CN2845171Y - 发光二极体的封装结构 - Google Patents

发光二极体的封装结构 Download PDF

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CN2845171Y
CN2845171Y CNU2005201035540U CN200520103554U CN2845171Y CN 2845171 Y CN2845171 Y CN 2845171Y CN U2005201035540 U CNU2005201035540 U CN U2005201035540U CN 200520103554 U CN200520103554 U CN 200520103554U CN 2845171 Y CN2845171 Y CN 2845171Y
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light
emittingdiode
encapsulating structure
cooling base
colloid
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谢详政
黄登辉
苏文龙
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Lextar Electronics Corp
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KAIDING SCIENCE-TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

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Abstract

本实用新型的封装结构是包括有：一个用以供复数个发光二极体晶片定置的散热基座、两个支架，其沿着散热基座的边侧而延伸有导电区段，以及一构成散热基座与支架连结的绝缘胶体，使复数个发光二极体晶片利用金线与导电区段形成连结，使各发光二极体晶片不会因支架而限制金线连接位置，令各发光二极体晶片的位置可灵活配置。

Description

发光二级体的封装结构
技术领域
本实用新型是有关一种封装结构，尤指一种适用于复数个发光二极体晶片的表面黏着型封装结构。
背景技术
在发光二极体制程技术不断改良下，使得发光二极体的制造成本大幅降低，加上发光二极体可直接利用晶片光源与萤光材料的波长结合据以呈现既定的光色，而逐渐取代圣诞灯饰、手电筒、交通标志等原本属于传统灯泡的使用领域，并且以极为快速的速度扩张二极体产业的市场版图；而发光二极体在作为液晶显示器的背光源或灯具使用时，因同时使用大量的功率，且同一时问亦有复数个发光二极体被点亮，在此状况下，集体点亮的复数发光二极体将产生较多的废热，其热能虽不及钨丝灯泡的高热，如不能进行有效挥散，可能造成相关电路无法正常工作或寿命问题，由此可见，即使是以低热能见长的发光二极体，其集体工作产生的废热仍不容忽视。
如图1所示即为习有发光二极体模组封装结构，其主要是以散热片11为基材，并在其上制作具有特定线路布局的线路层12，并相互结合，于该线路层12上安装晶片21，并打上金线22或铝线，使其分别与成对接点121、122连接，在经由封胶形成胶层23，即可令各成对接点121、122配合其上的晶片21分别构成一发光二极体2，其发光二极体2是分别透过线路层12上的线路相互连接，故也可透过线路层12与外部的控制/驱动电路连接并受其控制。
然而，线路层的其中一种成形方式，是先在散热片表面形成氧化层后建立铜线路以构成线路层，遂线路层即透过该氧化层与散热片直接接触；另种方式是在散热片底面涂布一层导热胶，其上层再置一高导金属材料(如铜材)，随后利用图案转移、曝光显影、蚀刻等已知的线路制作步骤在高导金属材料上形成复数的成对接点，随即构成一线路层，以上两种成形方式的加工制程较为繁杂，容易使不良率提高，且其线路布局需因应晶片设置位置而有特定的线路。
实用新型内容
有鉴于此，本实用新型即由简单的结构即可构成发光二极体与支架的连结，并可藉定置于散热基座上达到有效散热的功用。
本实用新型的封装结构包括有：一个用以供复数个发光二极体定置的散热基座、两个支架，其沿着散热基座的边侧而延伸有导电区段，以及一构成散热基座与支架连结的胶体，使复数个发光二极体晶片利用金线与导电区段形成连结，使各发光二极体晶片不会因支架而限制金线连接位置，令各发光二极体晶片的位置可灵活配置。
附图说明
图1：是为习用发光二级体封装结构的结构示意图；
图2：是本实用新型中散热基座与支架的结构立体图；
图3：是本实用新型中散热基座与支架的结构示意图；
图4：是本实用新型中发光二级体封装结构的结构示意图；
图5：是本实用新型中发光二级体封装结构的结构分解图；
图6：是本实用新型中发光二级体封装结构的光线照射表现状态图；
图7：是为散热基座中各发光二级体另一实施例的排列结构示意图；
图8：是为本实用新型中散热基座与高功率单晶片发光二级体的结构示意图。
【图号说明】
11  散热片                     41’  金线
12  线路层                     42’  接脚
121  接点                      5     支架
122  接点                      51    导电区域
2    发光二级体                6     胶体
21   晶片                      7     封装胶体
22   金线                      71    荧光粉
23   胶层                      8     导光材
3    散热基座                  81    折射面
4    表面黏着型发光二级体      91    凸体
4’       高功率单晶片发光二级体    92    凹部
41   金线
具体实施方式
为能使贵审查员清楚本实用新型的结构组成，以及整体运作方式，兹配合图式说明如下：
本实用新型发光二极体的封装结构，其基本结构组成如图2及图3所示，是包括有：
一个散热基座3，其可以为铝基板或铜基板材质，并用以供复数个表面黏着型发光二级体4定置，各表面黏着型发光二级体4是选择性的在其内部设置一个或者复数个发光晶片。
两个支架5，其沿着散热基座3的边侧而延伸有导电区段51，如本图实施例所示，两支架5是利用绝缘胶体6连接于散热基座3的两个短边边侧，而两支架5并由散热基座3中各发光二级体4排列方向的两侧分别延伸有导电区段51。
一胶体6，构成散热基座3与支架5的连结，其胶体6围绕于散热基座3边侧，并形成一框体的形式。
整体组装时，复数个表面黏着型发光二级体4定置于散热基座3上，并打上金线41或铝线，使其分别于两侧的导电区域51连接，再于散热基座3上覆盖有一封装胶体7，其封装胶体7并容置于胶体6所形成的框体中，如图4所示，已构成一完整的发光二级体封装结构，其复数个表面黏着型发光二级体4可视所欲产生的光源效果而搭配不同发光晶片，并可进一步于封装胶体7混合有荧光粉71，以由发光二级体透过荧光粉射出的光线即与荧光粉的波长结合，而形成特定的光色。
当然，封装胶体7上方也可进一步设置有一导光材8，可改变发光二级体4的光线进行路径，如图5及图6所示，其导光材8于发光二级体光线行进路径形成有一折射面81，该光线经由折射面81会形成扩散效果，以增加光线扩散面积，而散热基座3与导光材8的固定方式，可如图5及图6所示于导光材8与胶体6接触面间形成有凸体91，而胶体6相对应于该凸体91则形成有可与其卡合的凹部92，藉由凸体91与凹部92相互卡合的作用，使导光材8得以组装固定于胶体63上方。
另外，该散热基座3内部各表面黏着型发光二极体4的排列方式可如图3所示为直线形排列，也可如图7所示为交错示排列方式；而散热基座3内也可供置放高功率单晶片发光二极体4’，如图8所示，其仅具有单颗晶片，但具有复数个接脚42’，同样利用金线41′构成各接脚42′与导电区段51的连接。
值得一提的是，本实用新型具有下列的优点：
1、复数个表面黏着型发光二极体利用金线与导电区段形成连结，使各发光二极体不会因支架而限制金线连接位置，令各发光二极体的位置可灵活配置，而具有多配置性。
2、各发光二极体视定置于由铝基板或铜基板材质所制成的散热基座上，可达到有效热的功用，具有高散热性。
3、各发光二极体可视所欲产生的光源效果而搭配不同发光晶片，以混光成欲产生的光源效果，以具有高演色性，并可进一步于封装胶体混合有萤光粉，以由发光二极体透过萤光粉射出的光线即与萤光粉的波长结合，而形成特定的光色。
4、利用简单支架及导电区段的设置，即可完成各发光二极体有效打线区域，可缩短习有制作特定线路布局线路层的工作程序，有效提高生产良率。
如上所述，本实用新型提供一较佳可行的发光二极体的封装结构，于是依法提呈新型专利的申请；然而，以上的实施说明及图式所示，是本实用新型较佳实施例，并非以此局限本实用新型，是以，举凡与本实用新型的构造、装置、特征等近似、雷同，均应属本实用新型的创设目的及申请专利范围之内。

