CN1862818A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1862818A CN1862818A CNA2006100802402A CN200610080240A CN1862818A CN 1862818 A CN1862818 A CN 1862818A CN A2006100802402 A CNA2006100802402 A CN A2006100802402A CN 200610080240 A CN200610080240 A CN 200610080240A CN 1862818 A CN1862818 A CN 1862818A
- Authority
- CN
- China
- Prior art keywords
- electrode
- film
- dielectric film
- semiconductor device
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims description 71
- 239000003990 capacitor Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000011229 interlayer Substances 0.000 abstract description 22
- 239000012212 insulator Substances 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 34
- 239000010410 layer Substances 0.000 description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000005498 polishing Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000003475 lamination Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- -1 shows the method Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP141019/2005 | 2005-05-13 | ||
JP2005141019A JP4848137B2 (ja) | 2005-05-13 | 2005-05-13 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1862818A true CN1862818A (zh) | 2006-11-15 |
CN1862818B CN1862818B (zh) | 2010-06-02 |
Family
ID=37390194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100802402A Active CN1862818B (zh) | 2005-05-13 | 2006-05-12 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7531419B2 (zh) |
JP (1) | JP4848137B2 (zh) |
CN (1) | CN1862818B (zh) |
TW (1) | TW200644166A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103779181A (zh) * | 2012-10-18 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 一种mim电容器及其制造方法 |
CN110875275A (zh) * | 2018-08-31 | 2020-03-10 | 三星电子株式会社 | 半导体器件 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100881488B1 (ko) * | 2007-09-06 | 2009-02-05 | 주식회사 동부하이텍 | Mim 캐패시터를 갖는 반도체 소자 및 그의 제조방법 |
US8242551B2 (en) * | 2009-03-04 | 2012-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal structure for system-on-chip technology |
US8482048B2 (en) * | 2009-07-31 | 2013-07-09 | Alpha & Omega Semiconductor, Inc. | Metal oxide semiconductor field effect transistor integrating a capacitor |
JP5562631B2 (ja) * | 2009-12-25 | 2014-07-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9577025B2 (en) * | 2014-01-31 | 2017-02-21 | Qualcomm Incorporated | Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device |
US20220367340A1 (en) * | 2021-05-12 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company Limited | Variable graduated capacitor structure and methods for forming the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997019468A1 (fr) * | 1995-11-20 | 1997-05-29 | Hitachi, Ltd. | Dispositif de stockage a semi-conducteur, et processus de fabrication de ce dispositif |
US6180976B1 (en) * | 1999-02-02 | 2001-01-30 | Conexant Systems, Inc. | Thin-film capacitors and methods for forming the same |
JP3843708B2 (ja) * | 2000-07-14 | 2006-11-08 | 日本電気株式会社 | 半導体装置およびその製造方法ならびに薄膜コンデンサ |
JP2003031684A (ja) * | 2001-07-11 | 2003-01-31 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2003258107A (ja) * | 2002-02-28 | 2003-09-12 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2004119461A (ja) | 2002-09-24 | 2004-04-15 | Seiko Epson Corp | 半導体装置及びその製造方法 |
CN1241264C (zh) * | 2002-09-30 | 2006-02-08 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
JP2004146814A (ja) * | 2002-09-30 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
KR100505658B1 (ko) * | 2002-12-11 | 2005-08-03 | 삼성전자주식회사 | MIM(Metal-Insulator-Metal)커패시터를 갖는 반도체 소자 |
JP2004247520A (ja) | 2003-02-14 | 2004-09-02 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2004253481A (ja) | 2003-02-18 | 2004-09-09 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP4018615B2 (ja) * | 2003-10-06 | 2007-12-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2005
- 2005-05-13 JP JP2005141019A patent/JP4848137B2/ja active Active
-
2006
- 2006-04-28 TW TW095115418A patent/TW200644166A/zh unknown
- 2006-05-12 US US11/432,516 patent/US7531419B2/en not_active Expired - Fee Related
- 2006-05-12 CN CN2006100802402A patent/CN1862818B/zh active Active
-
2009
- 2009-04-06 US US12/419,088 patent/US8049263B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103779181A (zh) * | 2012-10-18 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 一种mim电容器及其制造方法 |
CN110875275A (zh) * | 2018-08-31 | 2020-03-10 | 三星电子株式会社 | 半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
US8049263B2 (en) | 2011-11-01 |
JP4848137B2 (ja) | 2011-12-28 |
TW200644166A (en) | 2006-12-16 |
US20060255428A1 (en) | 2006-11-16 |
CN1862818B (zh) | 2010-06-02 |
US20090189250A1 (en) | 2009-07-30 |
TWI379382B (zh) | 2012-12-11 |
JP2006319174A (ja) | 2006-11-24 |
US7531419B2 (en) | 2009-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100909 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO TO, JAPAN TO: KANAGAWA, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100909 Address after: Kanagawa Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Renesas Technology Corp. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa Patentee before: Renesas Electronics Corporation |
|
CP02 | Change in the address of a patent holder |