04-12 株式会社日立制作所 半导体装置
US6498396B1 (en) * 1995-03-30 2002-12-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor chip scale package and ball grid array structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0639454Y2 (ja) * 1988-09-20 1994-10-12 三洋電機株式会社 半導体集積回路
TW577152B (en) * 2000-12-18 2004-02-21 Hitachi Ltd Semiconductor integrated circuit device
DE10139985B4 (de) * 2001-08-22 2005-10-27 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiterchip sowie Verfahren zu seiner Herstellung
TW577160B (en) * 2002-02-04 2004-02-21 Casio Computer Co Ltd Semiconductor device and manufacturing method thereof
US6734472B2 (en) * 2002-04-25 2004-05-11 Synplicity, Inc. Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device
CN1180474C (zh) * 2002-06-13 2004-12-15 威盛电子股份有限公司 芯片封装结构及结构中的基底板
JP2004031790A (ja) * 2002-06-27 2004-01-29 Hitachi Maxell Ltd 半導体チップ
JP2004079701A (ja) * 2002-08-14 2004-03-11 Sony Corp 半導体装置及びその製造方法
JP5183186B2 (ja) * 2007-12-14 2013-04-17 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321299A (en) * 1990-05-30 1994-06-14 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US6498396B1 (en) * 1995-03-30 2002-12-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor chip scale package and ball grid array structures
CN1250227A (zh) * 1998-09-18 2000-04-12 株式会社日立制作所 半导体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2004-31790A 2001.01.29

Also Published As

Publication number Publication date
TW200620574A (en) 2006-06-16
US20090166856A1 (en) 2009-07-02
CN101814458B (zh) 2012-05-30
CN101814458A (zh) 2010-08-25
TWI379387B (enExample) 2012-12-11
CN1922728A (zh) 2007-02-28
JPWO2006059547A1 (ja) 2008-06-05
KR20070088266A (ko) 2007-08-29
WO2006059547A1 (ja) 2006-06-08
JP5039384B2 (ja) 2012-10-03

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100505

Termination date: 20181125

CF01 Termination of patent right due to non-payment of annual fee