Claims (10)

1、一种发光二极体的封装结构，其特征在于：包括有：一个用以供复数个发光二极体晶片定置的散热基座；两个支架，其沿着散热基座的边侧而延伸有导电区段；一胶体，构成散热基座与支架的连结，其胶体围绕于散热基座边侧，并形成一框体的形式。
2、如权利要求1所述的发光二极体的封装结构，其特征在于：该发光二极体晶片为高功率单晶片发光二极体。
3、如权利要求1所述的发光二极体的封装结构，其特征在于：各表面黏着型发光二极体是选择性的在其内部设置一个或者复数个发光晶片。
4、如权利要求1或2所述的发光二极体的封装结构，其特征在于：该整体散热基座上可覆盖有一封装胶体，其封装胶体并容置于胶体所形成的框体中。
5、如权利要求4所述的发光二极体的封装结构，其特征在于：该封装胶体中混合有萤光粉。
6、如权利要求1或2所述的发光二极体的封装结构，其特征在于：该整体散热基座中覆盖有一封装胶体，而封装胶体上方也进一步设置有一导光材。
7、如权利要求6所述的发光二极体的封装结构，其特征在于：该导光材于发光二极体光线行进路径形成有一折射面。
8、如权利要求6所述的发光二极体的封装结构，其特征在于：该导光材与胶体接触面间形成有凸体，而胶体相对应于该凸体则形成有与其卡合的凹部。
9、如权利要求1或2所述的发光二极体的封装结构，其特征在于：该散热基座为铝基板材质。
10、如权利要求1或2所述的发光二极体的封装结构，其特征在于：该散热基座为铜基板材质。
CNU2005201035540U 2005-08-10 2005-08-10 发光二极体的封装结构 Expired - Fee Related CN2845171Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009082864A1 (fr) * 2007-12-27 2009-07-09 Foshan Nationstar Optoelectronics Limited Liability Company Source lumineuse à led sous forme de barre
CN101207102B (zh) * 2006-12-20 2010-05-19 凯鼎科技股份有限公司 高功率二极管支架结构及封装组合
WO2013040725A1 (zh) * 2011-09-22 2013-03-28 景华光电科技股份有限公司 覆晶式发光二极管面光源光学引擎的封装方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101207102B (zh) * 2006-12-20 2010-05-19 凯鼎科技股份有限公司 高功率二极管支架结构及封装组合
WO2009082864A1 (fr) * 2007-12-27 2009-07-09 Foshan Nationstar Optoelectronics Limited Liability Company Source lumineuse à led sous forme de barre
WO2013040725A1 (zh) * 2011-09-22 2013-03-28 景华光电科技股份有限公司 覆晶式发光二极管面光源光学引擎的封装方法

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