CN1849180B - 沉积和构图方法 - Google Patents
沉积和构图方法 Download PDFInfo
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- CN1849180B CN1849180B CN2004800257956A CN200480025795A CN1849180B CN 1849180 B CN1849180 B CN 1849180B CN 2004800257956 A CN2004800257956 A CN 2004800257956A CN 200480025795 A CN200480025795 A CN 200480025795A CN 1849180 B CN1849180 B CN 1849180B
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- solder metal
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
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Abstract
一种通过动电或静电方法,直接地或通过使用中间工具,对衬底以图形施加颗粒的方法。一种通过动电或静电方法,直接地或通过使用中间工具,对电子器件衬底以图形施加例如焊料金属的金属颗粒的方法。
Description
技术领域
本发明涉及一种通过在衬底上沉积粉末、颗粒、球体或者其它材料制造构图部分的方法。
背景技术
在各种应用中,希望以预先确定的图形将颗粒施加到衬底。一种这样的应用是在硅晶片上形成焊料合金的图形。适当形成希望的图形需要的精度使常规粉末施加方法不足以胜任。典型的硅晶片衬底可以具有较高密度的连接点,该连接点呈现为例如焊盘或者凸起下金属(UBM)的暴露金属,其直径为例如约100微米且以约250微米的间距间隔。
美国专利No.5,817,374公开了一种用于构图粉末的方法,该方法使用多个颗粒、掩膜以及介电接收器。介电接收部分接收吸引颗粒的临时电荷,以使颗粒穿过掩膜并以由掩膜限定的图形粘附到接收器。
另外,确保以希望的图形沉积颗粒而无不规则或杂散颗粒分布很重要。许多沉积方法导致所谓的“边缘效应”,即在金属的边缘周围存在过沉积金属颗粒的非均匀带。希望降低沉积期间的边缘效应,以在最终的产品中提供均匀性。
混合电子元件衬底允许通过单个衬底实现各种功能,但是它们需要变化的适合分立元件的焊料凸起厚度。利用常规的模版印刷方法制造具有变化的厚度的衬底是繁重的工艺,因为这需要在每次沉积后必须被清洗的专用模板。因此,希望发展一种制造在其上具有可控焊料凸起厚度的衬底的单步骤方法。
发明内容
本发明的多个方面之一是提供一种在衬底上以图形沉积颗粒的方法和装置。
因此,简短地说,本发明旨在一种对具有掩蔽表面和未掩蔽表面的衬底施加颗粒图形的方法。该方法包括对所述衬底的至少一些所述掩蔽表面施加静电电荷,以产生电荷保持(charge-holding)掩蔽表面;以及将其上具有所述电荷保持掩蔽表面的所述衬底暴露于在液体介质中的所述颗粒,在所述液体介质中所述颗粒可移动,所述颗粒具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的电学电荷,从而在所述衬底的所述未掩蔽表面上静电沉积所述颗粒。
本发明的另一方面是一种方法,包括将衬底浸入包括颗粒的动电溶液中,其中所述衬底的未掩蔽部分构成电极;将反电极浸入所述动电溶液中;以及将所述电极和反电极连接到电压源的相反电极,以在所述反电极和所述电极之间建立电学电势,从而在构成所述电极的所述衬底的所述未掩蔽部分上动电沉积所述颗粒。
在又一个实施例中,本发明提供了一种方法,即通过对包括由导电区和不导电区限定的图形的构图工具表面的不导电区施加静电电荷,以产生带电的构图工具表面,从而对衬底施加颗粒图形;将所述带电的构图工具表面暴露于在介电液体中的颗粒,所述颗粒具有电化学电荷,从而使一些所述颗粒粘附到在所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的颗粒的构图工具表面;以及将具有附着到其上的颗粒的所述构图工具表面贴近地暴露于衬底的表面,从而以由在所述构图工具表面上的图形限定的衬底图形,将至少部分所述一些颗粒从所述构图工具表面转移到所述衬底的所述表面。
本发明还包括一种对衬底施加颗粒图形的方法,包括对包括由导电区和不导电区限定的图形的构图工具表面上的导电区施加电学电势;将所述构图工具表面暴露于在介电液体中的颗粒,所述颗粒具有电化学电荷,从而使一些所述颗粒粘附到被施加所述电学电势的所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的颗粒的构图工具表面;以及将具有粘附到其上的颗粒的所述构图工具表面贴近地暴露于衬底的表面,从而以由在所述构图工具表面上的图形限定的衬底图形,将至少部分所述一些颗粒从所述构图工具表面转移到所述衬底的所述表面。
本发明还旨在在所述衬底为电子器件衬底的情况下,在所述衬底为具有凸起下金属的电子器件的情况下,以及在所述颗粒为焊料金属颗粒的情况下的各上述方法。
下文将部分示出并部分说明本发明的其它方面和特征。
附图说明
图1A、1B以及1C是根据本发明的方法制备的焊料凸起的显微照片;
图2-7是示意图,示出了根据本发明对其施加颗粒的衬底的制备;
图8-16是示意图,示出了根据本发明的基于静电的颗粒沉积;
图17是示意图,示出了根据本发明的基于动电的颗粒沉积;
图18-19是示意图,示出了根据本发明的印刷工具的使用;
图20是根据本发明在衬底上沉积的焊料颗粒的显微照片;以及
图21-24是晶片照片,示出了申请人的用于解决边缘效应的方法。
具体实施方式
本发明包括在衬底上以图形对颗粒的选择性沉积。一种应用是在例如硅晶片衬底的电子器件衬底上的金属互连部分上沉积焊料颗粒,以在衬底互连部分和连接到衬底上的器件之间提供电学互连。这里,在电子器件衬底上的焊料金属颗粒的情况下说明了本发明,其中以图形沉积并回流所述颗粒,以产生例如图1所示的中间衬底。本发明包括多种颗粒沉积环境。作为焊料金属的颗粒的性质和作为电子器件衬底的衬底的性质对本发明的适用性不很关键。
在本发明的第一个方面中,以静电模式沉积颗粒。在第二个方面中,以动电模式沉积颗粒。沉积的颗粒的尺寸范围从微米大小的粉末到中等大小的颗粒,到直径为几百微米量级至直径为1毫米的球体。
基于静电的沉积
为概述本发明的基于静电的沉积方面,利用电荷保持(charge-holding)掩膜构图衬底。利用电晕放电使电荷保持掩膜带电。将液体调色剂中的带电颗粒转移到衬底上的特定位置。掩膜上的电荷与颗粒上的电荷同号(+/-)。颗粒从具有与颗粒相同的电荷的区域,即掩膜排斥。衬底用作电极,并保持在这样的电势,当与带电掩膜并置时,该电势吸引颗粒。在许多实施例中,该电势构成地电势。以这种方式实现图形限定和对比。
关于具体工艺,第一个步骤是制备衬底。在本发明的一个应用中,该工艺的目的是得到图1的产品,该产品是在其上具有分立焊料凸起的电子器件衬底。在该实施例中,衬底10是由三个金属化层覆盖的硅晶片衬底。具体地说,如图2中的示意性截面图所示,在硅晶片12上直接沉积铝籽晶层14,然后沉积镍钒层16,以及最后沉积铜层18。Al籽晶层14的厚度约为0.1微米,例如,在约500与约2000埃之间。NiV层16的厚度约为500埃,例如,在约100与约1000埃之间。Cu层18的厚度约为1微米,例如,在约0.5微米与约5微米之间。这是一种示例性的UBM配置,其并非在工业中采用的唯一配置;并且该排列本身对本发明不很关键。
下一步骤是在衬底上限定掩膜图形,该步骤有助于在特定位置中去除UBM直到底层Al,并保护其它位置的UBM不受该去除作用的影响。为此,用包括感光剂的不导电涂层覆盖衬底10。该涂层选自基于丙烯酸、基于聚酰亚胺、商业可得的基于环氧的PWB焊料掩膜涂层,以及各种商业可得的有机感光光敏聚合物涂层。一种适合的聚合物是从Clariant 0fBridgewater,New Jersey可得的,商品名为AZPDP100XT或者基于酚醛(novalac)的AZPLP100可得的厚膜旋涂光敏聚合物。另一种是商品名为Futurrex可得的基于聚苯乙烯的材料。根据接收焊料颗粒的互连部分的尺寸,对于硅晶片的焊料凸起,该涂层的厚度为约1微米与约250微米之间。
在例如箱形炉中,对衬底进行软固化。在未完全固化但具有足够的强度以允许小心处理衬底而不损失聚合物的情况下,对衬底上的聚合物进行软固化。然后,为了光固化聚合物,在衬底上方对准固体掩膜。掩膜上的图形允许紫外(UV)光在特定位置穿过掩膜以固化聚合物,并阻挡UV光在其它位置穿过掩膜以防止固化。具体地说,掩膜在衬底上存在将要接收焊料颗粒的互连部分的位置上阻挡UV光。掩膜允许UV光在其它位置穿过到达衬底。在对准掩膜后,将衬底10暴露于穿过掩膜版的UV光中,以通过聚合物的交联固化聚合物。在光固化后,去除掩膜,并从聚合物未通过光固化交联的区域洗掉聚合物。然后通过,例如,在约110℃与约150℃之间烘炉固化约30分钟或更长,进一步交联聚合物。尽管前面说明了固化负光致抗蚀剂材料的光作用,可选的实施例采用正光致抗蚀剂材料。上述操作得到了如图3所示的衬底表面,在其上具有Al 14、NiV 16以及Cu 18的连续层,并且在这些层上具有构图的掩膜20。
构图的掩膜20有助于在特定位置去除UBM直到底层Al,并保护其它位置的UBM不受该去除作用的影响。具体地说,随后利用化学对衬底10进行湿法蚀刻工艺,该工艺蚀刻去除Cu和NiV,或其它UBM,使Al暴露。掩膜保护表面的其它区域。如图4所示,该操作产生具有周期上覆掩膜的岛的暴露的Al表面14。各岛由NiV层16、Cu层18、以及保护性顶掩膜层20构成。然后,根据聚合物供应商的具体说明,去除各岛的顶掩膜层20,以产生包括原始Al表面层14的在其上具有NiV 16和Cu 18的岛的衬底,如图5所示。
