CN1813346A - 包含硅氧烷基芳族二胺的底层填料和模塑配混料 - Google Patents
包含硅氧烷基芳族二胺的底层填料和模塑配混料 Download PDFInfo
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- CN1813346A CN1813346A CNA2004800183219A CN200480018321A CN1813346A CN 1813346 A CN1813346 A CN 1813346A CN A2004800183219 A CNA2004800183219 A CN A2004800183219A CN 200480018321 A CN200480018321 A CN 200480018321A CN 1813346 A CN1813346 A CN 1813346A
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Abstract
一种装置,它包括:包含第一组接触点的第一基板;包含第二组接触点的第二基板,第二组接触点通过第一组接触点的一部分和第二组接触的一部分之间的互连联接到第一基板;放置在第一基板和第二基板之间的包含硅氧烷基芳族二胺的组合物。
Description
技术领域
集成电路封装。
背景技术
集成电路芯片或管芯通常组装在焊接到印刷电路板的封装上。芯片或管芯可以在用来电连接芯片或管芯至封装基板以及相应集成电路至该封装基板的一个表面上有触点。因此,合适的基板可以在一个表面上具有相应的触点。芯片或管芯的许多触点连接到封装基板的触点上的一种方式是通过例如在控制熔塌高度芯片连接(C4)过程中的焊料球触点。
封装基板可以由复合材料制成,所述复合材料的热膨胀系数(CTE)不同于芯片或管芯的热膨胀系数。封装的温度变化可导致芯片和封装基板之间产生不同的膨胀。不均匀膨胀会诱发应力,使芯片和封装基板之间的连接碎裂(如使一个或多个焊接盘碎裂)。所述连接载有芯片和封装基板之间的电流,因此该连接中的任何碎裂可能影响电路中的操作。
通常,如所述的封装可以包括位于芯片和封装基板之间的底层填料(underfill material)。该底层填料通常是一种环氧化物,可提高焊接接头可靠性,还提供封装结构机械/湿气稳定性。一个封装可以具有数百个接头(如,焊料求凸点),以二维阵列排列在芯片和基板封装之间的芯片表面。通常,在沿芯片和封装的界面的一侧分布未固化的底层填料的衬料,将底层填料涂覆于该界面。然后,底层填料在接点之间流动。
安装在封装基板上的芯片或管芯可以用模塑配混料覆盖模塑(overmolded),提供一定程度的对环境作用如湿气和污染物的防护。典型的覆盖模塑过程采用模压机将固体或半固体的模塑配混料放在芯片上面。然后通过加热的塑模转移封装,使得模塑配混料流动并包封芯片。
典型的底层填料以及模塑配混料是环氧基即环氧树脂。通过组合环氧化物与硬化剂形成该树脂。用于底层填料和模塑配混料的典型硬化剂是胺基体系或酚基体系。模塑配混料还可以包含涂料,如陶瓷或二氧化硅。
在可靠性性能方面,一般认为底层填料和模塑配混料有四种重要性质。这些性质包括固化后树脂低CTE、低模量、粘合性和高的断裂韧性。早已发现亚甲基二胺作为环氧化物的底层填料或模塑配混料的硬化剂具有与聚酰亚胺和基板的良好粘合性。通过添加弹性体如长链脂族硅官能化环氧化物提供该体系韧性。虽然添加了例如长链脂族硅环氧化物提高了断裂韧性,但是观察到树脂的玻璃化转变温度(Tg)随硅弹性体添加量增加而下降。还期望添加硅弹性体能提高树脂的粘度,因此减少树脂作为底层填料(underfill)组合物在芯片下面的流动。最后,使用亚甲基基芳族二胺时必须小心处理,因为这类化合物已知是致癌物质。
与底层填料组合物相关的一个问题是底层填料组合物在固化时会增加封装(如,包含芯片和封装基板的封装)的翘曲。观察到翘曲影响封装共面,尤其在球栅阵列(BGA)封装,导致应力接头的后回流(stressed joints postreflow)。应力接头导致焊接接头疲劳破坏增加。随着管芯尺寸增大,产生更大应力,特别在管芯边缘。当前,期望所有的封装能满足无铅回流焊接的要求。对要符合无铅回流条件的材料,高粘合性和低封装应力很重要。
在非中央处理器(CPU)区,封装的堆栈高度是一个重要参数。工业上的一个趋向是使封装更薄,有更多的功能。减小封装厚度意味着要形成更薄的模塑组合物/底层填料处理和更少翘曲,具有更好的可靠性。
附图简要说明
