CN1874014A - 半导体发光元件封装结构 - Google Patents

半导体发光元件封装结构 Download PDF

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CN1874014A
CN1874014A CN200510074731.1A CN200510074731A CN1874014A CN 1874014 A CN1874014 A CN 1874014A CN 200510074731 A CN200510074731 A CN 200510074731A CN 1874014 A CN1874014 A CN 1874014A
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luminous element
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packing structure
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CN100435361C (zh
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陈振贤
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Enraytek Optoelectronics Co Ltd
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NEW LIGHT SOURCE TECHNOLOGY Co Ltd
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Priority to PCT/CN2006/001165 priority patent/WO2006128375A1/zh
Priority to AU2006254610A priority patent/AU2006254610B2/en
Priority to EP06742052.1A priority patent/EP1898473A4/en
Priority to KR1020077030972A priority patent/KR20080030584A/ko
Priority to US11/921,176 priority patent/US7777237B2/en
Priority to JP2008513899A priority patent/JP5043832B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

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Abstract

本发明提供一种半导体发光元件的封装结构。根据本发明的一优选具体实施例的封装结构包括一基板、一下底座、至少一半导体发光小片及一封装材料。该基板上定义一顶表面和一底表面。该基板的该顶表面形成一第一凹陷部。该基板的该底表面形成一第二凹陷部。该第一凹陷部穿透该第二凹陷部，并与该第二凹陷部相连接。该顶表面沿着该第一凹陷部的边缘形成一凸部。该下底座嵌入于该第二凹陷部。该下底座上定义一第一表面。该至少一半导体发光小片固定于该第一表面。该封装材料用于填充该凸部的内部。