然后,在该衬底上形成另一掩膜,以为在UBM岛上沉积金属颗粒提供导向物。通过已知技术,例如通过顺序地a)旋涂涂覆、b)穿过模板UV曝光,以及c)去除未交联的掩膜前体,施加该掩膜。该掩膜设计为:其各开口大于各对应的UBM岛。该掩膜也设计成具有这样的高度,该高度允许将要沉积的焊料体积足以在回流时形成特定尺寸的焊料凸起。这产生了包括连续的Al层14和被掩膜材料24环绕的UBM岛16/18的衬底12,其中一些Al在各岛周围暴露,如图6和7所示。在最后回流期间,在各UBM岛周围暴露的Al确保在其上沉积的颗粒(如下所述)被驱赶到UBM上,因为与UBM相比,Al不润湿。
为了利用稀释剂填充孔及防止空气气泡形成,利用包括在例如Isopar的介电液体中的电荷导向物的溶液预润湿衬底。通过浸入、浸入加超声活化、喷涂,或者超声喷涂实现该预润湿。
然后,对衬底进行颗粒沉积操作。具有例如5至7千伏电势的电晕发生器从在衬底上的聚合物覆层的附近通过,以将电晕电荷赋予聚合物掩膜表面。以这种方式,该方法包括对衬底的至少一些掩蔽表面施加静电电荷,以产生电荷保持掩蔽表面。
如图8示意性所示,在一个实施例中,将衬底10浸入具有在如这里所述的例如Fluorinert或Isopar的有机媒介物中金属颗粒32的浆料30中,通过空气、搅动棒、叶轮等搅动该有机媒介物。该衬底与图6的衬底相同,但在图8中该衬底被进一步示意性简化。优选在浆料中的衬底为垂直方向,因为这有利于在颗粒沉积后对衬底的清洗。以这种方式,将其上具有电荷保持掩蔽表面的衬底暴露于液体介质中的颗粒,其中颗粒可移动,该颗粒具有与电荷保持的掩蔽表面上的电荷的极性相同的电学电荷,从而在衬底的未掩蔽表面上静电沉积颗粒。
用夹盘(未示出)保护衬底,并电连接金属以使其保持在吸引颗粒的电势。该电势可以是正的、负的、或者零(接地)。其绝对值(正的、负的、或者零)不如其相对值重要。其相对于颗粒上的电荷和掩膜上的电荷的值是这样的值:颗粒优选在金属上而不在掩膜上沉积。例如,如果在颗粒32上的电荷是正的且在掩膜24上的电晕电荷是正的,可以将衬底金属接地或者可以施加负电势。如果施加正或者负电势,Al被视为电驱动底板。
搅动包覆的颗粒32被吸引到在聚合物掩膜累积物24之间的孔中和UBM 18之上,从而得到与互连部分接触的包覆金属颗粒的焊料颗粒沉积。具体地说,包覆颗粒从电晕带电覆层被排斥,并且被吸引到保持在地或吸引颗粒的电势的区域。这种吸引是有利的,因为预先用电极性材料包覆颗粒,以在其上产生化学电荷。然后,优选将该化学电荷吸引到UBM金属包覆18,即互连部分,而不是吸引到带有相同电荷的掩膜24。根据其预处理包覆在功能上是酸性的或碱性的,在颗粒上的化学电荷是正的或负的。沿着由在凸出的聚合物覆层24上的电学电荷产生的电场线,将颗粒向下导入在掩膜中的孔。在UBM 18上沉积颗粒。
在停留适当的时间后,垂直地或者以不平行于溶液上表面的某个角度取出衬底。在一个优选实施例中,在取出期间,衬底与垂直方向成约15至约75度之间的角度。
除了将衬底完全浸入浆料,另一种可选方法是通过使金属颗粒溶液流过衬底顶部,实现将衬底暴露于溶液。在一个实施例中,这可以通过将衬底置于金属颗粒溶液的容器的附近来实现。优选相对于溶液倾斜衬底,以便于溶液流过和离开衬底。在一个实施例中,衬底相对于垂直方向成约30至约60度之间的角度。存在从容器引出的管道(conduit),通过该管道溶液流动到衬底上,并随后流过衬底。
在本发明的各不同实施例中,优选在容器底部具有搅动螺旋桨,以利于颗粒维持悬浮状态。在一个实施例中,螺旋桨以反时针方向旋转约5秒,然后以顺时针方向反向旋转约5秒。连续重复该过程,以提供持续搅动。在该实施例中,旋转速度为约每分钟750转。
已经发现,在颗粒沉积操作期间,在特定情况下,衬底的振动很有利。在一个实施例中,在沉积的各分立阶段结束时振动衬底。例如,如果衬底经历三个颗粒沉积阶段,在各颗粒沉积阶段结束时振动衬底。通过合适的源例如机械源、磁源或者压电源提供振动能量。通过衬底夹盘将机械振动能量传送到衬底。如果采用磁或压电力,通过换能器将它们传送到衬底。已经发现,该振动作用有助于在金属上更密集地沉积颗粒而无夹断或空隙。振动阶段的持续时间从约1秒至几秒不等。振动的振幅约为几微米。在一个实施例中,振幅在约1至约10微米的范围内。振动的频率约为千赫兹。在一个实施例中,频率在约5至20kHz的范围内。在一个实施例中,振动能量在约0.1至约10瓦的范围内。不限于特定理论,认为振动削弱或克服了在一列颗粒之间的静电电荷。另一个理论是振动削弱或克服了在一列颗粒之间的摩擦力。
在本发明的可选实施例中,颗粒沉积阶段可以包括以逐步的方式沉积颗粒,以得到无夹断或空隙的更密集的沉积。具体地说,该阶段包括采用较低的电晕电荷的第一沉积,采用较中等的电晕电荷的第二沉积,以及采用较高的电晕电荷的第三沉积。例如,第一沉积将约100至约500V范围内的电晕电荷赋予掩膜;第二沉积采用约200至约700V范围内的电晕电荷;以及第三沉积采用约500至约1000V范围内的电晕电荷。这三个重复过程可以大致对应于三个沉积阶段,包括a)填充凹槽的底部;b)填充凹槽直至其顶部,即使具有不导电层的顶部;以及c)在已沉积颗粒上面进行过填充。其它实施例采用重复次数为除了3以外从2至几次不等的振动。看来,该逐步沉积有利于密集沉积并减少空隙和夹断。因此,以这种方式,本发明包括,在将衬底暴露于颗粒后,重复施加电荷的步骤以在掩蔽表面上再次产生电荷,以及重复将衬底暴露于颗粒的步骤以在衬底的未掩蔽表面上的颗粒上沉积其它颗粒。
不限于特定理论,相信在衬底的最底部分上早期沉积金属颗粒期间,与较强电场相比,较弱的电场导致较少的颗粒被吸引到金属,减少了在短时间内聚集太多颗粒到该部分中的机会。如果最初电场较强,颗粒可以侵略性地聚集到该部分中并夹断通向金属的凹槽开口,或者导致过多的空隙。较弱的电场较低侵略性地移动颗粒,所以颗粒可以紧压到金属上,而没有迫使大量颗粒同时进入不导电层中的凹槽。通过类推,如果不是同时都进门,则更多的乘客可以进入列车车厢,因为如果在门处过度拥挤,入口可被夹断。
在又一可选实施例中,存在2至几之间例如3次的多次重复,并且各重复包括相似量级的电晕电荷。利用各重复赋予新的电晕电荷的目的是,补偿由于在沉积期间电荷的消耗造成的电晕电荷的损耗。具体地说,溶液的电导率导致一些电荷逐渐消耗。在一个实例中,通过在沉积之前或在沉积期间的间隔时三次独立的重复过程中赋予约800伏的电晕电荷。
沉积后,可选地通过将衬底短暂地浸入清洗溶液中冲洗衬底,其中掩膜开口包括面朝下的沉积颗粒。这也可以通过在与沉积相同的容器中通过原位冲洗实现,包括同时去除浆料和以无颗粒的稀释剂替换。
在衬底的金属化层上沉积焊料颗粒后,以及当使用完全浸入实施例时从浆料中取出衬底后,通过将衬底暴露于高温,干燥去除残余的溶剂。根据在浆料中的溶剂的性质,典型地,该温度在30℃至60℃的范围内。这产生了在其上具有焊料颗粒30的衬底,如图9所示。图10示出了沉积颗粒是中等尺寸的焊料颗粒28而不是图9的较小的粉末颗粒30的衬底。以及图11示出了沉积物是焊料球体26而不是粉末30或颗粒28的衬底。
然后,通过将焊料置于例如标准的多区焊料回流炉中或者优选置于低氧(<100ppm,更优选<20ppm)的回流炉中,回流焊料。优选从下面加热衬底。回流期间,在金属颗粒上的涂层起焊剂的作用。也可以使用例如具有喷涂于其上的液体焊剂的辅助焊剂辅助回流。
根据具体厂商对掩膜材料的说明,例如通过在碱性溶液中溶解,去除掩膜。这产生了在其上具有焊料凸起34的衬底,如图12以及图1的照片示意性所示。
在本发明的范围内的可选沉积工艺采用仅仅一个掩膜而不是如上述方法中的两个掩膜。在该实施例中,采用平均直径为至少约100微米的例如在约100微米和约1mm之间的金属焊料球体,而不是较小的颗粒或粉末。通过常规光刻技术,在由晶片衬底42上面的金属层44、46、48以及50构成的未构图连续UBM的上面形成掩膜52,如图13所示。利用如上所述的本发明的方法,通过掩膜开口在暴露的UBM上静电沉积金属球体54。沉积物为固体球体的性质有利于其在开口中的定位,尽管开口窄于球体高度。沉积的球体保持在适当的位置,就象鸡蛋在鸡蛋杯中,或者象高尔夫球在高尔夫球座上。随后,回流球体,并去除掩膜52以产生图15中的焊料凸起54。其后,通过常规溶解和/或湿法蚀刻技术去除除了在回流颗粒下的UBM材料外的UBM材料层,以产生图16所示的衬底。
本发明的上述方法适于沉积宽尺寸范围的金属颗粒。在一种方法中,颗粒是粉末,典型地具有在约2至约100微米之间的平均颗粒尺寸。在另一种方法中,它们是中等尺寸的颗粒,例如具有在约50至约500微米之间的平均颗粒尺寸。在另一种方法里,它们是较大的球体,例如具有至少约100微米,例如在约100微米至约1毫米之间的平均直径。与约50%密集的粉末相比,球体的一个优点在于它们是100%密集的。并且,可以以比粉末体积更细的间距沉积球体,因为球体比相同体积的粉末限定得更好,并且因为在回流后可以使用较小的球体产生与较大体积的粉末相同量的焊料。球体也有利于上述的单个掩膜技术,其中掩膜孔窄于沉积物的高度。
基于动电的沉积
为概述本发明的这个方面,与上述基于静电的方法类似,将衬底利用掩膜构图并且浸入将要沉积的颗粒的悬浮液中。然而,在动电模式下,衬底用作电极,并且存在邻近衬底的浸没的反电极。在两个电极之间施加电势,以将带电颗粒驱动到衬底。设计悬浮特性,以提供适当的液相电导率及颗粒的电荷与质量比率。因为颗粒被吸引到在衬底上的电势而不被吸引到掩膜,得到图像对比。由于电荷载体穿过电解液迁移到掩膜材料,电荷在掩膜上聚集。
在基于动电的沉积中的具体步骤在许多方面与基于静电的沉积相同,其中一个不同之处在于,在静电模式下沉积的主要驱动力是带电颗粒排斥远离在掩膜上的电荷相反的电晕电荷,但在动电模式下驱动力是将带电颗粒吸引到对衬底施加电势的相反电荷电极与排斥离开掩膜的结合,其中该掩膜接收与颗粒同号的感应电荷。将在动电模式下的衬底连接到电连接,以在金属和反电极之间施加电学电势。将衬底浸入颗粒浆料(动电溶液)中,其中衬底的未掩蔽部分构成电极。将反电极也浸入浆料中,以完成电路。优选与浆料的上表面垂直的衬底方向。