由下面的详细描述、权利要求书和附图能更完全地理解本发明的特征、方面和优点,附图中:
图1所示是连接到母板的一个封装。
图2所示是对硅氧烷基芳族二胺和酚基环氧化物的固化机理。
详细说明
描述组合物。在一个实施方式中,组合物用作芯片和封装基板之间的底层填料制剂。在另一个实施方式中,所述组合物用作芯片和封装基板上面的模塑配混料。还描述一种设备。在一个实施方式中,设备包括用放置在芯片和放置基板之间的底层填料制剂连接到封装基板上的芯片,在另一个实施方式中,模塑配混料放置在封装基板上面的芯片上。
一个实施方式中,适合作为底层填料制剂或模塑配混料的组合物是一种包含环氧化物和硬化剂的环氧基体系。一种适合于硬化剂的组合物是是硅氧烷基芳族二胺。一种合适的硅氧烷基芳族二胺具有下面通式:
通式I
通式I中,基团R1和R2独立地选自:氢(H)、烷基、取代的烷基、脂环基、烷基醚(如,甲醚,乙醚等)、芳基、和取代的芳基部分,和-OR7部分,其中R7选自脂族和芳族部分。基团R3、R4、R5、R6、R8和R9独立地选自:氢(H)、烷基、取代的烷基、脂环基、烷基醚、芳基和取代的芳基部分。
上面通式中,烷基指无环的饱和或不饱和的脂族直链或支链烃。-CH2、-CH2CH3、CH2CH2CH2CH3、-CH2CH2CH2CH2CH3是饱和直链烷基部分的例子。-CH2CH=CHCH3是烯烃或不饱和烷基部分的例子。单环脂族饱和烃部分的例子是环己烷。取代的烷基部分的例子是,例如其中的氢原子被惰性原子取代的部分,芳基可以指芳环、取代的芳环和稠合芳环。芳基部分的例子有苯基、羟基苯基和萘基。
关于底层填料制剂或模塑配混料,可以混合组合物如硅氧烷基芳族二胺与环氧化物。在电路封装过程中,优选环氧化物。环氧化物普遍用作底层填料制剂或模塑配混料的组分的原因包括环氧化物的多功能性以及调谐总制剂或配混料的性质,与各种基板的良好粘合性,低固化收缩,良好的电性质,与许多条件的相容性,以及一种环氧化物能在各种条件下固化的能力。双酚-A,双酚-F或萘-基环氧树脂是适合于底层填料制剂和/或模塑配混料的材料。
模塑配混料的一个实施方式包括但不限于,一种包含环氧化物(如,双酚-A,双酚-F,萘)、硅氧烷基芳族二胺和填料的环氧体系。合适的填料包括但不限于,陶瓷如二氧化硅、氧化铝等。
代表性的硅氧烷基芳族二胺包括但不限于下列:
其中,R3、R4、R5和R6独立地选自:H、甲基、乙基、丙基等部分;和
其中,R3、R4、R5和R6独立地选自:H、甲基、乙基、丙基等部分;R和R’独立地选自:甲基、乙基、丙基等部分。
适合用作上述硬化剂的硅氧烷基芳族二胺可以可以购得。例如,双(对氨基苯氧基)二甲基硅烷(CAS 1223-16-1)可从Gelest,Inc.of Morrisville,Pennsylvania购得。或者,合适的硅氧烷基芳族二胺一般可以按照下面过程合成:
通过使用硅氧烷基芳族二胺,期望制剂如底层填料制剂或模塑配混料具有提高了的挠性。
相信挠性提高是源自构成硅氧烷基芳族二胺的硅-氧键(-O-Si-O-)。挠性可导致降低基质的模量。认为应力与模量直接相关,因此例如预期较低的封装应力。较低的封装应力也应产生更好的材料/封装可靠性性能。而且,已知硅氧烷由于存在柔韧的-O-Si-O-键而能提供优良的断裂韧性。期望使用硅氧烷基芳族二胺硬化剂的树脂(如,环氧树脂)在固化时提供比现有技术树脂提高了的断裂韧性。还已知硅氧烷基体系具有低的表面能并是抗湿性的。因此,使用硅氧烷基芳族二胺硬化剂应降低树脂(如,作为底层填料制剂或模塑配混料的环氧树脂)的总吸湿性。此外,硅氧烷一般具有优良的热稳定性。因此,期望能提高树脂(如,作为底层填料制剂或模塑配混料的环氧树脂)的热稳定性。最后,适合用作底层填料制剂或模塑配混料的硬化剂的硅氧烷基芳族二胺可以和无铅焊剂条件相容。一个实施方式中,合适的硅氧烷基芳族二胺硬化剂用于底层填料制剂或模塑配混料与环氧化物时,可以在低于200℃固化。另一个实施方式,合适的固化温度在150-175℃范围。
图1所示是包括连接到印刷电路板(PCB)的封装的电子组件的一个实施方式。该电子组件是电子系统如计算机的部分(如,台式电脑,手提电脑,便携式,服务器,因特网应用等)、无线通讯器件(如,移动电话、无绳电话、拷机)、计算机相关的外围设备(如,打印机,扫描仪,监视器)、娱乐设备(如,电视机,收音机,立体声系统,磁带放音装置,激光唱片放音装置,录像机,MP3(Motion Picture Experts Group,Audio Layer 3 player)等。
