CN1845254B - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

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Publication number
CN1845254B
CN1845254B CN2006100741837A CN200610074183A CN1845254B CN 1845254 B CN1845254 B CN 1845254B CN 2006100741837 A CN2006100741837 A CN 2006100741837A CN 200610074183 A CN200610074183 A CN 200610074183A CN 1845254 B CN1845254 B CN 1845254B
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CN
China
Prior art keywords
memory device
semiconductor memory
data
memory cell
local charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006100741837A
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English (en)
Chinese (zh)
Other versions
CN1845254A (zh
Inventor
椋木敏夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1845254A publication Critical patent/CN1845254A/zh
Application granted granted Critical
Publication of CN1845254B publication Critical patent/CN1845254B/zh
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN2006100741837A 2005-04-07 2006-04-07 半导体存储器件 Expired - Fee Related CN1845254B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005111350A JP4684719B2 (ja) 2005-04-07 2005-04-07 半導体記憶装置
JP111350/2005 2005-04-07

Publications (2)

Publication Number Publication Date
CN1845254A CN1845254A (zh) 2006-10-11
CN1845254B true CN1845254B (zh) 2010-11-03

Family

ID=37064179

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006100741837A Expired - Fee Related CN1845254B (zh) 2005-04-07 2006-04-07 半导体存储器件

Country Status (3)

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US (2) US7333368B2 (enExample)
JP (1) JP4684719B2 (enExample)
CN (1) CN1845254B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4523531B2 (ja) * 2005-09-29 2010-08-11 シャープ株式会社 半導体記憶装置及びその読出方法、並びに電子機器
JP2009266339A (ja) * 2008-04-28 2009-11-12 Panasonic Corp 半導体記憶装置とその半導体記憶装置を用いた電子機器
US7916537B2 (en) * 2009-06-11 2011-03-29 Seagate Technology Llc Multilevel cell memory devices having reference point cells
JP2011216136A (ja) * 2010-03-31 2011-10-27 Fujitsu Semiconductor Ltd 半導体集積回路装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69524572T2 (de) * 1995-04-28 2002-08-22 Stmicroelectronics S.R.L., Agrate Brianza Leseverstärkerschaltung für Halbleiterspeicheranordnungen
JP3726337B2 (ja) * 1995-05-02 2005-12-14 ヤマハ株式会社 半導体記憶装置
WO1998006101A1 (de) * 1996-08-01 1998-02-12 Siemens Aktiengesellschaft Verfahren zum betrieb einer speicherzellenanordnung
US5803299A (en) * 1996-08-05 1998-09-08 Sealy, Jr.; Scott P. Container for multiple trash bags
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
JP2001057096A (ja) * 1999-06-11 2001-02-27 Hitachi Ltd 多重化メモリ及びそれを用いたセンサ並びに制御システム
US6269023B1 (en) * 2000-05-19 2001-07-31 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a current limiter
US6456536B1 (en) * 2000-06-23 2002-09-24 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a substrate bias
JP2002237191A (ja) 2001-02-13 2002-08-23 Seiko Instruments Inc 相補型不揮発性記憶回路
JP3623756B2 (ja) * 2001-06-13 2005-02-23 松下電器産業株式会社 不揮発性半導体記憶装置
JP2004247436A (ja) * 2003-02-12 2004-09-02 Sharp Corp 半導体記憶装置、表示装置及び携帯電子機器
US7184298B2 (en) * 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
DE102004010840B4 (de) * 2004-03-05 2006-01-05 Infineon Technologies Ag Verfahren zum Betreiben einer elektrischen beschreib- und löschbaren nicht flüchtigen Speicherzelle und eine Speichereinrichtung zum elektrischen nicht flüchtigen Speichern
US7206224B1 (en) * 2004-04-16 2007-04-17 Spansion Llc Methods and systems for high write performance in multi-bit flash memory devices

Also Published As

Publication number Publication date
JP2006294102A (ja) 2006-10-26
US20060250841A1 (en) 2006-11-09
JP4684719B2 (ja) 2011-05-18
US20080137434A1 (en) 2008-06-12
US7333368B2 (en) 2008-02-19
US7532519B2 (en) 2009-05-12
CN1845254A (zh) 2006-10-11

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101103

Termination date: 20120407