在颗粒被处理为具有负化学电荷的情况下,在金属和反电极之间施加电学电势,其中金属作为正电极。可选地,在颗粒被处理为具有正电荷的情况下,将电学电势赋予金属,其中金属作为负电极。图17示意性示出了在其上施加电学电势的浸没的衬底60和反电极61。例如,将电路的负接线端连接到浆料中的反电极板上并将正接线端连接到金属上。或者将电路的正接线端连接到浆料中的反电极板上并将负接线端连接到金属上。
将浆料中的带电颗粒吸引到金属,该金属设置为与在颗粒上的电荷极性相反的接线端。带电颗粒移动穿过由在衬底金属和反电极之间的电学电势产生的电场。利用连接到电源的相反电极的在其间建立电学电势的电极和反电极,在构成电极的衬底的未掩蔽部分上动电沉积颗粒。在该实施例中,不需要对掩膜施加电晕电荷。掩膜用作机械及静电阻挡层。由于载体流动穿过形成将带电颗粒电驱入掩膜的孔中的电场的电解液,静电电荷在掩膜上聚集。
该方法包括利用AC电势为例如50+/-50V至500+/-500V的单个沉积步骤。一个可选实施例包括改变在金属和反电极之间施加的电学电势以形成沉积。在一个实施例中,这包括在所有的或者少于所有的沉积期间慢慢地向上扫描或者斜升电压。在另一个实施例中,这包括以更逐步的方式增加电势。例如,其包括在约50+/-50V至约500+/-500V之间的电势下实现第一阶段的沉积;以及在约200+/-200V至约300+/-300V之间的电势下实现第二和第三阶段的沉积。这三个重复过程大致对应于三个沉积阶段,包括a)填充凹槽的底部;b)填充凹槽直至其顶部,即使具有不导电层的顶部;以及c)在已沉积颗粒上面进行过填充。其它实施例采用重复次数除了3以外从2至几次不等的重复。看来该逐步沉积提供了更密集的沉积以及较少的空隙或者夹断,因为掩膜孔的填充更有序。
关于沉积工艺的其它参数,施加正弦波的或者更优选施加锯齿波的电势。频率在约10至约1000Hz之间,优选在约50至500Hz之间,更优选在约75至150Hz之间。沉积的时间周期在约2至约30秒的范围内,例如在约5至约20秒的范围内,或者对一个特定实施例在约8至约15秒的范围内。在一个实施例中,衬底和反电极之间的距离在约5至约6mm之间。作为一个一般建议,该距离在约3至约10mm之间,最典型地在约4至约7mm之间。
不限于特定理论,相信在衬底的最底部分上早期沉积金属颗粒期间,于较强的电学电势相比,较弱的电学电势导致较少的颗粒被吸引到金属,减少了在短时间内在该部分中聚集太多颗粒的机会。如果最初电学电势较强,颗粒可以侵略性地聚集到该部分中并夹断通向金属的凹槽开口,或者导致过多的空隙。最初较弱的电学电势较低侵略性地移动颗粒,所以颗粒可以紧压到金属上,而没迫使大量颗粒同时进入不导电层中的凹槽。
在停留适当的时间后,垂直地或以不平行于溶液上表面的某个角度移动衬底。在一个优选实施例中,在移动期间,衬底与垂直方向成约15至约75度之间的角度。还发现,与静电模式结合的如上所述的衬底的振动与动电模式结合很有利。
沉积后,可选地通过短暂地浸入清洗溶液中冲洗衬底,其中掩膜开口包括面朝下的沉积颗粒。这也可以通过在与沉积相同的容器中通过原位冲洗实现,包括同时去除浆料和以无颗粒稀释剂替换。
然后,可选地对衬底进行电晕电荷处理,以在沉积的颗粒上提供静电夹具。具体地说,使电势为例如5至7千伏的电晕发生器从衬底上方穿过,以赋予电晕电荷。因为施加到掩膜上的静电力,这有助于将颗粒夹持在适当的位置。
通过将衬底暴露于高温,干燥去除残余的溶剂,根据在浆料中的溶剂的性质,典型地,该温度在30℃至60℃的范围内。这产生了在其上具有焊料粉末颗粒的如图9所示的类型的衬底。
然后,通过将焊料置于例如标准的多区焊料回流炉中或者优选置于低氧(<100ppm,更优选<20ppm)的回流炉中,回流焊料。优选从下面加热衬底。回流期间,在金属颗粒上的包覆起焊剂的作用。也可以使用例如具有喷涂于其上的液体焊剂的辅助焊剂辅助回流。
根据具体厂商对掩膜材料的说明,例如通过在碱性溶液中溶解,去除掩膜。这产生了在其上具有焊料凸起的衬底,如图12以及如图1的照片示意性所示。
利用印刷工具间接静电沉积
在本发明的进一步变化中,使用限定图形的独立的印刷工具,其中以该图形将颗粒转移到衬底。该印刷工具是具有平面的绝缘支架(support),在该平面上具有导电层。示例性的印刷工具由例如聚酰亚胺和环氧树脂的材料构成,其厚度为约1至约200微米之间,并且工具表面尺寸的直径从约1cm至约100cm不等。在一个优选实施例中,导电基层是通过在玻璃或PET膜上溅射涂覆而沉积的氧化铟锡。其它导电基层可以是,例如Al、Ti、Pt、TiW、Au、Ni或Cu。除溅射涂覆外,可以通过电解、无电或其它金属化技术沉积基层。
通过用包括负或正的感光剂的不导电涂层过涂覆导电层,在工具的平面上形成图形。该涂层选自基于丙烯酸的干膜、感光聚酰亚胺、商业可得的PWB焊料掩膜涂层,以及各种商业可得的有机感光光敏聚合物涂层。一种适合的聚合物是从Clariant of Bridgewater,New Jersey可得的,商品名为AZPDP100XT或者基于酚醛的AZPLP-100可得的厚膜旋涂光敏聚合物。另一种材料是从MCC of Newton,Massachusetts可得的基于环氧的SU-8。另一种是商品名为Futurrex可得的基于聚苯乙烯的材料。将光敏涂层暴露于UV光并显影,以在印刷工具上提供不导电图形。
通过使具有约为6000VDC(+/-200)的电荷的电晕发生器或者金属丝紧密地接近工具的平面通过,使在印刷工具上的不导电图形电晕带电。以这种方式,本发明包括对构图工具表面的不导电区施加静电电荷,该构图工具表面包括由导电区和不导电区限定的图形,这产生了带电的构图工具表面。将工具衬底连接到地电势以使工具上的导电层接地。具有电容性带电图形的工具70暴露于颗粒和液体混合物(图18)。工具上充斥着颗粒和液体混合物,以致颗粒占据在工具的部分上,在该部分上暴露接地的导电基层,该部分与用带有由电晕发生器赋予的电容性电荷的不导电聚合物掩蔽的导电基层部分相反。沿着由在不导电图形上的电晕电荷产生的电场线,将颗粒向下导入在不导电图形中的孔中。以这种方式,将带电的构图工具表面暴露于介电液体中的具有电化学电荷的颗粒,从而使一些颗粒粘附到在构图工具表面上的导电区,并从而产生具有粘附到导电区的颗粒的构图工具表面。通过施加纯介电液体媒介物,从工具冲洗掉任何松散的颗粒。在处理平均直径至少为约100微米,例如在约100微米至约1mm之间的金属球体时,该方法尤其成功。
通过利用介电液体预润湿,制备硅晶片或者其它衬底。衬底连接到完全接地的支架。
颗粒从工具到衬底的转移包括将具有粘附到其上的颗粒的构图工具表面暴露于衬底的表面,从而将至少部分所述一些颗粒从构图工具表面以由构图工具表面上的图形限定的衬底图形转移到衬底的表面。具体地说,在一个实施例中为了实现这个目的,将保持在与带电掩膜的电压接近的电压的带电且已冲洗工具置于将要构图的衬底表面上,其中隔离衬底与工具表面的间隙为20至约300微米之间(图19)。现在将衬底上的电压切换为接近零伏;由于衬底的电荷电势低于工具,颗粒转移到衬底,并保持与在工具表面上限定的图形相同的图形。
然后从衬底蒸发介电液体。通过常规焊料回流技术,包括例如在烘炉中烘焙衬底以将衬底和焊料加热到回流温度,将焊料熔化并熔合到衬底。
利用印刷工具间接动电沉积
该模式与静电模式的不同之处在于,对工具上的导电层施加正或负电势的电学电势,这将分别吸引负或正的带电颗粒。因此,对构图工具表面上的导电区施加电学电势,该构图工具表面包括由导电区和不导电区限定的图形。工具上的不导电图形不带电。使该工具充斥或者可选地浸入颗粒和液体混合物中,以使颗粒沉积进入导电层中的开口,该开口上暴露具有电学电势的导电基层,与其上利用不导电聚合物掩蔽导电基层的部分相反。以这种方式,将构图的工具表面暴露于介电液体中的具有电化学电荷的颗粒,从而使一些颗粒粘附到其上施加电学电势的构图工具表面上的导电区,并从而产生具有粘附到导电区的颗粒的构图工具表面。通过施加纯介电液体媒介物,从工具冲洗掉松散的颗粒。
通过利用介电液体预润湿,制备硅晶片或其它接收衬底。将衬底连接到完全接地的支架。
通过将具有粘附到其上的颗粒的构图工具表面接近地暴露于电子器件或其它衬底的表面,实现到衬底的转移,从而将至少部分所述一些颗粒从构图工具表面以由构图工具表面上的图形限定的衬底图形转移到衬底的表面。在一个实施例中为了实现这个目的,将带电且已冲洗工具置于将要构图的衬底表面上,其中隔离衬底与工具表面的间隙为约20微米至约300微米之间。由于衬底的电荷电势低于工具,颗粒转移到衬底,并保持与在工具表面上限定的图形相同的图形。
然后,从衬底蒸发介电液体。通过常规焊料回流技术,包括例如在烘炉中烘焙衬底以将衬底和焊料加热到回流温度,将焊料熔化并熔合到衬底。
图19示出了在利用印刷工具间接静电沉积下,通过上述方法在有机光电导体(OPC)工具上沉积的Sn/Pb粉末。
颗粒特性
根据本发明,沉积了用于各种应用的各种颗粒。如上所述,这些颗粒的范围从粉末到中等尺寸的颗粒到球体。
在一个实例中,颗粒为平均尺寸在约1微米至约100微米之间的焊料粉末。在一个优选实施例中,优选粉末为6型粉末,即尺寸分布主要在约10微米至约20微米之间的粉末。将电学电荷赋予该粉末,或者赋予使用的颗粒或球体,以通过利用电荷控制材料包覆使其成为动电的。这包括,例如,利用从Johnson Polymer of Sturdevant,Wisconsin可得的例如Joncryl 682的介电聚合物材料第一次喷涂包覆粉末。介电聚合物的目的是提供强酸性或碱性的表面,利用该表面随后施加的电荷导向物可以化学反应。随后,利用具有合适介电特性的液体,例如从Exxon Mobil可得的Isopar-G润湿包覆的粉末。另一合适的液体是商品名为Fluorinert从3-MCorporation可得的产品。粉末构成约0.5至约50重量%的粉末/液体混合物,以及约1至约20体积%的粉末/液体混合物。然后,将例如聚卵磷脂电解液(电荷导向物)的电荷控制材料,以每升Isopar含约10至约20,000微升电荷控制材料的量添加到该混合物。