在图1所示的实施方式中,电子组件100包括芯片或管芯110,其中和其上形成有许多电路器件,连接到封装基板120。芯片110电连接到封装基板120,在此实施方式中,是通过芯片110上相应接触盘和封装基板120之间焊料连接130(所示为焊料球)连接的。
在芯片110和封装基板120之间放置底层填料制剂135。一个实施方式中,底层填料制剂135是包含环氧化物(如,双酚-A、双酚-F、萘-基)和硅氧烷基芳族二胺硬化剂如参见化学式I所述的硅氧烷基芳族二胺的环氧基体系。一个实施方式中,环氧化物和硬化剂在一溶液中预混合,然后沿芯片110侧面或边缘分布,流到芯片110和封装基板120之间。另一个实施方式,环氧化物和硬化剂在分布时混合。关于环氧化物和硬化剂各自的量,合适量为能聚合环氧体系,使它固化时形成固体。代表性的环氧化物对硬化剂的量可多至0.75-1.25摩尔比。
图2所示为作为例如底层填料制剂或模塑配混料的硬化剂的硅氧烷基芳族二胺的代表,表明硅氧烷基芳族二胺与环氧化物的混合(如,反应产物)。在此实施例中,环氧化物是酚基环氧化物。
再参见图1,一个实施方式中,底层填料制剂135分布在芯片110和封装基板120之间。一种方法是将底层填料制剂135沿芯片110的一个侧面分布在封装基板120上,使得底层填料制剂135在芯片110下面流动。底层填料制剂135以足够量分布,填充到芯片110和封装基板120之间的所有间隙并且包围连接130。分布底层填料制剂135后,通过例如聚合反应方法该制剂固化至硬化/固化底层填料制剂135。代表性的固化温度对无铅焊料过程最高至200℃。另一个实施方式,合适的固化温度在150-175℃范围。
在图1所示的实施方式中,电子组件100包含在芯片110和封装基板120上面形成的模塑配混料140。一个实施方式中,模塑配混料140是包含环氧化物(如,双酚-A、双酚-F、萘-基)和硅氧烷基芳族二胺如参见化学式I所述的硅氧烷基芳族二胺硬化剂的环氧基体系。另一个实施方式,硬化剂选自现有技术硬化剂。在又一个实施方式中,模塑配混料140还包含填充材料如陶瓷,在一个实施方式中,陶瓷材料可以使模塑配混料140预成形为盘形或类似的结构。以这种方式,模塑配混料140可以通过模压施用到芯片110和封装基板120上,并且固化流动和包封芯片110。或者,模塑配混料140可以以溶液或半溶液形式分布在芯片110和封装基板120上,并参照上面对底层填料制剂135所述进行固化。
图1显示连接到印刷电路板(PCBB)150的封装基板120。PCB是,例如母板或其它电路板。封装基板120通过连接155如无铅焊剂连接来连接到PCB 150。PCB 150可以包含其它元件,可以通过嵌埋在PCB 150中的导电路径(trace)连接到芯片110。图1代表性地显示装置160,即,例如存储装置、电源装置或其它装置。
在前面段落中,描述了具体的实施方式。但是,很明显,在不偏离权利要求书的广义精神和范围下,可以进行各种修改和变动。因此,说明书和附图被认为是进行说明,而不构成限制。
Claims (20)
1.一种装置,它包括:
包含第一组接触点的第一基板;
包含第二组接触点的第二基板,第二组接触点通过第一组接触点的一部分和第二组接触点的一部分之间的互连(interconnection)联接到第一基板;
放置在第一基板和第二基板之间的包含硅氧烷基芳族二胺的组合物。
2.如权利要求1所述的装置,其特征在于,所述组合物包含硅氧烷基芳族二胺与环氧树脂的反应产物。
4.如权利要求3所述的装置,其特征在于,基团R1和R2包含甲基部分,基团R3、R4、R5和R6包含氢部分,基团R8和R9包含氢部分。
5.如权利要求3所述的装置,其特征在于,基团R1和R2包含甲基部分,基团R3和R5包含氢部分,基团R4和R6包含丙基部分,基团R8和R9包含氢部分。
6.如权利要求3所述的装置,其特征在于,基团R1和R2包含甲基部分,基团R3、R4、R5和R6包含甲基部分,基团R8和R9包含氢部分。
7.如权利要求3所述的装置,其特征在于,基团R1和R2包含甲基部分,基团R3、R4、R5和R6包含丙基部分,基团R8和R9包含氢部分。
8.如权利要求3所述的装置,其特征在于,基团R1和R2包含甲基部分,基团R3、R4、R5和R6独立地包含氢部分和C1-C6烷基部分中一个,基团R8和R9包含氢部分。
9.如权利要求3所述的装置,其特征在于,基团R1和R2中一个包含甲基部分,另一个包含苯基部分,基团R3、R4、R5和R6包含氢部分,基团R8和R9包含氢部分。