Description

半导体发光元件封装结构
技术领域
本发明涉及一半导体发光元件封装结构(Package structure)，用以封装至少一半导体发光小片，而且特别地，本发明的封装结构具有一基板，该基板上定义一底表面，该底表面形成一第二凹陷部，且一下底座(Sub-mount)嵌入于该第二凹陷部，于该下底座的上方，该至少一半导体发光小片通过其底部(Bottom)的内部电极(bond pad)固定于该下底座，该至少一半导体发光小片可以同时持续发出各种不同颜色的光源，适用于各式显示设备和照明设备。
背景技术
由于半导体发光元件(Light-emitting device，LED)具有省电、使用寿命长、反应快以及适合量产等许多优点，因此目前以半导体发光元件为光源的照明产品日益广泛。然而，现有的高功率的半导体发光元件在持续发亮一段时间后，会有温度过高的问题，目前的半导体发光元件封装结构普遍具有热阻过高的问题，因此散热装置无法有效率地降低半导体发光元件的温度。因此，提供一种能够良好散热的封装结构确有其必要性，以解决封装结构与散热模块两者间界面所具有的热阻过高的问题，有鉴于此，本发明人发挥创意，经不断地精进研发，遂有本发明的产生。
发明内容
本发明的一个目的在于提供一种半导体发光元件封装结构，该封装结构用以封装至少一半导体发光元件，并提供优选的散热效率，以改善该半导体发光元件封装结构热阻过高的问题。
根据本发明的一个优选具体实施例的半导体发光元件封装结构(Packagestructure)，该半导体发光元件封装结构包括一基板(substrate)、一下底座(Sub-mount)、至少一半导体发光小片(Semiconductor light-emitting die)及一封装材料(Package material)。该基板上定义一顶表面和一底表面，该基板的该顶表面上形成一第一凹陷部，该基板的该底表面上形成一第二凹陷部，该第一凹陷部穿透该第二凹陷部，并与该第二凹陷部相连接。在该顶表面上沿着该第一凹陷部的边缘形成一凸部，该顶表面之上亦设有多个外部电极(Outerelectrode)。该下底座与该第二凹陷部相接合，该下底座上定义一第一表面和一第二表面，该下底座嵌入于该第二凹陷部，以至于该下底座的该第一表面的一部分暴露于该第一凹陷部的内部。该至少一半导体发光小片，其中每一半导体发光小片包括一底部和一内部电极，该至少一半导体发光小片通过其底部(Bottom)的内部电极(bond pad)固定于该下底座的该第一表面暴露于该第一凹陷部内部的部分。该封装材料用于填充该凸部内部，以覆盖该至少一半导体发光小片。
根据本发明的一优选具体实施例的半导体发光元件封装结构，先前技术的封装结构热阻过高的问题可获得解决，即于高功率半导体发光元件发光过程中所产生的大量热量，亦可较传统封装结构更能有效地散热。
关于本发明的优点与精神可以通过以下的发明详述及所附图式得到进一步的了解。
附图说明
图1为根据本发明的一优选具体实施例的半导体发光元件封装结构的顶视图。
图2为根据本发明的一优选具体实施例的半导体发光元件封装结构的剖面视图。
图3为根据本发明的第二优选具体实施例的半导体发光元件封装结构的剖面视图。
图4为根据本发明的第三优选具体实施例的半导体发光元件封装结构的剖面视图。
简单符号说明
1：封装结构             11：基板
12：下底座              13：半导体发光小片
14：封装材料            15：导热胶体
16：凸部                17：外部电极
111：顶表面             112：底表面
1111：第一凹陷部        1121：第二凹陷部
121：第一表面            122：第二表面
131：小片底部
具体实施方式
本发明的主要目的在于提供一封装结构，该封装结构用以封装至少一半导体发光元件，适用于各式显示设备和照明设备。下文将详述根据本发明的优选具体实施例及其实施方式。
请参阅图1。图1为根据本发明的一优选具体实施例的半导体发光元件封装结构1的顶视图。该封装结构1具有一基板11、一下底座12和至少一半导体发光小片13，该基板11定义一顶表面111，该顶表面111之上设有多个外部电极17。该下底座12定义一第一表面121，该至少一半导体发光小片13通过其底部(Bottom)131的内部电极(bond pad)固定于该下底座12的该第一表面121。
请参阅图2。图2为根据本发明的一优选具体实施例的半导体发光元件封装结构1的剖面视图。该封装结构1包括一基板11、一下底座12、至少一半导体发光小片13，以及一封装材料14，其中与图1所示的相同元件之处，前已详叙，不再赘述。该基板11的该顶表面111形成一第一凹陷部1111，该基板11上还定义一底表面112，该基板11的该底表面112形成一第二凹陷部1121，该第二凹陷部1121与第一凹陷部1111相连接，而该下底座12嵌入于该第二凹陷部1121中，该下底座12还定义一第二表面122，该下底座12的该第一表面121暴露于该第一凹陷部1111的内部，且该顶表面111沿着第一凹陷部1111的边缘形成一凸部16。该至少一半导体发光小片13具有一底部131，该底部131固定于该下底座12的该第一表面121暴露于该第一凹陷部1111内部的部分。该封装材料14，用于填充该凸部16的内部，用以覆盖该至少一半导体发光小片13。该至少一半导体发光小片13具有内部电极，并透过线路与位于该顶表面111的外部电极17导通(Electricallycoupled)。本实施例的该至少一半导体发光小片13具有的内部电极与外部电极17的连接方式配设成串联的型态，但该等电极的连接方式，亦可采用并联的型态配接，仍可达到本发明的目的。
一导热胶体15置于该下底座12的该第一表面121与该第一凹陷部1111的该底部之间，以结合该下底座12的该第一表面121与该第一凹陷1111的该底部，亦即用以连结该基板11与该下底座12。
请参阅图3。图3为根据本发明的第二优选具体实施例的半导体发光元件封装结构1的剖面视图。其中与图2所示的相同元件之处，前已详叙，不再赘述。该下底座12的该第二表面122与该基板11的该底表面112构成一平行面，并进一步于该下底座12的该第二表面122的下方涂上一层导热胶体15，以至于该下底座12的该第二表面122与该基板11的该底表面112构成一平面。
请参阅图4。图4为根据本发明的第三优选具体实施例的半导体发光元件封装结构1的剖面视图。其中与图2所示的相同元件之处，前已详叙，不再赘述。该下底座12的该第二表面122与该基板11的该底表面112构成一平行面，并进一步于该基板11的该底表面112的下方涂上一层导热胶体15，以至于该下底座12的该第二表面122与该基板11的该底表面112构成一平面。
本发明提供了一具高散热效率的封装结构，该封装结构用以封装至少一半导体发光元件，亦可配合导热装置进一步有效排除高功率半导体发光元件所产生的大量热量，以解决传统封装结构与散热模块两者间界面所具有的热阻过高的问题。
通过以上优选具体实施例的详述，希望能更加清楚描述本发明的特征与精神，而并非以上述所揭露的优选具体实施例来对本发明的范畴加以限制。相反地，其目的是希望能涵盖各种改变及具相等性的安排于本发明所欲申请的权利要求的范畴内。

Claims (10)