在一个实施例中,将通过用蒸馏水灌注改性的石油磺酸钡(bariumpetronate)用作电荷导向物。已经发现,石油磺酸钡具有使沉积自限制的优点,因此更可控。具体地说,在衬底上沉积颗粒后,例如聚卵磷脂的多数电荷导向物从颗粒中分离并且消耗进溶液中。相反,石油磺酸钡保留在颗粒上。因此,在沉积颗粒上的石油磺酸钡电荷在衬底局部抵消了静电或动电沉积驱动力。随着沉积的进行,通过沉积的电荷最终平衡驱动力。以这种方式,可以通过控制混合入溶液中的石油磺酸钡电荷导向物的量,或者控制成像工具的电压(或者电荷电平)控制沉积。
作为电荷导向物的石油磺酸钡的另一个优点是,它可以用在未包覆的颗粒上。具体地说,不必首先利用介电聚合物包覆颗粒,因为石油磺酸钡将其本身附着到裸金属表面上。
在2004年7月9日提交的名称为COATING METAL POWDERS的美国专利申请中公开了用于颗粒制备的可选材料和方法,在此特别引入其整个内容作为参考。
不同厚度的焊料凸起
在一些应用中,希望在相同衬底上制造具有不同厚度的焊料凸起。例如,混合元件印刷布线板需要用于各类元件的不同厚度的焊料凸起。为了制造这样的焊料凸起变化,减小在衬底部分周围的孔面积,以得到较低高度的焊料凸起。
边缘效应
与本方法有关,以及与其它金属粉末沉积方法有关,在金属的外围周围存在所谓的“边缘效应”。更具体地说,边缘效应常发生在金属的外围。该边缘效应由在金属的外围区域金属粉末的过沉积的不均匀带构成。边缘效应归因于在外围的电场强得多的事实,因为在该外围外部的不导电层例如聚合物层的较大的连续区域上,存在电晕电荷的较多积累。因为电场力是电场乘电荷的函数(F=E×q),在外围的力较大,因为那里的场的值较大。在本发明的直接静电沉积模式中,积累的电晕电荷是由电晕发生器赋予的电荷,该电晕发生器产生使粉末导向衬底的电场线。
为了显著减轻或者消除边缘效应,本发明可以包括在衬底的工作区域外部以及邻近暴露的金属的栅格或其它图形的外围形成暴露的金属的大体上连续的带,如图21和22所示(与没有该带的图23相比)。与形成不导电层和暴露金属的图形时掩蔽、固化以及显影同时且以相同方式形成该带。通过消耗电晕电荷,该带阻止否则将在外围积累的过量电晕电荷,因此防止在外围形成太强的电场。从而产生如图24所示的没有边缘效应的沉积物。因此,以这种方式,为了消耗电荷以抑制边缘效应,本发明包括在衬底的非工作表面上具有暴露的金属的带的衬底。
直接写入
本发明的另一实施例采用由直接写入方法制造的带电衬底。可以两种方式进行直接写入:a)可以由激光束的单次通过使带电Si板放电,或者b)可以通过较强的激光束曝光未带电板,该激光束将具有潜在电导率的图形提供给通过电晕单元现在选择性带电的板。在后一种模式下,激光冲击非晶硅(α-硅),非晶硅变为电学导电。通过激光器在非晶硅衬底上绘制电学导电图形。具有例如约5至约6千伏的电势的电晕电荷发生器从非晶硅附近通过,以将电晕电荷赋予不导电区。然后,通过上述利用工具的静电或动电方法,将颗粒转移到导电区,其中非晶硅用作构图工具。具体地说,构图Si工具暴露于带电颗粒源,并且根据预写入的图形在Si上沉积带电颗粒。该工艺是无掩膜的,因为由工具的导电和不导电区而非由独立的掩膜限定图形。以相同的图形,将颗粒从非晶硅转移到衬底。具体地说,如果衬底的电荷电势低于工具,非晶硅工具与衬底以及通过电吸引转移的颗粒,即Cu形成接触。可选地,可以利用下述的热转移技术。
热转移技术
利用如上所述的工具和直接写入方法的静电和动电方法包括,通过将其上具有颗粒的工具置于将被构图的衬底表面上方,其中隔离衬底和工具表面的间隙为100至约500微米之间,将颗粒从工具转移到衬底。由于衬底的电荷电势低于工具,颗粒转移到衬底,并保持与在工具表面上限定的图形相同的图形。作为一种可选的转移技术,热转移技术已经发展成为本发明的部分。在工具上构图颗粒后,对工具进行部分回流操作以使颗粒可释放地附着,即进一步粘附到工具上。然后,在其上具有颗粒的工具与衬底形成接触,其中部分回流的颗粒暴露于它们将被转移到的衬底上的焊盘上方。构图后,在其上具有颗粒的工具与衬底形成接触,其中部分回流的颗粒暴露于它们将被转移到的衬底上的焊盘上方。在衬底后面具有热板以加热颗粒,并使它们从工具直接部分回流到衬底焊盘上。
下面的实例进一步说明了本发明。
实例1
为了制备电荷导向物,在200ml大烧杯中将从Crompton Corporationof Middlebury,Connecticut(USA)可得的石油磺酸钡(10g)添加到从ExxonMobil Chemical Company of Houston,Texas(USA)可得的Isopar G(90g)。将该烧杯置于加热的搅动板上,并且加热/搅动烧杯直到其达到80-90℃的温度。连续搅动和加热溶液时,每次一滴(~16微升)地添加高度纯化的水(10g),即极纯蒸馏水。在添加了所有的水后,再搅动和加热溶液一小时。然后,去除加热并且继续搅动直到溶液冷却下来。注意形成棕褐色的沉淀物。在室温下老化混合物一天,然后过滤混合物,去除沉淀。
实例2
为了包覆焊料粉末,在甲醇中溶解从Johnson Polymer,LLC ofStudevant,Wisconsin(USA)可得的Joncryl 682树脂至20%的浓度,然后喷涂包覆在从Welco GmbH,Potsdam,Germany可得的6型Sn63Pb37焊料粉末上。通过由Coating Place,Inc.of Verona,Wisconsin(USA)进行的Wurster Process实现喷涂。
实例3
为了制备调色剂,在1.4升烧杯中将包覆粉末(120g)添加到1升IsoparG中,并利用合适的例如从Victory Engineering,Hillside,New Jersey(USA)可得的“The Agitator”搅拌器,搅动包覆粉末。不使用磁性搅拌棒,因为它们磨损掉粉末的覆层。将根据实例1制备的电荷导向物(21滴;每滴~0.016ml)添加到混合物中,并且连续搅动至少四小时。使调色剂在室温下老化两天。保护调色剂不经受高湿度环境(>60%RH),以保持稳定性能。
实例4
为了制备衬底,通过溅射合适的凸起下金属(UBM),向标准成品硅晶片提供输入/输出焊盘的焊料可润湿阵列。UBM的一个典型实例是500的钨、500的铂,以及5,000的金。在铝覆盖层(典型300-500)上溅射这些UBM焊盘,然后光刻限定它们。铝用作地电势平面。在UMB/铝上形成电荷保持介电掩膜。例如,使用工业标准层压机器,将Morton-Dynachem层状5075干膜焊料掩膜真空层压到UBM侧向上的硅晶片上。利用光工具暴露该膜,并且光刻去除UBM焊盘周围和上方的区域。在0.5%硝酸池中冲洗构图的掩蔽晶片,然后在DI水中冲洗,以去除在光显影步骤中残余的痕量碱性溶液。干燥后,对掩膜进行UV曝光,以完成交联过程。利用层状5075干膜,在300-400nm范围内,该曝光量是250毫焦耳cm2。
实例5
为了直接基于静电的沉积,通过以125mm/秒的速度扫描晶片的赋电装置(scorotron)使掩蔽晶片带电。赋电装置的前栅格保持在-800V,而电晕金属丝保持在-6.25kV。带电后,将接近10ml的调色剂倾倒在缓慢旋转(10-15rpm)且保持在与垂直方向成30度的角的掩蔽晶片上。通过超声探针(Delta 8935Mk-II;从FFR Ultrasonics Ltd.Of Loughborough,UK可得)振动夹持晶片的夹盘2秒。在第二和第三次时在赋电装置滤网(screen)仍在-800V的条件下重复两次该成像步骤。从而利用焊料粉末调色剂完全填充在UBM上的掩膜中的孔。
实例6
为了基于动电沉积,将与实例5相同的掩蔽晶片用作衬底并安装在固定件上,其中晶片面向与晶片表面间隔6mm的金涂覆金属板。固定件设计为,使侧面完全敞开以不妨碍液体流动。固定件使晶片在成像期间旋转180°。大槽(内直径为29cm,深为27cm)中充满17升实例3的调色剂。利用Victory Engineering的“Agitator”以充足的力量从底部搅动调色剂,以使基本上所有的焊料颗粒悬浮。晶片由0至+400V(200V pk,100Hz的偏离地电势+200V的三角波)的电压驱动,同时金涂覆电极接地。将晶片/板固定件浸入调色剂池中,然后将电压“接通”10秒。然后,旋转晶片并在仍施加电压的条件下再保持10秒。在两个10秒的周期后,“切断”电压,并在取出前,晶片/板组件在池中保持5秒。在从掩膜的不需要的区域清洗残余调色剂颗粒(在成像工业中称为“背景”颗粒)时,该5秒的“冲洗”间隔很有用。从而,用焊料粉末调色剂完全填充掩膜中的孔。
实例7
为了利用转移工具成像,成像板制成与实例5的掩蔽晶片相同,除了可再用的衬底是例如ITO涂覆的玻璃或金属涂覆的玻璃环氧板的更耐用材料。介电材料本身是超声构图或化学蚀刻的硼硅玻璃(例如,从Corning Inc.of Acton,Massachusetts,USA可得的Pyrex;或从Shott North America,Inc.of Elmsford,New York,USA可得的Borofloat)。通过赋电装置使成像工具带电至表面电荷密度等于-500至-1000V。与实例5一样,将实例3的调色剂(10ml)施加到工具上。因此,在可再用的工具上产生填充的图像。将接收衬底,即未掩蔽但经UBM处理的晶片(实例4)连接到这样的电压,该电压等于成像工具的电压(在这种情况下,-500至-1000V),然后使其与仍润湿的成像工具形成实质的接触。在接触前未利用调色剂液体润湿接收衬底,因为过多液体严重降低图像质量。随后在接收衬底上的电压降至零或者甚至微正,并且撤消接收衬底与成像工具的接触。从而在接收衬底上形成良好、清洁的图像。
实例8
为了通过可选实施例利用转移工具成像,可再用的图像工具由构图介电层,例如两侧上各具有17微米铜层的125微米厚的聚酰亚胺层构成。聚酰亚胺材料是从DuPont Inc.,Wilmington Delaware可得的PYRALUX。在这种情况下,为了容易地清洗工具,激光切“透”工具。可再用的工具安装在适合的夹具上,其中底部金属层接地且顶部连接到高压电源(典型为-1000至-2000V)。一次或多次地使用实例3的调色剂(10ml)以显影工具,然后利用与实例7一样的转移步骤在接收衬底上沉积图像。