10如权利要求3所述的装置,其特征在于,基团R1和R2中一个包含甲基部分,另一个包含苯基部分,基团R3、R4、R5和R6独立地包含氢部分和C1-C6烷基部分中一个,基团R8和R9包含氢部分。
11.如权利要求3所述的装置,其特征在于,基团R1和R2中一个包含甲基部分,另一个包含-OR7部分,其中R7包含胺,基团R3、R4、R5和R6独立地包含氢部分和C1-C6烷基部分中一个,基团R8和R9包含氢部分。
12.如权利要求1所述的装置,其特征在于,第二基板包括集成电路。
13.如权利要求1所述的装置,其特征在于,第一基板包括封装,第二基板包括印刷电路板。
14.一种电子组件,它包括:
包含第一组接触点的第一基板;
包含第二组接触点的第二基板,第二组接触点通过第一组接触点的一部分和第二组接触点的一部分之间的互连联接到第一基板;
放置在第一基板和第二基板之间的包含硅氧烷基芳族二胺的组合物;
耦合到第一基板和第二基板中一个的电源。
15.如权利要求14所述的装置,其特征在于,第二基板包括集成电路。
16.如权利要求14所述的装置,其特征在于,第一基板包括电路封装,第二基板包括印刷电路板。
17.一种方法,包括以下步骤:
将包含硅氧烷基芳族二胺的可流动态组合物引入包含第一组接触点的第一基板和包含第二组接触点的第二基板之间,所述第二组接触点通过第一组接触点的一部分和第二组接触的一部分之间的互连联接到第一基板;
固化所述的组合物。
18.如权利要求17所述的方法,其特征在于,固化组合物的步骤包括在低于焊料回流温度的温度下进行固化。
19.如权利要求17所述的方法,其特征在于,在引入组合物之前,所述方法包括混合硅氧烷基芳族二胺与环氧化物的步骤。
20.如权利要求17所述的方法,其特征在于,所述硅氧烷基芳族二胺具有下面化学式:
通式I
式中,基团R1和R2独立地选自:氢、烷基、取代的烷基、芳基、取代的芳基部分和-OR7部分,其中R7选自脂族部分和芳族部分,
基团R3、R4、R5和R6独立地选自:氢、烷基、取代的烷基、芳基和取代的芳基部分,
基团R8和R9独立地选自:氢、脂族部分和芳族部分。
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070029653A1 (en) * | 2005-08-08 | 2007-02-08 | Lehman Stephen E Jr | Application of autonomic self healing composites to integrated circuit packaging |
DE102005062783A1 (de) * | 2005-12-28 | 2007-07-05 | Robert Bosch Gmbh | Elektronikmodul sowie Verfahren zur Herstellung eines solchen |
US7534649B2 (en) | 2006-05-12 | 2009-05-19 | Intel Corporation | Thermoset polyimides for microelectronic applications |
US20080122049A1 (en) * | 2006-11-28 | 2008-05-29 | Texas Instruments Incorporated | Leadframe finger design to ensure lead-locking for enhanced fatigue life of bonding wire in an overmolded package |
US7948090B2 (en) * | 2006-12-20 | 2011-05-24 | Intel Corporation | Capillary-flow underfill compositions, packages containing same, and systems containing same |
US9330993B2 (en) * | 2012-12-20 | 2016-05-03 | Intel Corporation | Methods of promoting adhesion between underfill and conductive bumps and structures formed thereby |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660434A (en) * | 1968-03-26 | 1972-05-02 | Nasa | Siloxane-containing epoxide compounds |