1、一种半导体发光元件封装结构，包括：
一基板，该基板上定义一顶表面和一底表面，该基板的该顶表面上形成一第一凹陷部，该基板的该底表面上形成一第二凹陷部，且该第二凹陷部与该第一凹陷部相连接，在该顶表面上沿着该第一凹陷部的边缘形成一凸部，该顶表面之上设有多个外部电极；
一下底座与该第二凹陷部相接合，该下底座上定义一第一表面和一第二表面，该下底座嵌入于该第二凹陷部，以至于该下底座的该第一表面的一部分暴露于该第一凹陷部的内部。
至少一半导体发光小片，其中每一半导体发光小片包括一底部和一内部电极，该至少一半导体发光小片通过该底部固定于该下底座的该第一表面暴露于该第一凹陷部内部的部分；以及
一封装材料，该封装材料用于填充该凸部内部，以覆盖该至少一半导体发光小片。
2、如权利要求1所述的半导体发光元件封装结构，其中该第一凹陷部的大小小于该第二凹陷部的大小，以至于该第一凹陷部具有一底部。
3、如权利要求2所述的半导体发光元件封装结构，其中一导热胶体置于该下底座的该第一表面与该第一凹陷部的该底部之间，以结合该下底座的该第一表面与该第一凹陷部的该底部。
4、如权利要求1所述的半导体发光元件封装结构，其中该基板由金属、陶瓷、软性印刷电路板及硬性印刷电路板其中一种所构成。
5、如权利要求1所述的半导体发光元件封装结构，其中该下底座由半导体所组成。
6、如权利要求1所述的半导体发光元件封装结构，其中该下底座的该第二表面与该基板的该底表面构成一平行面。
7、如权利要求6所述的半导体发光元件封装结构，其中该下底座的该第二表面与该基板的该底表面构成一平面。
8、如权利要求1所述的半导体发光元件封装结构，其中该至少一半导体发光小片为一白光二极管。
9、如权利要求6所述的半导体发光元件封装结构，其中该至少一半导体发光小片包括一蓝光二极管。
10、如权利要求1所述的半导体发光元件封装结构，其中该至少一半导体发光小片包括至少一红光二极管、至少一蓝光二极管以及至少一绿光二极管。
CNB2005100747311A 2005-05-31 2005-05-31 半导体发光元件封装结构 Expired - Fee Related CN100435361C (zh)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CNB2005100747311A CN100435361C (zh) 2005-05-31 2005-05-31 半导体发光元件封装结构
AU2006254610A AU2006254610B2 (en) 2005-05-31 2006-05-31 Package structure of semiconductor light-emitting device
EP06742052.1A EP1898473A4 (en) 2005-05-31 2006-05-31 CAPACITY STRUCTURE OF SEMICONDUCTOR ILLUMINATION ELEMENT
KR1020077030972A KR20080030584A (ko) 2005-05-31 2006-05-31 반도체 발광 장치 패키지 구조
PCT/CN2006/001165 WO2006128375A1 (fr) 2005-05-31 2006-05-31 Structure de conditionnement d'un composant electroluminescent a semiconducteur
US11/921,176 US7777237B2 (en) 2005-05-31 2006-05-31 Semiconductor light-emitting device and method of fabricating the same
JP2008513899A JP5043832B2 (ja) 2005-05-31 2006-05-31 半導体発光装置およびその製造方法
US12/834,082 US7985973B2 (en) 2005-05-31 2010-07-12 Semiconductor light-emitting device and method of fabricating the same

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CN103649801A (zh) * 2011-05-20 2014-03-19 泰科电子公司 用于光学组件的可环境密封的封装
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WO2009000104A1 (fr) * 2007-06-25 2008-12-31 Jenshyan Chen Structure de boîtier de led
CN103649801A (zh) * 2011-05-20 2014-03-19 泰科电子公司 用于光学组件的可环境密封的封装
CN103649801B (zh) * 2011-05-20 2016-04-13 泰科电子公司 用于光学组件的可环境密封的封装
CN110571642A (zh) * 2018-06-05 2019-12-13 日亚化学工业株式会社 发光装置

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US7777237B2 (en) 2010-08-17
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AU2006254610A1 (en) 2006-12-07
US20100270565A1 (en) 2010-10-28
US7985973B2 (en) 2011-07-26
CN100435361C (zh) 2008-11-19
KR20080030584A (ko) 2008-04-04
JP2008543064A (ja) 2008-11-27
US20090101932A1 (en) 2009-04-23
EP1898473A1 (en) 2008-03-12
AU2006254610B2 (en) 2011-09-08
JP5043832B2 (ja) 2012-10-10

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