实例9
为了通过直接激光写入制造成像工具,使由Kyocera Corpof Japan制造的平的非晶硅板带电至-1000V。穿过板扫描LED阵列和条形透镜组件,使该板以图像的方式放电。然后与实例5一样但是仅仅显影一次。干燥润湿的图像,并在100℃下轻微地烘焙2分钟。在加热的夹盘上安装与实例4一样的未掩蔽但经UMB处理的晶片,该加热的夹盘使晶片达到250℃。用焊剂Alpha Metal#3355(Cookson Electronics,Inc.,Jersey City,NewJersey,USA)溅射干燥的板,然后干燥该焊剂。在来自晶片的热量熔化焊料粉末的位置,接收晶片与熔化的图像形成接触,该焊料粉末选择性地润湿晶片的UBM。
虽然前面说明了主要在对衬底施加金属颗粒的情况下本发明的的方法和材料,如果颗粒的性质使它们能够被赋予电化学电荷,这些方法和材料也可应用于沉积非金属颗粒。这种包括非金属粉末的方法的实例包括沉积无机发光材料(phosphor)、玻璃、陶瓷、例如用于平板显示的半导体材料等。
当介绍本发明的要素或其优选实施例时,冠词“一个”、“该”以及“所述”旨在表示具有一个或多个该要素。术语“包括”以及“具有”旨在包括并表示除了列出的要素外还可存在其它要素。
由于只要不脱离本发明的范围,可以对上述内容进行各种改变,旨在将在上述说明书包括以及在附图中示出的所有内容解释为是说明性的而非限定性的。上述内容涉及仅仅为了说明的目的而提供的有限数量的实施例。旨在通过所附权利要求书限定本发明的范围,并且可对上述实施例进行不脱离本发明的范围的修改。
Claims (69)
1.一种对具有掩蔽表面和未掩蔽表面的衬底施加颗粒图形的方法,所述方法包括以下步骤:
对所述衬底的至少一些所述掩蔽表面施加静电电荷,以产生电荷保持掩蔽表面;以及
将其上具有所述电荷保持掩蔽表面的所述衬底暴露于在液体介质中的所述颗粒,在所述液体介质中所述颗粒可移动,所述颗粒具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的电学电荷,从而在所述衬底的所述未掩蔽表面上静电沉积所述颗粒。
2.根据权利要求1的方法,包括在将所述衬底暴露于所述颗粒期间,将所述未掩蔽表面连接到地电势。
3.根据权利要求1的方法,包括在将所述衬底暴露于所述颗粒期间,将所述未掩蔽表面连接到有利于所述沉积的电学电势。
4.根据权利要求1、2或者3的方法,包括以下步骤:
在将所述衬底暴露于所述颗粒后,重复所述施加所述电荷的步骤,以在所述掩蔽表面上再次产生电荷;以及
重复所述将所述衬底暴露于所述颗粒的步骤,以在所述衬底的所述未掩蔽表面上的所述颗粒上沉积其它颗粒。
5.根据权利要求1、2或者3的方法,包括在将所述衬底暴露于所述颗粒期间,振动所述衬底。
6.根据权利要求1、2或者3的方法,其中为了消耗电荷以抑制边缘效应,在所述衬底的非工作表面上所述衬底具有暴露的金属的带。
7.一种对具有凸起下金属、掩蔽表面以及未掩蔽表面的电子器件衬底施加颗粒图形的方法,所述方法包括以下步骤:
对所述电子器件衬底的至少一些所述掩蔽表面施加静电电荷,以产生电荷保持掩蔽表面;以及
将其上具有所述电荷保持掩蔽表面的所述电子器件衬底暴露于在液体介质中的所述颗粒,在所述液体介质中所述颗粒可移动,所述颗粒具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的电学电荷,从而在所述衬底的所述未掩蔽表面上静电沉积所述颗粒。
8.根据权利要求7的方法,其中所述掩蔽表面包括以在所述凸起下金属上方构图的聚合物掩膜表面,以及所述未掩蔽表面包括未通过所述聚合物掩膜表面覆盖的暴露的凸起下金属。
9.根据权利要求8的方法,其中所述颗粒包括焊料金属颗粒,所述方法包括以下步骤:
通过使电晕电荷发生器从所述至少一些所述聚合物掩膜表面附近通过,对所述衬底的至少一些所述聚合物掩膜表面施加所述静电电荷,以产生所述电荷保持掩蔽表面;以及
将其上具有所述电荷保持掩蔽表面的所述衬底暴露于在介电液体媒介物中的所述焊料金属颗粒,在所述介电液体媒介物中所述焊料金属颗粒可移动,所述焊料金属颗粒具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的所述电学电荷,从而在所述暴露的凸起下金属上静电沉积所述焊料金属颗粒。
10.根据权利要求9的方法,包括在将所述衬底暴露于在所述介电液体媒介物中的所述焊料金属颗粒期间,将所述凸起下金属连接到地电势。
11.根据权利要求9的方法,包括在将所述衬底暴露于在所述介电液体媒介物中的所述焊料金属颗粒期间,将所述凸起下金属连接到有利于所述沉积的电学电势。
12.根据权利要求10或11的方法,包括在将所述衬底暴露于所述焊料金属颗粒期间,振动所述衬底。
13.根据权利要求8的方法,其中所述颗粒包括焊料金属颗粒,所述方法包括以下步骤:
通过使电晕电荷发生器从所述至少一些所述聚合物掩膜表面附近通过,对所述衬底的至少一些所述聚合物掩膜表面施加所述静电电荷,以产生所述电荷保持掩蔽表面;
将其上具有所述电荷保持掩蔽表面的所述衬底暴露于在介电液体媒介物中的所述焊料金属颗粒,在所述介电液体媒介物中所述焊料金属颗粒可移动,所述焊料金属颗粒具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的所述电学电荷,从而在所述暴露的凸起下金属上静电沉积所述焊料金属颗粒;
重复所述通过使所述电晕电荷发生器从所述至少一些所述聚合物掩膜表面附近通过,对所述衬底的至少一些所述聚合物掩膜表面施加所述静电电荷的步骤,以在所述电荷保持掩蔽表面上再次产生电荷;以及
重复所述将其上具有所述电荷保持掩蔽表面的所述衬底暴露于在所述介电液体媒介物中的所述焊料金属颗粒,在所述介电液体媒介物中所述焊料金属颗粒可移动,所述焊料金属颗粒具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的所述电学电荷的步骤,从而在所述暴露的凸起下金属上沉积的所述焊料金属颗粒上方静电沉积其它焊料金属颗粒。
14.根据权利要求13的方法,包括在将所述衬底暴露于在所述介电液体媒介物中的所述焊料金属颗粒期间以及在所述重复所述暴露步骤期间,将所述凸起下金属连接到地电势。
15.根据权利要求13的方法,包括在将所述衬底暴露于在所述介电液体媒介物中的所述焊料金属颗粒期间以及在所述重复所述暴露步骤期间,将所述凸起下金属连接到有利于所述沉积的电学电势。
16.根据权利要求13、14或15的方法,包括在将所述衬底暴露于所述焊料金属颗粒的步骤期间以及在所述重复所述暴露的步骤期间,振动所述衬底。
17.根据权利要求8的方法,其中所述颗粒包括平均直径至少为100微米的焊料金属球体,所述方法包括以下步骤:
通过使电晕电荷发生器从所述至少一些所述聚合物掩膜表面附近通过,对所述衬底的至少一些所述聚合物掩膜表面施加所述静电电荷,以产生所述电荷保持掩蔽表面;以及
将其上具有所述电荷保持掩蔽表面的所述衬底暴露于在介电液体媒介物中的所述焊料金属球体,在所述介电液体媒介物中所述焊料金属球体可移动,所述焊料金属球体具有与在所述电荷保持掩蔽表面上的所述电荷极性相同的所述电学电荷,从而在所述暴露的凸起下金属上静电沉积所述焊料金属球体。
18.根据权利要求17的方法,包括在将所述衬底暴露于在所述介电液体媒介物中的所述焊料金属球体期间,将所述凸起下金属连接到地电势。
19.根据权利要求17的方法,包括在将所述衬底暴露于在所述介电液体媒介物中的所述焊料金属球体期间,将所述凸起下金属连接到有利于所述沉积的电学电势。
20.根据权利要求17、18或19的方法,包括在将所述衬底暴露于所述焊料金属球体期间,振动所述衬底。
21.根据权利要求7的方法,其中为了消耗电荷以抑制边缘效应,在所述衬底的非工作表面上所述衬底具有暴露的金属的带。
22.一种对具有掩蔽表面和未掩蔽表面的衬底施加颗粒图形的方法,所述方法包括以下步骤:
将所述衬底浸入包括所述颗粒的颗粒浆料中,其中所述衬底的所述未掩蔽部分构成电极;
将反电极浸入所述颗粒浆料中;以及
将所述电极和反电极连接到电源的相反电极,以在所述反电极和所述电极之间建立电学电势,从而在构成所述电极的所述衬底的所述未掩蔽部分上动电沉积所述颗粒。
23.根据权利要求22的方法,包括在所述沉积期间振动所述衬底。
24.根据权利要求22或23的方法,其中为了消耗电荷以抑制边缘效应,在所述衬底的非工作表面上所述衬底具有暴露的金属的带。
25.根据权利要求22的方法,其中所述电学电势是交流电势。
26.一种对具有凸起下金属、掩蔽表面以及未掩蔽表面的电子器件衬底施加颗粒图形的方法,所述方法包括以下步骤:
将所述电子器件衬底浸入包括所述颗粒的动电溶液中,其中所述衬底的所述未掩蔽部分构成电极;
将反电极浸入所述动电溶液中;以及
将所述电极和反电极连接到电源的相反电极,以在所述反电极和所述电极之间建立电学电势,从而在构成所述电极的所述衬底的所述未掩蔽部分上动电沉积所述颗粒。
27.根据权利要求26的方法,其中所述掩蔽表面包括在所述凸起下金属上方构图的聚合物掩膜表面,所述未掩蔽表面包括未用所述聚合物掩膜表面覆盖的暴露的凸起下金属,以及所述颗粒包括焊料金属颗粒。
28.根据权利要求26或27的方法,包括在所述沉积期间,振动所述衬底。
29.根据权利要求27的方法,其中所述颗粒包括平均直径为100微米至1mm之间的焊料金属球体。
30.根据权利要求29的方法,包括在所述沉积期间,振动所述衬底。
31.根据权利要求26、29或30的方法,其中为了消耗电荷以抑制边缘效应,在所述衬底的非工作表面上,所述衬底具有暴露的金属的带。
32.一种对衬底施加颗粒图形的方法,所述方法包括以下步骤:
对包括由导电区和不导电区限定的图形的构图工具表面的不导电区施加静电电荷,以产生带电的构图工具表面;
将所述带电构图工具表面暴露于在介电液体中的颗粒,所述颗粒具有电化学电荷,从而使一些所述颗粒粘附到在所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的颗粒的构图工具表面;以及