JP3751054B2 (ja) * | 1994-11-18 | 2006-03-01 | 宇部興産株式会社 | 電子部品用接着剤 |
US5700581A (en) * | 1996-06-26 | 1997-12-23 | International Business Machines Corporation | Solvent-free epoxy based adhesives for semiconductor chip attachment and process |
JPH10163386A (ja) * | 1996-12-03 | 1998-06-19 | Toshiba Corp | 半導体装置、半導体パッケージおよび実装回路装置 |
US5922167A (en) * | 1997-01-16 | 1999-07-13 | Occidential Chemical Corporation | Bending integrated circuit chips |
JP4228400B2 (ja) * | 1997-02-05 | 2009-02-25 | 日本メクトロン株式会社 | 接着剤組成物溶液 |
US6190509B1 (en) * | 1997-03-04 | 2001-02-20 | Tessera, Inc. | Methods of making anisotropic conductive elements for use in microelectronic packaging |
US5935372A (en) * | 1997-04-29 | 1999-08-10 | Occidental Chemical Corporation | Adhesive sealant for bonding metal parts to ceramics |
US6156820A (en) * | 1998-12-28 | 2000-12-05 | Occidental Chemical Corporation | Polyamideimidesiloxane hot melt adhesive |
JP3556503B2 (ja) * | 1999-01-20 | 2004-08-18 | 沖電気工業株式会社 | 樹脂封止型半導体装置の製造方法 |
US6512031B1 (en) | 1999-04-15 | 2003-01-28 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition, laminate film using the same, and semiconductor device |
US6429238B1 (en) | 1999-06-10 | 2002-08-06 | Shin-Etsu Chemical Co., Ltd. | Flip-chip type semiconductor device sealing material and flip-chip type semiconductor device |
US6444921B1 (en) * | 2000-02-03 | 2002-09-03 | Fujitsu Limited | Reduced stress and zero stress interposers for integrated-circuit chips, multichip substrates, and the like |
JP4753460B2 (ja) * | 2000-08-16 | 2011-08-24 | 株式会社クリエイティブ テクノロジー | 静電チャック及びその製造方法 |
JP2002121207A (ja) * | 2000-10-16 | 2002-04-23 | Kanegafuchi Chem Ind Co Ltd | 組成物とそれを用いた感光性組成物及びカバーレイ |
JP2002194053A (ja) | 2000-12-22 | 2002-07-10 | Shin Etsu Chem Co Ltd | 半導体スクリーン印刷封止用液状エポキシ樹脂組成物 |
