CN1915810A - 常压烧结碳化硅制品的快速烧结法 - Google Patents

常压烧结碳化硅制品的快速烧结法 Download PDF

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CN1915810A
CN1915810A CNA2006101070026A CN200610107002A CN1915810A CN 1915810 A CN1915810 A CN 1915810A CN A2006101070026 A CNA2006101070026 A CN A2006101070026A CN 200610107002 A CN200610107002 A CN 200610107002A CN 1915810 A CN1915810 A CN 1915810A
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sintering
silicon carbide
normal pressure
products
temperature
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CN100402423C (zh
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蔡鸣
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Shanghai ASUS fine ceramic Limited by Share Ltd
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HUASHUO PRECISION CERAMIC CO Ltd ZHENGZHOU
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明公开了一种常压烧结碳化硅制品的快速烧结法,A.在900℃以前,无论产品形状大小为何,均可按12~15℃/分钟的速度升温;B.900℃以后,可按15~18℃/分钟的速度快速升温至1600℃,并保温0~5分钟;C.而后再按8~10℃/分的速度升温至2300℃,保温25~30分钟,即完成烧结,得到产品密度平均在3.10~3.15g/cm3之间。按照本发明烧结方法,每炉的碳化硅制品烧结时间在4-6小时即可完成,同时保证产品质量,既不过烧、不欠烧,产品密度平均在3.10-3.15g/cm3之间。生坯成型碳化硅制品中的成型助剂在800℃前全部分解挥发,其残余量为氮、碳,大大提高了烧成成品质量,达到了节能高效常压烧结碳化硅制品的目的。

Description

常压烧结碳化硅制品的快速烧结法
技术领域
本发明涉及碳化硅制品的烧结方法,尤其是涉及常压烧结碳化硅制品的快速烧结法。
背景技术
常压烧结碳化硅以其优异的高强度,高硬度,耐高温,耐磨损,耐腐蚀性能被广泛地应用在现代工业生产各个领域之中。相关理论研究表明,常压烧结Sic的烧成,在合乎质量要求的粉料及成型技术的保证下,其烧结技术表现为(1)、必须达到常压烧结Sic的烧成温度2200-2500℃;(2)、必须设计合理的烧结曲线;(3)必须在保护气氛下进行烧结。但在常压烧结Sic烧结理论及烧结生产技术资料中,对常压烧结Sic最终烧成时间均无详细及统一标准。如美国Carborundum公司介绍从4至100个小时。而国内相关研究资料则表明一般需12-18小时。在实际生产中,最终烧成时间的长短对产品的成本控制、生产设备效率的提高和产品质量的控制起着至关重要的作用。如何在最短的时间内,烧出合乎质量标准的产品,是大规模、工业化生产常压烧结Sic产品不可绕过的门槛。
发明内容
本发明目的在于提供一种烧结成本低、生产效率高的常压烧结碳化硅制品的快速烧结法。
为实现上述目的,本发明可采取下述技术方案:
本发明所述的常压烧结碳化硅制品的快速烧结法,
A、在900℃以前,无论产品形状大小为何,均可按12~15℃/分钟的速度升温;
B、900℃以后,可按15~18℃/分钟的速度快速升温至1600℃,并保温0~5分钟;
C、而后再按8~10℃/分的速度升温至2300℃,保温25~30分钟,即完成烧结,得到产品密度平均在3.10~3.15g/cm3之间。
按照本发明烧结方法,每炉的碳化硅制品烧结时间在4-6小时即可完成,同时保证产品质量,既不过烧、不欠烧,产品密度平均在3.10-3.15g/cm3之间。生坯成型碳化硅制品中的成型助剂在800℃前全部分解挥发,其残余量为氮、碳,大大提高了烧成成品质量;科学的升温速度,使生坯成型碳化硅制品中的成型助剂、烧结助剂、脱模助剂等其它高分子材料在烧结过程中,各自以不同的温度分解、挥发,既避免了由于升温过快造成毛坯的损害,如裂缝等,又缩短了烧成时间,大大降低了烧制过程中的能源消耗量,达到了节能高效常压烧结碳化硅制品的目的。
具体实施方式
本发明所述的常压烧结碳化硅制品的快速烧结法,A、对于高度在10mm以上,内径10-70mm,密度在1.87g/cm3-1.89g/cm3的生坯成型碳化硅制品,在温度低于800℃以前采用8℃-10℃/分钟的升温速度;
B、对于高度在10mm以下,内径在80mm-200mm,密度在1.87g/cm3-1.89g/cm3的生坯成型碳化硅制品,在温度低于800℃以前采用5℃/分钟的升温速度控制;
C、对于单件用粉量在1kg-20kg之间,密度在1.87g/cm3-1.89g/cm3的生坯成型碳化硅制品,在温度低于800℃以前采用5℃-6℃/分钟的升温速度;
D、在上述生坯成型碳化硅制品烧结过程中,当升温至800℃时,升温速度提高为9℃-10℃/分钟,在炉温升至1500℃时,保温18-20分钟,而后快速升至2300℃,保温25-30分钟,烧结完成,得到产品密度平均在3.10-3.15g/cm3之间。

Claims (1)

1、一种常压烧结碳化硅制品的快速烧结法,其特征在于:
A、在900℃以前,无论产品形状大小为何,均可按12~15℃/分钟的速度升温;
B、900℃以后,可按15~18℃/分钟的速度快速升温至1600℃,并保温0~5分钟;
C、而后再按8~10℃/分的速度升温至2300℃,保温25~30分钟,即完成烧结,得到产品密度平均在3.10~3.15g/cm3之间。
CNB2006101070026A 2006-09-07 2006-09-07 常压烧结碳化硅制品的快速烧结法 Active CN100402423C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105294116A (zh) * 2015-07-07 2016-02-03 洛阳名力科技开发有限公司 碳化硅陶瓷液相烧结防粘方法

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* Cited by examiner, † Cited by third party
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JPS57175718A (en) * 1981-04-20 1982-10-28 Hitachi Ltd Preparation of silicon carbide fine powder
CN1021207C (zh) * 1990-11-17 1993-06-16 国营苏北砂轮厂 碳化硅砂轮的制造方法
CN1264687A (zh) * 2000-03-15 2000-08-30 武汉工业大学 纯碳粉水基分散一步法制造反应烧结碳化硅陶瓷材料的方法
CN1807356A (zh) * 2006-01-28 2006-07-26 黄黎敏 纳米碳化硅助剂烧结高纯碳化硅蜂窝陶瓷体的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105294116A (zh) * 2015-07-07 2016-02-03 洛阳名力科技开发有限公司 碳化硅陶瓷液相烧结防粘方法

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