将具有粘附到其上的颗粒的所述构图工具表面贴近地暴露于衬底的表面,从而以由在所述构图工具表面上的所述图形限定的衬底图形,将至少部分所述一些颗粒从所述构图工具表面转移到所述衬底的所述表面。
33.根据权利要求32的方法,其中所述构图工具包括在其上具有导电层的绝缘支架。
34.根据权利要求33的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
35.根据权利要求33的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
36.根据权利要求34的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
37.根据权利要求32的方法,其中所述构图工具包括带电Si板,通过将所述Si板暴露于激光束使其部分放电。
38.根据权利要求32的方法,其中所述构图工具包括未带电Si板,所述未带电Si板具有通过暴露于提供潜在电导率的图形的激光束形成的所述导电区。
39.一种对电子器件衬底施加焊料金属颗粒的图形的方法,所述方法包括以下步骤:
对包括由导电区和不导电区限定的图形的构图工具表面的不导电区施加静电电荷,以产生带电构图工具表面;
将所述带电构图工具表面暴露于在介电液体中的焊料金属颗粒,所述焊料金属颗粒具有电化学电荷,从而使一些所述焊料金属颗粒粘附到在所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的焊料金属颗粒的构图工具表面;以及
将具有粘附到其上的焊料金属颗粒的所述构图工具表面贴近地暴露于所述电子器件衬底的表面,从而以由在所述构图工具表面上的所述图形限定的衬底图形,将至少部分所述一些焊料金属颗粒从所述构图工具表面转移到所述衬底的所述表面。
40.根据权利要求39的方法,其中所述构图工具包括在其上具有导电层的绝缘支架。
41.根据权利要求39的方法,其中所述构图工具包括在其上具有导电层以及在所述导电层上方构图的不导电聚合物的绝缘支架。
42.根据权利要求40的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
43.根据权利要求41的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
44.根据权利要求40的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
45.根据权利要求41的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
46.根据权利要求39的方法,其中所述构图工具包括带电Si板,通过将所述Si板暴露于激光束使其部分放电。
47.根据权利要求39的方法,其中所述构图工具包括未带电Si板,所述未带电Si板具有通过暴露于提供潜在电导率的图形的激光束形成的所述导电区。
48.一种对衬底施加颗粒图形的方法,所述方法包括以下步骤:
对包括由导电区和不导电区限定的图形的构图工具表面上的导电区施加电化学电势;
将所述构图工具表面暴露于在介电液体中的颗粒,所述颗粒具有电化学电荷,从而使一些所述颗粒粘附到在被施加所述电化学电势的所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的颗粒的构图工具表面;以及
将具有粘附到其上的颗粒的所述构图工具表面贴近地暴露于衬底的表面,从而以由在所述构图工具表面上的所述图形限定的衬底图形,将至少部分所述一些颗粒从所述构图工具表面转移到所述衬底的所述表面。
49.根据权利要求48的方法,其中所述构图工具包括在其上具有导电层的绝缘支架。
50.根据权利要求48的方法,其中所述构图工具包括在其上具有导电层以及在所述导电层上方构图的不导电聚合物的绝缘支架。
51.根据权利要求49的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
52.根据权利要求50的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
53.根据权利要求49的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
54.根据权利要求50的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
55.根据权利要求48的方法,其中所述构图工具包括带电Si板,通过将所述Si板暴露于激光束使其部分放电。
56.根据权利要求48的方法,其中所述构图工具包括未带电Si板,所述未带电Si板具有通过暴露于提供潜在电导率的图形的激光束形成的所述导电区。
57.一种对电子器件衬底施加焊料金属颗粒的图形的方法,所述方法包括以下步骤:
对包括由导电区和不导电区限定的图形的构图工具表面上的导电区施加电学电势;
将所述构图工具表面暴露于在介电液体中的焊料金属颗粒,所述颗粒具有电化学电荷,从而使一些所述焊料金属颗粒粘附到在被施加所述电学电势的所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的焊料金属颗粒的构图工具表面;以及
将具有粘附到其上的焊料金属颗粒的所述构图工具表面贴近地暴露于衬底的表面,从而以由在所述构图工具表面上的所述图形限定的衬底图形,将至少部分所述一些焊料金属颗粒从所述构图工具表面转移到所述衬底的所述表面。
58.根据权利要求57的方法,其中所述构图工具包括在其上具有导电层的绝缘支架。
59.根据权利要求57的方法,其中所述构图工具包括在其上具有导电层以及在所述导电层上方构图的不导电聚合物的绝缘支架。
60.根据权利要求58的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
61.根据权利要求59的方法,其中所述绝缘支架由选自聚酰亚胺和环氧树脂的材料构成。
62.根据权利要求58的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
63.根据权利要求59的方法,其中所述导电层包括选自氧化铟锡、Al、Ti、Pt、TiW、Au、Ni以及Cu的材料。
64.根据权利要求57的方法,其中所述构图工具包括带电Si板,通过将所述Si板暴露于激光束使其部分放电。
65.根据权利要求57的方法,其中所述构图工具包括未带电Si板,所述未带电Si板具有通过暴露于提供潜在电导率的图形的激光束形成的所述导电区。
66.一种对电子器件衬底施加焊料金属颗粒的图形的方法,所述方法包括以下步骤:
对包括由导电区和不导电区限定的图形的构图工具表面的不导电区施加静电电荷,以产生带电构图工具表面;
将所述带电构图工具表面暴露于在介电液体中的焊料金属颗粒,所述焊料金属颗粒具有电化学电荷,从而使一些所述焊料金属颗粒粘附到在所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的焊料金属颗粒的构图工具表面;以及
将具有粘附到其上的焊料金属颗粒的所述构图工具表面贴近地暴露于所述电子器件衬底的表面,并加热所述焊料金属颗粒,从而以由在所述构图工具表面上的所述图形限定的衬底图形,将至少部分所述一些焊料金属颗粒从所述构图工具表面转移到所述衬底的所述表面。
67.根据权利要求66的方法,包括在将具有粘附到其上的焊料金属颗粒的所述构图工具表面贴近地暴露于所述电子器件衬底的所述表面之前,部分回流所述焊料金属颗粒,以进一步将所述焊料金属颗粒粘附到所述构图工具表面。
68.一种对电子器件衬底施加焊料金属颗粒的图形的方法,所述方法包括以下步骤:
对包括由导电区和不导电区限定的图形的构图工具表面上的导电区施加电学电势;
将所述构图工具表面暴露于在介电液体中的焊料金属颗粒,所述颗粒具有电化学电荷,从而使一些所述焊料金属颗粒粘附到在被施加所述电学电势的所述构图工具表面上的所述导电区,从而产生具有粘附到所述导电区的焊料金属颗粒的构图工具表面;以及
将具有粘附到其上的焊料金属颗粒的所述构图工具表面贴近地暴露于衬底的表面,并加热所述焊料金属颗粒,从而以由在所述构图工具表面上的所述图形限定的衬底图形,将至少部分所述一些焊料金属颗粒从所述构图工具表面转移到所述衬底的所述表面。
69.根据权利要求68的方法,包括在将具有粘附到其上的焊料金属颗粒的所述构图工具表面贴近地暴露于所述电子器件衬底的所述表面之前,部分回流所述焊料金属颗粒,以进一步将所述焊料金属颗粒粘附到所述构图工具表面。
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PCT/US2004/022143 WO2005033352A2 (en) | 2003-07-09 | 2004-07-09 | Deposition and patterning process |
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8576162B2 (en) * | 2005-03-14 | 2013-11-05 | Sipix Imaging, Inc. | Manufacturing processes of backplane for segment displays |
US7678255B2 (en) | 2005-05-18 | 2010-03-16 | Fry's Metals, Inc. | Mask and method for electrokinetic deposition and patterning process on substrates |
US7538429B2 (en) * | 2006-08-21 | 2009-05-26 | Intel Corporation | Method of enabling solder deposition on a substrate and electronic package formed thereby |
