CN1862818B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1862818B
CN1862818B CN2006100802402A CN200610080240A CN1862818B CN 1862818 B CN1862818 B CN 1862818B CN 2006100802402 A CN2006100802402 A CN 2006100802402A CN 200610080240 A CN200610080240 A CN 200610080240A CN 1862818 B CN1862818 B CN 1862818B
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China
Prior art keywords
film
electrode
dielectric film
semiconductor device
hole
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CN2006100802402A
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English (en)
Chinese (zh)
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CN1862818A (zh
Inventor
鸟居克裕
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Renesas Electronics Corp
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Renesas Technology Corp
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Publication of CN1862818A publication Critical patent/CN1862818A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN2006100802402A 2005-05-13 2006-05-12 半导体器件及其制造方法 Active CN1862818B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP141019/2005 2005-05-13
JP2005141019A JP4848137B2 (ja) 2005-05-13 2005-05-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN1862818A CN1862818A (zh) 2006-11-15
CN1862818B true CN1862818B (zh) 2010-06-02

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CN2006100802402A Active CN1862818B (zh) 2005-05-13 2006-05-12 半导体器件及其制造方法

Country Status (4)

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US (2) US7531419B2 (https=)
JP (1) JP4848137B2 (https=)
CN (1) CN1862818B (https=)
TW (1) TW200644166A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881488B1 (ko) * 2007-09-06 2009-02-05 주식회사 동부하이텍 Ｍｉｍ 캐패시터를 갖는 반도체 소자 및 그의 제조방법
US8242551B2 (en) * 2009-03-04 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal structure for system-on-chip technology
US8482048B2 (en) * 2009-07-31 2013-07-09 Alpha & Omega Semiconductor, Inc. Metal oxide semiconductor field effect transistor integrating a capacitor
JP5562631B2 (ja) 2009-12-25 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
CN103779181A (zh) * 2012-10-18 2014-05-07 中芯国际集成电路制造(上海)有限公司 一种mim电容器及其制造方法
US9577025B2 (en) * 2014-01-31 2017-02-21 Qualcomm Incorporated Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
KR102684619B1 (ko) * 2018-08-31 2024-07-11 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12191247B2 (en) * 2021-05-12 2025-01-07 Taiwan Semiconductor Manufacturing Company Limited Variable graduated capacitor structure and methods for forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997019468A1 (en) * 1995-11-20 1997-05-29 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
JP3843708B2 (ja) * 2000-07-14 2006-11-08 日本電気株式会社 半導体装置およびその製造方法ならびに薄膜コンデンサ
JP2003031684A (ja) * 2001-07-11 2003-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2003258107A (ja) * 2002-02-28 2003-09-12 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2004119461A (ja) 2002-09-24 2004-04-15 Seiko Epson Corp 半導体装置及びその製造方法
CN1241264C (zh) 2002-09-30 2006-02-08 松下电器产业株式会社 半导体装置及其制造方法
JP2004146814A (ja) * 2002-09-30 2004-05-20 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR100505658B1 (ko) * 2002-12-11 2005-08-03 삼성전자주식회사 ＭＩＭ(Ｍｅｔａｌ-Ｉｎｓｕｌａｔｏｒ-Ｍｅｔａｌ)커패시터를 갖는 반도체 소자
JP2004247520A (ja) 2003-02-14 2004-09-02 Matsushita Electric Ind Co Ltd 半導体装置
JP2004253481A (ja) 2003-02-18 2004-09-09 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4018615B2 (ja) * 2003-10-06 2007-12-05 株式会社東芝 半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same

Also Published As

Publication number Publication date
CN1862818A (zh) 2006-11-15
US8049263B2 (en) 2011-11-01
TWI379382B (https=) 2012-12-11
US20060255428A1 (en) 2006-11-16
TW200644166A (en) 2006-12-16
JP4848137B2 (ja) 2011-12-28
JP2006319174A (ja) 2006-11-24
US20090189250A1 (en) 2009-07-30
US7531419B2 (en) 2009-05-12

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