TW200644166A - Semiconductor device and a method of manufacturing the same - Google Patents

Semiconductor device and a method of manufacturing the same

Info

Publication number
TW200644166A
TW200644166A TW095115418A TW95115418A TW200644166A TW 200644166 A TW200644166 A TW 200644166A TW 095115418 A TW095115418 A TW 095115418A TW 95115418 A TW95115418 A TW 95115418A TW 200644166 A TW200644166 A TW 200644166A
Authority
TW
Taiwan
Prior art keywords
dielectric film
lower electrode
electrode
manufacturing
same
Prior art date
Application number
TW095115418A
Other languages
English (en)
Chinese (zh)
Other versions
TWI379382B (https=
Inventor
Katsuhiro Torii
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200644166A publication Critical patent/TW200644166A/zh
Application granted granted Critical
Publication of TWI379382B publication Critical patent/TWI379382B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW095115418A 2005-05-13 2006-04-28 Semiconductor device and a method of manufacturing the same TW200644166A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005141019A JP4848137B2 (ja) 2005-05-13 2005-05-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200644166A true TW200644166A (en) 2006-12-16
TWI379382B TWI379382B (https=) 2012-12-11

Family

ID=37390194

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095115418A TW200644166A (en) 2005-05-13 2006-04-28 Semiconductor device and a method of manufacturing the same

Country Status (4)

Country Link
US (2) US7531419B2 (https=)
JP (1) JP4848137B2 (https=)
CN (1) CN1862818B (https=)
TW (1) TW200644166A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881488B1 (ko) * 2007-09-06 2009-02-05 주식회사 동부하이텍 Ｍｉｍ 캐패시터를 갖는 반도체 소자 및 그의 제조방법
US8242551B2 (en) * 2009-03-04 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal structure for system-on-chip technology
US8482048B2 (en) * 2009-07-31 2013-07-09 Alpha & Omega Semiconductor, Inc. Metal oxide semiconductor field effect transistor integrating a capacitor
JP5562631B2 (ja) 2009-12-25 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
CN103779181A (zh) * 2012-10-18 2014-05-07 中芯国际集成电路制造(上海)有限公司 一种mim电容器及其制造方法
US9577025B2 (en) * 2014-01-31 2017-02-21 Qualcomm Incorporated Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
KR102684619B1 (ko) * 2018-08-31 2024-07-11 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12191247B2 (en) * 2021-05-12 2025-01-07 Taiwan Semiconductor Manufacturing Company Limited Variable graduated capacitor structure and methods for forming the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997019468A1 (en) * 1995-11-20 1997-05-29 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
JP3843708B2 (ja) * 2000-07-14 2006-11-08 日本電気株式会社 半導体装置およびその製造方法ならびに薄膜コンデンサ
JP2003031684A (ja) * 2001-07-11 2003-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2003258107A (ja) * 2002-02-28 2003-09-12 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2004119461A (ja) 2002-09-24 2004-04-15 Seiko Epson Corp 半導体装置及びその製造方法
CN1241264C (zh) 2002-09-30 2006-02-08 松下电器产业株式会社 半导体装置及其制造方法
JP2004146814A (ja) * 2002-09-30 2004-05-20 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR100505658B1 (ko) * 2002-12-11 2005-08-03 삼성전자주식회사 ＭＩＭ(Ｍｅｔａｌ-Ｉｎｓｕｌａｔｏｒ-Ｍｅｔａｌ)커패시터를 갖는 반도체 소자
JP2004247520A (ja) 2003-02-14 2004-09-02 Matsushita Electric Ind Co Ltd 半導体装置
JP2004253481A (ja) 2003-02-18 2004-09-09 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4018615B2 (ja) * 2003-10-06 2007-12-05 株式会社東芝 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN1862818A (zh) 2006-11-15
US8049263B2 (en) 2011-11-01
TWI379382B (https=) 2012-12-11
US20060255428A1 (en) 2006-11-16
JP4848137B2 (ja) 2011-12-28
JP2006319174A (ja) 2006-11-24
CN1862818B (zh) 2010-06-02
US20090189250A1 (en) 2009-07-30
US7531419B2 (en) 2009-05-12

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