JP4219968B2 (ja) * | 2007-03-07 | 2009-02-04 | 新光電気工業株式会社 | 導電性ボール載置装置 |
US7703662B2 (en) * | 2007-03-07 | 2010-04-27 | Shinko Electric Industries Co., Ltd. | Conductive ball mounting apparatus and conductive ball mounting method |
US7829451B2 (en) * | 2007-07-18 | 2010-11-09 | Shinko Electric Industries Co., Ltd. | Conductive ball mounting method and apparatus having a movable solder ball container |
US8304062B2 (en) * | 2007-07-20 | 2012-11-06 | Fry's Metals, Inc. | Electrical conductors and methods of making and using them |
US8216441B2 (en) * | 2007-12-10 | 2012-07-10 | Applied Materials, Inc. | Electrophoretic solar cell metallization process and apparatus |
US8207057B2 (en) * | 2008-12-23 | 2012-06-26 | Intel Corporation | Microball assembly methods, and packages using maskless microball assemblies |
US8323748B2 (en) * | 2009-05-15 | 2012-12-04 | Achrolux Inc. | Methods for forming uniform particle layers of phosphor material on a surface |
KR20120083936A (ko) * | 2009-12-26 | 2012-07-26 | 아크로룩스 인코포레이티드 | 발산광의 파장을 변환하는 균일한 필름-층 구조 및 이를 형성하는 방법 |
KR101084185B1 (ko) * | 2010-01-12 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 패턴 형성 방법 및 유기 발광 소자의 제조방법 |
US9102104B2 (en) | 2012-06-05 | 2015-08-11 | The Boeing Company | Method for reducing porosities in composite resin parts |
CN103030097B (zh) * | 2012-12-12 | 2015-06-17 | 中北大学 | 基于静电场自聚焦的圆片级低维纳米结构的制备方法 |
US10308856B1 (en) | 2013-03-15 | 2019-06-04 | The Research Foundation For The State University Of New York | Pastes for thermal, electrical and mechanical bonding |
WO2014148727A1 (ko) * | 2013-03-22 | 2014-09-25 | 재단법인 멀티스케일 에너지시스템 연구단 | 멀티-스파크 방전 발생기 및 이를 이용한 나노입자 구조체 제조방법 |
KR101498378B1 (ko) | 2013-03-22 | 2015-03-03 | 서울대학교산학협력단 | 멀티-스파크 방전 발생기 및 이를 이용한 나노입자 구조체 제조방법 |
CN105271103B (zh) * | 2015-10-20 | 2020-12-01 | 国家纳米科学中心 | 一种纳米结构阵列及其制备方法和用途 |
CN110235062A (zh) * | 2017-03-28 | 2019-09-13 | 惠普印迪戈股份公司 | 静电墨水 |
AT521457B1 (de) * | 2018-07-13 | 2020-07-15 | Ac2T Res Gmbh | Sensor zur Erfassung von Fluideigenschaften |
US20220221799A1 (en) * | 2019-05-22 | 2022-07-14 | The Board of Tristees of th University of Illinois | Photoresist-free deposition and patterning with vacuum ultraviolet lamps |
CN113009185A (zh) * | 2021-04-25 | 2021-06-22 | 中国科学院物理研究所 | 一种透射电子显微镜的微米级粉末样品的制备方法 |
CN115283790B (zh) * | 2022-07-15 | 2024-06-25 | 重庆大学 | 一种相位自适应的超声熔池搅拌保形电弧增材制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5071517A (en) * | 1989-11-21 | 1991-12-10 | Solution Technology Systems | Method for directly electroplating a dielectric substrate and plated substrate so produced |
US6027630A (en) * | 1997-04-04 | 2000-02-22 | University Of Southern California | Method for electrochemical fabrication |
CN1330356A (zh) * | 2000-06-29 | 2002-01-09 | 松下电器产业株式会社 | 在基板上的图样形成方法及装置 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3570040A (en) * | 1968-03-08 | 1971-03-16 | Fuji Denki Kaden Kk | Floor and ground cleaner |
US4298407A (en) | 1980-08-04 | 1981-11-03 | E. I. Du Pont De Nemours And Company | Flux treated solder powder composition |
DE3514867A1 (de) | 1985-04-25 | 1986-11-06 | Agfa-Gevaert Ag, 5090 Leverkusen | Elektrostatografischer suspensionsentwickler und verfahren zu dessen herstellung |
US4857482A (en) | 1987-06-30 | 1989-08-15 | Kabushiki Kaisha Toshiba | Method of forming bump electrode and electronic circuit device |
DE3913115A1 (de) | 1989-04-21 | 1990-10-25 | Du Pont Deutschland | Verfahren zur herstellung von elektrisch leitfaehigen mustern |
JPH0691129B2 (ja) * | 1989-07-31 | 1994-11-14 | キヤノン株式会社 | 電極端子の相互接続方法および電気接続構造体の製造方法 |
DE69026992T2 (de) * | 1989-08-17 | 1996-10-24 | Canon Kk | Prozess zur gegenseitigen Konnektion von Elektrodenanschlüssen |
JP2962776B2 (ja) | 1989-08-31 | 1999-10-12 | 大日本印刷株式会社 | 導電性パターン形成用組成物及び導電性パターン形成方法 |
US5376403A (en) | 1990-02-09 | 1994-12-27 | Capote; Miguel A. | Electrically conductive compositions and methods for the preparation and use thereof |
JPH06283850A (ja) * | 1993-03-30 | 1994-10-07 | Hitachi Ltd | 電極端子の接続方法 |
US6025258A (en) | 1994-01-20 | 2000-02-15 | Fujitsu Limited | Method for fabricating solder bumps by forming solder balls with a solder ball forming member |
KR970064335A (ko) | 1996-02-01 | 1997-09-12 | 빈센트 비. 인그라시아 | 프린트된 와이어링 보드 단자상에 전도층을 형성하는 방법 및 장치 |
