CN1893134A - 半导体发光器件及其制造方法 - Google Patents
半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN1893134A CN1893134A CNA2006101006458A CN200610100645A CN1893134A CN 1893134 A CN1893134 A CN 1893134A CN A2006101006458 A CNA2006101006458 A CN A2006101006458A CN 200610100645 A CN200610100645 A CN 200610100645A CN 1893134 A CN1893134 A CN 1893134A
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- CN
- China
- Prior art keywords
- wafer
- light emitting
- semiconductor device
- emitting semiconductor
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005191731A JP4584785B2 (ja) | 2005-06-30 | 2005-06-30 | 半導体発光素子の製造方法 |
JP191731/05 | 2005-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1893134A true CN1893134A (zh) | 2007-01-10 |
CN1893134B CN1893134B (zh) | 2010-09-08 |
Family
ID=37597766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101006458A Active CN1893134B (zh) | 2005-06-30 | 2006-06-30 | 半导体发光器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7465962B2 (zh) |
JP (1) | JP4584785B2 (zh) |
CN (1) | CN1893134B (zh) |
TW (1) | TWI314367B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106025023A (zh) * | 2016-06-22 | 2016-10-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN107102506A (zh) * | 2017-07-07 | 2017-08-29 | 深圳奥比中光科技有限公司 | 光学投影装置及其深度相机 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
JP4743661B2 (ja) * | 2006-03-07 | 2011-08-10 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
JP5338748B2 (ja) * | 2010-06-01 | 2013-11-13 | 信越半導体株式会社 | 化合物半導体基板の製造方法及び化合物半導体基板 |
JP5598318B2 (ja) * | 2010-09-09 | 2014-10-01 | 信越半導体株式会社 | 発光素子の製造方法 |
US9130107B2 (en) * | 2011-08-31 | 2015-09-08 | Epistar Corporation | Light emitting device |
US20130049034A1 (en) * | 2011-08-31 | 2013-02-28 | Yi Chieh Lin | Light-emitting device |
CN103682020A (zh) * | 2012-08-31 | 2014-03-26 | 展晶科技(深圳)有限公司 | 发光二极管晶粒的制造方法 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
CN112447561B (zh) * | 2020-12-03 | 2024-04-02 | 苏州工业园区纳米产业技术研究院有限公司 | 真空键合装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3230638B2 (ja) * | 1993-02-10 | 2001-11-19 | シャープ株式会社 | 発光ダイオードの製造方法 |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JP3239061B2 (ja) * | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
US6177359B1 (en) | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
JP3977572B2 (ja) | 1999-06-09 | 2007-09-19 | 株式会社東芝 | 接着型半導体基板および半導体発光素子並びにこれらの製造方法 |
JP4710148B2 (ja) * | 2001-02-23 | 2011-06-29 | パナソニック株式会社 | 窒化物半導体チップの製造方法 |
JP4154731B2 (ja) * | 2004-04-27 | 2008-09-24 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
JP2006156950A (ja) | 2004-10-29 | 2006-06-15 | Sharp Corp | 半導体発光素子の製造方法 |
JP4899348B2 (ja) * | 2005-05-31 | 2012-03-21 | 信越半導体株式会社 | 発光素子の製造方法 |
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2005
- 2005-06-30 JP JP2005191731A patent/JP4584785B2/ja active Active
-
2006
- 2006-06-27 TW TW095123080A patent/TWI314367B/zh active
- 2006-06-30 US US11/477,654 patent/US7465962B2/en active Active
- 2006-06-30 CN CN2006101006458A patent/CN1893134B/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106025023A (zh) * | 2016-06-22 | 2016-10-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN106025023B (zh) * | 2016-06-22 | 2019-04-12 | 华灿光电(苏州)有限公司 | 一种黄绿光发光二极管及其制备方法 |
CN107102506A (zh) * | 2017-07-07 | 2017-08-29 | 深圳奥比中光科技有限公司 | 光学投影装置及其深度相机 |
Also Published As
Publication number | Publication date |
---|---|
TW200715609A (en) | 2007-04-16 |
TWI314367B (en) | 2009-09-01 |
JP4584785B2 (ja) | 2010-11-24 |
US7465962B2 (en) | 2008-12-16 |
JP2007012870A (ja) | 2007-01-18 |
CN1893134B (zh) | 2010-09-08 |
US20070007543A1 (en) | 2007-01-11 |
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Owner name: XIAMEN SAN AN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20150127 |
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Effective date of registration: 20150127 Address after: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: Osaka Japan Patentee before: Sharp Corporation |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20070110 Assignee: Integrated circuit Co., Ltd is pacified by Xiamen City three Assignor: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Contract record no.: 2016120000007 Denomination of invention: Semiconductor light emitting device and method of fabricating the same Granted publication date: 20100908 License type: Common License Record date: 20160311 |
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