US6518096B2 (en) * | 2001-01-08 | 2003-02-11 | Fujitsu Limited | Interconnect assembly and Z-connection method for fine pitch substrates |
US6573592B2 (en) * | 2001-08-21 | 2003-06-03 | Micron Technology, Inc. | Semiconductor die packages with standard ball grid array footprint and method for assembling the same |
JP3723483B2 (ja) | 2001-10-16 | 2005-12-07 | 日本電気株式会社 | 電子部品装置 |
-
2003
- 2003-06-30 US US10/611,618 patent/US7084492B2/en not_active Expired - Fee Related
-
2004
- 2004-06-16 EP EP04755497A patent/EP1647052B1/en not_active Expired - Lifetime
- 2004-06-16 CN CNB2004800183219A patent/CN100464398C/zh not_active Expired - Fee Related
- 2004-06-16 WO PCT/US2004/019371 patent/WO2005006428A1/en active Application Filing
- 2004-06-16 DE DE602004026589T patent/DE602004026589D1/de not_active Expired - Lifetime
- 2004-06-16 AT AT04755497T patent/ATE464653T1/de not_active IP Right Cessation
- 2004-06-18 TW TW093117799A patent/TWI246129B/zh not_active IP Right Cessation
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2005
- 2005-10-24 US US11/259,994 patent/US7294915B2/en not_active Expired - Fee Related
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2006
- 2006-04-24 HK HK06104866.7A patent/HK1082596A1/xx not_active IP Right Cessation
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Also Published As
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HK1082596A1 (en) | 2006-06-09 |
US7479449B2 (en) | 2009-01-20 |
TWI246129B (en) | 2005-12-21 |
DE602004026589D1 (de) | 2010-05-27 |
ATE464653T1 (de) | 2010-04-15 |
TW200501284A (en) | 2005-01-01 |
US20080009130A1 (en) | 2008-01-10 |
US7294915B2 (en) | 2007-11-13 |
US7084492B2 (en) | 2006-08-01 |
WO2005006428A1 (en) | 2005-01-20 |
EP1647052B1 (en) | 2010-04-14 |
EP1647052A1 (en) | 2006-04-19 |
US20060043614A1 (en) | 2006-03-02 |
CN100464398C (zh) | 2009-02-25 |
US20040262750A1 (en) | 2004-12-30 |
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