US5981043A (en) | 1996-04-25 | 1999-11-09 | Tatsuta Electric Wire And Cable Co., Ltd | Electroconductive coating composition, a printed circuit board fabricated by using it and a flexible printed circuit assembly with electromagnetic shield |
US5817374A (en) | 1996-05-31 | 1998-10-06 | Electrox Corporation | Process for patterning powders into thick layers |
EP0992840A1 (en) * | 1997-06-13 | 2000-04-12 | Sekisui Chemical Co., Ltd. | Method of arranging particulates liquid crystal display, and anisotropic conductive film |
US5976337A (en) | 1997-10-27 | 1999-11-02 | Allison Engine Company | Method for electrophoretic deposition of brazing material |
TW552243B (en) | 1997-11-12 | 2003-09-11 | Jsr Corp | Process of forming a pattern on a substrate |
JPH11272125A (ja) | 1998-03-24 | 1999-10-08 | Murata Mfg Co Ltd | 電子写真装置 |
JP3418555B2 (ja) * | 1998-07-21 | 2003-06-23 | 株式会社日本触媒 | 被覆金属粒子およびこれを用いた電子写真用トナー |
US6153348A (en) | 1998-08-07 | 2000-11-28 | Parelec Llc | Electrostatic printing of conductors on photoresists and liquid metallic toners therefor |
JP3232280B2 (ja) * | 1998-09-28 | 2001-11-26 | 京セラ株式会社 | 導体パターン形成用金属トナー、導体パターン形成用金属トナーの製造方法、および導体パターン形成用金属トナーの使用方法 |
US6781612B1 (en) | 1998-10-13 | 2004-08-24 | Electrox Corporation | Electrostatic printing of functional toner materials for electronic manufacturing applications |
JP2000276945A (ja) | 1999-03-25 | 2000-10-06 | Murata Mfg Co Ltd | 導体ペースト及びそれを用いた回路基板 |
US6579652B1 (en) | 1999-11-23 | 2003-06-17 | Electrox Corporation | Durable electrostatic printing plate and method of making the same |
US6524758B2 (en) | 1999-12-20 | 2003-02-25 | Electrox Corporation | Method of manufacture of printed wiring boards and flexible circuitry |
US6345718B1 (en) | 2000-02-09 | 2002-02-12 | Fry's Metals, Inc. | Method and apparatus for immobilizing solder spheres |
JP2001265122A (ja) * | 2000-03-17 | 2001-09-28 | Murata Mfg Co Ltd | 回路形成用電子写真法および装置 |
JP2001358447A (ja) * | 2000-04-14 | 2001-12-26 | Matsushita Electric Ind Co Ltd | 接合パターンの形成方法およびそのための装置 |
US6540127B2 (en) | 2000-06-22 | 2003-04-01 | The Regents Of The University Of California | Electrostatic methods and apparatus for mounting and demounting particles from a surface having an array of tacky and non-tacky areas |
AU2002226093A1 (en) | 2000-12-15 | 2002-06-24 | Electrox Corp. | Process for the manufacture of novel, inexpensive radio frequency identificationdevices |
JP2004526994A (ja) * | 2001-02-08 | 2004-09-02 | エレクトロックス コーポレイション | 段になった表面を有する改良された静電印刷版 |
WO2002071465A1 (en) | 2001-03-02 | 2002-09-12 | Electrox Corp. | Process for the manufacture of large area arrays of discrete components |
EP1271243A3 (en) | 2001-06-19 | 2003-10-15 | Fuji Photo Film Co., Ltd. | Image forming material, color filter master plate, and color filter |
JP3964659B2 (ja) * | 2001-11-30 | 2007-08-22 | 松下電器産業株式会社 | 荷電性粒子およびその製造方法ならびに電子回路基板 |
US6780249B2 (en) | 2002-12-06 | 2004-08-24 | Eastman Kodak Company | System for producing patterned deposition from compressed fluid in a partially opened deposition chamber |
US6790483B2 (en) | 2002-12-06 | 2004-09-14 | Eastman Kodak Company | Method for producing patterned deposition from compressed fluid |
-
2004
- 2004-07-09 WO PCT/US2004/022143 patent/WO2005033352A2/en active Search and Examination
- 2004-07-09 CN CN2004800257956A patent/CN1849180B/zh not_active Expired - Fee Related
- 2004-07-09 TW TW93120676A patent/TWI395256B/zh not_active IP Right Cessation
- 2004-07-09 KR KR1020067000517A patent/KR101105991B1/ko active IP Right Grant
- 2004-07-09 US US10/888,286 patent/US7585549B2/en active Active
- 2004-07-09 EP EP04809486A patent/EP1663513A4/en not_active Withdrawn
- 2004-07-09 JP JP2006518946A patent/JP5248772B2/ja not_active Expired - Lifetime
- 2004-08-16 MY MYPI20043330A patent/MY158861A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5071517A (en) * | 1989-11-21 | 1991-12-10 | Solution Technology Systems | Method for directly electroplating a dielectric substrate and plated substrate so produced |
US6027630A (en) * | 1997-04-04 | 2000-02-22 | University Of Southern California | Method for electrochemical fabrication |
CN1330356A (zh) * | 2000-06-29 | 2002-01-09 | 松下电器产业株式会社 | 在基板上的图样形成方法及装置 |
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TW200509210A (en) | 2005-03-01 |
MY158861A (en) | 2016-11-15 |
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