CN1893134B - 半导体发光器件及其制造方法 - Google Patents
半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN1893134B CN1893134B CN2006101006458A CN200610100645A CN1893134B CN 1893134 B CN1893134 B CN 1893134B CN 2006101006458 A CN2006101006458 A CN 2006101006458A CN 200610100645 A CN200610100645 A CN 200610100645A CN 1893134 B CN1893134 B CN 1893134B
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- wafer
- light emitting
- semiconductor device
- manufacture method
- emitting semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 68
- 238000003776 cleavage reaction Methods 0.000 claims description 30
- 230000007017 scission Effects 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 286
- 239000010410 layer Substances 0.000 description 100
- 239000000758 substrate Substances 0.000 description 55
- 238000005336 cracking Methods 0.000 description 17
- 210000004276 hyalin Anatomy 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011435 rock Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229960002163 hydrogen peroxide Drugs 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP191731/05 | 2005-06-30 | ||
JP2005191731A JP4584785B2 (ja) | 2005-06-30 | 2005-06-30 | 半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1893134A CN1893134A (zh) | 2007-01-10 |
CN1893134B true CN1893134B (zh) | 2010-09-08 |
Family
ID=37597766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101006458A Active CN1893134B (zh) | 2005-06-30 | 2006-06-30 | 半导体发光器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7465962B2 (zh) |
JP (1) | JP4584785B2 (zh) |
CN (1) | CN1893134B (zh) |
TW (1) | TWI314367B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4743661B2 (ja) * | 2006-03-07 | 2011-08-10 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
JP5338748B2 (ja) * | 2010-06-01 | 2013-11-13 | 信越半導体株式会社 | 化合物半導体基板の製造方法及び化合物半導体基板 |
JP5598318B2 (ja) * | 2010-09-09 | 2014-10-01 | 信越半導体株式会社 | 発光素子の製造方法 |
US20130049034A1 (en) * | 2011-08-31 | 2013-02-28 | Yi Chieh Lin | Light-emitting device |
US9130107B2 (en) * | 2011-08-31 | 2015-09-08 | Epistar Corporation | Light emitting device |
CN103682020A (zh) * | 2012-08-31 | 2014-03-26 | 展晶科技(深圳)有限公司 | 发光二极管晶粒的制造方法 |
CN106025023B (zh) * | 2016-06-22 | 2019-04-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN107102506B (zh) * | 2017-07-07 | 2022-08-02 | 奥比中光科技集团股份有限公司 | 光学投影装置及其深度相机 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
CN112447561B (zh) * | 2020-12-03 | 2024-04-02 | 苏州工业园区纳米产业技术研究院有限公司 | 真空键合装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403916A (en) * | 1993-02-10 | 1995-04-04 | Sharp Kabushiki Kaisha | Method for producing a light emitting diode having transparent substrate |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JP3239061B2 (ja) * | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
JP3977572B2 (ja) | 1999-06-09 | 2007-09-19 | 株式会社東芝 | 接着型半導体基板および半導体発光素子並びにこれらの製造方法 |
JP4710148B2 (ja) * | 2001-02-23 | 2011-06-29 | パナソニック株式会社 | 窒化物半導体チップの製造方法 |
JP4154731B2 (ja) * | 2004-04-27 | 2008-09-24 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
JP2006156950A (ja) | 2004-10-29 | 2006-06-15 | Sharp Corp | 半導体発光素子の製造方法 |
JP4899348B2 (ja) * | 2005-05-31 | 2012-03-21 | 信越半導体株式会社 | 発光素子の製造方法 |
-
2005
- 2005-06-30 JP JP2005191731A patent/JP4584785B2/ja active Active
-
2006
- 2006-06-27 TW TW095123080A patent/TWI314367B/zh active
- 2006-06-30 US US11/477,654 patent/US7465962B2/en active Active
- 2006-06-30 CN CN2006101006458A patent/CN1893134B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5403916A (en) * | 1993-02-10 | 1995-04-04 | Sharp Kabushiki Kaisha | Method for producing a light emitting diode having transparent substrate |
Also Published As
Publication number | Publication date |
---|---|
US7465962B2 (en) | 2008-12-16 |
JP2007012870A (ja) | 2007-01-18 |
US20070007543A1 (en) | 2007-01-11 |
TWI314367B (en) | 2009-09-01 |
TW200715609A (en) | 2007-04-16 |
JP4584785B2 (ja) | 2010-11-24 |
CN1893134A (zh) | 2007-01-10 |
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Owner name: XIAMEN SAN AN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20150127 |
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Effective date of registration: 20150127 Address after: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: Osaka Japan Patentee before: Sharp Corporation |
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Application publication date: 20070110 Assignee: Integrated circuit Co., Ltd is pacified by Xiamen City three Assignor: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Contract record no.: 2016120000007 Denomination of invention: Semiconductor light emitting device and method of fabricating the same Granted publication date: 20100908 License type: Common License Record date: 20160311 |
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